DPAK IPD50R280CE MOSFET 500VCoolMOSªCEPowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower tab MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand 2 offeringthebestcostdownperformanceratioavailableonthemarket. 1 3 Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness Drain •Easytouse/drive Pin 2 •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Gate Pin 1 Applications Source PFCstages,hardswitchingPWMstagesandresonantswitchingstages Pin 3 fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended Table1KeyPerformanceParameters Parameter Value Unit V @ T 550 V DS j,max R 0.28 W DS(on),max I 18.1 A D Q 32.6 nC g,typ I 42.9 A D,pulse E @ 400V 3.2 µJ oss Type/OrderingCode Package Marking RelatedLinks IPD50R280CE PG-TO 252 50S280CE see Appendix A Final Data Sheet 1 Rev.2.3,2016-06-13

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 500VCoolMOSªCEPowerTransistor IPD50R280CE Final Data Sheet 2 Rev.2.3,2016-06-13

1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Continuous drain current1) ID -- -- 1181..14 A TTCC == 2150°0C°C Pulsed drain current2) ID,pulse - - 42.9 A TC=25°C Avalanche energy, single pulse EAS - - 231 mJ ID =5.2A; VDD = 50V Avalanche energy, repetitive EAR - - 0.35 mJ ID =5.2A; VDD = 50V Avalanche current, repetitive IAR - - 5.2 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS --2300 -- 2300 V sAtCat i(cf>;1 Hz) PTOow-2e5r 2dissipation (non FullPAK) Ptot - - 119 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - Continuous diode forward current IS - - 12.8 A TC=25°C Diode pulse current2) IS,pulse - - 42.9 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VtcoDnSd<=20m..s.400V,ISD<=IS,Tj=25°C, Maximum diode commutation speed3) dif/dt - - 500 A/ms VtcoDnSd<=20m..s.400V,ISD<=IS,Tj=25°C, 2Thermalcharacteristics Table3Thermalcharacteristics(nonFullPAK)TO-252 Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 1.05 °C/W- Thermal resistance, junction - ambientRthJA - - 62 °C/Wleaded Sonollyd earlilnogw etedm apt eleraatdusre, wavesoldering Tsold - - 260 °C 1.6mm (0.063 in.) from case for 10s 500VCoolMOSªCEPowerTransistor 123))) LPViuDmClsliitneek =dw4 bi0dy0t hVT t;j pmV alixDm S<,ipt1ee5adk0< b°VCy(B ,T RM)j,DmaSaSxx;imiduemnt iDcaultylo Cwyscildee Da n=d 0h.5ighsideswitchwithidenticalRG IPD50R280CE Final Data Sheet 3 Rev.2.3,2016-06-13

3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 500 - - V VGS=0V,ID=1mA Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.35mA Zero gate voltage drain current IDSS -- -10 1- mA VVDDSS==550000VV,,VVGGSS==00VV,,TTjj==2155°0C°C Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) -- 00..2656 0-.28 W VVGGSS==1133VV,,IIDD==44..22AA,,TTjj==2155°0C°C Gate resistance RG - 3 - W f=1MHz,opendrain Table5Dynamiccharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Input capacitance Ciss - 773 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 49 - pF VGS=0V,VDS=100V,f=1MHz Ereflfaetcetdiv1e) output capacitance, energy Co(er) - 40 - pF VGS=0V,VDS=0...400V Ereflfaetcetdiv2e) output capacitance, time Co(tr) - 173 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 8 - ns VRDGD==34.40W0V,VGS=13V,ID=5.2A, Rise time tr - 6.4 - ns VRDGD==34.40W0V,VGS=13V,ID=5.2A, Turn-off delay time td(off) - 40 - ns VRDGD==34.40W0V,VGS=13V,ID=5.2A, Fall time tf - 7.6 - ns VRDGD==34.40W0V,VGS=13V,ID=5.2A, Table6Gatechargecharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Gate to source charge Qgs - 4.2 - nC VDD=400V,ID=5.2A,VGS=0to10V Gate to drain charge Qgd - 17.1 - nC VDD=400V,ID=5.2A,VGS=0to10V Gate charge total Qg - 32.6 - nC VDD=400V,ID=5.2A,VGS=0to10V Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=5.2A,VGS=0to10V 500VCoolMOSªCEPowerTransistor 12))CCoo((etrr))iissaaffiixxeeddccaappaacciittaanncceetthhaattggiivveesstthheessaammeecshtoarregdinegnteimrgeyaassCCoosssswwhhilieleVVDDSSisisrrisisininggfrfroomm00toto8800%%VV(B(BRR)D)DSSSS IPD50R280CE Final Data Sheet 4 Rev.2.3,2016-06-13

