IXBOD1 Breakover Diode Gen1 V = 600-1000 V BO I = 0.9 A (BOD1) AVM V BO Standard Types [V] 600 ±50 IXBOD1-06 700 ±50 IXBOD1-07 800 ±50 IXBOD1-08 900 ±50 IXBOD1-09 1000 ±50 IXBOD1-10 Backside: isolated A K Features / Advantages: Applications: Package: FP-Case • Very low forward voltage drop • High voltage circuit protection • Industry standard outline • Low leakage current • Transient voltage protection • RoHS compliant • Trigger device • Epoxy meets UL 94V-0 • Power pulse generators • Soldering pins for PCB mounting • Lightning and arcing protection • Base plate: Plastic overmolded tab • Energy discharge circuits • Reduced weight • Battery overvoltage protection • Solar array protection IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed 20130822a © 2013 IXYS All rights reserved 1 - 5

IXBOD1 BOD1 Ratings Symbol Defi nitions Conditions min. typ. max. I drain current V = 0.8·V T = 125°C 20 µA D D BO VJ V breakover voltage V (T ) = V [1 + K (T - 25°C)] V BO BO VJ BO, 25°C T VJ I RMS current f = 50 Hz T = 50°C 1.4 A RMS amb pins soldered to printed circuit (conductor 0.035x2mm) I maximum average forward current 0.9 A FAVM I maximum pulsed source current t = 0.1 ms; non repetitive T = 50°C 200 A SM p amb I2t I2t value for fusing t = 0.1 ms T = 50°C 2 A2s p amb K temperature coeffi cient of V 2·10-3 K-1 T BO K coeffi cient for energy per pulse EP (material constant) 700 K/Ws P R thermal resistance junction to ambient natural convection 60 K/W thJA with air speed 2 m/s 45 K/W I breakover current T = 25°C 15 mA BO VJ I holding current T = 25°C 30 mA H VJ V holding voltage T = 25°C 4 8 V H VJ (dv/dt) critical rate of rise of voltage V = 0.67·(V +100 V) T = 50°C 1000 V/µs cr D BO VJ (di/dt) critical rate of rise of curent V = V ; I = 80 A; f = 50 Hz T = 125°C 200 A/µs cr D BO T VJ t turn-off time V = 0.67·V ; V = 0 V; I = 80 A T = 125°C 150 µs q D BO R T VJ dv/dt = 200 V/µs; di/dt = -10 A/µs (lin.) V forward voltage drop I = 5 A T = 125°C 1.7 V T T VJ V threshold voltage 1.1 V T0 for power-loss calculation only T = 125°C r slope resistance VJ 0.12 Ω T IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed 20130822a © 2013 IXYS All rights reserved 2 - 5

IXBOD1 Package FP-Case Ratings Symbol Defi nitions Conditions min. typ. max. T ambient temperature (cooling medium) -40 125 °C amb T storage temperature -40 125 °C stg T maximum virtual junction temperature -40 125 °C VJM Weight 0.9 g Product Marking Logo PartNo. yywwA DateCode K A Assembly line Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard IXBOD1-06 IXBOD1-06 Box 100 467936 Standard IXBOD1-07 IXBOD1-07 Box 100 478873 Standard IXBOD1-08 IXBOD1-08 Box 100 467928 Standard IXBOD1-09 IXBOD1-09 Box 100 474940 Standard IXBOD1-10 IXBOD1-10 Box 100 467839 IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed 20130822a © 2013 IXYS All rights reserved 3 - 5

IXBOD1 Outlines FP-case 1.2 Dimensions in mm (1 mm = 0.0394“) 7.5 5 . 1 4 1 10 5 . 1 9 5 . 1 1 0.8 0.5 A K IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed 20130822a © 2013 IXYS All rights reserved 4 - 5

IXBOD1 Diode ITM = 200 A 160 10-1 120 80 60 40 10-2 20 E Fig. 1 Energy per pulse for trapezoidal current p 10 waveforms (see waveform definition) [Ws] 5 10-3 2 1 10-4 10-1 100 101 102 t [µs] p I = 200 A TM 10-1 160 120 80 60 40 10-2 Fig. 2 Energy per pulse for exponentially decaying 20 E current pulse (see waveform definition) p 10 [Ws] 10-3 5 2 1 10-4 10-1 100 101 102 t [µs] p 20 100 V = 0 m/s a 10 8 Va = 2 m/s 6 10 V Z T thJA 4 T = 125°C VJ [V] [K/W] T = 25°C 1 VJ 2 1 0.1 1 10 100 0.01 0.1 1 10 100 1000 I [A] t [s] T Fig. 3 On-state voltage Fig. 4 Transient thermal resistance IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specifi ed 20130822a © 2013 IXYS All rights reserved 5 - 5

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I XYS: IXBOD1-07 IXBOD1-08 IXBOD1-09 IXBOD1-10