19-2929; Rev 0; 8/03 EVAALVUAAILTAIOBNL EKIT 1200MHz to 2500MHz Adjustable RF Predistorter General Description Features M The MAX2009 adjustable RF predistorter is designed to ♦ Up to 12dB ACPR Improvement* A improve power amplifier (PA) adjacent-channel power ♦ Independent Gain and Phase Expansion Controls X rejection (ACPR) by introducing gain and phase expan- sion in a PA chain to compensate for the PA’s gain and ♦ Gain Expansion Up to 7dB 2 phase compression. With its +23dBm maximum input ♦ Phase Expansion Up to 24° 0 power level and wide adjustable range, the MAX2009 ♦ 1200MHz to 2500MHz Frequency Range 0 can provide up to 12dB of ACPR improvement for ♦ Exceptional Gain and Phase Flatness 9 power amplifiers operating in the 1200MHz to 2500MHz frequency band. Lower frequencies of operation can be ♦ Group Delay <1.3ns (Gain and Phase Sections achieved with this IC’s counterpart, the MAX2010. Combined) The MAX2009 is unique in that it provides up to 7dB of ♦ ±0.04ns Group Delay Ripple Over a 100MHz Band gain expansion and 24° of phase expansion as the ♦ Capable of Handling Input Drives Up to +23dBm input power is increased. The amount of expansion is ♦ On-Chip Temperature Variation Compensation configurable through two independent sets of control: one set adjusts the gain expansion breakpoint ♦ Single +5V Supply and slope, while the second set controls the same ♦ Low Power Consumption: 75mW (typ) parameters for phase. With these settings in place, the ♦ Fully Integrated into Small 28-Pin Thin QFN linearization circuit can be run in either a static set-and- Package forget mode, or a more sophisticated closed-loop *Performance dependent on amplifier, bias, and modulation. implementation can be employed with real-time soft- ware-controlled distortion correction. Hybrid correction Ordering Information modes are also possible using simple lookup tables to compensate for factors such as PA temperature drift PART TEMP RANGE PIN-PACKAGE or PA loading. MAX2009ETI-T -40°C to +85°C 28 Thin QFN-EP* The MAX2009 comes in a 28-pin thin QFN exposed *EP = Exposed paddle. pad (EP) package (5mm x 5mm) and is specified for the extended (-40°C to +85°C) temperature range. Functional Diagram/ Applications Pin Configuration WCDMA/UMTS, cdma2000, DCS1800, and PCS1900 Base Stations ND* UTG ND* CS FS BP ND* G O G G G G G Feed-Forward PA Architectures 28 27 26 25 24 23 22 Digital Baseband Predistortion Architectures GND* 1 21 VCCG Military Applications GAIN GND* 2 CONTROL 20 GND* WLAN Applications ING 3 19 PBRAW GND* 4 18 PBEXP MAX2009 GND* 5 17 PBIN OUTP 6 PHASE 16 GND* CONTROL GND* 7 15 VCCP 8 9 10 11 12 13 14 D* NP D* S1 S2 S1 S2 GN I GN PF PF DC DC P P *INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE. ________________________________________________________________Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.

1200MHz to 2500MHz Adjustable RF Predistorter 9 ABSOLUTE MAXIMUM RATINGS 0 VCCG, VCCPto GND..............................................-0.3V to +5.5V Continuous Power Dissipation (TA= +70°C) 0 ING, OUTG, GCS, GFS, GBP to GND......-0.3V to (VCCG+ 0.3V) 28-Pin Thin QFN-EP INP, OUTP, PFS_, PDCS_, PBRAW, (derate 21mW/°C above +70°C)...............................1667mW 2 PBEXP, PBIN to GND............................-0.3V to (VCCP+ 0.3V) Operating Temperature Range...........................-40°C to +85°C X Input (ING, INP, OUTP, OUTG) Level............................+23dBm Junction Temperature......................................................+150°C PBEXP Output Current........................................................±1mA Storage Temperature Range.............................-65°C to +150°C A Lead Temperature (soldering 10s)..................................