Table7Reversediodecharacteristics Parameter Symbol Min. VTyaplu.esMax. Unit Note/TestCondition Diode forward voltage VSD - 0.85 - V VGS=0V,IF=5.2A,Tf=25°C Reverse recovery time trr - 230 - ns VR=400V,IF=5.2A,diF/dt=100A/µs Reverse recovery charge Qrr - 2.2 - µC VR=400V,IF=5.2A,diF/dt=100A/µs Peak reverse recovery current Irrm - 17.5 - A VR=400V,IF=5.2A,diF/dt=100A/µs 500VCoolMOSªCEPowerTransistor IPD50R280CE Final Data Sheet 5 Rev.2.3,2016-06-13

4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation P[W]tot TC[°C] 500VCoolMOSªCEPowerTransistor IPD50R280CE Diagram2:Safeoperatingarea 102 120 110 1 µs 100 101 90 10 µs 80 100 µs 70 1 ms 60 [A]D 100 10 ms I 50 DC 40 30 10-1 20 10 0 10-2 0 40 80 120 160 100 101 102 103 V [V] DS P =f(T ) I =f(V );T =25°C;D=0;parameter:t tot C D DS C p Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 102 101 1 µs 101 10 µs 100 0.5 W] I[A]D 100 1 ms 11000 mµss Z[K/thJC 00..21 0.05 10-1 0.02 DC 10-1 0.01 single pulse 10-2 10-2 100 101 102 103 10-5 10-4 10-3 10-2 10-1 V [V] t [s] DS p I =f(V );T =80°C;D=0;parameter:t Z =f(t );parameter:D=t /T D DS C p thJC P p Final Data Sheet 6 Rev.2.3,2016-06-13

Typ.outputcharacteristicsTj=25°C I[A]D VDS[V] 500VCoolMOSªCEPowerTransistor IPD50R280CE Typ.outputcharacteristicsTj=125°C 60 35 30 20 V 50 10 V 20 V 25 40 10 V 8 V 8 V 20 A] 7 V 30 [D I 15 7 V 6 V 20 10 5.5 V 6 V 10 5.5 V 5 5 V 5 V 4.5 V 4.5 V 0 0 0 5 10 15 20 0 5 10 15 20 V [V] DS I =f(V );T=25°C;parameter:V I =f(V );T=125°C;parameter:V D DS j GS D DS j GS Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance 1.80 0.80 1.60 0.70 1.40 0.60 5.5 V 6.5 V 1.20 0.50 98% 5 V 6 V 7 V ] ] typ W[n) 1.00 W[n) 0.40 o 10 V o S( S( D D R R 0.80 0.30 0.60 0.20 0.40 0.10 0.20 0.00 0 10 20 30 40 -50 -25 0 25 50 75 100 125 150 175 I [A] T[°C] D j R =f(I );T=125°C;parameter:V R =f(T);I =4.2A;V =13V DS(on) D j GS DS(on) j D GS Final Data Sheet 7 Rev.2.3,2016-06-13

Typ.transfercharacteristics I[A]D VGS[V] 500VCoolMOSªCEPowerTransistor IPD50R280CE Typ.gatecharge 50 10 45 9 25 °C 40 8 120 V 35 7 400 V 30 6 V] 25 [S 5 G V 150 °C 20 4 15 3 10 2 5 1 0 0 0 2 4 6 8 10 0 10 20 30 40 Q [nC] gate I =f(V );V =20V;parameter:T V =f(Q );I =5.2Apulsed;parameter:V D GS DS j GS gate D DD Avalancheenergy Drain-sourcebreakdownvoltage 260 580 240 220 560 200 540 180 160 520 J] 140 V] [mAS 120 [DSS) E R( 500 B 100 V 80 480 60 40 460 20 0 440 0 25 50 75 100 125 150 175 -60 -20 20 60 100 140 180 T[°C] T[°C] j j E =f(T);I =5.2A;V =50V V =f(T);I =1mA AS j D DD BR(DSS) j D Final Data Sheet 8 Rev.2.3,2016-06-13

