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  • 型号: INA132U
  • 制造商: Texas Instruments
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INA132U产品简介:

ICGOO电子元器件商城为您提供INA132U由Texas Instruments设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 INA132U价格参考。Texas InstrumentsINA132U封装/规格:线性 - 放大器 - 仪表,运算放大器,缓冲器放大器, 差分 放大器 1 电路 8-SOIC。您可以下载INA132U参考资料、Datasheet数据手册功能说明书,资料中有INA132U 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
-3db带宽

300kHz

产品目录

集成电路 (IC)半导体

描述

IC OPAMP DIFF 300KHZ 8SOIC差分放大器 Low Pwr Single-Supply

产品分类

Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps集成电路 - IC

品牌

Texas Instruments

产品手册

http://www.ti.com/litv/sbos059

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

放大器 IC,差分放大器,Texas Instruments INA132U-

数据手册

点击此处下载产品Datasheet

产品型号

INA132U

产品目录页面

点击此处下载产品Datasheet

产品种类

差分放大器

供应商器件封装

8-SOIC

共模抑制比—最小值

76 dB

包装

管件

单位重量

76 mg

单电源电压

2.7 V to 36 V

压摆率

0.1 V/µs

可用增益调整

1 V/V

商标

Texas Instruments

增益带宽积

-

安装类型

表面贴装

安装风格

SMD/SMT

封装

Tube

封装/外壳

8-SOIC(0.154",3.90mm 宽)

封装/箱体

SOIC-8

工作温度

-40°C ~ 85°C

工作电源电压

2.7 V to 36 V

工厂包装数量

75

放大器类型

差分

最大双重电源电压

+/- 18 V

最大工作温度

+ 85 C

最小工作温度

- 40 C

标准包装

75

电压-电源,单/双 (±)

2.7 V ~ 36 V, ±1.35 V ~ 18 V

电压-输入失调

75µV

电流-电源

160µA

电流-输入偏置

-

电流-输出/通道

12mA

电源电流

0.185 mA

电路数

1

系列

INA132

输入补偿电压

0.5 mV

输出类型

-

通道数量

1 Channel

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PDF Datasheet 数据手册内容提取

® (cid:13) INA132 INA132 INA132 Low Power, Single-Supply DIFFERENCE AMPLIFIER FEATURES APPLICATIONS l LOW QUIESCENT CURRENT: 160m A l DIFFERENTIAL INPUT AMPLIFIER l WIDE SUPPLY RANGE l INSTRUMENTATION AMPLIFIER Single Supply: 2.7V to 36V BUILDING BLOCK Dual Supplies: – 1.35V to – 18V l UNITY-GAIN INVERTING AMPLIFIER l LOW GAIN ERROR: – 0.075% max l G = 1/2 AMPLIFIER l LOW NONLINEARITY: 0.001% max l G = 2 AMPLIFIER l HIGH CMR: 90dB l SUMMING AMPLIFIER l HIGHLY VERSATILE CIRCUIT l DIFFERENTIAL CURRENT RECEIVER l EASY TO USE l VOLTAGE-CONTROLLED CURRENT SOURCE l LOW COST l BATTERY-POWERED SYSTEMS l 8-PIN DIP AND SO-8 PACKAGES l GROUND LOOP ELIMINATOR DESCRIPTION V+ The INA132 is a low power, unity-gain differential amplifier consisting of a precision op amp with a 7 precision resistor network. The on-chip resistors are laser trimmed for accurate gain and high common- 40kW 40kW 2 5 mode rejection. Excellent TCR tracking of the resis- –In Sense tors maintains gain accuracy and common-mode re- jection over temperature. The internal op amp’s com- mon-mode range extends to the negative supply— 6 ideal for single-supply applications. It operates on Output single (2.7V to 36V) or dual supplies (– 1.35V to – 18V). 40kW 40kW The differential amplifier is the foundation of many 3 1 +In Ref commonly used circuits. The INA132 provides this circuit function without using an expensive precision resistor network. The INA132 is available in 8-pin 4 DIP and SO-8 surface-mount packages and is speci- fied for operation over the extended industrial tem- V– perature range, –40(cid:176) C to +85(cid:176) C. International Airport Industrial Park • Mailing Address: PO Box 11400, Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111 Internet: http://www.burr-brown.com/ • FAXLine: (800) 548-6133 (US/Canada Only) • Cable: BBRCORP • Telex: 066-6491 • FAX: (520) 889-1510 • Immediate Product Info: (800) 548-6132 ©1996 Burr-Brown Corporation PDS-1353A Printed in U.S.A. November, 1996 SBOS059