+300°C M Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS (MAX2009 EV kit; VCCG= VCCP= +4.75V to +5.25V; no RF signal applied; INP, ING, OUTP, OUTG are AC-coupled and terminated to 50Ω; VPF_S1= open; PBEXP shorted to PBRAW; VPDCS1= VPDCS2= 0.8V; VPBIN= VGBP= VGCS= GND; VGFS= VCCG; TA= -40°C to +85°C. Typical values are at VCCG= VCCP= +5.0V, TA= +25°C, unless otherwise noted.) PARAMETER CONDITIONS MIN TYP MAX UNITS Supply Voltage VCCG, VCCP 4.75 5.25 V VCCP 5.8 7 Supply Current mA VCCG 10 12.1 PBIN, PBRAW 0 VCCP Analog Input Voltage Range V GBP, GFS, GCS 0 VCCG VGFS = VGCS = VPBRAW = 0V -2 +2 Analog Input Current VGBP = 0 to +5V -100 +170 µA VPBIN = 0 to +5V -100 +220 Logic-Input High Voltage PDCS1, PDCS2 (Note 1) 2.0 V Logic-Input Low Voltage PDCS1, PDCS2 (Note 1) 0.8 V Logic Input Current -2 +2 µA 2 _______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter AC ELECTRICAL CHARACTERISTICS M (MAX2009 EV kit, VCCG = VCCP = +4.75V to +5.25V, 50Ω environment, PIN = -20dBm, fIN = 1200MHz to 2500MHz, VGCS = +1.0V, A VGFS= +5.0V, VGBP= +1.2V, VPBIN= VPDCS1= VPDCS2= 0V, VPF_S1= +5V, VPBRAW= VPBEXP, TA= -40°C to +85°C. Typical values are at fIN= 2140MHz, VCCG= VCCP= +5V, TA= +25°C, unless otherwise noted.) (Notes 1, 2) X 2 PARAMETER CONDITIONS MIN TYP MAX UNITS 0 Operating Frequency Range 1200 2500 MHz 0 VSWR ING, INP, OUTG, OUTP 1.3:1 9 PHASE CONTROL SECTION Nominal Gain -7.5 dB Gain Variation Over Temperature TA = -40°C to +85°C -1.4 dB Gain Flatness Over a 100MHz band ±0.1 dB Phase-Expansion Breakpoint VPBIN = +5V 23 dBm Maximum Phase-Expansion Breakpoint VPBIN = 0V 3.7 dBm Minimum Phase-Expansion Breakpoint TA = -40°C to +85°C ±1.3 dB Variation Over Temperature VPF_S1 = +5V, VPDCS1 = VPDCS2 = 0V, 23.7 PIN = -20 dBm to +23 dBm VPDCS1 = 5V, VPDCS2 = 0V, VPF_S1 = +1.5V 14.2 Phase Expansion Degrees VPDCS1 = 0V, VPDCS2 = 5V, VPF_S1 = +1.5V 9.2 VPF_S1 = 0V, VPDCS1 = VPDCS2 = +5V, 7.6 PIN = -20dBm to +23dBm Phase-Expansion Slope Degrees PIN = +15dBm 1.2 Maximum /dB VPF_S1 = 0V, VPDCS1 = VPDCS2 = +5V, Degrees Phase-Expansion Slope Minimum 0.4 PIN = +15dBm /dB Phase Slope Variation Over Degrees PIN = +15dBm, TA = -40°C to +85°C -0.1 Temperature /dB Phase Ripple Over a 100MHz band, deviation from linear phase ±0.15 Degrees Noise Figure 7.5 dB Absolute Group Delay Interconnects de-embedded 0.7 ns Group Delay Ripple Over a 100MHz band ±0.03 ns Parasitic Gain Expansion PIN = -20dBm to +23dBm 0.9 dB _______________________________________________________________________________________ 3

1200MHz to 2500MHz Adjustable RF Predistorter 9 AC ELECTRICAL CHARACTERISTICS (continued) 0 (MAX2009 EV kit, VCCG = VCCP = +4.75V to +5.25V, 50Ω environment, PIN = -20dBm, fIN = 1200MHz to 2500MHz, VGCS = +1.0V, 0 VGFS= +5.0V, VGBP= +1.2V, VPBIN= VPDCS1= VPDCS2= 0V, VPF_S1= +5V, VPBRAW= VPBEXP, TA= -40°C to +85°C. Typical values 2 are at fIN= 2140MHz, VCCG= VCCP= +5V, TA= +25°C, unless otherwise noted.) (Notes 1, 2) X PARAMETER CONDITIONS MIN TYP MAX UNITS A GAIN CONTROL SECTION M -16 Nominal Gain VGCS = 0V, VGFS = +5V -23 dB VGCS = +5V, VGFS = 0V -8.5 Gain Variation Over Temperature TA = -40°C to +85°C -1 dB Gain Flatness Over a 100MHz band ±0.3 dB Gain-Expansion Breakpoint VGBP = +5V 23 dBm Maximum Gain-Expansion Breakpoint VGBP = +0.5V -3 dBm Minimum Gain-Expansion Breakpoint TA = -40°C to +85°C -0.3 dB Variation Over Temperature VGFS = +5V, PIN = -20dBm to +23dBm 6.6 Gain Expansion dB VGFS = 0V, PIN = -20dBm to +23dBm 3.6 VGFS = +5V, PIN = +15dBm 0.5 Gain-Expansion Slope dB/dB VGFS = +0V, PIN = +15dBm 0.26 Gain Slope Variation Over PIN = +15dBm, TA = -40°C to +85°C -0.04 dB/dB Temperature Noise Figure 16 dB Absolute Group Delay Interconnects de-embedded 0.61 ns Group Delay Ripple Over a 100MHz band ±0.01 ns Phase Ripple Over a 100MHz band, deviation from linear phase ±0.07 Degrees Parasitic Phase Expansion PIN = -20dBm to +23dBm 5 Degrees Note 1: Guaranteed by design and characterization. Note 2: All limits reflect losses and characteristics of external components shown in the Typical Application Circuit, unless otherwise noted. 4 _______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter Typical Operating Characteristics M Phase Control Section A (MAX2009 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 2140MHz, TA= +25°C, X unless otherwise noted.) 