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  • 型号: HMC589ST89E
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
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+xxxx $xxxx ¥xxxx

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HMC589ST89E产品简介:

ICGOO电子元器件商城为您提供HMC589ST89E由Hittite设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 HMC589ST89E价格参考。HittiteHMC589ST89E封装/规格:RF 放大器, 射频放大器 IC 通用 0Hz ~ 4GHz SOT-89-3。您可以下载HMC589ST89E参考资料、Datasheet数据手册功能说明书,资料中有HMC589ST89E 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

射频/IF 和 RFID

描述

IC MMIC AMP HBT INGAP SOT-89

产品分类

RF 放大器

品牌

Hittite Microwave Corporation

数据手册

点击此处下载产品Datasheet

产品图片

P1dB

21dBm

产品型号

HMC589ST89E

RF类型

通用

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

供应商器件封装

SOT-89

其它名称

1127-1470
1127-1470-1
1127-1470-ND

包装

剪切带 (CT)

噪声系数

4.5dB

增益

21dB

封装/外壳

TO-243AA

标准包装

1

测试频率

-

电压-电源

5V

电流-电源

82mA

频率

0Hz ~ 4GHz

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PDF Datasheet 数据手册内容提取

HMC589ST89 589ST89E / v04.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Typical Applications Features 8 The HMC589ST89 / HMC589ST89E is ideal for: P1dB Output Power: +21 dBm • Cellular / PCS / 3G Gain: 21 dB • Fixed Wireless & WLAN Output IP3: +33 dBm T E Single Supply: +5V M • CATV, Cable Modem & DBS Industry Standard SOT89 Package S • Microwave Radio & Test Equipment - • IF & RF Applications T K C Functional Diagram General Description O E L The HMC589ST89 & HMC589ST89E are InGaP HBT B Gain Block MMIC SMT amplifi ers covering DC to N 4 GHz and packaged in an industry standard I SOTL89. The amplifi er can be used as a cascadable A 50 Ohm RF or IF gain stage as well as a LO or PA G driver with up to +19 dBm P1dB output power for & O cellular/3G, FWA, CATV, microwave radio and test R equipment applications. The HMC589ST89(E) E offers 20 dB gain and +33 dBm output IP3 at 1 V GHz while requiring only 82 mA from a single I S positive supply. The HMC589ST89(E) InGaP HBT R gain block offers excellent output power and gain D stability over temperature. - B S R E Electrical Specifi cations, Vs= 5V, Rbias= 1.8 Ohm, T = +25° C I A F O Parameter Min. Typ. Max. Units I L DC - 1.0 GHz 19 21 25 dB P 1.0 - 2.0 GHz 16 19 23 dB Gain M 2.0 - 3.0 GHz 14 17 22 dB 3.0 - 4.0 GHz 13 15 20 dB A Gain Variation Over Temperature DC - 5 GHz 0.008 dB/ °C DC - 1.0 GHz 13 17 dB Input Return Loss 1.0 - 4.0 GHz 8 11 dB DC - 1.0 GHz 8 12 dB Output Return Loss 1.0 - 4.0 GHz 7 10 dB Reverse Isolation DC - 4 GHz 23 dB 0.5 - 1.0 GHz 17.5 21 dBm 1.0 - 2.0 GHz 16 19 dBm Output Power for 1 dB Compression (P1dB) 2.0 - 3.0 GHz 16 19 dBm 3.0 - 4.0 GHz 14.5 17.5 dBm 0.5 - 1.0 GHz 33 dBm Output Third Order Intercept (IP3) 1.0 - 2.0 GHz 32 dBm (Pout= 0 dBm per tone, 1 MHz spacing) 2.0 - 3.0 GHz 30.5 dBm 3.0 - 4.0 GHz 29 dBm DC - 2.0 GHz 4.0 dB Noise Figure 2.0 - 4.0 GHz 4.5 dB Supply Current (Icq) 82 102 mA Note: Data taken with broadband bias tee on device output. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 152 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC589ST89 / 589ST89E v04.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Broadband Gain & Return Loss Gain vs. Temperature 8 25 24 20 15 20 10 B) 16 NSE (d 05 SSS212112 N (dB) 12 E MT RESPO -1-05 GAI 8 ++2855 CC S -15 T -40 C - -20 4 K -25 C -30 0 O 0 1 2 3 4 5 6 7 8 0 1E 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) L B N L I Input Return Loss vs. Temperature Output Return Loss vs. Temperature A G 0 0 O & N LOSS (dB) -1-05 ++-428055 CCC OSS (dB) -1-05 ++-428055CCC VER R L UT RETU -15 S RETURN -15 DRI P N -20 -20 I - B S -25 -25 0 1 2 3 4 5 0 1 2 3 4 5 R FREQUENCY (GHz) FREQUENCY (GHz) E I O F I L P Reverse Isolation vs. Temperature Noise Figure vs. Temperature M 0 10 A ATION (dB) -1-05 ++-428055 CCC RE (dB) 68 ++-428055 CCC L U O -15 G E IS E FI 4 S S VER -20 NOI RE -25 2 -30 0 0 1 2 3 4 5 0 1 2 3 4 5 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 153 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC589ST89 / 589ST89E v04.