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  • 型号: NRVBS360T3G
  • 制造商: ON Semiconductor
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NRVBS360T3G产品简介:

ICGOO电子元器件商城为您提供NRVBS360T3G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 NRVBS360T3G价格参考。ON SemiconductorNRVBS360T3G封装/规格:二极管 - 整流器 - 单, 肖特基 表面贴装 二极管 60V 3A SMC。您可以下载NRVBS360T3G参考资料、Datasheet数据手册功能说明书,资料中有NRVBS360T3G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 60V 3A SMC肖特基二极管与整流器 RECTFR 3.0 A 60 V SUR

产品分类

单二极管/整流器分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,ON Semiconductor NRVBS360T3G-

数据手册

点击此处下载产品Datasheet

产品型号

NRVBS360T3G

不同If时的电压-正向(Vf)

740mV @ 3A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

150µA @ 60V

二极管类型

肖特基

产品

Schottky Rectifiers

产品种类

肖特基二极管与整流器

供应商器件封装

SMC

其它名称

NRVBS360T3GOSCT

包装

剪切带 (CT)

反向恢复时间(trr)

-

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

DO-214AB,SMC

封装/箱体

SMC

峰值反向电压

60 V

工作温度-结

-65°C ~ 175°C

工作温度范围

- 65 C to + 175 C

工厂包装数量

2500

技术

Silicon

最大反向漏泄电流

150 uA

最大浪涌电流

125 A

标准包装

1

正向电压下降

0.74 V at 3 A

正向连续电流

4 A

热阻

11°C/W Jl

电压-DC反向(Vr)(最大值)

60V

电流-平均整流(Io)

3A

系列

MBRS360

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

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PDF Datasheet 数据手册内容提取

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier www.onsemi.com This device employs the Schottky Barrier principle in a large area SCHOTTKY BARRIER metal−to−silicon power diode. State−of−the−art geometry features RECTIFIERS epitaxial construction with oxide passivation and metal overlay 3.0 AMPERES, 60 VOLTS contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features • Small Compact Surface Mountable Package with J−Bend Leads SMC 2−LEAD SMB • CASE 403AC CASE 403A−03 Rectangular Package for Automated Handling • Highly Stable Oxide Passivated Junction • MARKING DIAGRAMS Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guard−Ring for Stress Protection AYWW AYWW • NRVBS Prefix for Automotive and Other Applications Requiring B36(cid:2) B36(cid:2) (cid:2) (cid:2) Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS B36 = Specific Device Code A = Assembly Location** Compliant Y = Year WW = Work Week Mechanical Characteristics (cid:2) = Pb−Free Package • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 (Note: Microdot may be in either location) • Weight: 217 mg (Approximately), SMC **The Assembly Location code (A) is front side 95 mg (Approximately), SMB optional. In cases where the Assembly Location is • stamped in the package, the front side assembly code Finish: All External Surfaces Corrosion Resistant and Terminal may be blank. Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: ORDERING INFORMATION 260°C Max. for 10 Seconds • Device Package Shipping† Polarity: Polarity Band on Plastic Body Indicates Cathode Lead • MBRS360T3G SMC 2,500 / Device Meets MSL 1 Requirements (Pb−Free) Tape & Reel • ESD Ratings: MBRS360BT3G SMB 2,500 / ♦ Machine Model, C (Pb−Free) Tape & Reel ♦ Human Body Model, 3B NRVBS360T3G* SMC 2,500 / (Pb−Free) Tape & Reel NRVBS360BT3G* SMB 2,500 / (Pb−Free) Tape & Reel NRVBS360BT3G SMB 2,500 / −VF01* (Pb−Free) Tape & Reel SBRS360BT3G SMB 2,500 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2017 − Rev. 12 MBRS360T3/D

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 60 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) 3.0 @ TL = 137°C A 4.0 @ TL = 127°C Nonrepetitive Peak Surge Current IFSM A (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 125 Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R(cid:2)JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) R(cid:2)JL °C/W SMC Package 11 SMB Package 15 Thermal Resistance, Junction−to−Ambient (Note 2) R(cid:2)JA °C/W SMC Package 136 SMB Package 145 Thermal Resistance, Junction−to−Ambient (Note 3) R(cid:2)JA °C/W SMC Package 71 SMB Package (Note 4) 73 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 5) VF V (iF = 3.0 A, TJ = 25°C) 0.63 Maximum Instantaneous Reverse Current (Note 5) iR mA (Rated dc Voltage, TJ = 25°C) 0.03 (Rated dc Voltage, TJ = 100°C) 3.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with minimum recommended pad size, PC Board FR4. 3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 4. Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. 5. Pulse Test: Pulse Width = 300 (cid:3)s, Duty Cycle ≤2.0%. www.onsemi.com 2

