IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGP20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl

HighspeedIGBTinTrenchandFieldstoptechnology  Features: TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy ••lloowwVECMEIsat •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency IGP20N60H3 Highspeedswitchingseriesthirdgeneration C G E C G C E KeyPerformanceandPackageParameters Type V I V ,T =25°C T Marking Package CE C CEsat vj vjmax IGP20N60H3 600V 20A 1.95V 175°C G20H603 PG-TO220-3 2 Rev.2.2,2014-03-11

TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 IGP20N60H3 Highspeedswitchingseriesthirdgeneration 3 Rev.2.2,2014-03-11

Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj‡25°C VCE 600 V DTTCCC==c21o50lle°0Cc°Ctorcurrent,limitedbyTvjmax IC 4200..00 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 80.0 A TVuCErn£ o6ff0 s0aVf,eT ovpj£er1a7ti5n°gC a,rtepa=1µs - 80.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VATiGlmloEew= eb1de5 tn.w0ueVme,bnVe CsrCh oo£fr t4s hc0io0rcrVtu citisrc: u‡i t1s. 0<s 1000 tSC µs Tvj=150°C 5 PPoowweerrddiissssiippaattiioonnTTCC==2150°0C°C Ptot 18750..00 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Swoalvdee rsinogld eterimngp e 1ra.6tu mrem, (0.063 in.) from case for 10s 260 °C MMoauxinmtiunmg toofr qmuoeu, nMti3n gs cprreowcesses: 3 M 0.6 Nm ThermalResistance Parameter SymbolConditions Max.Value Unit Characteristic IjuGnBcTti othne -r mcaasle resistance, Rth(j-c) 0.88 K/W Tjuhnecrtmioanl -r easmisbtiaenncte Rth(j-a) 62 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value Parameter SymbolConditions Unit min. typ. max. StaticCharacteristic Collector-emitter breakdown voltageV(BR)CES VGE=0V,IC=2.00mA 600 - - V Collector-emitter saturation voltage VCEsat VTTTvvvGjjjE====21115275°55C.°°0CCV,IC=20.0A --- 122...935500 2.--40 V Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE 4.1 5.1 5.7 V Zero gate voltage collector current ICES VTTvvCjjE===216570°5C0°CV,VGE=0V -- -- 14500.00.0 µA IGP20N60H3 Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 10.9 - S Highspeedswitchingseriesthirdgeneration 4 Rev.2.2,2014-03-11

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Value Parameter SymbolConditions Unit min. typ. max. DynamicCharacteristic Input capacitance Cies - 1100 - Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 70 - pF Reverse transfer capacitance Cres - 32 - Gate charge QG VVCGCE==41850VV,IC=20.0A, - 120.0 - nC Internal emitter inductance mcaesaesured 5mm (0.197 in.) from LE - 7.0 - nH SMTihamoxer.t 1bc0eir0tcw0ue iste hcnoo srllteh ccoitrroct ruc ciitruscrurietsn:t ‡ 1.0s IC(SC) VtTSvGCjE=£=1515µ50s.°0CV,VCC£400V, - 120 - A SwitchingCharacteristic,InductiveLoad Value Parameter SymbolConditions Unit min. typ. max. IGBTCharacteristic,atTvj=25°C TRTFuuaisrrllenn t --itoomimnfef eddeellaayy ttiimmee ttttdrdf((oonff)) TVVrCLGsvCGsj=CE,==C==12s344050.0.°f60prC0Wo/FV1,m,5,L.FI0sCiVg==.,27E05.n0HA,, ---- 112196014 ---- nnnnssss Turn-on energy Eon Energy losses include “tail” and - 0.45 - mJ Turn-off energy Eoff dreiocdoeve (rIyK.P20N60H3) reverse - 0.24 - mJ Total switching energy Ets - 0.69 - mJ SwitchingCharacteristic,InductiveLoad Value Parameter SymbolConditions Unit min. typ. max. IGBTCharacteristic,atTvj=175°C TRTFuuaisrrllenn t --itoomimnfef eddeellaayy ttiimmee ttttdrdf((oonff)) TVVrCLGsvCGsj=CE,==C==11s344070.0.5f60pr0°Wo/FCV1m,5,,L.FI0sCiVg==.,27E05.n0HA,, ---- 211126547 ---- nnnnssss Turn-on energy Eon Energy losses include “tail” and - 0.60 - mJ Turn-off energy Eoff dreiocdoeve (rIyK.P20N60H3) reverse - 0.36 - mJ IGP20N60H3 Total switching energy Ets - 0.96 - mJ Highspeedswitchingseriesthirdgeneration 5 Rev.2.2,2014-03-11