– SPECIFICATIONS: V = 15V S At T = +25(cid:176)C, V = – 15V, R = 10kW connected to Ground, and Reference Pin connected to Ground, unless otherwise noted. A S L INA132P, U INA132PA, UA PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS OFFSET VOLTAGE(1) RTO Initial – 75 – 250 ] – 500 m V vs Temperature – 1 – 5 ] – 10(4) m V/(cid:176)C vs Power Supply VS = – 1.35V to – 18V – 5 – 30 ] ] m V/V vs Time 0.3 ] m V/mo INPUT IMPEDANCE(2) Differential 80 ] kW Common-Mode 80 ] kW INPUT VOLTAGE RANGE Common-Mode Voltage Range V = 0V (V–) 2(V+)–2 ] ] V O Common-Mode Rejection VCM = –15V to 28V, RS = 0W 76 90 70 ] dB OUTPUT VOLTAGE NOISE(3) RTO f = 0.1Hz to 10Hz 1.6 ] m Vp-p f = 1kHz 65 ] nV/(cid:214) Hz GAIN Initial 1 ] V/V Error VO = –14V to 13.5V – 0.01 – 0.075 ] – 0.1 % vs Temperature(4) – 1 – 10 ] ] ppm/(cid:176)C vs Nonlinearity V = –14V to 13.5V – 0.0001 – 0.001 ] – 0.002 % of FS O OUTPUT Voltage, Positive R = 100kW to Ground (V+)–1 (V+)–0.8 ] ] V L Negative RL = 100kW to Ground (V–)+0.5 (V–)+0.15 ] ] V Positive R = 10kW to Ground (V+)–1.5 (V+)–0.8 ] ] V L Negative RL = 10kW to Ground (V–)+1 (V–)+0.25 ] ] V Current Limit, Continuous to Common – 12 ] mA Capacitive Load (Stable Operation) 10,000 ] pF FREQUENCY RESPONSE Small Signal Bandwidth –3dB 300 ] kHz Slew Rate 0.1 ] V/m s Settling Time: 0.1% V = 10V Step 85 ] m s O 0.01% VO = 10V Step 88 ] m s Overload Recovery Time 50% Overdrive 7 ] m s POWER SUPPLY Rated Voltage – 15 ] V Voltage Range – 1.35 – 18 ] ] V Quiescent Current IO = 0mA – 160 – 185 ] ] m A TEMPERATURE RANGE Specification –40 +85 ] ] (cid:176)C Operation –55 +125 ] ] (cid:176)C Storage –55 +125 ] ] (cid:176)C Thermal Resistance, Q JA 8-Pin DIP 100 ] (cid:176)C/W SO-8 Surface-Mount 150 ] (cid:176)C/W ]Specifications the same as INA132P. NOTES: (1) Includes effects of amplifier’s input bias and offset currents. (2) 40kW resistors are ratio matched but have – 20% absolute value. (3) Includes effects of amplifier’s input current noise and thermal noise contribution of resistor network. (4) Guaranteed by wafer test to 95% confidence level. The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. ® INA132 2