2 SUPPLY CURRENT SMALL-SIGNAL INPUT RETURN LOSS SMALL-SIGNAL OUTPUT RETURN LOSS 0 vs. SUPPLY VOLTAGE vs. FREQUENCY vs. FREQUENCY 0 6.3 0 0 SUPPLY CURRENT (mA) 55555666........65789012 TA = +85°C TA = +T2A5 =° C-40°C MAX2009TOC01 INPUT RETURN LOSS (dB) 23112550050 D CA MAX2009TOC02 OUTPUT RETURN LOSS (dB) 23112550050 D B C MAX2009TOC03 9 A 35 35 5.4 B 5.3 40 40 4.75 4.85 4.95 5.05 5.15 5.25 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 SUPPLY VOLTAGE (V) FREQUENCY (GHz) FREQUENCY (GHz) A = VPDCS1 = VPDCS2 = VPF_S1 = 0V A = VPDCS1 = VPDCS2 = VPF_S1 = 0V B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V D = VPDCS1 = VPDCS2 = VPF_S1 = 5V D = VPDCS1 = VPDCS2 = VPF_S1 = 5V LARGE-SIGNAL INPUT RETURN LOSS LARGE-SIGNAL OUTPUT RETURN LOSS SMALL-SIGNAL GAIN vs. FREQUENCY vs. FREQUENCY vs. FREQUENCY 50 PIN = +15dBm C MAX2009TOC04 50 PIN = +15dBm MAX2009TOC05 ---565...500 TA = -40°C MAX2009TOC06 INPUT RETURN LOSS (dB) 2311250050 D OUTPUT RETURN LOSS (dB) 2311250050 D B C GAIN (dB) ------897867......505050 TA = +25°CTA = +85°C A 35 B A 35 -9.5 40 40 -10.0 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) A = VPDCS1 = VPDCS2 = VPF_S1 = 0V A = VPDCS1 = VPDCS2 = VPF_S1 = 0V B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V D = VPDCS1 = VPDCS2 = VPF_S1 = 5V D = VPDCS1 = VPDCS2 = VPF_S1 = 5V _______________________________________________________________________________________ 5

1200MHz to 2500MHz Adjustable RF Predistorter 9 Typical Operating Characteristics (continued) 0 Phase Control Section (continued) 0 (MAX2009 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 2140MHz, TA= +25°C, 2 unless otherwise noted.) X A SMALL-SIGNAL GAIN SMALL-SIGNAL GAIN SMALL-SIGNAL GAIN vs. FREQUENCY vs. COARSE SLOPE vs. COARSE SLOPE M ---565...500 VCCP = 4.75V, 5.0V, 5.25V MAX2009TOC07 --65..05 MAX2009TOC08 --65..05 TA = -40°C MAX2009TOC09 -6.5 GAIN (dB) ---787...500 GAIN (dB)--67..50 VPF_S1 = 1.5V VPF_S1 = 5V GAIN (dB)--67..50 TA = +25°C -8.5 TA = +85°C -9.0 -7.5 -7.5 -9.5 VPF_S1 = 0V -10.0 -8.0 -8.0 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 PDCS1 = 0, PDCS1 = 5, PDCS1 = 0, PDCS1 = 5, PDCS1 = 0, PDCS1 = 5, PDCS1 = 0, PDCS1 = 5, FREQUENCY (GHz) PDCS2 = 0 PDCS2 = 0 PDCS2 = 5 PDCS2 = 5 PDCS2 = 0 PDCS2 = 0 PDCS2 = 5 PDCS2 = 5 COARSE SLOPE (V) COARSE SLOPE (V) GROUP DELAY vs. FREQUENCY NOISE FIGURE vs. FREQUENCY SUPPLY CURRENT vs. INPUT POWER 00..8805 D MAX2009TOC10 899...505 MAX2009TOC11 56..9050 MAX2009TOC12 DELAY (ns)000...776505 A SE FIGURE (dB) 877...050 B A D LY CURRENT (mA)55..9805 CB A 0.60 B NOI 6.5 SUPP5.80 D 6.0 0.55 5.5 C 5.75 E C 0.50 5.0 5.70 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.5 1.7 1.9 2.1 2.3 2.5 0 4 8 12 16 20 24 FREQUENCY (GHz) FREQUENCY (GHz) INPUT POWER (dBm) A = VPDCS1 = VPDCS2 = VPF_S1 = 0V A = VPDCS1 = VPDCS2 = VPF_S1 = 0V A = VPBIN = 0V D = VPBIN = 1.5V B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V B = VPDCS1 = VPDCS2 = 0V, VPF_S1 = 5V B = VPBIN = 0.5V E = VPBIN = 3.0V C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V C = VPDCS1 = VPDCS2 = 5V, VPF_S1 = 0V C = VPBIN = 1.0V D = VPDCS1 = VPDCS2 = VPF_S1 = 5V D = VPDCS1 = VPDCS2 = VPF_S1 = 5V INTERCONNECTS DE-EMBEDDED 6 _______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter Typical Operating Characteristics (continued) M Phase Control Section (continued) A (MAX2009 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 2140MHz, TA= +25°C, X unless otherwise noted.) 2 0 GAIN EXPANSION vs. INPUT POWER PHASE EXPANSION vs. INPUT POWER GAIN EXPANSION vs. INPUT POWER 0 ---666...240 MAX2009TOC13 119800 C MAX2009TOC14 ---666...240 D MAX2009TOC15 9 -6.6 F E D ES) B -6.6 GAIN (dB)--76..08 SE (DEGRE 170 A GAIN (dB)--76..08 C HA D -7.2 P -7.2 B -7.4 C 160 -7.4 B E A -7.6 F -7.6 A -7.8 150 -7.8 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 INPUT POWER (dBm) INPUT POWER (dBm) INPUT POWER (dBm) A = VPBIN = 0V D = VPBIN = 1.5V A = VPBIN = 0V D = VPBIN = 1.5V A = VPDCS1 = VPDCS2 = 0V C = VPDCS1 = 0V, VPDCS2 = 5V B = VPBIN = 0.5V E = VPBIN = 2.0V B = VPBIN = 0.5V E = VPBIN = 2.0V B = VPDCS1 = 5V, VPDCS2 = 0V D = VPDCS1 = VPDCS2 = 5V C = VPBIN = 1.0V F = VPBIN = 2.5V C = VPBIN = 1.0V F = VPBIN = 2.5V GAIN EXPANSION vs. INPUT POWER PHASE EXPANSION vs. INPUT POWER PHASE EXPANSION vs. INPUT POWER ---666...240 E D MAX2009TOC16 119800 F MAX2009TOC17 119800 A MAX2009TOC18 GAIN (dB)----6767....6082 B C PHASE (DEGREES) 170 D E PHASE (DEGREES) 170 B A 160 160 -7.4 C F C -7.6 B D A -7.8 150 150 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 INPUT POWER (dBm) INPUT POWER (dBm) INPUT POWER (dBm) A = VPF_S1 = 0V E = VPF_S1 = 2.0V A = VPF_S1 = 0V D = VPF_S1 = 1.5V A = VPDCS1 = VPDCS2 = 0V C = VPDCS1 = 0V, VPDCS2 = 5V B = VPF_S1 = 0.5V F = VPF_S1 = 5.0V B = VPF_S1 = 0.5V E = VPF_S1 = 2.0V B = VPDCS1 = 5V, VPDCS2 = 0V D = VPDCS1 = VPDCS2 = 5V C = VPF_S1 = 1.0V VPDCS1 = 5.0V C = VPF_S1 = 1.0V F = VPF_S1 = 5.0V D = VPF_S1 = 1.5V VPDCS1 = 5.0V _______________________________________________________________________________________ 7

1200MHz to 2500MHz Adjustable RF Predistorter 9 Typical Operating Characteristics (continued) 0 Phase Control Section (continued) 0 (MAX2009 EV kit, VCCP= +5.0V, PIN= -20dBm, VPBIN= 0V, VPF_S1 = +5.0V, VPDCS1= VPDCS2= 0V, fIN= 2140MHz, TA= +25°C, 2 unless otherwise noted.) X A GAIN EXPANSION vs. INPUT POWER PHASE EXPANSION vs. INPUT POWER M --55..83 VPDCS1 = 5.0, VPF_S1 = 1.5V MAX2009TOC19 117850 VPDCS1 = 5.0, VPF_S1 = 1.5V MAX2009TOC20 TA = -40°C S) 170 E N (dB)-6.3 DEGRE 165 GAI-6.8 TA = +25°C HASE ( P 160 TA = -40°C -7.3 155 TA = +25°C TA = +85°C TA = +85°C -7.8 150 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 INPUT POWER (dBm) INPUT POWER (dBm) Typical Operating Characteristics Gain Control Section (MAX2009 EV kit, VCCG= +5.0V, PIN= -20dBm, VGBP= +1.2V, VGFS= +5.0V, VGCS= +1.0V, fIN= 2140MHz, TA= +25°C, unless otherwise noted.) SMALL-SIGNAL INPUT RETURN LOSS SMALL-SIGNAL OUTPUT RETURN LOSS SUPPLY CURRENT vs. SUPPLY VOLTAGE vs. FREQUENCY vs. FREQUENCY SUPPLY CURRENT (mA) 888999......486204 TA = +85°C TA = +25°C MAX2009TOC21 INPUT RETURN LOSS (dB) 322115000505 DACB MAX2009TOC22 OUTPUT RETURN LOSS (dB) 322115000505 DA BC MAX2009TOC23 8.2 TA = -40°C 35 35 8.0 40 40 4.75 4.85 4.95 5.05 5.15 5.25 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 SUPPLY VOLTAGE (V) FREQUENCY (GHz) FREQUENCY (GHz) A = VGCS = 0V, VGFS = 0V C = VGCS = 5V, VGFS = 0V A = VGCS = 0V, VGFS = 0V C = VGCS = 5V, VGFS = 0V B = VGCS = 0V, VGFS = 5V D = VGCS = 5V, VGFS = 5V B = VGCS = 0V, VGFS = 5V D = VGCS = 5V, VGFS = 5V 8 _______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter Typical Operating Characteristics (continued) M Gain Control Section (continued) A (MAX2009 EV kit, VCCG= +5.0V, PIN= -20dBm, VGBP= +1.2V, VGFS= +5.0V, VGCS= +1.0V, fIN= 2140MHz, TA= +25°C, unless X otherwise noted.) 2 LARGE-SIGNAL INPUT RETURN LOSS LARGE-SIGNAL OUTPUT RETURN LOSS 0 vs. FREQUENCY vs. FREQUENCY SMALL-SIGNAL GAIN vs. FREQUENCY 0 INPUT RETURN LOSS (dB) 322115000505 PIN = +15dBm C D MAX2009TOC24 OUTPUT RETURN LOSS (dB) 322115000505 PIN = +15dBm C D MAX2009TOC25 GAIN (dB) -------11111118674352 TTAA == -+4805°°CC TA = +25°C MAX2009TOC26 9 A B A B 35 35 -19 40 40 -20 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) A = VGCS = 0V, VGFS = 0V C = VGCS = 5V, VGFS = 0V A = VGCS = 0V, VGFS = 0V C = VGCS = 5V, VGFS = 0V B = VGCS = 0V, VGFS = 5V D = VGCS = 5V, VGFS = 5V B = VGCS = 0V, VGFS = 5V D = VGCS = 5V, VGFS = 5V SMALL-SIGNAL GAIN vs. FREQUENCY SMALL-SIGNAL GAIN vs. VGCS SMALL-SIGNAL GAIN vs. VGCS ---111432 VCCG = 4.75V, 5.0V, 5.25V MAX2009TOC27 -1--971 VGFS = 0V, 1.5V, 5.0V MAX2009TOC28 -1--917 MAX2009TOC29 GAIN (dB) --1165 GAIN (dB) ---111735 GAIN (dB) ---111735 TA = +25T°AC = -40°C TA = +85°C -17 -19 -19 -18 -21 -21 -19 -23 -23 -20 -25 -25 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 0 1 2 3 4 5 0 1 2 3 4 5 FREQUENCY (GHz) VGCS (V) VGCS (V) _______________________________________________________________________________________ 9

