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F P F 1 5 September 2016 0 4 / F P F FPF1504 / FPF1504L 1 5 0 Advanced Load Management Switch 4 L — Features Description A d v  1.0 V to 3.6 V Input Voltage Operating Range The FPF1504/FPF1504L are low-RDS P-channel a n MOSFET load switches of the IntelliMAX™ family.  Typical R : c DS(ON) Integrated slew-rate control prevents excessive inrush e - 15 mΩ at V =3.3 V d IN current from the supply rails with capacitive loads L - 20 mΩ at VIN=1.8 V common in power applications. In addition, the o a - 40 mΩ at VIN=1.0 V FPF1504/FPF1504L feature output discharge capability. d  Slew Rate Control The input voltage range operates from 1.0 V to 3.6 V to M a  Output Discharge Function fulfill today's mobile device supply requirements. Switch n a  Low <1 µA Quiescent Current at VON=VIN cdoirnetcrtolyl isw bityh a lloowg-icv oinltpaugte ( OCNM pOinS) ccaopnatbrolel osfi ginntaelrsfa cainngd gem  ESD Protected: 4000 V HBM, 2000 V CDM GPIOs in embedded processors. e  GPIO/CMOS-Compatible Enable Circuitry nt S  Active HIGH and active LOW versions w i t c Applications h  Mobile Devices and Smart Phones  Portable Media Devices  Digital Cameras  Advanced Notebook, UMPC, and MID  Portable Medical Devices  GPS and Navigation Equipment Figure 1. Block Diagram Ordering Information Switch Top Input Output ON Pin Part Number (Typical) Package Mark Buffer Discharge Activity At 1.8 V IN Active FPF1504UCX G4 20 mΩ CMOS YES 4-Ball, WLCSP, 0.5 mm Pitch HIGH Active 4-Ball, WLCSP with Backside FPF1504BUCX G4 20 mΩ CMOS YES HIGH Laminate, 0.5 mm Pitch Active FPF1504LUCX GZ 20 mΩ CMOS YES 4-Ball, WLCSP, 0.5 mm Pitch LOW Active 4-Ball, WLCSP with Backside FPF1504LBUCX GZ 20 mΩ CMOS YES LOW Laminate, 0.5 mm Pitch © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11

F P F 1 Application Diagram 5 0 4 V V T o Loa d / IN OUT F C C P IN OUT F O N 1 5 GND 0 4 L — A d Figure 2. Typical Application v a Notes: n c 1. CIN=1 F, X5R, 0603, for example Murata GRM185R60J105KE26. e d 2. C =1 F, X5R, 0805, for example Murata GRM216R61A105KA01. OUT L o a d M a n Pin Configurations a g e m e n t S w i t c h Figure 3. 1 x 1 mm WLCSP Bumps Facing Down Figure 4. 1 x 1 mm WLCSP Bumps Facing Up V A1 A2 V V A2 A1 V OUT IN IN OUT GND B1 B2 ON ON B2 B1 GND Figure 5. Pin Assignments (Top View) Figure 6. Pin Assignments (Bottom View) Pin Definitions Pin # Name Description A1 V Switch Output OUT A2 V Supply Input; Input to the Power Switch IN B1 GND Ground B2 ON ON/OFF Control © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11 2

F P Absolute Maximum Ratings F 1 5 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 0 4 operable above the recommended operating conditions and stressing the parts to these levels is not recommended. / In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. F The absolute maximum ratings are stress ratings only. P F 1 Symbol Parameter Min. Max. Unit 5 0 V V , V , V to GND -0.3 4.0 V 4 IN IN OUT ON L I Maximum Continuous Switch Current 1.5 A — SW PD Power Dissipation at TA=25°C 1.0 W A d TSTG Storage Junction Temperature -65 +150 °C v a TA Operating Temperature Range -40 +85 °C n c 1S2P with 1 Thermal Via 95 e  Thermal Resistance, Junction-to-Ambient °C/W d JA 1S2P without Thermal Via 187 L o Human Body Model, a 4 JESD22-A114 d ESD Electrostatic Discharge Capability kV M Charged Device Model, 2 a JESD22-C101 n a g e m e n Recommended Operating Conditions t S The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended w i operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not t c recommend exceeding them or designing to Absolute Maximum Ratings. h Symbol Parameter Min. Max. Unit V Supply Voltage 1.0 3.6 V IN TA Ambient Operating Temperature -40 +85 °C © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11 3

