MBRD620CT, NRVBD620VCT, SBRV620CT Series Switch-mode Power Rectifiers www.onsemi.com DPAK−3 Surface Mount Package SCHOTTKY BARRIER These state−of−the−art devices are designed for use in switching RECTIFIERS power supplies, inverters and as free wheeling diodes. 6.0 AMPERES, 20 − 60 VOLTS Features • Extremely Fast Switching • Extremely Low Forward Drop • Platinum Barrier with Avalanche Guardrings • NRVBD and SBRV Prefixes for Automotive and Other Applications DPAK Requiring Unique Site and Control Change Requirements; CASE 369C AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant 1 4 Mechanical Characteristics: 3 • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) MARKING DIAGRAM • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: AYWW 260°C Max. for 10 Seconds B • 6x0TG ESD Ratings: ♦ Machine Model = C ♦ Human Body Model = 3B A = Assembly Location* Y = Year WW = Work Week B6x0T = Device Code x = 2, 3, 4, 5, or 6 G = Pb−Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2017 − Rev. 14 MBRD620CT/D

MBRD620CT, NRVBD620VCT, SBRV620CT Series MAXIMUM RATINGS MBRD/NRVBD/SBRV Rating Symbol 620CT 630CT 640CT 650CT 660CT Unit Peak Repetitive Reverse Voltage VRRM 20 30 40 50 60 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Average Rectified Forward Current IF(AV) A TC = 130°C (Rated VR) Per Diode 3 Per Device 6 Peak Repetitive Forward Current, IFRM A TC = 130°C (Rated VR, Square Wave, 20 kHz) Per Diode 6 Nonrepetitive Peak Surge Current − (Surge applied at rated load IFSM 75 A conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2 (cid:2)s, 1 kHz) IRRM 1 A Operating Junction Temperature (Note 1) TJ −65 to +175 °C Storage Temperature Tstg −65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/(cid:2)s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/R(cid:3)JA. THERMAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case R(cid:3)JC 6 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Note 2) R(cid:3)JA 80 °C/W 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS PER DIODE Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) VF V iF = 3 Amps, TC = 25°C 0.7 iF = 3 Amps, TC = 125°C 0.65 iF = 6 Amps, TC = 25°C 0.9 iF = 6 Amps, TC = 125°C 0.85 Maximum Instantaneous Reverse Current (Note 3) iR mA (Rated dc Voltage, TC = 25°C) 0.1 (Rated dc Voltage, TC = 125°C) 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 (cid:2)s, Duty Cycle ≤ 2.0%. www.onsemi.com 2

MBRD620CT, NRVBD620VCT, SBRV620CT Series TYPICAL CHARACTERISTICS 100 1000 70 100 TJ = 175°C mA) 150°C 50 NT ( 10 125°C E R 1.0 R 30 U C 75°C SE 0.1 20 R E V E 0.01 MPS) , RR T (A 10 I 0.001 25°C N E R 7.0 0.0001 UR 0 10 20 30 40 50 60 70 C D 5.0 VR, REVERSE VOLTAGE (VOLTS) R A *The curves shown are typical for the highest voltage device in the W R 175°C voltage grouping. Typical reverse current for lower voltage selections O 3.0 S F can be estimated from these curves if VR is sufficient below rated VR. U EO 2.0 150°C Figure 2. Typical Reverse Current,* Per Leg N TA S) 14 TAN 125°C ATT 13 SINE S W , INF 1.0 ON ( 1112 10 5 WAVE i TI 0.7 A 10 P SSI 9.0 IPK/IAV = 20 0.5 DI 8.0 R E 7.0 OW 6.0 SQUARE 0.3 E P 5.0 dc WAVE G 0.2 75°C ERA 43..00 TJ = 150°C V TC = 25°C , AAV) 21..00 0.1 F( 0 P 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage, Per Leg Figure 3. Average Power Dissipation, Per Leg www.onsemi.com 3

MBRD620CT, NRVBD620VCT, SBRV620CT Series TYPICAL CHARACTERISTICS 8.0 PS) RATED VOLTAGE APPLIED M A 7.0 T ( R(cid:3)JC = 6°C/W N E 6.0 RR TJ = 150°C CU 5.0 D SINE R A 4.0 WAVE W R OR dc O F 3.0 SQUARE GE WAVE A 2.0 R E V , A 1.0 V) A F( 0 I 80 90 100 110 120 130 140 150 160 TC, CASE TEMPERATURE (°C) Figure 4. Current Derating, Case, Per Leg MPS) 4.0 TJ = 150°C R(cid:3)JA = 80°C/W A 3.5 SURFACE MOUNTED ON MIN. T ( PAD SIZE RECOMMENDED N E 3.0 R R dc U D C 2.5 SQUARE WAVE WAR 2.0 VR = 25 V SINEO WRAVE R O F 1.5 GE VR = 60 V RA 1.0 E V , A 0.5 V) A F( 0 I 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Ambient, Per Leg 1 K F) p E ( C TAN 100 TJ = 25°C CI A P A C C, 10 0 10 20 30 40 50 60 70 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Capacitance, Per Leg www.onsemi.com 4

