Slotted Optical Switch OPB855 Features:  Low profile 0.27” (6.86 mm) overall height  Printed PCBoard mounting  0.205” (5.21 mm) wide and 0.220 (5.59 mm) deep slot  0.380” (9.65 mm) lead spacing  Opaque plastic housing Description: The OPB855 slotted optical switch consists of an infrared emitting diode and a NPN silicon phototransistor, mounted on opposite sides of a 0.205” (5.21 mm) wide slot in an inexpensive plastic housing. Switching of the phototransistor occurs whenever an opaque object passes through the slot. Applications:  Non-contact interruptive object sensing  Assembly line automation  Machine automation  Equipment security  Machine safety Pin # Description 1 Anode 2 Cathode 3 Collector 4 Emitter RoHS General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue A 11/2016 Page 1

Slotted Optical Switch OPB855 Electrical Specifications Absolute Maximum Ratings (T =25°C unless otherwise noted) A Storage & Operating Temperature Range -40°C to +85° C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron](1) 260° C Input Diode (See OP140 for additional information) Forward DC Current 50 mA Peak Forward Current (1 μs pulse width, 300 pps) 1 A Reverse DC Voltage 2 V Power Dissipation(2) 100 mW Output Phototransistor (See OP550 for additional information) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Collector DC Current 30 mA Power Dissipation(2) 100 mW Electrical Characteristics (T = 25°C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode V Forward Voltage - 1.30 1.80 V I = 20 mA F F I Reverse Current - - 100 µA V = 2 V R R Output Phototransistor V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA (BR)CEO C V Emitter-Collector Breakdown Voltage 5 - - V I = 100 µA (BR)ECO E I Collector-Emitter Dark Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Combined V Collector-Emitter Saturation Voltage - - 0.4 V I = 400 µA, I = 20 mA CE(SAT) C F I On-State Collector Current 1.50 - 20.0 mA V = 5 V, I = 20 mA C(ON) CE F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/°C above 25 ° C. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (4) All parameters tested using pulse technique. General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue A 11/2016 Page 2

Slotted Optical Switch OPB855 OPB855 - Flag in Middle of Slot 120% 100% % e s n o 80% p s e R n) 60% o ( C al I 40% c pi y Right to Left T 20% Left to Right Top to Bottom 0% -0.125 -0.075 -0.025 0.025 0.075 0.125 Displacement Distance (inches) Test Schematic General Note TT Electronics | Optek Technology, Inc. TT Electronics reserves the right to make changes in product specification without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200 notice or liability. All information is subject to TT Electronics’ own data and is www.ttelectronics.com | sensors@ttelectronics.com considered accurate at time of going to print. © TT electronics plc Issue A 11/2016 Page 3

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