MOSFET Metall Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOSTM E6 Power Transistor IPx65R600E6 Data Sheet Rev. 2.3, 2018-02-28 Power Management & Multimarket

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 Description CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features  Extremely low losses due to very low F O M R dson*Qg and E oss  Very high commutation ruggedness  Easy to use/drive  JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2) Applications PFC stages, hard switching PWM stages and resonant switching PWM stages e.g. PC Silverbox, Adapter, LCD & PDP TV, Lightning, Server, Telecom and UPS. Please note: For MOSFET paralleling the use o fferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit V @Tj 700 V DS max R 0.6 Ω DS(on), max Q 23 nC G, typ I 18 A D, pulse E @ 400V 2 µJ oss Body diode di/dt 500 A/µs Type / Ordering Code Package Marking Related links IPD65R600E6 PG-TO252 IFX CoolMOS Webpage IPP65R600E6 PG-TO220 65E6600 IFX Design tools IPA65R600E6 PG-TO220 FullPAK 1) J-STD20 and JESD22 2) For PG-TO252: non-Halogen free (OPN: IPD65R600E6BT); Halogen free (OPN: IPD65R600E6AT) Rev. 2.3 Page 2 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table of Contents 1 Description .......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 5 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 8 6 Test circuits ...................................................................................................................................... 13 7 Package outlines .............................................................................................................................. 14 8 Revision History ............................................................................................................................... 17 Rev. 2.3 Page 3 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 2 Maximum ratings At T = 25 °C, unless otherwise specified. j Table 2 Maximum ratings Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Continuous drain current 1) I – – 7.3 A T = 25°C D C – – 4.6 T = 100°C C Pulsed drain current 2) I – – 18 T = 25°C D, pulse C Averlanche energy, single pulse EAS – – 142 mJ ID = 1.3A; VDD = 50V; T = 25°C (see C Table 11) Averlanche energy, repetitive EAR – – 0.21 ID=1.3 A, VDD=50V Avalanche current, repetitive I – – 1.3 A AR MOSFET dv/dt ruggedness dv/dt – – 50 V/ns V =0…480 V DS Gate source voltage V -20 – 20 V static GS -30 30 AC (f >1 Hz) Power dissipation for P – – 63 W T = 25°C tot C Non FullPAK Power dissipation for P – – 28 W T = 25°C tot C FullPAK Operating and storage temperature T, T -55 – 150 °C j stg Mounting torque – – 60 Ncm M3 and M3.5 screws TO-220 Mounting torque – – 50 M2.5 Screws TO-220 FullPAK Continous diode forward current I – – 6.3 A T = 25°C S C Diode pulse current2) I – – 18 A T = 25°C S, pulsed C Reverse diode dv/dt3) dv/dt – – 15 V/ns V =0…480 V, I ≤ I , DS SD D Maxumum diode commutation dif/dt 500 A/µs TC = 125°C speed3) (see table 22) 1) Limited by T Maximum duty cycle D=0.75 j, max. 2) Pulse width t limited by T p j, max 3) Identical low side and high side switch with identical R G Rev. 2.3 Page 4 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 3 Thermal characteristics Table 3 Thermal characteristics TO-220 (IPP65R600E6) Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case R – – 2.0 °C/W thJC Thermal resistance, junction- R – – 62 leaded thJA ambient Soldering