M1MA141KT1G, M1MA142KT1G Single Silicon Switching Diode ThisSiliconEpitaxialPlanarDiodeisdesignedforuseinultrahigh speed switching applications. This device is housed in the SC--70 http://onsemi.com packagewhichisdesignedforlowpowersurfacemountapplications. CATHODE Features 3  Fastt ,<3.0ns rr  LowC ,<2.0pF D  TheseDevicesarePb--Free,HalogenFree/BFRFreeandareRoHS Compliant ANODE NOCONNECTION MAXIMUMRATINGS(TA=25C) 1 2 Rating Symbol Value Unit ReverseVoltage VR Vdc 3 M1MA141KT1 40 SC--70(SOT--323) M1MA142KT1 80 CASE419 PeakReverseVoltage VRM Vdc 1 2 STYLE2 M1MA141KT1 40 M1MA142KT1 80 ForwardCurrent IF 100 mAdc MARKINGDIAGRAM PeakForwardCurrent IFM 225 mAdc PeakForwardSurgeCurrent IFSM 500 mAdc (Note1) MxMG G THERMALCHARACTERISTICS Rating Symbol Max Unit PowerDissipation PD 150 mW Mx =DeviceCode x= Hfor141 JunctionTemperature TJ 150 C Ifor142 M =DateCode* StorageTemperature Tstg --55~+150 C G =Pb--FreePackage Stresses exceeding Maximum Ratings may damage the device. Maximum (Note:Microdotmaybeineitherlocation) Ratingsarestressratingsonly.FunctionaloperationabovetheRecommended *Date Code orientation may vary depending upon OperatingConditionsisnotimplied.Extendedexposuretostressesabovethe manufacturinglocation. RecommendedOperatingConditionsmayaffectdevicereliability. 1. t=1sec ORDERINGINFORMATION Device Package Shipping† M1MA141KT1G SC--70 3000/Tape&Reel (Pb--Free) M1MA142KT1G SC--70 3000/Tape&Reel (Pb--Free) †Forinformationontapeandreelspecifications, includingpartorientationandtapesizes,please refertoourTapeandReelPackagingSpecifications Brochure,BRD8011/D.  SemiconductorComponentsIndustries,LLC,2010 1 PublicationOrderNumber: October,2010--Rev.7 M1MA141KT1/D

M1MA141KT1G, M1MA142KT1G ELECTRICALCHARACTERISTICS(TA=25C) Characteristic Condition Symbol Min Max Unit ReverseVoltageLeakageCurrent IR -- 0.1 mAdc M1MA141KT1 VR=35V M1MA142KT1 VR=75V ForwardVoltage IF=100mA VF -- 1.2 Vdc ReverseBreakdownVoltage IR=100mA VR -- Vdc M1MA141KT1 40 M1MA142KT1 80 DiodeCapacitance VR=0,f=1.0MHz CD -- 2.0 pF ReverseRecoveryTime(Figure1) IF=10mA,VR=6.0V, trr -- 3.0 ns RL=100Ω,Irr=0.1IR (Note2) 2. trrTestCircuit http://onsemi.com 2

M1MA141KT1G, M1MA142KT1G RECOVERYTIMEEQUIVALENTTESTCIRCUIT INPUTPULSE OUTPUTPULSE tr tp trr IF t t 10% RL A Irr=0.1IR 90% IF=10mA VR tp=2ms VRRL==160V0Ω tr=0.35ns Figure1.RecoveryTimeEquivalentTestCircuit 100 10 TA=150C NT(mA) 10 TA=85C ENT(A) 1.0 TA=125C E R URR TA=--40C CUR TA=85C C E 0.1 D S R R ORWA 1.0 TA=25C REVE TA=55C F ,R0.01 ,F I I TA=25C 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 VF,FORWARDVOLTAGE(VOLTS) VR,REVERSEVOLTAGE(VOLTS) Figure2.ForwardVoltage Figure3.ReverseCurrent 0.68 F) (p 0.64 E C N A T CI PA 0.6 A C E D O DI ,D 0.56 C 0.52 0 2 4 6 8 VR,REVERSEVOLTAGE(VOLTS) Figure4.DiodeCapacitance http://onsemi.com 3

