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  • 型号: MM3Z4V7T1G
  • 制造商: ON Semiconductor
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MM3Z4V7T1G产品简介:

ICGOO电子元器件商城为您提供MM3Z4V7T1G由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MM3Z4V7T1G价格参考。ON SemiconductorMM3Z4V7T1G封装/规格:二极管 - 齐纳 - 单, Zener Diode 4.7V 300mW ±6% Surface Mount SOD-323。您可以下载MM3Z4V7T1G参考资料、Datasheet数据手册功能说明书,资料中有MM3Z4V7T1G 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ZENER 4.7V 200MW SOD323稳压二极管 4.7V 200mW

产品分类

单二极管/齐纳分离式半导体

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,稳压二极管,ON Semiconductor MM3Z4V7T1G-

数据手册

点击此处下载产品Datasheet

产品型号

MM3Z4V7T1G

PCN设计/规格

点击此处下载产品Datasheet

不同If时的电压-正向(Vf)

900mV @ 10mA

不同 Vr时的电流-反向漏电流

3µA @ 2V

产品目录页面

点击此处下载产品Datasheet

产品种类

稳压二极管

供应商器件封装

SOD-323

其它名称

MM3Z4V7T1GOSCT

功率-最大值

200mW

功率耗散

200 mW

包装

剪切带 (CT)

商标

ON Semiconductor

安装类型

表面贴装

安装风格

SMD/SMT

容差

±6%

封装

Reel

封装/外壳

SC-76,SOD-323

封装/箱体

SOD-323

工作温度

-65°C ~ 150°C

工厂包装数量

3000

最大反向漏泄电流

3 uA

最大工作温度

+ 150 C

最大齐纳阻抗

80 Ohms

最小工作温度

- 65 C

标准包装

1

电压-齐纳(标称值)(Vz)

4.7V

电压容差

6 %

电压温度系数

- 1.65 mV/K

系列

MM3Z4V7

配置

Single

阻抗(最大值)(Zzt)

80 欧姆

齐纳电压

4.7 V

齐纳电流

10 mA

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PDF Datasheet 数据手册内容提取

MM3ZxxxT1G Series, SZMM3ZxxxT1G Series Zener Voltage Regulators 300 mW SOD−323 Surface Mount This series of Zener diodes is packaged in a SOD−323 surface http://onsemi.com mount package that has a power dissipation of 300 mW. They are designed to provide voltage regulation protection and are especially attractive in situations where space is at a premium. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. SOD−323 Specification Features: CASE 477 • Standard Zener Breakdown Voltage Range − 2.4 V to 75 V STYLE 1 • Steady State Power Rating of 300 mW • Small Body Outline Dimensions: 0.067” x 0.049” (1.7 mm x 1.25 mm) 1 2 • Cathode Anode Low Body Height: 0.035” (0.9 mm) • Package Weight: 4.507 mg/Unit MARKING DIAGRAM • ESD Rating of Class 3 (> 16 kV) per Human Body Model • SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable xx M (cid:2) (cid:2) • These are Pb−Free Devices* Mechanical Characteristics: CASE: Void-free, Transfer-Molded Plastic xx = Specific Device Code FINISH: All External Surfaces are Corrosion Resistant M = Date Code* (cid:2) = Pb−Free Package MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds (Note: Microdot may be in either location) *Date Code orientation may vary depending LEADS: Plated with Pb−Sn or Sn Only (Pb−Free) upon manufacturing location. POLARITY: Cathode Indicated by Polarity Band FLAMMABILITY RATING: UL 94 V−0 ORDERING INFORMATION MOUNTING POSITION: Any Device Package Shipping† MAXIMUM RATINGS MM3ZxxxT1G SOD−323 3,000 / (Pb−Free) Tape & Reel Rating Symbol Max Unit Total Device Dissipation FR−4 Board, PD SZMM3ZxxxT1G SOD−323 3,000 / (Note 1) @ TA = 25°C 300 mW (Pb−Free) Tape & Reel Derate above 25°C 2.4 mW/°C †For information on tape and reel specifications, Thermal Resistance, Junction−to−Ambient R(cid:2)JA 416 °C/W including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be DEVICE MARKING INFORMATION assumed, damage may occur and reliability may be affected. 1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2. See specific marking information in the device marking column of the Electrical Characteristics table on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: September, 2014 − Rev. 11 MM3Z2V4T1/D