1200MHz to 2500MHz Adjustable RF Predistorter 9 Typical Operating Characteristics (continued) 0 Gain Control Section (continued) 0 (MAX2009 EV kit, VCCG= +5.0V, PIN= -20dBm, VGBP= +1.2V, VGFS= +5.0V, VGCS= +1.0V, fIN= 2140MHz, TA= +25°C, unless 2 otherwise noted.) X A GROUP DELAY vs. FREQUENCY NOISE FIGURE vs. FREQUENCY SUPPLY CURRENT vs. INPUT POWER M 00..7705 MAX2009TOC30 222246 B MAX2009TOC31 2350 MAX2009TOC32 DELAY (ns)000...566550 A D C NOISE FIGURE (dB) 1121128064 C A UPPLY CURRENT (mA) 2105 B A C B E S E 10 10 0.50 D 8 D 0.45 6 5 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 1.5 1.7 1.9 2.1 2.3 2.5 0 4 8 12 16 20 24 FREQUENCY (GHz) FREQUENCY (GHz) INPUT POWER (dBm) A = VGCS = 0V, VGFS = 0V C = VGCS = 5V, VGFS = 0V A = VGCS = 0V, VGFS = 0V D = VGCS = 5V, VGFS = 0V A = VGBP = 0V D = VGBP = 1.5V B = VGCS = 0V, VGFS = 5V D = VGCS = 5V, VGFS = 5V B = VGCS = 0V, VGFS = 5V E = VGCS = 5V, VGFS = 5V B = VGBP = 0.5V E = VGBP = 3.0V INTERCONNECTS DE-EMBEDDED C = VGCS = 1.5V, VGFS = 5V C = VGBP = 1.0V GAIN EXPANSION vs. INPUT POWER PHASE EXPANSION vs. INPUT POWER --97 A MAX2009TOC33 118900 MAX2009TOC34 -11 N (dB) --1135 B C D DEGREES)116700 A B C D GAI -17 E F G H PHASE (150 -19 140 -21 H G F E -23 130 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 INPUT POWER (dBm) INPUT POWER (dBm) A = VGBP = 0V E = VGBP = 2.0V A = VGBP = 0V E = VGBP = 2.0V B = VGBP = 0.5V F = VGBP = 2.5V B = VGBP = 0.5V F = VGBP = 2.5V C = VGBP = 1.0V G = VGBP = 3.5V C = VGBP = 1.0V G = VGBP = 3.5V D = VGBP = 1.5V H = VGBP = 5.0V D = VGBP = 1.5V H = VGBP = 5.0V 10 ______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter Typical Operating Characteristics (continued) M Gain Control Section (continued) A (MAX2009 EV kit, VCCG= +5.0V, PIN= -20dBm, VGBP= +1.2V, VGFS= +5.0V, VGCS= +1.0V, fIN= 2140MHz, TA= +25°C, unless X otherwise noted.) 2 0 GAIN EXPANSION vs. INPUT POWER GAIN EXPANSION vs. INPUT POWER PHASE EXPANSION vs. INPUT POWER --97 F E MAX2009TOC35 --97 E F MAX2009TOC36 118900 MAX2009TOC37 09 -11 -11 A, B GAIN (dB) --1135 C DA, B GAIN (dB) --1135 D C SE (DEGREES)116700 C -17 -17 A, B PHA150 D E -19 -19 140 -21 -21 F -23 -23 130 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 INPUT POWER (dBm) INPUT POWER (dBm) INPUT POWER (dBm) A = VGFS = 0V D = VGFS = 1.5V A = VGCS = 0V D = VGCS = 1.5V A = VGCS = 0V D = VGCS = 1.5V B = VGFS = 0.5V E = VGFS = 2.0V B = VGCS = 0.5V E = VGCS = 2.0V B = VGCS = 0.5V E = VGCS = 2.0V C = VGFS = 1.0V F = VGFS = 5.0V C = VGCS = 1.0V F = VGCS = 2.5V C = VGCS = 1.0V F = VGCS = 2.5V PHASE EXPANSION vs. INPUT POWER GAIN EXPANSION vs. INPUT POWER PHASE EXPANSION vs. INPUT POWER 118900 MAX2009TOC38 -1--980 TA = -40°C MAX2009TOC39 111556680 MAX2009TOC40 154 PHASE (DEGREES)111657000 F E GAIN (dB) ----11114132 TA = +25°C TA = +85°C PHASE (DEGREES)111144558620 TTAA == +-4205°°CC 140 A, B C D -15 144 TA = +85°C -16 142 130 -17 140 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 -7 -2 3 8 13 18 23 INPUT POWER (dBm) INPUT POWER (dBm) INPUT POWER (dBm) A = VGFS = 0V D = VGFS = 1.5V B = VGFS = 0.5V E = VGFS = 2.0V C = VGFS = 1.0V F = VGFS = 5.0V ______________________________________________________________________________________ 11

1200MHz to 2500MHz Adjustable RF Predistorter 9 Pin Description 0 PIN NAME FUNCTION 0 2 1, 2, 4, 5, 7, X 8, 10, 16, 20, GND Ground. Internally connected to the exposed paddle. 22, 26, 28 A RF Gain Input. Connect ING to a coupling capacitor if it is not connected to OUTP. ING is M 3 ING interchangeable with OUTG. RF Phase Output. Connect OUTP to a coupling capacitor if it is not connected to INP. OUTP is 6 OUTP interchangeable with INP. 9 INP RF Phase Input. Connect INP to a coupling capacitor. This pin is interchangeable with OUTP. 11 PFS1 Fine Phase-Slope Control Input 1. See the Typical Application Circuit. 12 PFS2 Fine Phase-Slope Control Input 2. See the Typical Application Circuit. 13 PDCS1 Digital Coarse Phase-Slope Control Range Input 1. Set to logical zero for the steepest slope. 14 PDCS2 Digital Coarse Phase-Slope Control Range Input 2. Set to logical zero for the steepest slope. Phase-Control Supply Voltage. Bypass with a 0.01µF capacitor to ground as close to the device as 15 VCCP possible. Phase section can operate without VCCG. 17 PBIN Phase Breakpoint Control Input 18 PBEXP Phase Expansion Output. Connect PBEXP to PBRAW to use PBIN as the breakpoint control voltage. 