I,COLLECTORCURRENT[A]C f,SWITCHINGFREQUENCY[kHz] Figure 1.Collectorcurrentasafunctionofswitching frequency (rTG=j£1147,56°WC),D=0.5,VCE=400V,VGE=15/0V, IGP20N60H3 Highspeedswitchingseriesthirdgeneration 60 100 50 tp=1µs 40 10 10µs 50µs TC=80° 100µs 30 TC=110° 200µs TC=80° 500µs 20 1 TC=110° DC I,COLLECTORCURRENT[A]C Figure 2.VF(CDoE,=rCw0,OaTrLdCL=Eb2iC5a°TsCOs,RaTf-j£eE1Mo7pI5Te°TCraE;tRVinGVgEO=a1Lr5eTVaA)GE[V] 10 0 0.1 1 10 100 1000 1 10 100 1000 180 40 160 35 140 W] A] 30 N[ 120 NT[ O E TI R 25 A R P 100 U SI C S R 20 DI O R 80 CT E E W L 15 O L P 60 O P,tot I,CC 10 40 5 20 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 T ,CASETEMPERATURE[°C] T ,CASETEMPERATURE[°C] C C Figure 3.Powerdissipationasafunctionofcase Figure 4.Collectorcurrentasafunctionofcase temperature temperature (T£ 175°C) (V ‡ 15V,T£ 175°C) j GE j 6 Rev.2.2,2014-03-11

I,COLLECTORCURRENT[A]C VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5.Typicaloutputcharacteristic (Tj=25°C) IGP20N60H3 Highspeedswitchingseriesthirdgeneration 80 80 70 VGE=20V 70 VGE=20V 17V 17V 60 15V A] 60 15V T[ 13V N 13V E 50 R 50 11V R 11V U C 40 9V R 40 9V O 7V T 7V C E 30 5V L 30 5V L O C 20 I,C 20 10 10 0 0 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 6.Typicaloutputcharacteristic (T=175°C) j 70 4.0 Tj=25°C IC=10A Tj=175°C IC=20A V] IC=40A 60 N[ 3.5 O TI T[A] 50 URA N T 3.0 E A R S R R U 40 E C T R MIT 2.5 O T E C 30 R- E O L T OL C 2.0 E I,CC 20 OLL C ,at) 1.5 10 E(s C V 0 1.0 5 6 7 8 9 10 11 12 0 25 50 75 100 125 150 175 V ,GATE-EMITTERVOLTAGE[V] T,JUNCTIONTEMPERATURE[°C] GE j Figure 7.Typicaltransfercharacteristic Figure 8.Typicalcollector-emittersaturationvoltageas (V =20V) afunctionofjunctiontemperature CE (V =15V) GE 7 Rev.2.2,2014-03-11

MES[ns] WITCHINGTI t,S IC,COLLECTORCURRENT[A] Figure 9.Typicalswitchingtimesasafunctionof collectorcurrent (riGn=d1.4lo,6aWd,,Ttej=s1t7ci5rc°Cui,tVinCEF=ig4.0E0)V,VGE=15/0V, IGP20N60H3 Highspeedswitchingseriesthirdgeneration 1000 td(off) tf td(on) tr td(off) tf td(on) s] tr S[n E 100 M TI G 100 N HI C T WI S t, 10 10 0 5 10 15 20 25 30 35 40 5 10 15 20 25 30 35 40 45 50 r ,GATERESISTOR[W ] G Figure 10.Typicalswitchingtimesasafunctionofgate resistor (ind.load,T=175°C,V =400V,V =15/0V, j CE GE I =20A,testcircuitinFig.E) C 6.0 typ. V] min. E[ 5.5 max. G A 100 ttdf(off) OLT 5.0 S[ns] ttdr(on) OLDV 4.5 E H M S TI E G HR 4.0 N T HI R C E T T WI 10 T 3.5 S MI t, E-E T 3.0 A G ,h) E(t 2.5 G V 1 2.0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 T,JUNCTIONTEMPERATURE[°C] T,JUNCTIONTEMPERATURE[°C] j j Figure 11.Typicalswitchingtimesasafunctionof Figure 12.Gate-emitterthresholdvoltageasafunction junctiontemperature ofjunctiontemperature (ind.load,V =400V,V =15/0V,I =20A, (I =0.29mA) CE GE C C r =14,6W ,testcircuitinFig.E) G 8 Rev.2.2,2014-03-11