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz P1dB vs. Temperature Psat vs. Temperature 8 24 28 24 20 20 T m) 16 m) E SM P1dB (dB 12 ++2855 CC Psat (dB 16 +25 C -40 C 12 +85 C - T -40 C 8 K 8 C 4 4 O 0 1 2 3 4 5 0 1E 2 3 4 5 L FREQUENCY (GHz) FREQUENCY (GHz) B N GaiLn, Power & OIP3 vs. Supply Voltage I A Output IP3 vs. Temperature @ 850 MHz, Rbias = 1.8 Ohms G 36 40 m) dB 32 & O 3 ( R 36 m), IP 2248 B E m) 32 at (d 20 - DRIV IP3 (dB 2248 ++-428055 CCCB S dB), P1dB (dBm), Ps 114826 GPPIP1sa3adintB S 20 N ( 0 R 0 1 2 3 4 5 GAI 4.5 5 5.5 Vs (Vdc) E FREQUENCY (GHz) I F O I L Vcc vs. Icc Over Temperature for P Fixed Vs= 5V, RBIAS= 1.8 Ohms M 90 A 88 +85 C 86 84 +25 C 82 A) c (m 80 Ic 78 76 74 72 -40 C 70 4.83 4.84 4.85 4.86 4.87 4.88 Vcc (Vdc) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 154 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC589ST89 / 589ST89E v04.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Absolute Maximum Ratings 8 Collector Bias Voltage (Vcc) +5.5 Vdc ELECTROSTATIC SENSITIVE DEVICE +10 dBm up to 1 GHz RF Input Power (RFIN)(Vcc = +5 Vdc) +8 dBm from 1-4 GHz OBSERVE HANDLING PRECAUTIONS Junction Temperature 150 °C E T Continuous Pdiss (T = 85 °C) 0.546 W M (derate 8.4 mW/°C above 85 °C) S Thermal Resistance 119 °C/W (junction to ground paddle) T - Storage Temperature -65 to +150 °C K Operating Temperature -40 to +85 °C C ESD Sensitivity (HBM) Class 1C O E L B N L Outline Drawing I A G O & R E V S I R D - B S R E NOTES: I O 1. PACKAGE BODY MATERIAL: F MOLDING COMPOUND MP-180S OR EQUIVALENT. I 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. L 3. LEAD PLATING: 100% MATTE TIN. P 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] M 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. A 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC589ST89 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H589 XXXX HMC589ST89E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] H589 XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 155 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC589ST89 / 589ST89E v04.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Pin Descriptions 8 Pin Number Function Description Interface Schematic This pin is DC coupled. 1 IN An off chip DC blocking capacitor is required. T E M S 3 OUT RF output and DC Bias (Vcc) for the output stage. - T K C These pins and package bottom 2, 4 GND O must be connected to RF/DC ground. E L B N Application Circuit L I A G & O R E V I S R D - B S R E I Note: F O 1. External blocking capacitors are required on I RFIN and RFOUT. L P 2. RBIAS provides DC bias stability over temperature. M Recommended Bias Resistor Values A for Icc = 88 mA, Rbias = (Vs - Vcc) / Icc Supply Voltage (Vs) 5V 6V 8V RBIAS VALUE 1.8 Ω 13 Ω 38 Ω RBIAS POWER RATING 1/8 W ¼ W ½ W Recommended Component Values for Key Application Frequencies Frequency (MHz) Component 50 900 1900 2200 2400 3500 4000 L1 270 nH 56 nH 24 nH 24 nH 15 nH 8.2 nH 8.2 nH C1, C2 0.01 μF 100 pF 100 pF 100 pF 100 pF 100 pF 100 pF For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 156 Application Support: Phone: 978-250-3343 or apps@hittite.com

HMC589ST89 / 589ST89E v04.0710 InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz Evaluation PCB 8 E T M S T - K C O E L B N L I A G O & R E V S I R D - B S R E I O F I L List of Materials for Evaluation PCB 116405 [1] P M The circuit board used in the fi nal application Item Description A should use RF circuit design techniques. Signal J1 - J2 PCB Mount SMA Connector lines should have 50 Ohm impedance while the J3 - J4 DC Pin package ground leads and package bottom should C1, C2 Capacitor, 0402 Pkg. be connected directly to the ground plane similar to C3 100 pF Capacitor, 0402 Pkg. that shown. A sufficient number of via holes should C4 1000 pF Capacitor, 0603 Pkg. be used to connect the top and bottom ground C5 2.2 μF Capacitor, Tantalum planes. The evaluation board should be mounted R1 Resistor, 1206 Pkg. to an appropriate heat sink. The evaluation circuit L1 Inductor, 0603 Pkg. board shown is available from Hittite upon request. U1 HMC589ST89 / HMC589ST89E PCB [2] 108370 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [3] Evaluation board tuned for 1.9 GHz operation For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 8 - 157 Application Support: Phone: 978-250-3343 or apps@hittite.com