19 PBRAW Uncompensated Phase Breakpoint Input Gain-Control Supply Voltage. Bypass with a 0.01µF capacitor to ground as close to the device as 21 VCCG possible. Gain section can operate without VCCP. 23 GBP Gain Breakpoint Control Input 24 GFS Fine Gain-Slope Control Input 25 GCS Coarse Gain-Slope Control Input 27 OUTG RF Gain Output. Connect OUTG to a coupling capacitor. OUTG is interchangeable with ING. EP GND Exposed Ground Paddle. Solder EP to the ground plane. Detailed Description points can be set over a 20dB input power range. The phase expansion slope is variable from 0.3°/dB to The MAX2009 adjustable predistorter can provide up to 2.0°/dB and can be adjusted for a maximum of 24° of 12dB of ACPR improvement for high-power amplifiers by phase expansion. The gain expansion slope is variable introducing gain and phase expansion to compensate from 0.1dB/dB to 0.6dB/dB and can be adjusted for a for the PA’s gain and phase compression. The MAX2009 maximum of 7dB gain expansion. enables real-time software-controlled distortion correc- tion, as well as set-and-forget tuning through the adjust- The following sections describe the tuning methodology ment of the expansion starting point (breakpoint) and the best implemented with a class A amplifier. Other classes rate of expansion (slope). The gain and phase break- of operation may require significantly different settings. 12 ______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter Phase Expansion Circuitry the PFS1 and PFS2 pins perform the task of fine tuning M Figure 1 shows a typical PA’s phase behavior with the phase expansion slope. Since off-chip varactor respect to input power. For input powers less than the diodes are recommended for this function, they must A breakpoint level, the phase remains relatively constant. be closely matched and identically biased. A minimum X As the input power becomes greater than the break- effective capacitance of 2pF to 6pF is required to 2 point level, the phase begins to compress and deterio- achieve the full phase slope range as specified in the rate the power amplifier’s linearity. To compensate for Electrical Characteristics tables. 0 this AM-PM distortion, the MAX2009 provides phase 0 As shown in Figure 2, the varactors connected to PFS1 expansion, which occurs at the same breakpoint level and PFS2 are in series with three internal capacitors on 9 but with the opposite slope. The overall result is a flat each pin. By connecting and disconnecting these inter- phase response. nal capacitors, a larger change in phase expansion Phase Expansion Breakpoint slope can be achieved through the logic levels present- The phase expansion breakpoint is typically controlled ed at the PDCS1 and PDCS2 pins. The phase expan- by a digital-to-analog converter (DAC) connected sion slope is at its maximum when both VPDCS1 and through the PBIN pin. The PBIN input voltage range of VPDCS2 equal 0V. The phase tuning has a minimal 0V to VCC corresponds to a breakpoint input power effect on the small-signal gain. range of 3.7dBm to 23dBm. To achieve optimal perfor- Gain Expansion Circuitry mance, the phase expansion breakpoint of the In addition to phase compression, the PA also suffers MAX2009 must be set to equal the phase compression from gain compression (AM-AM) distortion, as shown in breakpoint of the PA. Figure 3. The PA gain curve remains flat for input pow- Phase Expansion Slope ers below the breakpoint level, and begins to compress The phase expansion slope of the MAX2009 must also at a given rate (slope) for input powers greater than the be adjusted to equal the opposite slope of the PA’s breakpoint level. To compensate for such gain com- phase compression curve. The phase expansion slope pression, the MAX2009 generates a gain expansion, of the MAX2009 is controlled by the PFS1, PFS2, PDCS1, which occurs at the same breakpoint level with the and PDCS2 pins. With pins PFS1 and PFS2, AC-coupled opposite slope. The overall result is a flat gain response and connected to a variable capacitor or varactor diode, at the PA output. PA PHASE MAX2009 IMPROVED COMPRESSION PHASE EXPANSION PHASE DISTORTION BREAKPOINT PA PHASE (DEGREES) SLOPE AX2009 PHASE (DEGREES) MBINED PHASE (DEGREES) M O C PIN (dBm) PIN (dBm) PIN (dBm) Figure 1. PA Phase Compression Canceled by MAX2009 Phase Expansion ______________________________________________________________________________________ 13

