Thyristors EV Series 0.8 Amp Sensitive SCRs SxX8xSx EV Series RoHS Description This new component series offers high static dv/dt and low turn off time (tq) sensitive SCR with its small die planar construction design. It is specifically designed for GFCI (Ground Fault Circuit Interrupter) and Gas Ignition applications. All SCRs junctions are glass-passivated to ensure long term reliability and parametric stability. Features • RoHS compliant and • High dv/dt noise immunity Halogen-Free • Improved turn-off time (t ) q • Thru-hole and surface < 25 μsec mount packages • Sensitive gate for direct Main Features • Surge current microprocessor interface capability > 10Amps Symbol Value Unit • Blocking voltage I 0.8 A ( V / V ) T(RMS) DRM RRM V /V 400, 600, or 800 V capability - up to 800V DRM RRM I 5 to 200 μA GT Schematic Symbol A Applications The SxX8xSx EV series is specifically designed for GFCI (Ground Fault Circuit Interrupter) and gas ignition applications. G K Absolute Maximum Ratings Symbol Parameter Value Unit TO-92 T = 55°C 0.8 A C I RMS on-state current (full sine wave) SOT-89 T = 60°C 0.8 A T(RMS) C SOT-223 T = 60°C 0.8 A L TO-92 T = 55°C 0.51 A C I Average on-state current SOT-89 T = 60°C 0.51 A T(AV) C SOT-223 T = 60°C 0.51 A L Non repetitive surge peak on-state current TO-92 F= 50Hz 8 A I SOT-89 TSM (Single cycle, TJ initial = 25°C) SOT-223 F= 60Hz 10 A t = 10 ms F = 50 Hz 0.32 A2s I2t I2t Value for fusing p t = 8.3 ms F = 60 Hz 0.41 A2s p TO-92 di/dt Critical rate of rise of on-state current I = 10mA SOT-89 T = 125°C 50 A/µs G J SOT-223 I Peak Gate Current t = 10 μs T = 125°C 1.0 A GM p J P Average gate power dissipation — T = 125°C 0.1 W G(AV) J T Storage junction temperature range — — -40 to 150 °C stg T Operating junction temperature range — — -40 to 125 °C J © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs Electrical Characteristics (T = 25°C, unless otherwise specified) J Value Symbol Description Test Conditions Limit Unit SxX8yS1 SxX8yS2 SxX8yS V = 6V MIN. 0.5 1 15 μA I DC Gate Trigger Current D GT RL = 100 Ω MAX. 5 50 200 μA V = 6V V DC Gate Trigger Voltage D MAX. 0.8 V GT R = 100 Ω L V Peak Reverse Gate Voltage I = 10μA MIN. 5 V GRM RG R = 1 KΩ I Holding Current GK MAX. 5 mA H Initial Current = 20mA T = 125°C J Critical Rate-of-Rise of V = V /V (dv/dt)s D DRM RRM MIN. 75 V/μs Off-State Voltage Exp. Waveform R =1 kΩ GK V = V D DRM V Gate Non-Trigger Voltage R =1 kΩ MIN. 0.2 V GD GK T = 125°C J T = 25°C @ 600 V t Turn-Off Time J MAX. 30 25 25 μs q R =1 kΩ GK I=10mA G t Turn-On Time PW = 15μsec TYP. 2.0 2.0 2.0 μs gt I = 1.6A(pk) T Note: x = voltage/100, y = package Static Characteristics (T = 25°C, unless otherwise specified) J Symbol Description Test Conditions Limit Value Unit V Peak On-State Voltage I = 1.6A (pk) MAX. 1.70 V TM TM T = 25°C @ V = V J D DRM MAX. 3 μA R =1 kΩ I Off-State Current, Peak Repetitive GK DRM T = 125°C @ VD = V J DRM MAX. 500 μA R =1 kΩ GK Thermal Resistances Symbol Description Test Conditions Value Unit TO-92 75 °C/W R Junction to case (AC) I = 0.8A 1 SOT-223 30 °C/W ƟJC T (RMS) SOT-89 50 °C/W TO-92 150 °C/W R Junction to ambient I = 0.8A 1 SOT-223 60 °C/W ƟJC T (RMS) SOT-89 90 °C/W 1 60Hz AC resistive load condition, 100% conduction. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs Figure 1: Normalized DC Gate Trigger Current For All Figure 2: Normalized DC Holding Current Quadrants vs. Junction Temperature vs. Junction Temperature 2.0 4.0 C) 1.5 3.0 25° C) IGTatio ofI (T = GT J 1.0 IHo ofI (T = 25°HJ 2.0 R 0.5 ati 1.0 R 0.0 0.0 -40 -15 +25 +65 +105 +125 -55 -35 -15 +5 +25 +45 +65 +85 +105 +125 Junction Temperature (T) - °C Junction Temperature (T) - °C J J Figure 3: Normalized DC Gate Trigger Voltage Figure 4: On-State Current vs. On-State vs. Junction Temperature Voltage (Typical) 1.0 ps10 m 0.9 A Trigger Voltage (V) - VGT 0000....5678 ous On-state Current (IT) – 468 SxX8xSSxX8xS1 SxX8xS2 Gate 0.4 ntane 2 0.3 sta n I 0.2 0 -40 -25 -10 +5 +20 +35 +50 +65 +80 +95 +110 +125 0.9 1.3 1.7 2.1 2.5 2.9 3.3 3.7 Junction Temperature (T) - °C Instantaneous On-state Voltage (VT) –Volts J Figure 5: Power Dissipation (Typical) Figure 6: Maximum Allowable Case Temperature vs. RMS On-State Current vs. On-State Current 0.8 130 CURRENT WAVEFORM: Sinusoidal ssipation 00..67 CLCOUOARNDRD:EU RNCeTTs WiIsOtANivV eAE NoFOrG IRLnMEd:u :1 cS8tii0nvouesoidal mperature 112100 LCCshOOAoASNwDEDn :TU REoCeMnTs PidIsOEitmNiRveA eAnT NosUriGo RILnnEEda: :luM 1dc8etria0avwoseuinregds as On-state Power Di] - Watts[PD(AV)000...345 Allowable Case Teo(T) - CC1089000 TO-92 SOT-223 & SOT-89 e 0.2 m 70 verag 0.1 ximu 60 A a M 0.0 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RMS On-state Current [I ] - Amps RMS On-state Current [I ] - Amps T(RMS) T(RMS) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs Figure 7-1: Typical DC Gate Trigger Current with R vs. Figure 7-2: Typical DC Gate Trigger Current with R vs. GK GK Junction Temperature for S6X8BS Junction Temperature for S8X8ESRP mA) mA) Trigger Current I (GT Trigger Current I (GT Figure 8-1: Typical DC Holding Current with RGK vs. Figure 7-2: Typical DC Holding Current with R vs. GK Junction Temperature for S6X8BS Junction Temperature for S8X8ESRP A) mA) m nt I (H ent I (H urre Curr g C ng oldin Holdi H Figure 9-1: Typical DC Static dv/dt with R vs. Figure 9-2: Typical DC Static dv/dt with R vs. GK GK Junction Temperature for S6X8BS Junction Temperature for S8X8ESRP © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs Figure 10-1: Typical DC turn off time with R vs. Figure 10-2: Typical DC turn off time with R vs. GK GK Junction Temperature for S6X8BS Junction Temperature for S8X8ESRP Figure 11: Surge Peak On-State Current vs. Number of Cycles 20 Supply Frequency: 60Hz Sinusoidal e Load: Resistive ve) On-Statmps.17890 SNRpMoeteScs ifiO:cn C-Satsaete T eCmurpreernatt u[IrTe(RMS)]: Max Rated Value at eak Surge (Non-repetitiCurrent (I) – ATSM 35624 0.8 A Components 1f2toe.. lmGlOoapwvteeeirnr alcgoto ausndruet rrm oghleaa my sc nuareoyrrt tueb brnenet e l oirndest ptet oedr vausatrtelie.ndag du aynn-tsditl ajiumtenm crtaeitodenida tvealylue. P 1 1 2 3 4 5 678910 20 30 40 60 80100 200 300400600 1000 Surge Current Duration - Full Cycle © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs Soldering Parameters Reflow Condition Pb – Free assembly t - Temperature Min (Ts(min)) 150°C TP P