MM3ZxxxT1G Series, SZMM3ZxxxT1G Series ELECTRICAL CHARACTERISTICS I Symbol Parameter IF VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current VZ VR ZZK Maximum Zener Impedance @ IZK IR VF V IR Reverse Leakage Current @ VR IZT VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF (cid:3)VZ Maximum Temperature Coefficient of VZ C Max. Capacitance @VR = 0 and f = 1 MHz Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA for all types) Zener Voltage (Note 2) Zener Impedance Leakage Current (cid:2)VZ C ZZT (mV/k) @ VR = 0 Device VZ (Volts) @ IZT @ IZT ZZK @ IZK IR @ VR @ IZT f = 1 MHz Device* Marking Min Nom Max mA (cid:3) (cid:3) mA (cid:4)A Volts Min Max pF MM3Z2V4T1G 00 2.2 2.4 2.6 5 100 1000 0.5 50 1.0 −3.5 0 450 MM3Z2V7T1G 01 2.5 2.7 2.9 5 100 1000 0.5 20 1.0 −3.5 0 450 MM3Z3V0T1G 02 2.8 3.0 3.2 5 100 1000 0.5 10 1.0 −3.5 0 450 MM3Z3V3T1G 05 3.1 3.3 3.5 5 95 1000 0.5 5 1.0 −3.5 0 450 MM3Z3V6T1G 06 3.4 3.6 3.8 5 90 1000 0.5 5 1.0 −3.5 0 450 MM3Z3V9T1G 07 3.7 3.9 4.1 5 90 1000 0.5 3 1.0 −3.5 −2.5 450 MM3Z4V3T1G 08 4.0 4.3 4.6 5 90 1000 0.5 3 1.0 −3.5 0 450 MM3Z4V7T1G 09 4.4 4.7 5.0 5 80 800 0.5 3 2.0 −3.5 0.2 260 MM3Z5V1T1G 0A 4.8 5.1 5.4 5 60 500 0.5 2 2.0 −2.7 1.2 225 MM3Z5V6T1G 0C 5.2 5.6 6.0 5 40 200 0.5 1 2.0 −2.0 2.5 200 MM3Z6V2T1G 0E 5.8 6.2 6.6 5 10 100 0.5 3 4.0 0.4 3.7 185 MM3Z6V8T1G 0F 6.4 6.8 7.2 5 15 160 0.5 2 4.0 1.2 4.5 155 MM3Z7V5T1G 0G 7.0 7.5 7.9 5 15 160 0.5 1 5.0 2.5 5.3 140 MM3Z8V2T1G 0H 7.7 8.2 8.7 5 15 160 0.5 0.7 5.0 3.2 6.2 135 MM3Z9V1T1G 0K 8.5 9.1 9.6 5 15 160 0.5 0.2 7.0 3.8 7.0 130 MM3Z10VT1G 0L 9.4 10 10.6 5 20 160 0.5 0.1 8.0 4.5 8.0 130 MM3Z11VT1G 0M 10.4 11 11.6 5 20 160 0.5 0.1 8.0 5.4 9.0 130 MM3Z12VT1G 0N 11.4 12 12.7 5 25 80 0.5 0.1 8.0 6.0 10 130 MM3Z13VT1G 0P 12.4 13.25 14.1 5 30 80 0.5 0.1 8.0 7.0 11 120 MM3Z15VT1G 0T 14.3 15 15.8 5 30 80 0.5 0.05 10.5 9.2 13 110 MM3Z16VT1G 0U 15.3 16.2 17.1 5 40 80 0.5 0.05 11.2 10.4 14 105 MM3Z18VT1G 0W 16.8 18 19.1 5 45 80 0.5 0.05 12.6 12.4 16 100 MM3Z20VT1G 0Z 18.8 20 21.2 5 55 100 0.5 0.05 14.0 14.4 18 85 MM3Z22VT1G 10 20.8 22 23.3 5 55 100 0.5 0.05 15.4 16.4 20 85 MM3Z24VT1G 11 22.8 24.2 25.6 5 70 120 0.5 0.05 16.8 18.4 22 80 MM3Z27VT1G 12 25.1 27 28.9 2 80 300 0.5 0.05 18.9 21.4 25.3 70 MM3Z30VT1G 14 28 30 32 2 80 300 0.5 0.05 21.0 24.4 29.4 70 MM3Z33VT1G 18 31 33 35 2 80 300 0.5 0.05 23.2 27.4 33.4 70 MM3Z36VT1G 19 34 36 38 2 90 500 0.5 0.05 25.2 30.4 37.4 70 MM3Z39VT1G 20 37 39 41 2 130 500 0.5 0.05 27.3 33.4 41.2 45 MM3Z43VT1G 21 40 43 46 2 150 500 0.5 0.05 30.1 37.6 46.6 40 MM3Z47VT1G 1A 44 47 50 2 170 500 0.5 0.05 32.9 42.0 51.8 40 MM3Z51VT1G 1C 48 51 54 2 180 500 0.5 0.05 35.7 46.6 57.2 40 MM3Z56VT1G 1D 52 56 60 2 200 500 0.5 0.05 39.2 52.2 63.8 40 MM3Z62VT1G 2A 58 62 66 2 215 500 0.5 0.05 43.4 58.9 71.8 35 MM3Z68VT1G 1F 64 68 72 2 240 500 0.5 0.05 47.6 65.6 79.8 35 MM3Z75VT1G 1G 70 75 79 2 255 500 0.5 0.05 52.5 73.4 88.6 35 *Includes SZ-prefix devices where applicable. 2. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. http://onsemi.com 2

