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  • 型号: NUP4102XV6T1G
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
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NUP4102XV6T1G产品简介:

ICGOO电子元器件商城为您提供NUP4102XV6T1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NUP4102XV6T1G价格参考¥2.01-¥5.38。ON SemiconductorNUP4102XV6T1G封装/规格:TVS - 二极管, 。您可以下载NUP4102XV6T1G参考资料、Datasheet数据手册功能说明书,资料中有NUP4102XV6T1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

电路保护

描述

TVS DIODE 12VWM 25VC SOT563TVS二极管阵列 MI ZNR QUAD ARRY

产品分类

TVS - 二极管

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,TVS二极管,TVS二极管阵列,ON Semiconductor NUP4102XV6T1G-

数据手册

点击此处下载产品Datasheet

产品型号

NUP4102XV6T1G

PCN设计/规格

点击此处下载产品Datasheet

不同频率时的电容

13pF @ 1MHz

产品种类

TVS二极管阵列

供应商器件封装

SOT-563

其它名称

NUP4102XV6T1GOSCT

击穿电压

17.8 V

功率-峰值脉冲

75W

包装

剪切带 (CT)

单向通道

-

双向通道

4

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

SOT-563,SOT-666

封装/箱体

SOT-563

尺寸

1.2 mm W x 1.6 mm L

峰值浪涌电流

3 A

峰值脉冲功率耗散

100 W

工作温度

-40°C ~ 125°C (TJ)

工作电压

12 V

工厂包装数量

4000

应用

通用

最大工作温度

+ 125 C

最小工作温度

- 40 C

极性

Bidirectional

标准包装

1

电压-击穿(最小值)

13.6V

电压-反向关态(典型值)

12V (最小值)

电压-箝位(最大值)@Ipp

25V

电容

15 pF

电流-峰值脉冲(10/1000µs)

3A (8/20µs)

电源线路保护

端接类型

SMD/SMT

类型

齐纳

系列

NUP4102XV6

通道

4 Channels

钳位电压

25 V

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PDF Datasheet 数据手册内容提取

NUP4102XV6 6−Pin Bi−Directional Quad TVS Array This 6−Pin bi−directional transient suppressor array is designed for applications requiring transient overvoltage protection capability. It is intended for use in transient voltage and ESD sensitive equipment such as computers, printers, cell phones, medical equipment, and other http://onsemi.com applications. Its integrated design provides bi−directional protection for four separate lines using a single SOT−563 package. This device is 6 ideal for situations where board space is a premium. Features • 4 Bi−directional Protection for Four Lines in a 2, 5 Single SOT−563 Package 3 • Peak Power Dissipation − 75 W (8x20 (cid:2)sec Waveform) • Low Leakage Current (100 nA @ 12 V) 1 • Low Capacitance (< 15 pF) • Provides ESD Protection for JEDEC Standards JESD22 − Machine Model = Class C − Human Body Model = Class 3B • Provides ESD Protection for IEC 61000−4−2, 15 kV (Air), SOT−563 8 kV (Contact) CASE 463A Mechanical Characteristics PLASTIC • Void Free, Transfer−Molded, Thermosetting Plastic Case • Corrosion Resistant Finish, Easily Solderable MARKING DIAGRAM • Package Designed for Optimal Automated Board Assembly • 6 5 4 Small Package Size for High Density Applications Applications RP M(cid:2) • (cid:2) GSM Handsets and Accessories • Other Telephone Sets 1 2 3 • Computers / Printers / Set−Top Boxes RP = Device Marking M = One Digit Date Code MAXIMUM RATINGS (TJ=25°C, unless otherwise specified) (cid:2) = Pb−Free Package (Note: Microdot may be in either location) Rating Symbol Value Unit Peak Power Dissipation PPK 75 W 8x20 (cid:2)sec Double Exponential Waveform, (Note 1) ORDERING INFORMATION Operating Junction Temperature Range TJ −40 to °C Device Package Shipping† 125 Storage Temperature Range TSTG −55 to °C NUP4102XV6T1G SOT−563 4000/Tape & Reel 150 (Pb−Free) Lead Solder Temperature – Maximum (10 sec) TL 260 °C †For information on tape and reel specifications, including part orientation and tape sizes, please Human Body Model ( HBM) ESD 16 kV refer to our Tape and Reel Packaging Specification Machine Model (MM) 0.4 Brochure, BRD8011/D. IEC 61000−4−2 Air (ESD) 30 IEC 61000−4−2 Contact (ESD) 30 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Non−repetitive current pulse per Figure 3. © Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: January, 2006 − Rev. 1 NUP4102XV6/D

NUP4102XV6 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) Parameter Conditions Symbol Min Typ Max Unit Reverse Working Voltage (Note 2) VRWM 12 V Breakdown Voltage IT = 1 mA, (Note 3) VBR 13.6 17.8 V Reverse Leakage Current VRWM = 12 V IR 10 100 nA Clamping Voltage IPP = 3 A, (8x20 (cid:2)sec VC 25 V Waveform) Maximum Peak Pulse Current 8x20 (cid:2)sec waveform IPP 3.0 A Capacitance VR = 0 V, f=1 MHz Cj 13 15 pF (Line to GND) 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT; Pulse Width 1 ms. TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise specified) 110 110 100 WAVEFORM 100 PARAMETERS P 90 P 90 tr = 8 (cid:2)s R I PP 80 td = 20 (cid:2)s R O 80 OF I 70 c−t WE 70 T 60 O 60 N P E 50 td = IPP/2 D 50 C E R 40 T 40 E A P 30 F R 30 O 20 20 % 10 10 0 0 0 5 10 15 20 25 30 0 25 50 75 100 125 150 t, TIME ((cid:2)s) TA, AMBIENT TEMPERATURE (°C) Figure 1. Pulse Waveform Figure 2. Power Derating Curve 24 14 GE (V) 22 tPT A= =1 02 5(cid:2)°sCec E (pF) 12 A C LT N 10 O 20 A G V ACIT 8 PIN 18 AP M C 6 A N L 16 O , CP CTI 4 M N LA 14 U 2 C J V 12 0 0.1 1 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 IPP, SURGE CURRENT (A) VBR, REVERSE VOLTAGE (V) Figure 3. Clamping Voltage vs. Peak Pulse Figure 4. Junction Capacitance vs. Reverse Current (10 (cid:2)sec Square Wave Pulse) Voltage http://onsemi.com 2

NUP4102XV6 PACKAGE DIMENSIONS SOT−563, 6−LEAD CASE 463A−01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS A 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD C −X− FINISH THICKNESS. MINIMUM LEAD THICKNESS K IS THE MINIMUM THICKNESS OF BASE MATERIAL. 6 5 4 MILLIMETERS INCHES B DIM MIN MAX MIN MAX −Y− S A 1.50 1.70 0.059 0.067 1 2 3 B 1.10 1.30 0.043 0.051 C 0.50 0.60 0.020 0.024 D 0.17 0.27 0.007 0.011 D 65 PL J G 0.50 BSC 0.020 BSC G 0.08 (0.003)M X Y KJ 00..0180 00..1380 00..000034 00..000172 S 1.50 1.70 0.059 0.067 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: http://onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Order Literature: http://www.onsemi.com/litorder Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 For additional information, please contact your Email: orderlit@onsemi.com Phone: 81−3−5773−3850 local Sales Representative. http://onsemi.com NUP4102XV6/D 3

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