Typ.capacitances C[pF] VDS[V] 500VCoolMOSªCEPowerTransistor IPD50R280CE Typ.Cossstoredenergy 104 4.5 4.0 Ciss 3.5 103 3.0 J] 2.5 µ 102 Coss [ss Eo 2.0 1.5 101 Crss 1.0 0.5 100 0.0 0 100 200 300 400 500 0 100 200 300 400 500 V [V] DS C=f(V );V =0V;f=1MHz E =f(V ) DS GS oss DS Forwardcharacteristicsofreversediode 102 101 125 °C 25 °C A] [F I 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 V [V] SD I =f(V );parameter:T F SD j Final Data Sheet 9 Rev.2.3,2016-06-13

5TestCircuits Table8Diodecharacteristics Table9Switchingtimes 500VCoolMOSªCEPowerTransistor IPD50R280CE Test circuit for diode characteristics Diode recovery waveform V,I R 1 g V DS(peak) V DS V DS V t DS I rr F t t F S R 2 dI /dt g F I Table10Unclampedinductiveload F t QF QS 10%Irrm IF dIrr/dt t =t +t I rr F S rrm Q =Q +Q R 1 = R 2 rr F S g g Switching times test circuit for inductive load Switching times waveform V DS 90% V DS V GS 10% V GS td(on) tr td(off) tf ton toff Final Data Sheet 10 Rev.2.3,2016-06-13

6PackageOutlines 500VCoolMOSªCEPowerTransistor IPD50R280CE *)moldflashnotincluded MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.16 2.41 0.085 0.095 A1 0.00 0.15 0.000 0.006 b 0.64 0.89 0.025 0.035 b2 0.65 1.15 0.026 0.045 DOCUMENTNO. b3 5.00 5.50 0.197 0.217 Z8B00003328 c 0.46 0.60 0.018 0.024 c2 0.46 0.98 0.018 0.039 SCALE 0 D 5.97 6.22 0.235 0.245 D1 5.02 5.84 0.198 0.230 2.0 E 6.40 6.73 0.252 0.265 E1 4.70 5.60 0.185 0.220 0 2.0 e 2.29(BSC) 0.090(BSC) 4mm e1 4.57(BSC) 0.180(BSC) N 3 3 EUROPEANPROJECTION H 9.40 10.48 0.370 0.413 L 1.18 1.70 0.046 0.067 L3 0.90 1.25 0.035 0.049 L4 0.51 1.00 0.020 0.039 F1 10.60 0.417 F2 6.40 0.252 ISSUEDATE F3 2.20 0.087 01-09-2015 F4 5.80 0.228 F5 5.76 0.227 REVISION F6 1.20 0.047 05 Figure1OutlinePG-TO252,dimensionsinmm/inches Final Data Sheet 11 Rev.2.3,2016-06-13

7AppendixA Table11RelatedLinks •IFXCoolMOSWebpage:www.infineon.com •IFXDesigntools:www.infineon.com 500VCoolMOSªCEPowerTransistor IPD50R280CE Final Data Sheet 12 Rev.2.3,2016-06-13

RevisionHistory IPD50R280CE Revision:2016-06-13,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-06-29 Release of final version 2.1 2013-07-15 update to Halogen free mold compound 2.2 2015-11-17 Updated to qualified for standard grade & updated package drawing 2.3 2016-06-13 Updated ID ratings, Zth, SOA and Pd curves TrademarksofInfineonTechnologiesAG AEIPSSUaROOsRILMyFIIPDAXAIC™RMFEIL™,O™ACN,S1,E™H6Ics6™,oo™PnP,orA,SiBmCCPReaKOIPn™DCPAG™,ACEiK-K,W™™T™aE,,,fMEeCPrcPIr™PoiFmnO,EoeMSTDS™™IUTPA,AA,CCtLQh™oKi™no™Q,l,GE,M™acPoNoR,dn™TOSoRPT,FECAAENCoCToC™KKlHM™™,SOP,,TRmSEOO™cyPo--d,nS™™CoIL,Po,™ToINMrl,SioC™REvoAaT,rleES™it™hiIcC,IeC.C™D™oR,o,RIlSVOEiEmCAR™Ln™3iT,™,uCen,OueRRp™eeEv,cCeO™rOSP,NaTFvTICGeRO™AOS™,L™S™,aO,,tHRpCItIRTiCMFO™OES,STSS™™AIEV,,GHOEEy™RbTI,rG™iDdAP,A™SAVIC,EPPK™MO™O,WD,SIEI™n-RPfi,nOCSeOLom™Dna™E,rt™DL,rE,BWlaIdSe™™,, TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 500VCoolMOSªCEPowerTransistor IPD50R280CE Final Data Sheet 13 Rev.2.3,2016-06-13

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: I nfineon: IPD50R280CE IPD50R280CEATMA1 IPD50R280CEBTMA1