MM3ZxxxT1G Series, SZMM3ZxxxT1G Series TYPICAL CHARACTERISTICS 1000 1000 ΩE () TIZJ( A=C 2) 5=° 0C.1 IZ(DC) mA) NC f = 1 kHz T ( A N D100 E100 E R P R M U AMIC I IZ = 1 mA 5 mA ARD C 150°C N 10 W 10 Y R D O , ZT , FF Z I 75°C 25°C 0°C 1.0 1.0 3.0 10 80 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VZ, NOMINAL ZENER VOLTAGE VF, FORWARD VOLTAGE (V) Figure 1. Effect of Zener Voltage on Zener Impedance Figure 2. Typical Forward Voltage 1000 1000 TA = 25°C A) 100 μ F) NT ( 10 CE (p100 0 V BIAS 1 V BIAS RRE 1.0 N U A C +150°C T E 0.1 CI G A BIAS AT A P K 0.01 A 10 50% OF VZ NOM A C, C , LER0.001 +25°C I −55°C 0.0001 1.0 0.00001 4.0 10 70 0 10 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) VZ, NOMINAL ZENER VOLTAGE (V) Figure 3. Typical Capacitance Figure 4. Typical Leakage Current 100 100 TA = 25°C TA = 25°C A) A) m 10 m 10 T ( T ( N N E E R R R R U 1.0 U 1 C C R R E E N N E E Z 0.1 Z0.1 , Z , Z I I 0.01 0.01 0 2.0 4.0 6.0 8.0 10 12 10 30 50 70 90 VZ, ZENER VOLTAGE (V) VZ, ZENER VOLTAGE (V) Figure 5. Zener Voltage versus Zener Current Figure 6. Zener Voltage versus Zener Current (V Up to 12 V) (12 V to 75 V) Z http://onsemi.com 3

MM3ZxxxT1G Series, SZMM3ZxxxT1G Series TYPICAL CHARACTERISTICS 100 80 %) N ( O TI60 A P SI S DI40 R E W O P 20 0 0 25 50 75 100 125 150 TEMPERATURE (°C) Figure 7. Steady State Power Derating http://onsemi.com 4

MM3ZxxxT1G Series, SZMM3ZxxxT1G Series PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. HE 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING D WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. b 1 2 E MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.80 0.90 1.00 0.031 0.035 0.040 A1 0.00 0.05 0.10 0.000 0.002 0.004 A3 A3 0.15 REF 0.006 REF b 0.25 0.32 0.4 0.010 0.012 0.016 C 0.089 0.12 0.177 0.003 0.005 0.007 D 1.60 1.70 1.80 0.062 0.066 0.070 A E 1.15 1.25 1.35 0.045 0.049 0.053 L 0.08 0.003 HE 2.30 2.50 2.70 0.090 0.098 0.105 L C NOTE 5 A1 STYLE 1: NOTE 3 PIN 1.CATHODE 2.ANODE SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 (cid:2) (cid:3) mm SCALE 10:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 5163, Denver, Colorado 80217 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative http://onsemi.com MM3Z2V4T1/D 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MM3Z11VT1G MM3Z12VT1G MM3Z15VT1G MM3Z16VT1G MM3Z18VT1G MM3Z20VT1G MM3Z22VT1G MM3Z24VT1G MM3Z27VT1G MM3Z2V4T1G MM3Z2V7T1G MM3Z36VT1G MM3Z39VT1G MM3Z3V0T1G MM3Z3V3T1G MM3Z3V6T1G MM3Z3V9T1G MM3Z4V3T1G MM3Z4V7T1G MM3Z5V1T1G MM3Z5V6T1G MM3Z6V2T1G MM3Z6V8T1G MM3Z7V5T1G MM3Z8V2T1G MM3Z9V1T1G SZMM3Z4V7T1G SZMM3Z24VT1G MM3Z30VST1G MM3Z51VT1G MM3Z68VT1G MM3Z62VT1G MM3Z56VT1G MM3Z75VT1G SZMM3Z68VT1G SZMM3Z22VT1G