SPECIFICATIONS: V = +5V S At T = +25(cid:176)C, V = +5V, R = 10kW connected to V /2, and Reference Pin connected to V /2, unless otherwise noted. A S L S S INA132P, U INA132PA, UA PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS OFFSET VOLTAGE(1) RTO Initial – 150 – 500 ] – 750 m V vs Temperature – 2 ] m V/(cid:176)C INPUT VOLTAGE RANGE Common-Mode Voltage Range 0 2(V+)–2 ] ] V Common-Mode Rejection VCM = 0V to 8V, RS = 0W 76 90 70 ] dB OUTPUT Voltage, Positive R = 100kW (V+)–1 (V+)–0.75 ] ] V L Negative RL = 100kW +0.25 +0.06 ] ] V Positive R = 10kW (V+)–1 (V+)–0.8 ] ] V L Negative RL = 10kW +0.25 +0.12 ] ] V POWER SUPPLY Rated Voltage +5 ] V Voltage Range +2.7 +36 ] ] V Quiescent Current I = 0mA – 155 – 185 ] ] m A O ]Specifications the same as INA132P. NOTE: (1) Include effects of amplifier’s input bias and offset currents. PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS TOP VIEW DIP/SOIC Supply Voltage, V+ to V–....................................................................36V Input Voltage Range..........................................................................– 80V Output Short-Circuit (to ground)..............................................Continuous Operating Temperature.................................................–55(cid:176)C to +125(cid:176)C Ref(cid:13) 1(cid:13) 8(cid:13) No Internal Connection(cid:13) Storage Temperature.....................................................–55(cid:176)C to +125(cid:176)C Junction Temperature....................................................................+150(cid:176)C Lead Temperature (soldering, 10s)...............................................+300(cid:176)C –In(cid:13) 2(cid:13) 7(cid:13) V+(cid:13) ORDERING INFORMATION +In(cid:13) 3(cid:13) 6(cid:13) Output(cid:13) PACKAGE DRAWING TEMPERATURE V– 4 5 Sense PRODUCT PACKAGE NUMBER(1) RANGE INA132PA 8-Pin Plastic DIP 006 –40(cid:176)C to +85(cid:176)C INA132P 8-Pin Plastic DIP 006 –40(cid:176)C to +85(cid:176)C INA132UA SO-8 Surface-Mount 182 –40(cid:176)C to +85(cid:176)C INA132U SO-8 Surface-Mount 182 –40(cid:176)C to +85(cid:176)C NOTE: (1) For detailed drawing and dimension table, please see end of data ELECTROSTATIC sheet, or Appendix C of Burr-Brown IC Data Book. DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Burr-Brown recommends that all integrated circuits be handled with ap- propriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ® 3 INA132

TYPICAL PERFORMANCE CURVES At T = +25(cid:176)C and V = – 15V, unless otherwise noted. A S GAIN vs FREQUENCY COMMON-MODE REJECTION vs FREQUENCY 20(cid:13) 100(cid:13) V = ±15V or +5V C = 100pF(cid:13) S L R = 10kW 90(cid:13) L B) B) 0(cid:13) n (d 80(cid:13) VS = ±15V d o n ( cti Gai eje 70(cid:13) VS = +5V Closed-Loop ––2400(cid:13)(cid:13) CL R= L1 =0 0¥0pF(cid:13) mmon-Mode R 6500(cid:13)(cid:13) o 40(cid:13) C –60 30 10k 100k 1M 10 100 1k 10k 100k 1M Frequency (Hz) Frequency (Hz) POWER SUPPLY REJECTION vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT 120(cid:13) V+(cid:13) +PSRR (V+) –0.5(cid:13) 125°C 8855°°CC 25°C ction (dB) 10800(cid:13)(cid:13) VS = ±15VVS = +5V Swing (V) (V((+VV)++ –)) 1 ––.152(cid:13)(cid:13)(cid:13) –55°C –40°C ower Supply Reje 642000(cid:13)(cid:13)(cid:13) –PSRR Output Voltage (((VVV((+––VV)))–– ++–)) 221++...55251(cid:13)(cid:13)(cid:13)(cid:13)(cid:13)(cid:13) 125°C 85°–C55°C 2–54°C0°C P (V–) +0.5(cid:13) 0 V– (cid:13) 10 100 1k 10k 100k 1M (cid:13) 0 ±2 ±4 ±6 ±8 ±10 Frequency (Hz) (cid:13) Output Current (mA) QUIESCENT and SHORT-CIRCUIT CURRENT vs(cid:13) TEMPERATURE SLEW RATE vs TEMPERATURE 210(cid:13) 13(cid:13) 0.18(cid:13) 200(cid:13) 12(cid:13) 0.16(cid:13) ±I A) SC mA| Quiescent Current (µ 111987000(cid:13)(cid:13)(cid:13) IQ 11910(cid:13) (cid:13)(cid:13) hort-Circuit Current | Slew Rate (V/µs) 000...111420(cid:13)(cid:13)(cid:13) 160(cid:13) 8(cid:13) S 0.08(cid:13) 150 7 0.06 –75 –50 –25 0 25 50 75 100 125 –75 –50 –25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) ® INA132 4