M1MA141KT1G, M1MA142KT1G PACKAGEDIMENSIONS SC--70(SOT--323) CASE419--04 ISSUEN D NOTES: 1. DIMENSIONINGANDTOLERANCINGPERANSIY14.5M,1982. e1 2. CONTROLLINGDIMENSION:INCH. MILLIMETERS INCHES 3 DIM MIN NOM MAX MIN NOM MAX A 0.80 0.90 1.00 0.032 0.035 0.040 HE E A1 0.00 0.05 0.10 0.000 0.002 0.004 1 2 A2 0.70REF 0.028REF b 0.30 0.35 0.40 0.012 0.014 0.016 c 0.10 0.18 0.25 0.004 0.007 0.010 D 1.80 2.10 2.20 0.071 0.083 0.087 b E 1.15 1.24 1.35 0.045 0.049 0.053 e 1.20 1.30 1.40 0.047 0.051 0.055 e e1 0.65BSC 0.026BSC L 0.20 0.38 0.56 0.008 0.015 0.022 HE 2.00 2.10 2.40 0.079 0.083 0.095 STYLE2: A A2 c PIN1.ANODE 2.N.C. 3.CATHODE 0.05(0.002) L A1 SOLDERINGFOOTPRINT* 0.65 0.65 0.025 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE10:1  mm  inches *ForadditionalinformationonourPb--Freestrategyandsoldering details,pleasedownloadtheONSemiconductorSolderingand MountingTechniquesReferenceManual,SOLDERRM/D. ONSemiconductorand areregisteredtrademarksofSemiconductorComponentsIndustries,LLC(SCILLC).SCILLCreservestherighttomakechangeswithoutfurthernotice toanyproductsherein.SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticularpurpose,nordoesSCILLCassumeanyliability arisingoutoftheapplicationoruseofanyproductorcircuit,andspecificallydisclaimsanyandallliability,includingwithoutlimitationspecial,consequentialorincidentaldamages. “Typical”parameterswhichmaybeprovidedinSCILLCdatasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. All operatingparameters,including“Typicals”mustbevalidatedforeachcustomerapplicationbycustomer’stechnicalexperts. SCILLCdoesnotconveyanylicenseunderitspatent rightsnortherightsofothers. SCILLCproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody,orother applicationsintendedtosupportorsustainlife,orforanyotherapplicationinwhichthefailureoftheSCILLCproductcouldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruseSCILLCproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdSCILLCanditsofficers,employees,subsidiaries, affiliates,anddistributorsharmlessagainstallclaims,costs,damages,andexpenses,andreasonableattorneyfeesarisingoutof,directlyorindirectly,anyclaimofpersonalinjury ordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatSCILLCwasnegligentregardingthedesignormanufactureofthepart. SCILLCisan EqualOpportunity/AffirmativeActionEmployer. Thisliteratureissubjecttoallapplicablecopyrightlawsandisnotforresaleinanymanner. PUBLICATIONORDERINGINFORMATION LITERATUREFULFILLMENT: N.AmericanTechnicalSupport:800--282--9855TollFree ONSemiconductorWebsite:www.onsemi.com LiteratureDistributionCenterforONSemiconductor USA/Canada P.O.Box5163,Denver,Colorado80217USA Europe,MiddleEastandAfricaTechnicalSupport: OrderLiterature:http://www.onsemi.com/orderlit Phone:303--675--2175or800--344--3860TollFreeUSA/Canada Phone:421337902910 Fax:303--675--2176or800--344--3867TollFreeUSA/Canada JapanCustomerFocusCenter Foradditionalinformation,pleasecontactyourlocal Email:orderlit@onsemi.com Phone:81--3--5773--3850 SalesRepresentative http://onsemi.com M1MA141KT1/D 4