STB76NF80 2 N-channel 80 V, 0.0095 Ω, 80 A D PAK STripFET™ II Power MOSFET Features R Type V DS(on) I DSS max D STB76NF80 80 V < 0.011 Ω 80 A(1) 1. Current limited by package 3 1 ■ Exceptional dv/dt capability D²PAK ■ 100% avalanche tested Application ■ Switching applications – Automotive Description Figure 1. Internal schematic diagram This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” (cid:36)(cid:0)(cid:8)(cid:52)(cid:33)(cid:34)(cid:0)(cid:79)(cid:82)(cid:0)(cid:18)(cid:9) strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. (cid:39)(cid:8)(cid:17)(cid:9) (cid:51)(cid:8)(cid:19)(cid:9) (cid:33)(cid:45)(cid:16)(cid:17)(cid:20)(cid:23)(cid:20)(cid:86)(cid:17) Table 1. Device summary Order codes Marking Package Packaging STB76NF80 B76NF80 D²PAK Tape and reel March 2010 Doc ID 17290 Rev 1 1/13 www.st.com 13

Contents STB76NF80 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 Doc ID 17290 Rev 1

STB76NF80 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 80 V DS GS V Gate-source voltage ± 20 V GS I (1) Drain current (continuous) at T = 25 °C 80 A D C I (1) Drain current (continuous) at T =100 °C 70 A D C I (2) Drain current (pulsed) 320 A DM P Total dissipation at T = 25 °C 300 W TOT C Derating factor 2.0 W/°C dv/dt (3) Peak diode recovery voltage slope 12 V/ns E (4) Single pulse avalanche energy 700 mJ AS TJ Operating junction temperature -55 to 175 °C T Storage temperature stg 1. Current limited by package 2. Pulse width limited by safe operating area 3. I ≤ 80 A, di/dt ≤ 300 A/µs, V ≤ V , T ≤ T SD DD (BR)DSS j JMAX 4. Starting T = 25 °C, I = 40 A, V = 37.5 V J D DD Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 0.5 °C/W thJC R Thermal resistance junction-ambient max 62.5 °C/W thJA Maximum lead temperature for soldering T 300 °C l purpose (1) 1. 1.6mm from case for 10 sec Doc ID 17290 Rev 1 3/13

Electrical characteristics STB76NF80 2 Electrical characteristics (T =25 °C unless otherwise specified) CASE Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown V I = 250 µA, V = 0 80 V (BR)DSS voltage D GS I Zero gate voltage drain VDS = Max rating, 1 µA DSS current (VGS = 0) VDS = Max rating @125 °C 10 µA Gate body leakage current I V = ± 20 V ±100 nA GSS (V = 0) GS DS V Gate threshold voltage V = V , I = 250 µA 2 3 4 V GS(th) DS GS D Static drain-source on R V = 10 V, I = 40 A 0.0095 0.011 Ω DS(on) resistance GS D Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit g (1) Forward transconductance V = 15 V, I = 40 A - 20 S fs DS D Input capacitance C 3700 pF iss Output capacitance V =25 V, f = 1 MHz, C DS - 730 pF oss Reverse transfer VGS = 0 C 240 pF rss capacitance Qg Total gate charge V = 60 V, I = 80 A 117 160 nC Q Gate-source charge DD D - 27 nC gs V =10 V Q Gate-drain charge GS 47 nC gd 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% 4/13 Doc ID 17290 Rev 1

STB76NF80 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t Turn-on delay time 25 ns d(on) V = 37.5 V, I = 45 A, t Rise time DD D 100 ns r R =4.7 Ω, V =10 V - - t Turn-off delay time G GS 66 ns d(off) Figure14 on page8 t Fall time 30 ns f Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I Source-drain current - 80 A SD I (1) Source-drain current (pulsed) - 320 A SDM V (2) Forward on voltage I = 80 A, V = 0 - 1.5 V SD SD GS I = 80 A, t Reverse recovery time SD 132 ns rr di/dt = 100 A/µs, Q Reverse recovery charge - 660 nC rr V = 25 V, T = 150 °C I Reverse recovery current DD J 10 A RRM Figure16 on page8 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 17290 Rev 1 5/13

Electrical characteristics STB76NF80 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 Doc ID 17290 Rev 1

STB76NF80 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs vs temperature temperature Figure 12. Source-drain diode forward Figure 13. Normalized B vs temperature VDSS characteristics Doc ID 17290 Rev 1 7/13

Test circuits STB76NF80 3 Test circuits Figure 14. Switching times test circuit for Figure 15. Gate charge test circuit resistive load VDD 12V 47kΩ 1kΩ 100nF RL 2µ20F0 3µ.F3 VDD IG=CONST VD Vi=20V=VGMAX 100Ω D.U.T. VGS 2200 RG D.U.T. µF 2.7kΩ VG PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit L A A A D FAST L=100µH VD G D.U.T. DIODE 2200 3.3 µF µF VDD S B 3.3 1000 B B µF µF 25Ω D VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 18. Unclamped inductive waveform V(BR)DSS VD IDM ID VDD VDD AM01472v1 8/13 Doc ID 17290 Rev 1

STB76NF80 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 17290 Rev 1 9/13

Package mechanical data STB76NF80 D2PAK (TO-263) mechanical data mm inch Dim Min Typ Max Min Typ Max A 4.40 4.60 0.173 0.181 A1 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 7.50 0.295 E 10 10.40 0.394 0.409 E1 8.50 0.334 e 2.54 0.1 e1 4.88 5.28 0.192 0.208 H 15 15.85 0.590 0.624 J1 2.49 2.69 0.099 0.106 L 2.29 2.79 0.090 0.110 L1 1.27 1.40 0.05 0.055 L2 1.30 1.75 0.051 0.069 R 0.4 0.016 V2 0° 8° 0° 8° 0079457_M 10/13 Doc ID 17290 Rev 1

STB76NF80 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197 BASE QTY BULK QTY TAPE MECHANICAL DATA 1000 1000 mm inch DIM. MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.00980.0137 W 23.7 24.3 0.933 0.956 * on sales type Doc ID 17290 Rev 1 11/13

Revision history STB76NF80 6 Revision history T able 8. Document revision history Date Revision Changes 24-Mar-2010 1 Initial release 12/13 Doc ID 17290 Rev 1

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