TYPICAL PERFORMANCE CURVES (CONT) At T = +25(cid:176)C and V = – 15V, unless otherwise noted. A S SMALL-SIGNAL STEP RESPONSE SMALL-SIGNAL STEP RESPONSE CL = 200pF CL = 1000pF v v di di V/ V/ m m 0 0 5 5 10m s/div 10m s/div LARGE-SIGNAL STEP RESPONSE SETTLING TIME vs LOAD CAPACITANCE 100(cid:13) 10V Step 96(cid:13) s) v e (µ 92(cid:13) 0.01% di m V/ Ti 5 ng 88(cid:13) ettli S 84(cid:13) 0.1% 80 100m s/div 100pF 1000pF 10,000pF Load Capacitance INPUT COMMON-MODE VOLTAGE RANGE vs(cid:13) 0.1 to 10Hz PEAK-TO-PEAK OUTPUT VOLTAGE VOLTAGE NOISE 40(cid:13) V = ±15V S 30(cid:13) e (V) 20(cid:13) g V = +5V olta 10(cid:13) S V v e 0(cid:13) di od V/ n-M –10(cid:13) m0.5 o m m –20(cid:13) VS = ±5V o C –30(cid:13) V = 0V REF –40 –15 –10 –5 0 5 10 15 500ms/div Output Voltage (V) ® 5 INA132

TYPICAL PERFORMANCE CURVES (CONT) At T = +25(cid:176)C and V = – 15V, unless otherwise noted. A S OFFSET VOLTAGE(cid:13) OFFSET VOLTAGE(cid:13) PRODUCTION DISTRIBUTION PRODUCTION DISTRIBUTION 25(cid:13) 18(cid:13) V = +5V VS = ±15V 16(cid:13) S %) 20(cid:13) %) 14(cid:13) s ( s ( 12(cid:13) plifier 15(cid:13) plifier 10(cid:13) m m of A 10(cid:13) of A 8(cid:13) nt nt 6(cid:13) e e c c Per 5(cid:13) Per 4(cid:13) 0.1% 0.2% 0.1% 2(cid:13) 0.1% 0.1% 0 0 –500 –400 –300 –200 –100 0 100 200 300 400 500 (cid:13)(cid:13)–700(cid:13)(cid:13)–600(cid:13)(cid:13)–500(cid:13)(cid:13)–400(cid:13)(cid:13)–300(cid:13)(cid:13)–200(cid:13)(cid:13)–100(cid:13)(cid:13)0(cid:13)(cid:13)100(cid:13)(cid:13)200(cid:13)(cid:13)300(cid:13)(cid:13)400(cid:13)(cid:13)500(cid:13)(cid:13)600(cid:13)(cid:13)700(cid:13)(cid:13) Offset Voltage (µV) Offset Voltage (µV) OFFSET VOLTAGE DRIFT(cid:13) PRODUCTION DISTRIBUTION 40(cid:13) V = ±15V 35(cid:13) S %) 30(cid:13) s ( er 25(cid:13) plifi m 20(cid:13) A nt of 15(cid:13) e erc 10(cid:13) P 0.2% 5(cid:13) 0 5(cid:13)1(cid:13)5(cid:13)2(cid:13)5(cid:13)3(cid:13)5(cid:13)4(cid:13)5(cid:13)5(cid:13)5(cid:13)6(cid:13)5(cid:13)7(cid:13)5(cid:13)8(cid:13)5(cid:13)9(cid:13)5(cid:13)0 0. 1. 2. 3. 4. 5. 6. 7. 8. 9.1 Offset Voltage Drift (µV/°C) ® INA132 6