1200MHz to 2500MHz Adjustable RF Predistorter 9 0 0 2 PFS1 X A M PF_S1 PHASE-CONTROL CIRCUITRY PFS2 2 PDCS1 SWITCH CONTROL MAX2009 PDCS2 Figure 2. Simplified Phase Slope Internal Circuitry PA GAIN MAX2009 IMPROVED COMPRESSION GAIN EXPANSION GAIN DISTORTION BREAKPOINT PA GAIN (dB) SLOPE AX2009 GAIN (dB) MBINED GAIN (dB) M O C PIN (dBm) PIN (dBm) PIN (dBm) Figure 3. PA Gain Compression Canceled by MAX2009 Gain Expansion 14 ______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter Gain Expansion Breakpoint Applications Information M The gain expansion breakpoint is usually controlled by a The following section describes the tuning methodology DAC connected through the GBP pin. The GBP input A best implemented with a class A amplifier. Other classes voltage range of 0.5V to 5V corresponds to a breakpoint X of operation may require significantly different settings. input power range of 3dBm to 23dBm. To achieve the 2 optimal performance, the gain expansion breakpoint of Gain and Phase Expansion Optimization the MAX2009 must be set to equal the gain compres- The best approach to improve the ACPR of a PA is to 0 sion point of the PA. The GBP control has a minimal first optimize the AM-PM response of the phase sec- 0 effect on the small-signal gain when operated from 0.5V tion. For most high-frequency LDMOS amplifiers, 9 to 5V. improving the AM-PM response provides the bulk of the ACPR improvement. Figure 4 shows a typical configu- Gain Expansion Slope ration of the phase tuning circuit. A power sweep on a In addition to properly setting the breakpoint, the gain network analyzer allows quick real-time tuning of the expansion slope of the MAX2009 must also be adjusted AM-PM response. First, tune PBIN to achieve the phase to compensate for the PA’s gain compression. The expansion starting point (breakpoint) at the same point slope should be set using the following equation: where the PA’s phase compression begins. Next, use −PA_SLOPE control pins PF_S1, PDCS1, and PDCS2 to obtain the MAX2009_SLOPE= 1+PA_SLOPE optimal AM-PM response. The typical values for these pins are shown in Figure 4. where: To further improve the ACPR, connect the phase out- MAX2009_SLOPE = MAX2009 gain section’s slope in put to the gain input through a preamplifier. The pre- dB/dB. amplifier is used to compensate for the high insertion PA_SLOPE = PA’s gain slope in dB/dB, a negative loss of the gain section. Figure 5 shows a typical appli- number for compressive behavior. cation circuit of the MAX2009 with the phase section cascaded to the gain section for further ACPR opti- To modify the gain expansion slope, two adjustments mization. Similar to tuning the phase section, first tune must be made to the biases applied on pins GCS and the gain expansion breakpoint through the GBP pin GFS. Both GCS and GFS have an input voltage range of and adjust for the desired gain expansion with pins 0V to VCC, corresponding to a slope of approximately GCS and GFS. To minimize the effect of GCS on the 0.1dB/dB to 0.6dB/dB. The slope is set to maximum parasitic phase response, minimize the control voltage when VGCS= 0V and VGFS= +5V, and the slope is at its to around 1V. Some retuning of the AM-PM response minimum when VGCS= +5V and VGFS= 0V. may be necessary. Unlike the GBP pin, modifying the gain expansion slope bias on the GCS pin causes a change in the part’s inser- Layout Considerations tion loss and noise figure. For example, a smaller slope A properly designed PC board is an essential part of caused by GCS results in a better insertion loss and any high-frequency circuit. To minimize external