Pre Heat - Temperature Max (T ) 200°C s(max) RRaammpp--uupp e Average ramp- u Tpim raet e(m (Liniq tuoi dmuasx T)e m(tsp)) (TL) to peak 650°C –/ s1e8c0o nsde cmsax rutare TS(mTaxL) tL TS(max) to TL - Ramp-up Rate 5°C/second max pm PPrreehheeaatt RRaammpp--ddoown - Temperature (T) (Liquidus) 217°C eT Reflow L TS(min) - Time (min to max) (ts) 60 – 150 seconds tS Peak Temperature (T) 260+0/-5 °C P Time within 5°C of actual peak Temperature (t) 20 – 40 seconds 25 p time to peak temperature Ramp-down Rate 5°C/second max Time Time 25°C to peak Temperature (T) 8 minutes Max. P Do not exceed 280°C Additional Information Datasheet Resources Samples Physical Specifications Reliability/Environmental Tests Terminal Finish 100% Matte Tin-plated. Test Specifications and Conditions Body Material UraLti nRge Vco-0gnized compound meeting flammability AC Blocking MACIL v-SoTltDag-7e5 @0, 1M10-°1C04 f0o,r C10o0n8d hAo Auprsplied Peak Lead Material Copper Alloy MIL-STD-750, M-1051, Temperature Cycling 100 cycles; -40°C to +150°C; 15-min dwell- time EIA / JEDEC, JESD22-A101 Temperature/Humidity 1008 hours; 320V - DC: 85°C; 85% rel humidity MIL-STD-750, M-1031, High Temp Storage Design Considerations 1008 hours; 150°C Low-Temp Storage 1008 hours; -40°C Careful selection of the correct component for the application’s operating parameters and environment will Resistance to MIL-STD-750 Method 2031 go a long way toward extending the operating life of the Solder Heat Thyristor. Good design practice should limit the maximum Solderability ANSI/J-STD-002, category 3, Test A continuous current through the main terminals to 75% of Lead Bend MIL-STD-750, M-2036 Cond E the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs Dimensions – TO-92 Inches Millimeters Dimension A Min Max Min Max TC MEASURING POINT A 0.175 0.205 4.450 5.200 B B 0.170 0.210 4.320 5.330 C 0.500 12.70 D 0.135 3.430 SEATING PLANE E 0.125 0.165 3.180 4.190 C F 0.080 0.105 2.040 2.660 GATE G 0.016 0.021 0.407 0.533 H 0.045 0.055 1.150 1.390 I 0.095 0.105 2.420 2.660 G ANODE J 0.015 0.020 0.380 0.500Anode H CATHODE I D E J F Anode F Gate Cathode Anode Dimensions – SOT-223 Anode Gate Anode Cathode Anode Gate Cathode Anode Inches Millimeters Dimensions Min Typ Max Min Typ Max A 0.248 0.256 0.264 6.30 6.50 6.70 Gate Cathode B 0.130 0.138 0.146 3.30 3.50 3.70 Anode C — — 0.071 — — 1.80 3.3 (0.130”) D 0.001 — 0.004 0.02 — 0.10 E 0.114 0.118 0.124 2.90 3.00 3.15 1.5 (0.059”) F 0.024 0.027 0.034 0.60 0.70 0.85 (0.01.427”) (0.029.31”) (0.62.542”) G — 0.090 — — 2.30 — (3x) H — 0.181 — — 4.60 — (0.01.559”) I 0.264 0.276 0.287 6.70 7.00 7.30 4.6 J 0.009 0.010 0.014 0.24 0.26 0.35 (0.181”) K 10° MAX Dimensions in Millimeters (Inches) Recommended Soldering Footprint for SOT223 © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

