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  • 型号: MMSZ5228BT1G
  • 制造商: ON Semiconductor
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MMSZ5228BT1G产品简介:

ICGOO电子元器件商城为您提供MMSZ5228BT1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MMSZ5228BT1G价格参考¥0.17-¥0.24。ON SemiconductorMMSZ5228BT1G封装/规格:二极管 - 齐纳 - 单, Zener Diode 3.9V 500mW ±5% Surface Mount SOD-123。您可以下载MMSZ5228BT1G参考资料、Datasheet数据手册功能说明书,资料中有MMSZ5228BT1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ZENER 3.9V 500MW SOD123稳压二极管 3.9V 500mW

产品分类

单二极管/齐纳分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,稳压二极管,ON Semiconductor MMSZ5228BT1G-

数据手册

点击此处下载产品Datasheet

产品型号

MMSZ5228BT1G

PCN组件/产地

点击此处下载产品Datasheet

PCN设计/规格

点击此处下载产品Datasheet

不同If时的电压-正向(Vf)

900mV @ 10mA

不同 Vr时的电流-反向漏电流

10µA @ 1V

产品目录页面

点击此处下载产品Datasheet

产品种类

稳压二极管

供应商器件封装

SOD-123

其它名称

MMSZ5228BT1GOSDKR

功率-最大值

500mW

功率耗散

500 mW

包装

Digi-Reel®

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

容差

±5%

封装

Reel

封装/外壳

SOD-123

封装/箱体

SOD-123

工作温度

-55°C ~ 150°C

工厂包装数量

3000

最大反向漏泄电流

10 uA

最大工作温度

+ 150 C

最大齐纳阻抗

23 Ohms

最小工作温度

- 55 C

标准包装

1

电压-齐纳(标称值)(Vz)

3.9V

电压容差

5 %

系列

MMSZ52

配置

Single

阻抗(最大值)(Zzt)

23 欧姆

齐纳电压

3.9 V

齐纳电流

10 mA

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PDF Datasheet 数据手册内容提取

MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series Zener Voltage Regulators 500 mW SOD−123 Surface Mount Three complete series of Zener diodes are offered in the convenient, www.onsemi.com surface mount plastic SOD−123 package. These devices provide a convenient alternative to the leadless 34−package style. Zener voltage in this series are specified with device junction in thermal equilibrium. Features • 500 mW Rating on FR−4 or FR−5 Board • SOD−123 Wide Zener Reverse Voltage Range − 2.4 V to 110 V @ Thermal CASE 425 Equilibrium* STYLE 1 • Package Designed for Optimal Automated Board Assembly • Small Package Size for High Density Applications • 1 2 General Purpose, Medium Current Cathode Anode • ESD Rating of Class 3 (>16 kV) per Human Body Model • SZ Prefix for Automotive and Other Applications Requiring Unique MARKING DIAGRAM Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • xxM(cid:2) These are Pb−Free Devices* 1 (cid:2) Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case xx = Device Code (Refer to page 3) FINISH: Corrosion resistant finish, easily solderable M = Date Code MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: (cid:2) = Pb−Free Package 260°C for 10 Seconds (Note: Microdot may be in either location) POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 ORDERING INFORMATION MAXIMUM RATINGS Device Package Shipping† Rating Symbol Max Units MMSZ52xxBT1G, SOD−123 3,000 / SZMMSZ52xxBT1G (Pb−Free) Tape & Reel Total Power Dissipation on FR−5 Board, PD (Note 1) @ TL = 75°C 500 mW MMSZ52xxCT1G, SOD−123 3,000 / Derated above 75°C 6.7 mW/°C SZMMSZ52xxCT1G (Pb−Free) Tape & Reel Thermal Resistance, Junction−to−Ambient R(cid:2)JA 340 °C/W MMSZ52xxBT3G, SOD−123 10,000 / (Note 2) SZMMSZ52xxBT3G (Pb−Free) Tape & Reel Thermal Resistance, Junction−to−Lead R(cid:2)JL 150 °C/W MMSZ52xxCT3G, SOD−123 10,000 / (Note 2) SZMMSZ52xxCT3G (Pb−Free) Tape & Reel Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C †For information on tape and reel specifications, including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specifications device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. 1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint. 2. Thermal Resistance measurement obtained via infrared Scan Method. DEVICE MARKING INFORMATION *For additional info on thermal equilibrium, please download, ON Semiconductor See specific marking information in the device marking TVS/Zener Theory and Design Considerations Handbook, HBD854/D. column of the Electrical Characteristics table on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 − Rev. 15 MMSZ5221BT1/D

MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 0.95 V Max. @ IF = 10 mA) IF Symbol Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT VZ VR V IZK Reverse Current IIRZTVF ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF Zener Voltage Regulator www.onsemi.com 2

MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series 5% TOLERANCE FG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Leakage Cur- Zener Voltage (Notes 3 and 4) Zener Impedance (Note 5) rent Device VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR Device* Marking Min Nom Max mA (cid:2) (cid:2) mA (cid:3)A Volts MMSZ5221BT1G C1 2.28 2.4 2.52 20 30 1200 0.25 100 1 MMSZ5222BT1G C2 2.38 2.5 2.63 20 30 1250 0.25 100 1 MMSZ5223BT1G C3 2.57 2.7 2.84 20 30 1300 0.25 75 1 MMSZ5224BT1G C4 2.66 2.8 2.94 20 30 1400 0.25 75 1 MMSZ5225BT1G C5 2.85 3.0 3.15 20 29 1600 0.25 50 1 MMSZ5226BT1G D1 3.14 3.3 3.47 20 28 1600 0.25 25 1 MMSZ5227BT1G D2 3.42 3.6 3.78 20 24 1700 0.25 15 1 MMSZ5228BT1G D3 3.71 3.9 4.10 20 23 1900 0.25 10 1 MMSZ5229BT1G D4 4.09 4.3 4.52 20 22 2000 0.25 5 1 MMSZ5230BT1G D5 4.47 4.7 4.94 20 19 1900 0.25 5 2 MMSZ5231BT1G E1 4.85 5.1 5.36 20 17 1600 0.25 5 2 MMSZ5232BT1G E2 5.32 5.6 5.88 20 11 1600 0.25 5 3 MMSZ5233BT1G E3 5.70 6.0 6.30 20 7 1600 0.25 5 3.5 MMSZ5234BT1G E4 5.89 6.2 6.51 20 7 1000 0.25 5 4 MMSZ5235BT1G E5 6.46 6.8 7.14 20 5 750 0.25 3 5 MMSZ5236BT1G F1 7.13 7.5 7.88 20 6 500 0.25 3 6 MMSZ5237BT1G F2 7.79 8.2 8.61 20 8 500 0.25 3 6.5 MMSZ5238BT1G F3 8.27 8.7 9.14 20 8 600 0.25 3 6.5 MMSZ5239BT1G F4 8.65 9.1 9.56 20 10 600 0.25 3 7 MMSZ5240BT1G F5 9.50 10 10.50 20 17 600 0.25 3 8 MMSZ5241BT1G H1 10.45 11 11.55 20 22 600 0.25 2 8.4 MMSZ5242BT1G/T3G H2 11.40 12 12.60 20 30 600 0.25 1 9.1 MMSZ5243BT1G H3 12.35 13 13.65 9.5 13 600 0.25 0.5 9.9 MMSZ5244BT1G H4 13.30 14 14.70 9.0 15 600 0.25 0.1 10 MMSZ5245BT1G H5 14.25 15 15.75 8.5 16 600 0.25 0.1 11 MMSZ5246BT1G J1 15.20 16 16.80 7.8 17 600 0.25 0.1 12 MMSZ5247BT1G J2 16.15 17 17.85 7.4 19 600 0.25 0.1 13 MMSZ5248BT1G J3 17.10 18 18.90 7.0 21 600 0.25 0.1 14 MMSZ5249BT1G J4 18.05 19 19.95 6.6 23 600 0.25 0.1 14 MMSZ5250BT1G J5 19.00 20 21.00 6.2 25 600 0.25 0.1 15 MMSZ5251BT1G K1 20.90 22 23.10 5.6 29 600 0.25 0.1 17 MMSZ5252BT1G K2 22.80 24 25.20 5.2 33 600 0.25 0.1 18 MMSZ5253BT1G K3 23.75 25 26.25 5.0 35 600 0.25 0.1 19 MMSZ5254BT1G/T3G K4 25.65 27 28.35 4.6 41 600 0.25 0.1 21 MMSZ5255BT1G K5 26.60 28 29.40 4.5 44 600 0.25 0.1 21 MMSZ5256BT1G M1 28.50 30 31.50 4.2 49 600 0.25 0.1 23 MMSZ5257BT1G M2 31.35 33 34.65 3.8 58 700 0.25 0.1 25 MMSZ5258BT1G/T3G M3 34.20 36 37.80 3.4 70 700 0.25 0.1 27 MMSZ5259BT1G M4 37.05 39 40.95 3.2 80 800 0.25 0.1 30 MMSZ5260BT1G M5 40.85 43 45.15 3.0 93 900 0.25 0.1 33 MMSZ5261BT1G N1 44.65 47 49.35 2.7 105 1000 0.25 0.1 36 MMSZ5262BT1G N2 48.45 51 53.55 2.5 125 1100 0.25 0.1 39 MMSZ5263BT1G N3 53.20 56 58.80 2.2 150 1300 0.25 0.1 43 MMSZ5264BT1G N4 57.00 60 63.00 2.1 170 1400 0.25 0.1 46 MMSZ5265BT1G N5 58.90 62 65.10 2.0 185 1400 0.25 0.1 47 MMSZ5266BT1G P1 64.60 68 71.40 1.8 230 1600 0.25 0.1 52 MMSZ5267BT1G P2 71.25 75 78.75 1.7 270 1700 0.25 0.1 56 MMSZ5268BT1G P3 77.90 82 86.10 1.5 330 2000 0.25 0.1 62 MMSZ5269BT1G P4 82.65 87 91.35 1.4 370 2200 0.25 0.1 68 MMSZ5270BT1G P5 86.45 91 95.55 1.4 400 2300 0.25 0.1 69 MMSZ5272BT1G/T3G R2 104.5 110 115.5 1.1 750 3000 0.25 0.1 84 *Includes SZ-prefix devices where applicable. 3. “B” Suffix Type numbers shown have a standard tolerance of ±5% on the nominal Zener voltages. 4. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. 5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz. www.onsemi.com 3

MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series 2% TOLERANCE FG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA) Leakage Cur- Zener Voltage (Notes 6 and 7) Zener Impedance (Note 8) rent Device VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR Device* Marking Min Nom Max mA (cid:2) (cid:2) mA (cid:3)A Volts MMSZ5226CT1G TD 3.234 3.3 3.366 20 28 1600 0.25 25 1 MMSZ5231CT1G TG 4.998 5.1 5.202 20 17 1600 0.25 5 2 MMSZ5232CT1G TH 5.488 5.6 5.712 20 11 1600 0.25 5 3 MMSZ5245CT1G TK 14.70 15 15.30 8.5 16 600 0.25 0.1 11 MMSZ5248CT1G TL 17.64 18 18.36 7.0 21 600 0.25 0.1 14 MMSZ5250CT1G TN 19.60 20 20.40 6.2 25 600 0.25 0.1 15 MMSZ5252CT1G TQ 23.52 24 24.48 5.2 33 600 0.25 0.1 18 MMSZ5256CT1G TW 29.40 30 30.60 4.2 49 600 0.25 0.1 23 MMSZ5258CT1G TX 35.28 36 36.72 3.4 70 700 0.25 0.1 27 6. “C” Suffix Type numbers shown have a standard tolerance of ±2% on the nominal Zener voltages. 7. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C. 8. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the ac current applied. The specified limits are for IZ(AC) = 0.1 IZ(dc) with the AC frequency = 1 kHz. *Includes SZ-prefix devices where applicable. www.onsemi.com 4

MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series TYPICAL CHARACTERISTICS C) C) ° 8 °1000 V/ V/ NT (m 67 TFOYPRI CMAMLS TZC5 2VxAxLBUTE1SG SERIES, NT (m TFSYOZPMRIM CMASMLZS 5TZ2Cx5 x2VBxAxTLB1UTGE1 SSGE SREIERSIES, E SZMMSZ52xxBT1G SERIES E CI 5 CI FFI 4 VZ @ IZT FFI 100 E E O 3 O C C RE 2 RE VZ @ IZT U 1 U T T 10 A A R 0 R E E P −1 P M M TE−2 TE , Z−3 , Z 1 V 2 3 4 5 6 7 8 9 10 11 12 V 10 100 200 (cid:2) (cid:2) VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients Figure 2. Temperature Coefficients (Temperature Range −55°C to +150°C) (Temperature Range −55°C to +150°C) 1.2 1000 S) T T RECTANGULAR 1.0 A W WAVEFORM, TA = 25°C R ( 0.8 PD versus TL E100 W O P 0.6 PD versus TA GE R U 0.4 S 10 K A E 0.2 P , k p P 0 1 0 25 50 75 100 125 150 0.1 1 10 100 1000 T, TEMPERATURE (°C) PW, PULSE WIDTH (ms) Figure 3. Steady State Power Derating Figure 4. Maximum Nonrepetitive Surge Power 1000 1000 (cid:3)CE () IZ = 1 mA TfIZ =J( A =1C 2)k 5=H° z0C.1 IZ(DC) T (mA) 7951 VV ((MMMMSSZZ55227607BBTT11GG)) N N A100 E100 D R E 5 mA R P U M C MIC I 20 mA ARD NA 10 RW 10 DY O Z, ZT I, FF 150°C 75°C 25°C 0°C 1 1 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V) Figure 5. Effect of Zener Voltage on Figure 6. Typical Forward Voltage Zener Impedance www.onsemi.com 5

MMSZ52xxxT1G Series, SZMMSZ52xxxT1G Series TYPICAL CHARACTERISTICS 1000 A)1000 (cid:4) 0 V BIAS TA = 25°C NT ( 100 E pF) 1 V BIAS RR 10 E (100 CU NC E 1 CAPACITA 10 B50IA%S O AFT VZ NOM , LEAKAGR 00.0.11 +150°C C, I0.001 +25°C −55°C 0.0001 1 0.00001 1 10 100 0 10 20 30 40 50 60 70 80 90 VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 7. Typical Capacitance Figure 8. Typical Leakage Current 100 100 TA = 25°C TA = 25°C A) A) m 10 m 10 T ( T ( N N E E R R R R U 1 U 1 C C R R E E N N E E Z0.1 Z0.1 , Z , Z I I 0.01 0.01 0 2 4 6 8 10 12 10 30 50 70 90 VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Figure 9. Zener Voltage versus Zener Current Figure 10. Zener Voltage versus Zener Current (V Up to 12 V) (12 V to 91 V) Z 1.015 D) ZE 1.010 VZ = 3.0 V LI A 1.005 M R O 1.000 N E ( 0.995 G A T 0.990 L O V 0.985 R NE 0.980 47 V E V, ZZ00..997705 91 V 1 10 100 1K 10K 100K 1M PW, PULSE WIDTH (ms) Figure 11. SOD−123 (plastic) 500 Watt Device www.onsemi.com 6

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI A1 Y14.5M, 1982. ÂÂ1ÂÂ 2.CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES ÂÂÂÂ DIM MIN NOM MAX MIN NOM MAX A 0.94 1.17 1.35 0.037 0.046 0.053 ÂÂÂÂ A1 0.00 0.05 0.10 0.000 0.002 0.004 b 0.51 0.61 0.71 0.020 0.024 0.028 HE E c --- --- 0.15 --- --- 0.006 D 1.40 1.60 1.80 0.055 0.063 0.071 E 2.54 2.69 2.84 0.100 0.106 0.112 HE 3.56 3.68 3.86 0.140 0.145 0.152 L 0.25 --- --- 0.010 --- --- (cid:2) 0° --- 10° 0° --- 10° 2 (cid:2) GENERIC b L MARKING DIAGRAM* C XXXM(cid:2) 1 SOLDERING FOOTPRINT* (cid:2) 0.91 XXX = Specific Device Code 0.036 ÉÉÉ ÉÉÉ M = Date Code (cid:2) = Pb−Free Package ÉÉÉ ÉÉÉ 1.22 (Note: Microdot may be in either location) 0.048 ÉÉÉ ÉÉÉ *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or 2.36 microdot “ (cid:2)”, may or may not be present. 0.093 4.19 STYLE 1: 0.165 PIN 1. CATHODE 2. ANODE (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42927B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: SOD−123 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: TECHNICAL SUPPORT Email Requests to: orderlit@onsemi.com North American Technical Support: Europe, Middle East and Africa Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 ON Semiconductor Website: www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ www.onsemi.com 1