com- lower noise figure. The GFS does not affect the insertion ponents, the PC board can be designed to incorporate loss. It can provide up to -30% or +30% total slope varia- small values of inductance and capacitance to optimize tion around the nominal slope set by GCS. the input and output VSWR (refer to the MAX2009). The Large amounts of GCS bias adjustment can also lead to phase section’s PFS1 and PFS2 pins are sensitive to an undesired (or residual) phase expansion/compres- external parasitics. Minimize trace lengths and keep sion behavior. There exists an optimal bias voltage that varactor diodes close to the pins. Remove the ground minimizes this parasitic behavior (typically GCS = 1.0V). plane underneath the traces can further help reduce Control voltages higher than the optimal result in para- the parasitic capacitance. For best performance, route sitic phase expansion, lower control voltages result in the ground pin traces directly to the grounded EP phase compression. GFS does not contribute to the underneath the package. Solder the EP on the bottom phase behavior and is preferred for slope control. of the device package evenly to the board ground plane to provide a heat transfer path along with signal grounding. ______________________________________________________________________________________ 15

1200MHz to 2500MHz Adjustable RF Predistorter 9 POWER 0 AMPLIFIER 0 2 X POUT = 7dBm 6 3 A OUTP ING M MAX2009 PREAMPLIFIER 9 INP OUTG 27 PIN = 14dBm 11 PFS1 GBP 23 VPF_S1 = 1.5V 12 PFS2 PHASE GAIN CONTROL CONTROL GFS 24 19 PBRAW 18 PBEXP PBIN PDCS1 PDCS2 GCS 17 13 14 25 VPBIN = 0.8V VPDCS1 = 0V VPDCS2 = 5V Figure 4. AM-PM Response Tuning Circuit Power-Supply Bypassing Table 1. Suggested Components of Bypass each VCCpin with a 0.01µF capacitor. Typical Application Circuit Exposed Pad RF The exposed paddle (EP) of the MAX2009’s 28-pin thin DESIGNATION VALUE TYPE QFN-EP package provides a low inductance path to C1, C6, C8, C10 8.2pF ±0.25pF 0402 ceramic capacitors ground. It is important that the EP be soldered to the ground plane on the PC board, either directly or C2, C3 1.5pF ±0.1pF 0402 ceramic capacitors through an array of plated via holes. C4, C5 0.01µF ±10% 0603 ceramic capacitors C7, C9 0.5pF ±0.1pF 0402 ceramic capacitors R1, R2 1kΩ ±5% 0402 resistors Skyworks Hyperabrupt varactor VR1, VR2 SMV1232-079 diodes 16 ______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter M PREAMPLIFIER A X GAIN = 7dB 2 6 3 0 OUTP ING 0 MAX2009 9 POWER AMPLIFIER PREAMPLIFIER 9 INP OUTG 27 PIN = 14dBm 11 PFS1 GBP 23 VPF_S1 = 1.5V 12 PFS2 PHASE GAIN CONTROL CONTROL GFS 24 19 PBRAW 18 PBEXP PBIN PDCS1 PDCS2 GCS 17 13 14 25 VPBIN = 0.8V VGBP = 1V VPDCS1 = 0V VGFS = 1.5V VPDCS2 = 5V VGCS = 1V Figure 5. MAX2009 Phase and Gain Optimization Circuit ______________________________________________________________________________________ 17

1200MHz to 2500MHz Adjustable RF Predistorter 9 Typical Application Circuit 0 0 2 X W = 10 mils** A L = 160 mils C6 M C7 POWER AMPLIFER ND* UTG ND* CS FS BP ND* G O G G G G G 28 27 26 25 24 23 22 GND* VCCG OPTIONAL MATCH COMPENSATION* 1 21 GND* GAIN GND* C5 W = 10 mils** 2 CONTROL 20 L = 160 mils C8 ING PBRAW 3 19 C9 GND* PBEXP 4 18 MAX2009 GND* PBIN CONTROL 5 17 UNIT C10 OUTP GND* 6 PHASE 16 CONTROL PREAMPLIFER GND* 7 15 VCCP C4 8 9 10 11 12 13 14 D* NP D* S1 S2 S1 S2 GN I GN PF PF DC DC P P C2 C3 C1 R2 PREAMPLIFER *INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE. **FR4 0.015in THICK DIELECTRIC. R1 VR1 VR2 Chip Information TRANSISTOR COUNT: Bipolar: 160 CMOS: 240 PROCESS: BiCMOS 18 ______________________________________________________________________________________

1200MHz to 2500MHz Adjustable RF Predistorter Package Information M (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information A go to www.maxim-ic.com/packages.) X S P E 2 N. HI 0 T N 0 F Q 9 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________19 © 2003 Maxim Integrated Products is a registered trademark of Maxim Integrated Products.

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