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G TYPICAL ELECTRICAL CHARACTERISTICS 10 10 RD TJ = 150°C RD WA WA TJ = 175°C OR TJ = 175°C OR FA) 1 FA) 1 OUS NT ( TJ = 100°C OUS NT ( TJ = 150°C NERRE TJ = 25°C NERRE TJ = 25°C TAU TAU ANC0.1 ANC0.1 TJ = 100°C T T S S N N , IF TJ = −40°C , IF TJ = −40°C I I 0.01 0.01 0.0 0.2 0.4 0.6 0.8 0.0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E+00 SE 1.0E−01 TJ = 175°C R E V 1.0E−02 E OUS RNT (A) 1.0E−03 TJ = 100°C TJ = 150°C EE ANRR 1.0E−04 TU NC A 1.0E−05 NST TJ = 25°C , IR 1.0E−06 I 1.0E−07 0 10 20 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current 1.0E+00 E RS 1.0E−01 TJ = 175°C E V US RET (A) 1.0E−02 TJ = 150°C TJ = 100°C ON EE 1.0E−03 NR AR TU NC 1.0E−04 A ST TJ = 25°C N , IR 1.0E−05 I 1.0E−06 0 10 20 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current www.onsemi.com 3

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G A) 5 W) 4 NT ( dc N ( 3.5 TJ = 175°C SQUARE E O WAVE R 4 TI R A 3 CU SQUARE WAVE SIP dc RD 3 DIS 2.5 WA ER 2 R W GE FO 2 E PO 1.5 A G 1 ER 1 RA , AVF(AV) 00R(cid:2)JL2 =0 15°C40/W 60 80 100 120 140 160 180 P, AVEFO 0.050 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 I TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1000 TJ = 25°C F) p E ( C N A CIT 100 A P A C C, 10 0 10 20 30 40 50 60 70 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance www.onsemi.com 4

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G 100 E NS D = 0.5 O P S E 0.2 R AL 10 M 0.1 R E H T T 0.05 P(pk) N E NSI 1 Test Type > min pad 1 oz A r(t), TR 0.01 t1 t2 R(cid:2)JC = min pad 1 oz C/W SINGLE PULSE DUTY CYCLE, D = t1/t2 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, TIME (s) Figure 8. Thermal Response, Junction−to−Ambient, SMC Package 100 50% Duty Cycle 20% 10 10% 5% W) 2% °C/ 1 P(pk) R(t) ( 1% Test Type > min pad 1 oz 0.1 t1 R(cid:2)JC = min pad 1 oz C/W t2 Single Pulse DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (s) Figure 9. Typical Thermal Response, Junction−to−Ambient, SMB Package www.onsemi.com 5

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G PACKAGE DIMENSIONS SMC 2−LEAD CASE 403AC ISSUE B NOTES: HE 1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. E 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.254mm PER SIDE. 4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H. 5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA DETERMINED BY DIMENSION L. MILLIMETERS INCHES D DIM MIN MAX MIN MAX A 1.95 2.61 0.077 0.103 A1 c J A1 0.05 0.20 0.002 0.008 DETAIL A A2 1.90 2.41 0.075 0.095 b 2.90 3.20 0.114 0.126 TOP VIEW c 0.15 0.41 0.006 0.016 D 5.55 6.25 0.219 0.246 DETAIL A E 6.60 7.15 0.260 0.281 HE 7.75 8.15 0.305 0.321 A2 A L 0.75 1.60 0.030 0.063 L b SIDE VIEW END VIEW RECOMMENDED SOLDERING FOOTPRINT* 8.750 0.344 J 3.790 2X 0.149 2X 2.250 (cid:2) mm (cid:3)SCALE 4:1 0.089 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6

MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 1.95 2.30 2.47 0.077 0.091 0.097 b D A1 0.05 0.10 0.20 0.002 0.004 0.008 b 1.96 2.03 2.20 0.077 0.080 0.087 c 0.15 0.23 0.31 0.006 0.009 0.012 DD 3.30 3.56 3.95 0.130 0.140 0.156 E 4.06 4.32 4.60 0.160 0.170 0.181 POOPLTAIORNITAYL IANSD INCEAETDOERD HE 5.21 5.44 5.60 0.205 0.214 0.220 L 0.76 1.02 1.60 0.030 0.040 0.063 L1 0.51 REF 0.020 REF A A1 L L1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 (cid:2) (cid:3) 0.085 mm SCALE 8:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MBRS360T3/D 7

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