HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Typical Applications Features The HmC758lp3(e) is ideal for: Noise figure: 1.7 dB T • Cellular infrastructure, wimAX & lTe/4G Gain: 22 dB m s • software Defined radios output ip3: +37 dBm - • repeaters and femtocells single supply: +3V to +5V e • Access points 50 ohm matched input/output s • Test & measurement equipment i 16 lead 3x3 mm smT package: 9 mm2 o N w Functional Diagram General Description o The HmC758lp3(e) is a GaAs pHemT mmiC low l Noise Amplifier that is ideal for Cellular infrastructure, wimAX & lTe/4G basestation front-end receivers - operating between 700 and 2200 mHz. The amplifier s has been optimized to provide 1.7 dB noise figure, r 21 dB gain and +37 dBm output ip3 from a single e supply of +5V. input and output return losses are i f excellent with minimal external matching and bias i l decoupling components. The HmC758lp3(e) can p be biased with +3V to +5V and features an externally m adjustable supply current, which allows the designer A to tailor the linearity performance of the lNA for each application. Electrical Specifications, T = +25° C, R1= 390Ω, R2= 560Ω* A Vdd = +3V Vdd = +5V parameter Units min. Typ. max. min. Typ. max. min. Typ. max. min. Typ. max. frequency range 700 - 1700 1700 - 2200 700 - 1700 1700 - 2200 mHz Gain 19 21.8 16 19.4 20 22.7 18 21.3 dB Gain Variation over Temperature 0.005 0.01 0.004 0.01 dB/ °C Noise figure 1.6 2.5 1.4 1.8 1.7 2.6 1.6 2.0 dB input return loss 15 13 14 14 dB output return loss 11 15 10 12 dB output power for 1 dB 16 18 18 20 20.5 22.5 22 24 dBm Compression (p1dB) saturated output power (psat) 20 21.5 23.5 25 dBm output Third order intercept (ip3) 31 31.5 36 35 dBm supply Current (idd) 80 102 130 80 102 130 190 227 260 190 227 260 mA * r1 & r2 resistors set current, see application circuit herein For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 1 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Broadband Gain & Return Loss Gain vs. Temperature, Vdd = +5V 25 25 T 20 Vdd=5V m 15 Vdd=3V 23 B) 10 s RESPONSE (d-1-0505 S21 GAIN (dB) 1291 ++ -284550CCC ise - o -15 17 -20 S22 N S11 -25 15 w 0 1 2 3 4 5 6 0.5 0.9 1.3 1.7 2.1 2.5 FREQUENCY (GHz) FREQUENCY (GHz) o l Input Return Loss vs. - Gain vs. Temperature, Vdd = +3V Temperature, Vdd = +5V s r 25 0 e i f 23 dB) -5 ++ -284550CCC li B) 21 SS ( p GAIN (d 19 ++2855CC URN LO-10 Am -40C ET R -15 17 15 -20 0.5 0.9 1.3 1.7 2.1 2.5 0.5 0.9 1.3 1.7 2.1 2.5 FREQUENCY (GHz) FREQUENCY (GHz) Output Return Loss vs. Reverse Isolation vs. Temperature, Vdd = +5V Temperature, Vdd = +5V 0 0 -10 B) -5 ++2855CC ++2855CC OSS (d -40C ON (dB)-20 -40C URN L-10 OLATI-30 RET IS-40 -15 -50 -20 -60 0.5 0.9 1.3 1.7 2.1 2.5 0.5 0.9 1.3 1.7 2.1 2.5 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 2 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Noise Figure vs. Temperature [1] Output IP3 vs. Temperature 3 45 T +85C m 2.5 Vdd=5V Vdd=5V Vdd=3V 40 s B) - RE (d 2 m) 35 e FIGU 1.5 3 (dB s SE +25C IP 30 OI 1 oi N 0.5 -40C 25 ++2855CC N -40C Vdd=3V w 0 20 0.5 0.9 1.3 1.7 2.1 2.5 0.5 0.9 1.3 1.7 2.1 2.5 FREQUENCY (GHz) FREQUENCY (GHz) o l - Output IP3 and Supply Current vs. Output IP3 and Supply Current vs. s Supply Voltage @ 900 MHz Supply Voltage @ 1900 MHz r e 45 300 45 300 i f 40 IP3 250 40 IP3 250 i l Amp IP3 (dBm) 3305 125000 Idd (mA) IP3 (dBm) 3305 125000 Idd (mA) 25 Idd 100 25 Idd 100 20 50 20 50 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 Voltage Supply (V) Voltage Supply (V) Output IP3 vs. Output Power @ 900 MHz Output IP3 vs. Output Power @ 1900 MHz 40 36 35 38 34 m) 36 Vdd=3V m) B Vdd=5V B 3 (d 3 (d 33 VVdddd==35VV IP 34 IP 32 32 31 30 30 -10 -5 0 5 10 -10 -5 0 5 10 OUTPUT POWER (dBm) OUTPUT POWER (dBm) [1] measurement reference plane shown on evaluation pCB drawing. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 3 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Power Compression @ 900 MHz [1] Power Compression @ 900 MHz [2] 25 25 T %) 20 %) 20 m E ( E ( PA PA Pout s B), 15 B), 15 GPAaiEn d d - ain ( 10 ain ( 10 e G G Bm), 5 Bm), 5 s d d i ut ( Pout ut ( o Po 0 GPAaiEn Po 0 N -5-20 -15 -10 -5 0 5 -5-25 -20 -15 -10 -5 0 w INPUT POWER (dBm) INPUT POWER (dBm) o l - s Power Compression @ 1900 MHz [1] Power Compression @ 1900 MHz [2] r 40 40 e E (%) 30 PGoauint E (%) 30 PGoauint fi A PAE A PAE i P P l dB), 20 dB), 20 p n ( n ( m ai ai G G m), 10 m), 10 A B B d d ut ( 0 ut ( 0 o o P P -10 -10 -20 -15 -10 -5 0 5 10 -20 -15 -10 -5 0 5 10 INPUT POWER (dBm) INPUT POWER (dBm) Recommended Bias Typical Supply Current vs. Resistor Values for Idd Vdd (R1 = 390Ω, R2 = 560Ω) Vdd (V) r1 (ohms) r2 (ohms) idd (mA) Vdd (V) idd (mA) 3V 390 560 102 2.7 80 3V 1k 1.5k 85 3 102 3V 3.3k 4.7k 54 3.3 122 5V 390 560 227 4.5 200 5V 1k 1.5k 190 5 227 5V 3.3k 4.7k 124 5.5 255 Note: Amplifier will operate over full voltage range shown above. Absolute Min/Max Bias Resistor Range max min r1 (ohms) r2 (ohms) r1 (ohms) r2 (ohms) 3.9k 5.6k 270 470 [1] Vdd = 5V [2] Vdd = 3V For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 4 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Absolute Maximum Ratings Drain Bias Voltage (Vdd) +6 V T eleCTrosTATiC seNsiTiVe DeViCe m rf input power (rfiN) +5 dBm (Vdd = +5V) oBserVe HANDliNG preCAUTioNs s Channel Temperature 150 °C - Continuous pdiss (T= 85 °C) 1.3 w e (derate 20 mw/°C above 85 °C) s Thermal resistance 50 °C/w i (channel to ground paddle) o storage Temperature -65 to +150 °C N operating Temperature -40 to +85 °C w o Outline Drawing l - s r e i f i l p m A NoTes: 1. leADfrAme mATeriAl: Copper AlloY 2. DimeNsioNs Are iN iNCHes [millimeTers] 3. leAD spACiNG TolerANCe is NoN-CUmUlATiVe 4. pAD BUrr leNGTH sHAll Be 0.15mm mAXimUm. pAD BUrr HeiGHT sHAll Be 0.05mm mAXimUm. 5. pACKAGe wArp sHAll NoT eXCeeD 0.05mm. 6. All GroUND leADs AND GroUND pADDle mUsT Be solDereD To pCB rf GroUND. 7. refer To HiTTiTe AppliCATioN NoTe for sUGGesTeD lAND pATTerN. Package Information part Number package Body material lead finish msl rating package marking [3] HmC758lp3 low stress injection molded plastic sn/pb solder msl1 [1] 758 XXXX HmC758lp3e roHs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 758 XXXX [1] max peak reflow temperature of 235 °C [2] max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 5 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Pin Descriptions pin Number function Description interface schematic T 1, 3 - 6, N/C No connection required. These pins may be connected m 7 - 10, 12, 14 to rf/DC ground without affecting performance. s - This pin is DC coupled. An off-chip DC 2 rfiN e blocking capacitor is required. s i o N This pin is DC coupled. An off-chip DC 11 rfoUT blocking capacitor is required. w o This pin is used to set the DC current of the second stage l 13 BiAs2 amplifier by selection of external bias resistor. see application circuit. - s r power supply Voltage for the amplifier. Bypass capacitors are e 15 Vdd required. see application circuit. i f i l p This pin is used to set the DC current of the first m 16 BiAs1 stage amplifier by selection of external bias resistor. see application circuit. A For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 6 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Application Circuit T m s - e s i o N w o l - s r e i f i l p m A For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 7 - 7 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC758LP3 / 758LP3E v00.1108 GaAs SMT pHEMT LOW NOISE AMPLIFIER, 700 - 2200 MHz 7 Evaluation PCB T m s - e s i o N w o l - s r e i f i l p m A List of Materials for Evaluation PCB 121703 [1] The circuit board used in this application should use item Description rf circuit design techniques. signal lines should J1, J2 pCB mount smA rf Connector have 50 ohm impedance while the package ground J3, J4 DC pin leads and exposed paddle should be connected C1 220 pf Capacitor, 0402 pkg. directly to the ground plane similar to that shown. C2 10 pf Capacitor, 0402 pkg. A sufficient number of via holes should be used to C3 - C5 10 nf Capacitor, 0603 pkg. connect the top and bottom ground planes. The C6 2.2 µf Tantalum Capacitor evaluation board should be mounted to an appro- r1 390 ohm resistor, 0402 pkg. priate heat sink. The evaluation circuit board shown r2 560 ohm resistor, 0402 pkg. is available from Hittite upon request. U1 HmC758lp3(e) Amplifier pCB [2] 121701 evaluation pCB [1] reference this number when ordering complete evaluation pCB [2] Circuit Board material: rogers 4350 or Arlon 25fr. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 7 - 8 Application Support: Phone: 978-250-3343 or apps@hittite.com