New Product SiB415DK Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free VDS (V) RDS(on) (Ω) ID (A)a, f Qg (Typ.) (cid:129) TrenchFET® Power MOSFET - 30 0.087 at VGS = - 10 V - 9 3.5 nC (cid:129) New Thermally Enhanced PowerPAK® RoHS 0.158 at VGS = - 4.5 V - 7.2 SC-75 Package COMPLIANT - Small Footprint Area APPLICATIONS PowerPAK SC-75-6L-Single (cid:129) Load Switch, PA Switch and Battery Switch for Portable Devices S 1 D 2 Marking Code D G 3 B D X G Part # code D X X X 6 Lot Traceability D S 5 and Date code 1.60 mm S 1.60 mm 4 D Ordering Information: SiB415DK-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V ± 20 GS TC = 25 °C - 9a Continuous Drain Current (T = 150 °C) TC = 70 °C I - 7.7 J TA = 25 °C D - 4.17a, b TA = 70 °C - 3.36a, b A Pulsed Drain Current IDM 15 Continuous Source-Drain Diode Current TTCA == 2255 °°CC IS - -2 9a,a b TC = 25 °C 13 Maximum Power Dissipation TTCA == 2750 °°CC PD 2.84.a4, b W TA = 70 °C 1.6a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, e t ≤ 5 s RthJA 41 51 °C/W Maximum Junction-to-Case (Drain) Steady State R 7.5 9.5 thJC Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Maximum under Steady State conditions is 105 °C/W. f. Based on T = 25 °C. C Document Number: 70438 www.vishay.com S-80515-Rev. C, 10-Mar-08 1

New Product SiB415DK Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS Temperature Coefficient ΔVDS/TJ - 24.2 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 30 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = - 10 V 5 A VGS = - 10 V, ID = - 4.17 A 0.072 0.087 Drain-Source On-State Resistancea RDS(on) Ω VGS = - 4.5 V, ID = - 3.1 A 0.130 0.158 Forward Transconductancea gfs VDS = - 15 V, ID = - 4.17 A 5.5 S Dynamicb Input Capacitance Ciss 295 Output Capacitance Coss VDS = - 15 V, VGS = 0 V, f = 1 MHz 70 pF Reverse Transfer Capacitance Crss 50 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 4.17 A 6.7 10.05 3.5 5.25 nC Gate-Source Charge Qgs VDS = - 15 V, VGS = - 4.5 V, ID = - 4.17 A 1 Gate-Drain Charge Qgd 1.78 Gate Resistance Rg f = 1 MHz 9.4 Ω Turn-On Delay Time td(on) 43 64.5 Rise Time tr VDD = - 15 V, RL = 6.07 Ω 55 82 Turn-Off Delay Time td(off) ID ≅ - 2.47 A, VGEN = - 4.5 V, Rg = 1 Ω 13 19.5 Fall Time tf 10 15 ns Turn-On Delay Time td(on) 6 9 Rise Time tr VDD = - 15 V, RL = 3.6 Ω 8.5 12.75 Turn-Off Delay Time td(off) ID ≅ - 4.17 A, VGEN = - 10 V, Rg = 1 Ω 14 21 Fall Time tf 9 13.5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 9 A Pulse Diode Forward Current ISM 15 Body Diode Voltage VSD IS = - 3.2 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 14.63 22 ns Body Diode Reverse Recovery Charge Qrr 8 12 nC I = - 3.2 A, di/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 9.13 ns Reverse Recovery Rise Time tb 5.5 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70438 2 S-80515-Rev. C, 10-Mar-08

New Product SiB415DK Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 15 5 VGS = 10 thru 6 V VGS = 5 V 12 4 A) A) Drain Current ( 69 VGS = 4 V Drain Current ( 23 - ID - ID TJ = 25 °C 3 1 TJ = 125 °C VGS = 3 V TJ = - 55 °C 0 0 0 1 2 3 4 5 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.5 500 Ω) 0.4 400 e ( c esistan 0.3 ce (pF) 300 Ciss R n On- VGS = 4.5 V cita S pa - D to 0.2 C - Ca 200 on) Coss DS( 0.1 VGS = 10 V 100 R Crss 0 0.0 0 6 12 18 24 30 0 3 6 9 12 15 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.8 VGS= 10 V, ID = 4.17 A e (V) 8 VDS= 15 V 1.5 Gate-to-Source Voltag 46 VDS= 24 V - On-ResistanceS(on)(Normalized) 01..92 VGS= 4.5 V, ID = 3.1 A - GS 2 RD 0.6 V 0 0.3 0 1 2 3 4 5 6 7 8 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge Document Number: 70438 www.vishay.com S-80515-Rev. C, 10-Mar-08 3

New Product SiB415DK Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 10 0.30 ID = 4.17 A Ω) 0.24 nt (A) 1 TJ = 150 °C ance ( ource Curre 0.1 TJ = 25 °C - On-Resist 00..1128 TA = 125 °C - SS S(on) I 0.01 RD 0.06 TA = 25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.2 20 2.0 15 ID = 250 µA V) 1.8 W) (S(th) wer ( 10 VG 1.6 Po 5 1.4 1.2 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 10 1 ms A) 10 ms urrent ( 1 100 ms C n 1 s Drai 0.1 10 s - D DC I 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 70438 4 S-80515-Rev. C, 10-Mar-08

New Product SiB415DK Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 12 16 9 12 A) nt ( W) Curre 6 wer ( 8 ain Po Dr - D I 3 4 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 70438 www.vishay.com S-80515-Rev. C, 10-Mar-08 5

New Product SiB415DK Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 Duty Cycle = 0.5 nt e Transiance 0.2 ctive mped 0.1 Notes: ed Effeermal I 0.1 0.05 PDM alizTh 0.02 t1 Norm 1. Duty Cycle,t 2D = tt12 Single Pulse 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 nt e ctive T ransimpedance 0.2 ed Ef feermal I 0.1 zh aliT 0.05 m or 0.02 N Single Pulse 0.1 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70438. www.vishay.com Document Number: 70438 6 S-80515-Rev. C, 10-Mar-08

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