APPLICATIONS INFORMATION supply ground). Although input voltages on pins 2 and 3 that are below the negative supply voltage will not damage Figure 1 shows the basic connections required for operation the device, operation in this region is not recommended. of the INA132. Power supply bypass capacitors should be Transient conditions at the inverting input terminal below connected close to the device pins. the negative supply can cause a positive feedback condition The differential input signal is connected to pins 2 and 3 as that could lock the INA132’s output to the negative rail. shown. The source impedances connected to the inputs must The INA132 can accurately measure differential signals that be nearly equal to assure good common-mode rejection. An are above the positive power supply. Linear common-mode 8W mismatch in source impedance will degrade the com- range extends to nearly twice the positive power supply mon-mode rejection of a typical device to approximately voltage—see typical performance curve, Common-Mode 80dB. Gain accuracy will also be slightly affected. If the Range vs Output Voltage. source has a known impedance mismatch, an additional resistor in series with one input can be used to preserve good OFFSET VOLTAGE TRIM common-mode rejection. The INA132 is laser trimmed for low offset voltage and drift. Do not interchange pins 1 and 3 or pins 2 and 5, even though Most applications require no external offset adjustment. nominal resistor values are equal. These resistors are laser Figure 2 shows an optional circuit for trimming the output trimmed for precise resistor ratios to achieve accurate gain offset voltage. The output is referred to the output reference and highest CMR. Interchanging these pins would not pro- terminal (pin 1), which is normally grounded. A voltage vide specified performance. As shown in Figure 1, measure- applied to the Ref terminal will be summed with the output ments should be sensed at the load. signal. This can be used to null offset voltage. The source impedance of a signal applied to the Ref terminal should be V– V+ less than 8W to maintain good common-mode rejection. To assure low impedance at the Ref terminal, the trim voltage 1µF 1µF can be buffered with an op amp, such as the OPA177. 4 7 INA132 CAPACITIVE LOAD DRIVE CAPABILITY The INA132 can drive large capacitive loads, even at low R R V 2 1 2 5 supplies. It is stable with a 10,000pF load. Refer to the 2 40kW 40kW “Small-Signal Step Response” and “Settling Time vs Load Capacitance” typical performance curves. 6 R 3 3 V 3 40kW RL INA132 R 4 40kW R R 2 1 2 5 VOUT = V3 – V2 V2 1 Ref 6 V O 8W R FIGURE 1. Basic Power Supply and Signal Connections. 3 3 V 3 R OPERATING VOLTAGE 4 +15V The INA132 operates from single (+2.7V to +36V) or dual (– 1.35V to – 18V) supplies with excellent performance. V = V –V(cid:13) Ref1 R = 237kW Specifications are production tested with +5V and – 15V OOffset A3 dj us2tment(cid:13) 100kW Range = ±500µV supplies. Most behavior remains unchanged throughout the 8W full operating voltage range. Parameters which vary signifi- –15V cantly with operating voltage are shown in the typical performance curves. NOTE: For ±750µV range, R = 158kW . The internal op amp in the INA132 is a single-supply design. FIGURE 2. Offset Adjustment. This allows linear operation with the op amp’s common- mode voltage equal to, or slightly below V– (or single ® 7 INA132

BUF634 inside feedback (cid:13) INA132 V loop contributes no error. 1 INA132 2 5 –In A –In 1 2 5 R2 6 BUF634 V O R1 6 3 1 (Low I mode) RL R2 VO +In Q 3 1 A FIGURE 4. Low Power, High Output Current Precision V 2 2 Difference Amplifier. +In V = (1 + 2R/R) (V –V) O 2 1 2 1 The INA132 can be combined with op amps to form a complete instru- mentation amplifier with specialized performance characteristics. Burr- V+ V+ 3 Brown offers many complete high performance IAs. Products with related performances are shown at the right. INA132 2 SIMILIAR COMPLETE A1, A2 FEATURE BURR-BROWN IA 5 OPA27 Low Noise INA103 7 OPA129 Ultra Low Bias Current (fA) INA116 OPA177 Low Offset Drift, Low Noise INA114,INA128 6 OPA2130 Low Power, FET-Input (pA) INA111 (V+)/2 OPA2234 Single Supply, Precision, Low Power INA122(1), INA118 OPA2237 Single Supply, Low Power, MSOP-8 INA122(1), INA126(1) NOTE: (1) Available 1Q’97. Ground 1 4 Ground FIGURE 3. Precision Instrumentation Amplifier. FIGURE 5. Pseudoground Generator. +5V 7 INA132 2 5 –In 6 12 Bits(cid:13) ADS7806 Out 3 1 0V-4V(cid:13) +In Input 4 V = 0V to 8V CM t = 45µs (4V Step to 0.01%) S FIGURE 6. Differential Input Data Acquisition. ® INA132 8

Set R = R 1 2 V+ 12.5kW 1kW 0V to 10V(cid:13) In 50kW 7 INA132 2 5 +15V OPA27 2 V2 40kW 40kW R(cid:13) 1 6 50.1W 2N3904 6 REF10 For 4-20mA applications,(cid:13) 10V the REF10 sets the 4mA(cid:13) low-scale output for 0V input. 40kW 40kW 50R.12(cid:13)W 3 1 V 3 4 R 4 LOAD I = 4 to 20mA O 1(cid:13) 1(cid:13) I = V – V + O 3 2 4 0 k W R 2 FIGURE 7. Precision Voltage-to-Current Conversion. The difference amplifier is a highly versatile building •Precision Summing Instrumentation Amplifier block that is useful in a wide variety of applications. See •Precision Absolute Value Buffer the INA105 data sheet for additional applications ideas, •Precision Voltage-to-Current Converter with Differential including: Inputs •Current Receiver with Compliance to Rails •Differential Input Voltage-to-Current Converter for Low •Precision Unity-Gain Inverting Amplifier I OUT •– 10V Precision Voltage Reference •Isolating Current Source •– 5V Precision Voltage Reference •Differential Output Difference Amplifier •Precision Unity-Gain Buffer •Isolating Current Source with Buffering Amplifier for •Precision Average Value Amplifier Greater Accuracy •Precision G = 2 Amplifier •Window Comparator with Window Span and Window Center Inputs •Precision Summing Amplifier •Precision Voltage-Controlled Current Source with Buff- •Precision G = 1/2 Amplifier ered Differential Inputs and Gain •Precision Bipolar Offsetting •Digitally Controlled Gain of – 1 Amplifier •Precision Summing Amplifier with Gain •Instrumentation Amplifier Guard Drive Generator ® 9 INA132