mJ] WITCHINGENERGYLOSSES[ E,S IC,COLLECTORCURRENT[A] Figure 13.Typicalswitchingenergylossesasa functionofcollectorcurrent (riGn=d1.4lo,6aWd,,Ttej=s1t7ci5rc°Cui,tVinCEF=ig4.0E0)V,VGE=15/0V, IGP20N60H3 Highspeedswitchingseriesthirdgeneration 2.5 2.00 Eoff Eoff Eon Eon Ets 1.75 Ets 2.0 J] m S[ 1.50 E S S O 1.25 1.5 L Y G R E 1.00 N E G 1.0 N 0.75 HI C T WI 0.50 S 0.5 E, 0.25 0.0 0.00 4 8 12 16 20 24 28 32 36 40 5 10 15 20 25 30 35 40 45 50 r ,GATERESISTOR[W ] G Figure 14.Typicalswitchingenergylossesasa functionofgateresistor (ind.load,T=175°C,V =400V,V =15/0V, j CE GE I =20A,testcircuitinFig.E) C 1.0 1.50 Eoff Eoff Eon Eon Ets Ets 1.25 J] 0.8 J] m m S[ S[ E E S S S S 1.00 O O L 0.6 L Y Y G G R R E E 0.75 N N E E G G 0.4 N N HI HI C C 0.50 T T WI WI S S E, 0.2 E, 0.25 0.0 0.00 25 50 75 100 125 150 175 200 250 300 350 400 450 T,JUNCTIONTEMPERATURE[°C] V ,COLLECTOR-EMITTERVOLTAGE[V] j CE Figure 15.Typicalswitchingenergylossesasa Figure 16.Typicalswitchingenergylossesasa functionofjunctiontemperature functionofcollectoremittervoltage (indload,V =400V,V =15/0V,I =20A, (ind.load,T=175°C,V =15/0V,I =20A, CE GE C j GE C r =14,6W ,testcircuitinFig.E) r =14,6W ,testcircuitinFig.E) G G 9 Rev.2.2,2014-03-11

MITTERVOLTAGE[V] V,GATE-EGE QGE,GATECHARGE[nC] Figure 17.Typicalgatecharge (IC=20A) IGP20N60H3 Highspeedswitchingseriesthirdgeneration 16 120V 480V 14 1000 12 Cies pF] CCoreess 10 E[ C N A 8 T CI A P A 100 6 C C, 4 2 0 10 0 20 40 60 80 100 120 140 0 10 20 30 V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 18.Typicalcapacitanceasafunctionof collector-emittervoltage (V =0V,f=1MHz) GE 300 15 A] NT[ µs] RE 250 E[ 12 R M U TI RC ND O A CT 200 ST 9 E H L T OL WI C T T UI UI 150 C 6 C R R CI CI T T R R O O H H 100 S 3 ,SC) t,SC S C( I 50 0 10 12 14 16 18 20 10 11 12 13 14 15 V ,GATE-EMITTERVOLTAGE[V] V ,GATE-EMITTERVOLTAGE[V] GE GE Figure 19.Typicalshortcircuitcollectorcurrentasa Figure 20.Shortcircuitwithstandtimeasafunctionof functionofgate-emittervoltage gate-emittervoltage (V £ 400V,startatT=25°C) (V £ 400V,startatT£ 150°C) CE j CE j 10 Rev.2.2,2014-03-11

W] MPEDANCE[K/ MALI Z,TRANSIENTTHERthJC tp,PULSEWIDTH[s] Figure 21.IGBTtransientthermalimpedance (D=tp/T) IGP20N60H3 Highspeedswitchingseriesthirdgeneration 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 rtii[[Ks]/:W]: 09..067E0-541042 06..380E7-40851 00..301190889486423 00..108679125534885 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 11 Rev.2.2,2014-03-11

IGP20N60H3 Highspeedswitchingseriesthirdgeneration 12 Rev.2.2,2014-03-11

IGP20N60H3 Highspeedswitchingseriesthirdgeneration 13 Rev.2.2,2014-03-11

RevisionHistory IGP20N60H3 Revision:2014-03-11,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2010-02-01 - 1.2 2010-07-26 Preliminary datasheet 2.1 2013-12-09 New value IRmax limit at 175°C 2.2 2014-03-11 Max ratings Vce, Tvj ‡ 25°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. IGP20N60H3 Highspeedswitchingseriesthirdgeneration 14 Rev.2.2,2014-03-11

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