New Product SiA450DJ Vishay Siliconix N-Channel 240-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free V (V) R (Ω) I (A) Q (Typ.) DS DS(on) D g (cid:129) TrenchFET® Power MOSFET 2.9 at VGS = 10 V 1.52 (cid:129) New Thermally Enhanced PowerPAK® RoHS 240 2.95 at VGS = 4.5 V 1.5 2.54 nC SC-70 Package COMPLIANT 3.5 at VGS = 2.5 V 1.44 - Small Footprint Area - Low On-Resistance APPLICATIONS PowerPAK SC-70-6L-Single (cid:129) Boost Converter for Portable Devices D 1 D Marking Code 2 D A D X 3 Part # code D G X X X G 6 Lot Traceability D S and Date code 5 2.05 mm S 2.05 mm 4 S Ordering Information: SiA450DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage VDS 240 V Gate-Source Voltage VGS ± 20 TC = 25 °C 1.52 Continuous Drain Current (T = 150 °C) TC = 70 °C I 1.21 J TA = 25 °C D 0.70a, b TA = 70 °C 0.56a, b A Pulsed Drain Current IDM 1.5 Continuous Source-Drain Diode Current TTCA == 2255 °°CC IS 2.1724.a8, b TC = 25 °C 15 Maximum Power Dissipation TTCA == 2750 °°CC PD 3.93.a8, b W TA = 70 °C 2.1a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)c, d 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, e t ≤ 5 s RthJA 30 38 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 6.5 8.1 Notes: a.Surface Mounted on 1" x 1" FR4 board. b.t = 5 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e.Maximum under Steady State conditions is 80 °C/W. Document Number: 73603 www.vishay.com S-80436-Rev. C, 03-Mar-08 1

New Product SiA450DJ Vishay Siliconix SPECIFICATIONS T = 25 °C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA 240 V VDS Temperature Coefficient ΔVDS/TJ 247.4 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 4.22 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA 0.8 2.4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 240 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = 240 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ 10 V, VGS = 10 V 1.5 A VGS = 10 V, ID = 0.70 A 2.4 2.9 Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 0.65 A 2.46 2.95 Ω VGS = 2.5 V, ID = 0.50 A 2.85 3.5 Forward Transconductancea gfs VDS = 120 V, ID = 0.70 A 3.14 S Dynamicb Input Capacitance Ciss 167 Output Capacitance Coss VDS = 120 V, VGS = 0 V, f = 1 MHz 10 pF Reverse Transfer Capacitance Crss 3.4 Total Gate Charge Qg VDS = 120 V, VGS = 10 V, ID = 0.70 A 4.69 7.035 2.54 3.81 nC Gate-Source Charge Qgs VDS = 120 V, VGS = 4.5 V, ID = 0.70 A 0.58 Gate-Drain Charge Qgd 1.14 Gate Resistance Rg f = 1 MHz 2 Ω Turn-On Delay Time td(on) 13.7 21 Rise Time tr VDD = 120 V, RL = 200 Ω 22 33 Turn-Off Delay Time td(off) ID ≅ 0.60 A, VGEN = 4.5 V, Rg = 1 Ω 23 35 Fall Time tf 19 29 ns Turn-On Delay Time td(on) 4.5 6.75 Rise Time tr VDD = 120 V, RL = 184 Ω 11 16.5 Turn-Off Delay Time td(off) ID ≅ 0.70 A, VGEN = 10 V, Rg = 1 Ω 12 18 Fall Time tf 15 22.5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 2.7 A Pulse Diode Forward Current ISM 12.8 Body Diode Voltage VSD IS = 0.5 A, VGS = 0 V 0.8 1.2 V Body Diode Reverse Recovery Time trr 50.2 75.3 ns Body Diode Reverse Recovery Charge Qrr 68 102 nC I = 0.5 A, di/dt = 100 A/µs, T = 25 °C F J Reverse Recovery Fall Time ta 25 ns Reverse Recovery Rise Time tb 25.2 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73603 2 S-80436-Rev. C, 03-Mar-08

New Product SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1.5 1.5 VGS = 10 thru 3 V 1.2 1.2 A) A) Drain Current ( 00..69 Drain Current ( 00..69 TJ = 25 °C - - ID ID TJ = 125 °C VGS = 2 V 0.3 VGS = 1 V 0.3 TJ = - 55 °C 0.0 0.0 0 2 4 6 8 0.0 0.6 1.2 1.8 2.4 3.0 3.6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 250 VGS = 2.5 V 200 Ωsistance () 4 VGS = 4.5 V nce (pF) 150 Ciss e a n-R 3 acit - O VGS = 10 V Cap 100 S(on) C - RD 2 50 Crss Coss 0 1 0 50 100 150 200 250 0.0 0.5 1.0 1.5 2.0 2.5 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 2.5 ID = 0.73 A e (V) 8 VDS= 120 V 2.0 VVGGSS== 140.5 V V, ,I DID = = 0 0.7.605 A A Source Voltag 6 VDS= 150 V n-Resistancemalized) 1.5 VGS= 2.5 V, ate-to- 4 - Oon)(Nor 1.0 ID = 0.50 A G S( - S RD G 2 0.5 V 0 0.0 0 1 2 3 4 5 6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 73603 www.vishay.com S-80436-Rev. C, 03-Mar-08 3

New Product SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 10 8 ID = 0.70 A ent (A) 1 TJ = 150 °C Ωstance () 6 TA = 125 °C e Curr 0.1 TJ = 25 °C n-Resi 4 Sourc - On) TA = 25 °C - IS 0.01 RDS(o 2 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 2.1 30 ID = 250 µA 1.8 25 20 V) 1.5 W) V (GS(th) 1.2 Power ( 15 10 0.9 5 0.6 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 Limited by RDS(on)* 1 A) nt ( 10 ms e Curr 0.1 100 ms n ai Dr 1 s - D 10 s I 0.01 DC TA = 25 °C Single Pulse 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on)isspecified Safe Operating Area, Junction-to-Ambient www.vishay.com Document Number: 73603 4 S-80436-Rev. C, 03-Mar-08

New Product SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 2.0 20 16 1.5 A) ent ( W) 12 Curr 1.0 er ( n w Drai Po 8 - D I 0.5 4 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation P is based on T = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper D J(max) dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73603 www.vishay.com S-80436-Rev. C, 03-Mar-08 5

New Product SiA450DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 1 nt Duty Cycle = 0.5 e e Transiedance 0.2 ctivmp Notes: ed Effeermal I 0.1 0.1 PDM zh maliT 0.05 t1 Nor 0.02 1. Duty Cyclet,2 D = tt12 2. Per Unit Base = RthJA = 65 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 nt Duty Cycle = 0.5 e e Transiedance ed Effectivermal Imp 0.2 alizTh 0.1 m or N 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73603. www.vishay.com Document Number: 73603 6 S-80436-Rev. C, 03-Mar-08

Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROV E RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose o r the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk . Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this documen t or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000