MBRD620CT, NRVBD620VCT, SBRV620CT Series ORDERING INFORMATION Device Package Shipping† MBRD620CTT4G 2500 / Tape & Reel MBRD630CTT4G 2500 / Tape & Reel MBRD640CTG 75 Units / Rail NRVBD640CTG* 75 Units / Rail NRVBD640CTG−VF01* 75 Units / Rail MBRD640CTT4G 2500 / Tape & Reel NRVBD640CTT4G* 2500 / Tape & Reel NRVBD640VCTT4G* 2500 / Tape & Reel SBRV640VCTT4G* 2500 / Tape & Reel MBRD650CTG 75 Units / Rail MBRD650CTT4G 2500 / Tape & Reel DPAK NRVBD650CTG−VF01* 2500 / Tape & Reel (Pb−Free) NRVBD650CTT4G* 2500 / Tape & Reel NRVBD650CTT4G−VF01* 2500 / Tape & Reel MBRD660CTG 75 Units / Rail NRVBD660CTG* 75 Units / Rail NRVBD660CTG−VF01* 75 Units / Rail MBRD660CTRLG 1800 / Tape & Reel NRVBD660CTRLG* 1800 / Tape & Reel MBRD660CTT4G 2500 / Tape & Reel NRVBD660CTT4G* 2500 / Tape & Reel SBRV660VCTT4G* 2500 / Tape & Reel SNRVBD660CTT4G* 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRVBD and SBRV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5

MBRD620CT, NRVBD620VCT, SBRV620CT Series PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: A 1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. E C 2.CONTROLLING DIMENSION: INCHES. A 3.THERMAL PAD CONTOUR OPTIONAL WITHIN DI- b3 B MENSIONS b3, L3 and Z. c2 4.DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL 4 NOT EXCEED 0.006 INCHES PER SIDE. L3 Z 5.DIMENSIONS D AND E ARE DETERMINED AT THE D DETAIL A H 6.DOAUTTUEMRSM OA SATN EDX BT RAERME EDSE OTEFR TMHIEN EPDLA ASTT DICA TBUOMDY. 1 2 3 PLANE H. 7.OPTIONAL MOLD FEATURE. L4 INCHES MILLIMETERS NOTE 7 b2 c BOTTOM VIEW DIM MIN MAX MIN MAX A 0.086 0.094 2.18 2.38 e SIDE VIEW A1 0.000 0.005 0.00 0.13 b b 0.025 0.035 0.63 0.89 0.005 (0.13) M C b2 0.028 0.045 0.72 1.14 TOP VIEW b3 0.180 0.215 4.57 5.46 c 0.018 0.024 0.46 0.61 c2 0.018 0.024 0.46 0.61 H Z Z D 0.235 0.245 5.97 6.22 E 0.250 0.265 6.35 6.73 e 0.090 BSC 2.29 BSC L2 GPLAAUNGEE C SPELAATNIENG H 0.370 0.410 9.40 10.41 L 0.055 0.070 1.40 1.78 L1 0.114 REF 2.90 REF L2 0.020 BSC 0.51 BSC L A1 BOTTOM VIEW L3 0.035 0.050 0.89 1.27 L1 ALTERNATE L4 −−− 0.040 −−− 1.01 CONSTRUCTIONS Z 0.155 −−− 3.93 −−− DETAIL A ROTATED 90(cid:2) CW SOLDERING FOOTPRINT* 6.20 3.00 0.244 0.118 2.58 0.102 5.80 1.60 6.17 0.228 0.063 0.243 (cid:2) (cid:3) mm SCALE 3:1 inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ◊ www.onsemi.com MBRD620CT/D 6

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: MBRD640CTG SBR640CTT4G SBR660CTT4G MBRD620CTT4G MBRD630CTT4G MBRD640CTT4G MBRD650CTG MBRD650CTT4G MBRD660CTG MBRD660CTRLG MBRD660CTT4G NRVBD640CTG NRVBD650CTG NRVBD660CTRLG