A Tc Measuring Point Anode J Thyristors EV Series 0.8 Amp Sensitive SCRs A Tc Measuring Point J BAnode D E B D F Cathode Gate Dimensions – SOT-89 G Anode A Tc Measuring PEoint J Anode A Tc Measuring Point C Anode F Cathode J Gate H G B Anode D B D C E H F Cathode E Gate G Anode c F Cathode Inches Millimeters Gate Dimension G C Anode H Min Typ Max Min Tgyp Max A 0.173 — 0.181 4.40 — 4.60 C Pad Layout for SOT-89 H B 0.090 — c 0.102 2.29 — 2.60 (2.0.2817) a C 0.055 — 0.063 1.40 —f 1.60 d g (1.12) .044 D 0.155 — 0.167 3.94 — 4.25 c e E 0.035 — 0.047 0.89 — 1.20 (3.1.5941) g a F 0.056 f — d0.062 1.42 — 1.57 (.10.1497) c b G 0.115 — 0.121 2.92 — 3.07 (.00.3961) g f d a H e0.014 — 0.017 0.35 — 0.44 (1.63) (1.63) .064 .064 Dimensions in Millimeters (Inches) I 0.014 — 0.019 0.36 — 0.48 ae b f d J 0.064 — 0.072 1.62 — 1.83 b e b © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs Product Selector Voltage Part Numbr Gate Sensitivity Package 400V 600V 800V SxX8BS X X - 200 µA SOT-89 SxX8ES X X X 200 µA TO-92 SxX8TS X X X 200 µA SOT-223 SxX8BS1 X X - 5 µA SOT-89 SxX8ES1 X X X 5 µA TO-92 SxX8TS1 X X X 5 µA SOT-223 SxX8BS2 X X - 50 µA SOT-89 SxX8ES2 X X X 50 µA TO-92 SxX8TS2 X X X 50 µA SOT-223 Packing Options Part Number Marking Weight Packing Mode Base Quantity SxX8ESy SxX8ESy 0.217g Bulk 2500 SxX8ESyAP SxX8ESy 0.217g Ammo Pack 2000 SxX8ESyRP SxX8ESy 0.217g Tape & Reel 2000 SxX8TSyRP SxX8TSy 0.120g Tape & Reel 1000 SxX8BSyRP xX8y 0.053g Tape & Reel 1000 SxX8BSyRP1 xX8y 0.053g Tape & Reel 1000 Note: x = voltage/100, y = gate sensitivity © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EIA-468-C Standards 0.236 0.02 (0.5) 0.098 (2.5) MAX 1.6 (6.0) 1.26 (41.0) (32.0) 0.708 (18.0) 0.354 (9.0) (102.5.7) 0.1 (2.54) Cathode Anode 0.2 (5.08) Gate 14.17(360.0) 0 (.41.507)DIA Flat up 1.97 (50.0) Dimensions are in inches Direction of Feed (and millimeters). TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications Meets all EIA-468-C Standards 0.236 0.02 (0.5) (6.0) 0.098 (2.5) MAX 1.27 1.62 (32.2) (41.2) 0.708 (18.0) 0.354 (9.0) (102.5.7) 0.1 (2.54) 0.2 (5.0A8n)odeGateCathode 0(4.1.05)7DIA Flat down Directionof Feed 25 Components per fold 1.85 (47.0) 12.2 (310.0) Dimensions are in inches 1.85 (and millimeters). (47.0) 13.3 (338.0) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs SOT-89 Reel Pack (RP) Specifications Ø1.5 mm 4 mm 8 mm 2 mm ANODE 1.75 mm 5.5 mm 12 mm GATE ANODE CATHODE 180 mm 13 mm Abor Hole Diameter 13.4 mm DIRECTION OF FEED SOT-89 Reel Pack (RP1) Specifications Ф 1.5mm 4mm 8mm 2mm CATHODE ANODE 1.75mm 5.5mm 12mm ANODE GATE 180 mm 13 mm Abor Hole Diameter 13.4 mm DIRECTION OF FEED © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19

Thyristors EV Series 0.8 Amp Sensitive SCRs SOT-223 Reel Pack (RP) Specifications ∅1.5 mm 4 mm 8 mm 2 mm A 1.75 mm 5.5 mm 12 mm K A GATE 180 mm 13 mm Abor Hole Diameter 13.4 mm Part Numbering System Part Marking System SxX8xxxxx PACKING TYPE SERIES Blank: Bulk Pack S: SCR RP: Reel Pack (TO-92) Embossed Carrier Pack (SOT-223) VOLTAGE Embossed Carrier Pack (SOT-89) 4: 400V RP1: Embossed Carrier Pack (SOT-89) 6: 600V SOT89 SOT223 (alternate orientation) 8: 800V AP: Ammo Pack (TO-92) CURRENT SENSITIVITY & TYPE X8: 0.8A S1: 5µA Sensitive SCR Line1 = Littelfuse Part Number Line2 = continuation…Littelfuse Part Number S2: 50µA Sensitive SCR Y = Last Digit of Calendar Year S: 200µA Sensitive SCR M = Letter Month Code (A-L for Jan-Dec) L = Location Code PACKAGE TYPE DD = Calendar Date E: TO-92 TO-92 T: SOT-223 B: SOT-89 © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/05/19