temperature, T – – 260 °C 1.6mm (0.063 in.) from sold wavesoldering only allowed at leads case for 10 s Table 4 Thermal characteristics TO-220 FullPAK (IPA65R600E6) Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case R – – 4.5 °C/W thJC Thermal resistance, junction- R – – 80 leaded thJA ambient Soldering temperature, T – – 260 °C 1.6mm (0.063 in.) from sold wavesoldering only allowed at leads case for 10 s Table 5 Thermal characteristics TO-252 (IPD65R600E6) Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Thermal resistance, junction-case R – – 2.0 °C/W thJC Thermal resistance, junction-ambient R – – 62 SMD version, device on thJA PCB, minimal footprint 35 SMD version, device on PCB, 6cm2 cooling area1) Soldering temperature, T – – 260 °C Reflow MSL1 sold wave- &reflowsoldering only allowed 1) Device on 40mm*40mm*1.5 epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without air stream cooling. Rev. 2.3 Page 5 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 4 Electrical characteristics Electrical characteristics, at T=25°C, unless otherwise specified j Table 6 Static characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Drain-source Breakdown voltage V 650 – – V V = 0V, I = 1.0mA (BR)DSS GS D Gate threshold voltage V 2.5 3 3.5 V = V , I = 0.21mA GS(th) DS GS D – – 1 µA V =600 V, V =0V, DS GS T=25°C j Zero gate Voltage drain current I DSS – 10 – V =600 V, V =0V, DS GS T=150°C j Gate- source leakage current I – – 100 nA V = 20V, V = 0V GSS GS DS – 0.54 0.6 Ω V = 10V, I =2.1A, GS D T= 25°C j Drain- source on- state resistance R DS(on) – 1.40 – V = 10V, I =2.1A, GS D T= 150°C j Gate resistance R – 10.5 – Ω f= 1MHz, open drain G Table7 Dynamic characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Input capacitance Ciss – 440 – pF VGS= 0V, VDS= 100V, Output capacitance C – 30 – f= 1MHz oss Effective output capacitance, C – 21 – V = 0V, o(er) GS energy related1) V =0…480V DS Effective output capacitance, C – 88 – I = const o(tr) D time related2) V = 0V, V =0…480 V GS DS Turn- on delay time td(on) – 10 – ns VDD=400 V Rise time t – 8 – V =13 V, I =3.2A, r GS D Turn- off delay time t – 64 – R = 6.8 Ω d(off) G Fall time t – 11 – (see table 20) f 1) C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS 2) C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS Rev. 2.3 Page 6 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 8 Gate charge characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Gate to source charge QGS – 2.75 – nC VDD= 480V, ID= 3.2A, Gate to drain charge Q – 12 – VGS=0 to 10 V GD Gate charge, total Q – 23 G Gate plateau voltage V – 5.5 – V plateau Table 8 Reverse diode characteristics Parameter Symbol Values Unit Note/Test Condition Min. Typ. Max. Diode forward voltage VSD – 0.9 – V VGS=0V, IF=3.2A, T=25°C j Reverse recovery time trr – 270 – ns VR=400 V, IF=3.2A, Reverse recovery charge Q – 2.0 – nC diF/d=100 A/µs rr t Peak reverse recovery current I – 13 – A (see table 22) rrm Rev. 2.3 Page 7 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 5 Electrical characteristics diagrams Table 10 Power dissipation Power dissipation Non FullPAK FULLPAK P = f(T ) P = f(T ) tot C tot C Table 11 Max. transient thermal impedance Max. transient thermal impedance Non FullPAK Non FullPAK Z =f(tp); parameter: D=t /T Z =f(tp); parameter: D=t /T (thJC) p (thJC) p Rev. 2.3 Page 8 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 12 Safe