PACKAGE OPTION ADDENDUM www.ti.com 20-Oct-2009 PACKAGING INFORMATION OrderableDevice Status(1) Package Package Pins Package EcoPlan(2) Lead/BallFinish MSLPeakTemp(3) Type Drawing Qty INA132P OBSOLETE PDIP P 8 TBD CallTI CallTI INA132PA OBSOLETE PDIP P 8 TBD CallTI CallTI INA132U ACTIVE SOIC D 8 75 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) INA132U/2K5 ACTIVE SOIC D 8 2500 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) INA132U/2K5E4 ACTIVE SOIC D 8 2500 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) INA132UA ACTIVE SOIC D 8 75 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) INA132UA/2K5 ACTIVE SOIC D 8 2500 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) INA132UA/2K5E4 ACTIVE SOIC D 8 2500 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) INA132UAE4 ACTIVE SOIC D 8 75 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) INA132UAG4 ACTIVE SOIC D 8 75 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) INA132UG4 ACTIVE SOIC D 8 75 Green(RoHS& CUNIPDAU Level-3-260C-168HR noSb/Br) (1)Themarketingstatusvaluesaredefinedasfollows: ACTIVE:Productdevicerecommendedfornewdesigns. LIFEBUY:TIhasannouncedthatthedevicewillbediscontinued,andalifetime-buyperiodisineffect. NRND:Notrecommendedfornewdesigns.Deviceisinproductiontosupportexistingcustomers,butTIdoesnotrecommendusingthispartin anewdesign. PREVIEW:Devicehasbeenannouncedbutisnotinproduction.Samplesmayormaynotbeavailable. OBSOLETE:TIhasdiscontinuedtheproductionofthedevice. (2)EcoPlan-Theplannedeco-friendlyclassification:Pb-Free(RoHS),Pb-Free(RoHSExempt),orGreen(RoHS&noSb/Br)-pleasecheck http://www.ti.com/productcontentforthelatestavailabilityinformationandadditionalproductcontentdetails. TBD:ThePb-Free/Greenconversionplanhasnotbeendefined. Pb-Free(RoHS):TI'sterms"Lead-Free"or"Pb-Free"meansemiconductorproductsthatarecompatiblewiththecurrentRoHSrequirements forall6substances,includingtherequirementthatleadnotexceed0.1%byweightinhomogeneousmaterials.Wheredesignedtobesoldered athightemperatures,TIPb-Freeproductsaresuitableforuseinspecifiedlead-freeprocesses. Pb-Free(RoHSExempt):ThiscomponenthasaRoHSexemptionforeither1)lead-basedflip-chipsolderbumpsusedbetweenthedieand package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible)asdefinedabove. Green(RoHS&noSb/Br):TIdefines"Green"tomeanPb-Free(RoHScompatible),andfreeofBromine(Br)andAntimony(Sb)basedflame retardants(BrorSbdonotexceed0.1%byweightinhomogeneousmaterial) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incomingmaterialsandchemicals.TIandTIsuppliersconsidercertaininformationtobeproprietary,andthusCASnumbersandotherlimited informationmaynotbeavailableforrelease. InnoeventshallTI'sliabilityarisingoutofsuchinformationexceedthetotalpurchasepriceoftheTIpart(s)atissueinthisdocumentsoldbyTI toCustomeronanannualbasis. Addendum-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 20-Oct-2009 TAPE AND REEL INFORMATION *Alldimensionsarenominal Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1 Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant (mm) W1(mm) INA132U/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 INA132UA/2K5 SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 PackMaterials-Page1

PACKAGE MATERIALS INFORMATION www.ti.com 20-Oct-2009 *Alldimensionsarenominal Device PackageType PackageDrawing Pins SPQ Length(mm) Width(mm) Height(mm) INA132U/2K5 SOIC D 8 2500 346.0 346.0 29.0 INA132UA/2K5 SOIC D 8 2500 346.0 346.0 29.0 PackMaterials-Page2

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