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  • 型号: MAC16MG
  • 制造商: ON Semiconductor
  • 库位|库存: xxxx|xxxx
  • 要求:
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MAC16MG产品简介:

ICGOO电子元器件商城为您提供MAC16MG由ON Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 MAC16MG价格参考¥11.78-¥14.51。ON SemiconductorMAC16MG封装/规格:晶闸管 - TRIAC, TRIAC Standard 600V 16A Through Hole TO-220AB。您可以下载MAC16MG参考资料、Datasheet数据手册功能说明书,资料中有MAC16MG 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRIAC 600V 16A TO220AB双向可控硅 双向可控硅

产品分类

双向可控硅分离式半导体

GateTriggerCurrent-Igt

50 mA

GateTriggerVoltage-Vgt

1.5 V

品牌

ON Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体闸流管,双向可控硅,ON Semiconductor MAC16MG-

数据手册

点击此处下载产品Datasheet

产品型号

MAC16MG

PCN设计/规格

点击此处下载产品Datasheet

三端双向可控硅类型

标准

不重复通态电流

150 A

产品目录页面

点击此处下载产品Datasheet

产品种类

双向可控硅

供应商器件封装

TO-220AB

保持电流Ih最大值

50 mA

关闭状态漏泄电流(在VDRMIDRM下)

0.01 mA

其它名称

MAC16MGOS

包装

管件

商标

ON Semiconductor

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

工厂包装数量

50

开启状态电压

1.6 V

最大工作温度

+ 125 C

最大转折电流IBO

150 A

最小工作温度

- 40 C

栅极触发电压-Vgt

1.5 V

栅极触发电流-Igt

50 mA

标准包装

50

电压-断态

600V

电压-栅极触发(Vgt)(最大值)

1.5V

电流-不重复浪涌50、60Hz(Itsm)

150A @ 60Hz

电流-保持(Ih)(最大值)

50mA

电流-栅极触发(Igt)(最大值)

50mA

电流-通态(It(RMS))(最大值)

16A

系列

MAC16M

配置

单一

零件号别名

MAC16HCNG

额定重复关闭状态电压VDRM

600 V

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PDF Datasheet 数据手册内容提取

Thyristors Surface Mount – 400V - 800V > MAC16 Series MAC16DG, MAC16MG, MAC16NG Pb Description Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 • Minimizes Snubber Volts Networks for Protection • On−State Current Rating • Industry Standard TO−220 of 16 Amperes RMS at Package 80°C • High Commutating di/ • Uniform Gate Trigger dt − 9.0 A/ms minimum at Currents in Three 125°C Quadrants • These Devices are • High Immunity to dv/ Pb−Free and are RoHS dt − 500 V/µs minimum at Compliant 125°C Pin Out Functional Diagram MT2 MT1 G Additional Information CASE 221A STYLE 4 1 2 Datasheet Resources Samples © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/19/19

Thyristors Surface Mount – 400V - 800V > MAC16 Series Maximum Ratings (T = 25°C unless otherwise noted) J Rating Symbol Value Unit MAC16D 400 Peak Repetitive Off−State Voltage (Note 1) V , MAC16M DRM 600 V (− 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) V MAC16N RRM 800 On-State RMS Current (Full Cycle Sine Wave, 50 to 60 Hz, T = 80°C) I 16 A C T (RMS) Peak Non-Repetitive Surge Current I 150 A (One Full Cycle Sine Wave, 60 Hz, T= 125°C) TSM C Circuit Fusing Consideration (t = 8.3 ms) I2t 93 A²sec Peak Gate Power (T = +80°C, Pulse Width = 1.0 µs) P 20 W C GM Average Gate Power (t = 8.3 ms, T = 80°C) P 0.5 W C G(AV) Operating Junction Temperature Range T -40 to +125 °C J Storage Temperature Range T -40 to +125 °C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Junction−to−Case (AC) R 2.0 Thermal Resistance, ƟJC °C/W Junction−to−Ambient R 62.5 ƟJA Maximum Lead Temperature for Soldering Purposes, 1/8” from case for T 260 °C 10 seconds L Electrical Characteristics - OFF (T = 25°C unless otherwise noted ; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current T = 25°C I , - - 0.01 J DRM mA (VD = VDRM = VRRM; Gate Open) TJ = 125°C IRRM - - 2.0 Electrical Characteristics - ON (T = 25°C unless otherwise noted; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak On−State Voltage (Note 2) (I = ±21 A Peak) V − 1.2 1.6 V TM TM MT2(+), G(+) 10 16 50 Gate Trigger Current (Continuous dc) MT2(+), G(−) I 10 18 50 mA GT (V = 12 V, R = 100 Ω) D L MT2(−), G(−) 10 22 50 MT2(+), G(+) 0.5 0.75 1.5 Gate Trigger Voltage (Continuous dc) MT2(+), G(−) V 0.5 0.72 1.5 V GT (V = 12 V, R = 100 Ω) D L MT2(−), G(−) 0.5 0.82 1.5 MT2(+), G(+) − 33 50 Latching Current MT2(+), G(−) V − 36 80 V (V = 24 V, I = 35 mA) GD D G MT2(−), G(−) − 33 50 Holding Current (V = 12 V , Gate Open, Initiating Current = ±200 mA)) I – 20 50 mA D dc H Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/19/19