operating area T =25°C Safe operating area T =25°C C C Non FullPAK FullPAK I =f(V ); T =25°C; V > 7V; D=0; parameter t I =f(V ); T =25°C; V > 7V; D=0; parameter t D DS C GS p D DS C GS p Table 13 Safe operating area T =80°C Safe operating area T =80°C C C Non FullPAK FullPAK I =f(V ); T =80°C; V > 7V; D=0; parameter t I =f(V ); T =80°C; V > 7V; D=0; parameter t D DS C GS p D DS C GS p Rev. 2.3 Page 9 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 14 Typ. output characteristics T =25°C Typ. output characteristics T =125°C C C I =f(V ); T=25°C; parameter: V I =f(V ); T=125°C; parameter: V D DS j GS D DS j GS Table 15 Typ. drain-source on-state resistance Drain-source on-state resistance R =f(I ); T=125 °C; parameter: V R = f(T ; I =4.9A; V =10V DS(on) D j GS DS(on) j) D GS Rev. 2.3 Page 10 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 16 Typ. transfer characteristics Typ. gate charge I =f(V ); V =20V V =f(Q ), I =4.9 A pulsed D GS DS GS gate D Table 17 Avalanche energy Drain-source breakdown voltage E =f(T); I =1.8 A; V =50 V V =f(T); I =1.0 mA AS j D DD BR(DSS) j D Rev. 2.3 Page 11 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Table 18 Typ. capacitances Typ. C stored energy OSS C=f(V ); V = 0 V; f=1 MHz E =f(V ) DS GS OSS DS Table 19 Forward characteristics of reverse diode I = ƒ(V ); parameter: T F SD j Rev. 2.3 Page 12 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 6 Test circuits Table 20 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform V DS 90% V DS V GS 10% V GS td(on) tf td(off) tr ton toff Table 11 Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS I D VDS VD VDS VDS ID Table 22 Test circuit for diode characteristics Diode recovery waveform Rev. 2.3 Page 13 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 7 Package outlines Figure 1 Outlines TO-252,, dimensions in mm/inches Rev. 2.3 Page 14 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 Figure 2 Outlines TO220, dimensions in mm/inches Rev. 2.3 Page 15 2018-02-28

650V CoolMOSTM E6 Power Transistor IPD65R600E6, IPP65R600E6 IPA65R600E6 1 2 3 MILLIMETERS DIMENSIONS MIN. MAX. DOCUMENTNO. A 4.50 4.90 Z8B00003319 A1 2.34 2.85 A2 2.42 2.86 REVISION b 0.65 0.90 07 b1 0.95 1.38 b2 0.95 1.51 SCALE 5:1 b3 0.65 1.38 0 1 2 3 4 5mm b4 0.65 1.51 c 0.40 0.63 D 15.67 16.15 D1 8.97 9.83 EUROPEANPROJECTION E 10.00 10.65 e 2.54 H 28.70 29.75 L 12.78 13.75 L1 2.83 3.45 øP 3.00 3.30 ISSUEDATE Q 3.15 3.50 27.01.2017 Figure 3 Outlines TO220 FullPAK, dimensions in mm Rev. 2.3 Page 16 2018-02-28

RevisionHistory IPx65R600E6 Revision:2018-03-04,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2016-08-04 Revised TO220 Full PAK package drawing on page 16 2.3 2018-03-04 Outline PG-TO-220 FullPAK update TrademarksofInfineonTechnologiesAG AEIPSSUaROOsRILMyFIIPDAXAIC™RMFEIL™,O™ACN,S1,E™H6Ics6™,oo™PnP,orA,SiBmCCPReaKOIPn™DCPAG™,ACEiK-K,W™™T™aE,,,fMEeCPrcPIr™PoiFmnO,EoeMSTDS™™IUTPA,AA,CCtLQh™oKi™no™Q,l,GE,M™acPoNoR,dn™TOSoRPT,FECAAENCoCToC™KKlHM™™,SOP,,TRmSEOO™cyPo--d,nS™™CoIL,Po,™ToINMrl,SioC™REvoAaT,rleES™it™hiIcC,IeC.C™D™oR,o,RIlSVOEiEmCAR™Ln™3iT,™,uCen,OueRRp™eeEv,cCeO™rOSP,NaTFvTICGeRO™AOS™,L™S™,aO,,tHRpCItIRTiCMFO™OES,STSS™™AIEV,,GHOEEy™RbTI,rG™iDdAP,A™SAVIC,EPPK™MO™O,WD,SIEI™n-RPfi,nOCSeOLom™Dna™E,rt™DL,rE,BWlaIdSe™™,, TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 650VCoolMOSªE6PowerTransistor IPx65R600E6 17 Rev.2.3,2018-03-04

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