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GBU8A产品简介:
ICGOO电子元器件商城为您提供GBU8A由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 GBU8A价格参考¥3.20-¥4.40。Fairchild SemiconductorGBU8A封装/规格:二极管 - 桥式整流器, Bridge Rectifier 单相 标准 50V 通孔 GBU。您可以下载GBU8A参考资料、Datasheet数据手册功能说明书,资料中有GBU8A 详细功能的应用电路图电压和使用方法及教程。
ON Semiconductor的GBU8A是一款桥式整流器,广泛应用于将交流电(AC)转换为直流电(DC)的电源电路中。其典型应用场景包括开关电源(SMPS)、适配器、充电器、家用电器(如电视、微波炉、洗衣机等)以及工业控制设备中的整流模块。GBU8A采用GBU封装,具有8A额定电流和1000V反向耐压,适合中高功率应用,具备良好的热稳定性和可靠性。它常用于220V或110V交流输入的整流桥位置,能够有效处理全波整流,提升电源效率。由于集成四个二极管组成单相全桥结构,简化了电路设计,减少了元件数量,提高了系统紧凑性与稳定性。此外,该器件也适用于LED照明电源、电动工具电源及小型电机驱动等需要高效AC-DC转换的场合。其耐用性和宽工作温度范围使其在工业环境和消费电子中均表现良好。
| 参数 | 数值 |
| 产品目录 | |
| 描述 | RECT BRIDGE GPP 8A 50V GBU桥式整流器 8A Bridge Rectifier |
| 产品分类 | 桥式整流器分离式半导体 |
| 品牌 | Fairchild Semiconductor |
| 产品手册 | |
| 产品图片 |
|
| rohs | 符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求 |
| 产品系列 | 二极管与整流器,桥式整流器,Fairchild Semiconductor GBU8A- |
| 数据手册 | |
| 产品型号 | GBU8A |
| PCN封装 | |
| 二极管类型 | 单相 |
| 产品 | Single Phase Bridge |
| 产品种类 | 桥式整流器 |
| 供应商器件封装 | GBU |
| 其它名称 | GBU8A-ND |
| 功率耗散 | 16 W |
| 包装 | 管件 |
| 单位重量 | 5.400 g |
| 商标 | Fairchild Semiconductor |
| 安装类型 | 通孔 |
| 安装风格 | Through Hole |
| 宽度 | 3.56 mm |
| 封装 | Tube |
| 封装/外壳 | 4-SIP,GBU |
| 封装/箱体 | GBU-4 |
| 峰值反向电压 | 50 V |
| 工厂包装数量 | 20 |
| 最大RMS反向电压 | 35 V |
| 最大反向漏泄电流 | 50 uA |
| 最大工作温度 | + 150 C |
| 最大浪涌电流 | 200 A |
| 最小工作温度 | - 55 C |
| 标准包装 | 20 |
| 正向电压下降 | 1 V |
| 正向连续电流 | 8 A |
| 电压-峰值反向(最大值) | 50V |
| 电流-DC正向(If) | 8A |
| 系列 | GBU8A |
| 长度 | 22.3 mm |
| 高度 | 18.8 mm |
GBU8A thru GBU8G Single Phase Glass Passivated V = 50 V - 400 V RRM Silicon Bridge Rectifier I = 8 A O Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High case dielectric strength of 1500 V RMS • Glass passivated chip junction • Ideal for printed circuit boards GBU Package • High surge overload rating • High temperature soldering guaranteed: 260⁰C/ 10 seconds, 0.375 (9.5mm) lead length • Not ESD Sensitive Mechanical Data Case: Molded plastic body over passivated junctions Terminals: Plated leads, solderable per MIL-STD-750 Method 2026. Mounting position: Any Maximum ratings at Tc= 25 °C, unless otherwise specified Parameter Symbol Conditions GBU8A GBU8B GBU8D GBU8G Unit Repetitive peak reverse voltage V 50 100 200 400 V RRM RMS reverse voltage V 35 70 140 280 V RMS DC blocking voltage V 50 100 200 400 V DC Operating temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C j Storage temperature T -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C stg Electrical characteristics at Tc = 25 °C, unless otherwise specified Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Parameter Symbol Conditions GBU8A GBU8B GBU8D GBU8G Unit Maximum average forward rectified I T = 100 °C 8.0 8.0 8.0 8.0 A current 1,2 O c Peak forward surge current I t = 8.3 ms, half sine 200 200 200 200 A FSM p Maximum instantaneous forward V I = 8 A 1.1 1.1 1.1 1.1 V voltage drop per leg F F Maximum DC reverse current at I Ta = 25 °C 5 5 5 5 μA rated DC blocking voltage per leg R T = 125 °C 500 500 500 500 a Rating for fusing I2t t < 8.3 ms 166 166 166 166 A2sec Typical junction capacitance per C 211 211 211 211 pF leg 3 j R 21 21 21 21 Typical thermal resistance per leg 1,2 ΘJA R 2.2 2.2 2.2 2.2 °C/W ΘJL 1 - Device mounted on 82 mm x 82 mm x 3 mm Al plate heatsink 2 - Recommended mounted position is to bolt down device on a heatsink with silicon thermal compond for maximum heat transfer using #6 screw. 3 - Measured at 1.0 MHz and applied reverse bias of 4.0 V 1 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
GBU8A thru GBU8G 2 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
GBU8A thru GBU8G Package dimensions and terminal configuration Product is marked with part number and terminal configuration. Dimensions in inches and (millimeters) 3 Apr 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
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