Thyristors Surface Mount – 400V - 800V > MAC16 Series Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Rate of Change of Commutating Current, See Figure 10. (VD = 400 V, ITM = 6.0 A, (di/dt)c 9.0 − − A/ms Commutating dv/dt = 24 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) Critical Rate of Rise of Off-State Voltage dv/dt 600 − − V/µs (V = Rated V , Exponential Waveform, Gate Open, T = 125°C) D DRM J Voltage Current Characteristic of SCR Symbol Parameter V Peak Repetitive Forward Off State Voltage +Current DRM I Peak Forward Blocking Current DRM Quadrant 1 V Peak Repetitive Reverse Off State Voltage MainTerminal 2 + RRM VTM I Peak Reverse Blocking Current RRM on state VTM Maximum On State Voltage IH I Holding Current IRRM at VRRM H off state +Voltage Quadrant Definitions for a Triac IH IDRM at VDRM Quadrant 3 MT2 POSITIVE MainTerminal 2 VTM (Positive Half Cycle) + (+) MT2 (+) MT2 QuadrantII ( ) IGT (+) IGT QuadrantI GATE GATE MT1 MT1 REF REF IGT +IGT ( ) MT2 ( ) MT2 QuadrantIII ( ) IGT (+) IGT QuadrantIV GATE GATE MT1 MT1 REF REF MT2 NEGA TIVE (Negative Half Cycle) All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants I and III are used © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/19/19

Thyristors Surface Mount – 400V - 800V > MAC16 Series Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation Figure 3. On−State Characteristics Figure 4. Thermal Response D) E Z ALI 1 M R O N ( E C N A T S SI E L R 0.1 A M R E H T T N E SI N A r(t), TR0.010.1 1 10t, TIME (ms1)00 1000 4 Figure 5. Hold Current Variation 40 A) m NT ( MT2 POSITIVE E R R U C D L O MT2 NEGATIVE H , H I 5 TJ, JUNCTION TEMPERATURE ϒ(C) © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/19/19

Thyristors Surface Mount – 400V - 800V > MAC16 Series Figure 6. Typical Holding Current vs Junction Temperature Figure 7. Gate Trigger Voltage vs Junction Temperature 100 1 mA) OLT) RVDL == 11020 V NT ( Q2 Q3 E (V E G I, GATE TRIGGER CURRGT Q1 RVDL == 11020 V V, GATE TRIGGER VOLTAGT Q1Q2 Q3 1 0.5 TJ, JUNCTION TEMPERATURE ϒ(C) TJ, JUNCTION TEMPERATURE ϒ(C) Figure 8. Critical Rate of Rise of Off−State Voltage Figure 9. Critical Rate of Rise of Commutating Voltage (Exponential) ) V/sμ (5000 100 VD = 800 Vpk F 4K TJ = 125°C E O) RISV/sμ OF (GE 3K ATE OLTA TJ = 125°C 100°C 75°C 2K , CRITICAL RMUTATING V 10 ITM f =1 1K (dv/dt)cCOM VDRMtw (di2/d twtc) =61f0 IT0M0 0 1 10 100 1000 10000 10 20 30 40 50 60 70 80 90 100 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) (di/dtc), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c LL 1N4007 200 VRMS ADJUST FOR MEASURE ITM, 60 Hz VAC I CHARGE TRIGGER CCOHNATRRGOEL NTROL - 200 V O + C R MT2 GGE 1N91451 RI MT1 T G CL Note: Component values are for verification of rated (dti/)dc. See AN1048 for additional information. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/19/19

Thyristors Surface Mount – 400V - 800V > MAC16 Series Dimensions Part Marking System 4 SEATING PLANE B F C T S 4 MAC16xG Q A YMAXX TO 220AB 12 3 U 1 CASE 221A 2 H 3 STYLE 12 K Z x =D, M or N Y =Year L R M =Month A =Assembly Site V J XX=Lot Serial Code G =Pb-Free Package G D N Inches Millimeters Pin Assignment Dim Min Max Min Max 1 Main Terminal 1 A 0.590 0.620 14.99 15.75 2 Main Terminal 2 B 0.380 0.420 9.65 10.67 3 Gate C 0.178 0.188 4.52 4.78 4 No Connection D 0.025 0.035 0.64 0.89 F 0.142 0.147 3.61 3.73 Ordering Information G 0.095 0.105 2.41 2.67 H 0.110 0.130 2.79 3.30 Device Package Shipping J 0.018 0.024 0.46 0.61 MAC16DG TO-220 K 0.540 0.575 13.72 14.61 MAC16MG 500 Units/ Rail (Pb-Free) L 0.060 0.075 1.52 1.91 MAC16NG N 0.195 0.205 4.95 5.21 Q 0.105 0.115 2.67 2.92 R 0.085 0.095 2.16 2.41 S 0.045 0.060 1.14 1.52 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. © 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/19/19