F P Electrical Characteristics F 1 Unless otherwise noted, VIN=1.0 to 3.6 V, TA=-40 to +85°C; typical values are at VIN=3.3 V and TA=25°C. 50 4 Symbol Parameter Conditions Min. Typ. Max. Units / F Basic Operation P F V Supply Voltage 1.0 3.6 V 1 IN 5 0 Off Supply FPF1504 VON=GND, VOUT=Open 0.25 4 I L Q(OFF) Current FPF1504L VON= VIN, VOUT=Open 0.3 — Off Switch FPF1504 VON=GND, VOUT=GND 0.25 A ISD(OFF) Current d FPF1504L V = V , V =GND 0.3 v ON IN OUT μA a n I =0 mA, V =3.6 V, V =V 0.08 OUT IN ON IN c FPF1504 e Quiescent IOUT=0 mA, VON=VIH(MIN) 0.75 d IQ Current L IOUT=0 mA, VIN=3.6 V, VON=GND 0.08 o FPF1504L a I =0 mA, V =V 0.95 d OUT ON IL(MAX) M VIN=3.3 V, IOUT=200 mA, TA=25°C 15 30 a n V =1.8 V, I =200 mA, T =25°C 20 40 a IN OUT A g e R On Resistance V =1.5 V, I =200 mA, T =25°C 30 mΩ ON IN OUT A m V =1.0 V, I =200 mA, T =25°C 40 80 e IN OUT A n t VIN=1.8 V, IOUT=200 mA, TA=85°C(3) 35 50 S w RPD OReustpisutta Dncisec harge Pull-Down VON=0 V or VIN, IOUT=-20 mA 65 95 Ω itc h On Input Logic V FPF1504 0.8 IH High Voltage V On Input Logic V FPF1504 0.3 IL Low Voltage I On Input Leakage V =V or GND 1 μA ON ON IN Dynamic Characteristics Turn-On tDON Delay(4) FPF1504 80 V Rise R =10 Ω, C =0.1 µF, V =3.3 V, t OUT FPF1504 L L IN 130 μs R Time(4) T =25°C A t Turn-On Time(4) FPF1504 210 ON FPF1504 70 100 Turn-On tDON Delay(4) FPF1504L 95 FPF1504 110 150 V Rise R =500 Ω, C =0.1 µF, V =3.3 V, tR TiOmUeT(4) TL=25°C L IN μs FPF1504L A 115 FPF1504 180 250 t Turn-On Time(4) ON FPF1504L 210 Continued on the following page… © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11 4

F P Electrical Characteristics (Continued) F 1 5 Unless otherwise noted, VIN=1.0 to 3.6 V, TA=-40 to +85°C; typical values are at VIN=3.3 V and TA=25°C. 04 Symbol Parameter Conditions Min. Typ. Max. Units / F P Dynamic Characteristics (Continued) F 1 Turn-Off 5 tDOFF Delay(4) FPF1504 25 30 04 L t V Fall Time(4) FPF1504 RL=10 Ω, CL=0.1 µF, VIN=3.3 V, 2 μs — F OUT TA=25°C A d tOFF Turn-Off Time(4) FPF1504 27 va n c Turn-Off FPF1504 25 e tDOFF Delay(4) FPF1504L 2 d L o tF VOUT Fall Time(4) FFPPFF11550044L RTAL==2550°0C Ω , CL=0.1 µF, VIN=3.3 V, 1124 μs ad M FPF1504 37 a t Turn-Off Time(4) n OFF FPF1504L 16 a g Notes: e m 3. This parameter is guaranteed by design and characterization; not production tested. e 4. tDON/tDOFF/tR/tF are defined in Figure 7. n 5. Output discharge path is enabled during off. t S w i t Timing Diagram – FPF1504 c h Notes: 6. t =t + t . ON R DON 7. t =t + t . OFF F DOFF Figure 7. Timing Diagram for FPF1504 © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11 5

F P Typical Performance Characteristics for FPF1504 F 1 Applicable to active high version only. 5 0 4 / A) A) F NT (n NT (n PF TDOWN CURRE DOWN CURRE 1504L — U T H U S H A VIN SN d VI v a n c Figure 8. Shutdown Current vs. Temperature Figure 9. Shutdown Current vs. Supply Voltage e d L o a d M a n a g e m e n t S w i t Figure 10. Off Supply Current vs. Temperature Figure 11. Off Supply Current vs. Supply Voltage c h nt (nA) nt (nA) e e pply Curr ply Curr u p S u Q S I Q I Figure 12. Quiescent Current vs. Temperature Figure 13. Quiescent Current vs. Supply Voltage (V =V ) ON IN Figure 14. R vs. Temperature Figure 15. R vs. Supply Voltage ON ON © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11 6

F P Typical Performance Characteristics for FPF1504 F 1 Applicable to active high version only. 5 0 4 / F P F 1 5 0 4 L — A d v a n c Figure 16. V Rise/Fall Times vs. Temperature Figure 17. V Turn-On/Turn-Off Delays OUT OUT e (R =10 Ω) vs. Temperature (R =10 Ω) d L L L o a d M a n a g e m e n t S w i t Figure 18. V Rise/Fall Time vs. Temperature Figure 19. V Turn-On/Turn-Off Delays c OUT OUT h (RL=500 Ω) vs. Temperature (RL=500 Ω) Vin:3.3V, 1V/DIV Vin:3.3V, 1V/DIV 25C 25C Vout:3.3V, 1V/DIV Vout:3.3V, 1V/DIV IOUT:100mA/DIV IOUT:100mA/DIV ON:0-2V, 2V/DIV ON:2-0V, 2V/DIV TIME:100us/DIV TIME:10us/DIV Figure 20. Turn-On Response Figure 21. Turn-Off Response (V =3.3 V, C =0.1 µF, R =10 Ω) (V =3.3 V, C =0.1 µF, R =10 Ω) IN OUT L IN OUT L Vin:3.3V, 1V/DIV Vin:3.3V, 1V/DIV 25C 25C Vout:3.3V, 1V/DIV Vout:3.3V, 1V/DIV IOUT:10mA/DIV IOUT:10mA/DIV ON:0-2V, 2V/DIV ON:2-0V, 2V/DIV TIME:100us/DIV TIME:10us/DIV Figure 22. Turn-On Response Figure 23. Turn-Off Response (V =3.3 V, C =0.1 µF, R =500 Ω) (V =3.3 V, C =0.1 µF, R =500 Ω) IN OUT L IN OUT L © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11 7

F P Application Information F 1 Input Capacitor The same equation works for a device with a pull-down 5 0 IntelliMAX™ switches don’t require an input capacitor. output resistor, then RL is replaced by a parallel 4 connected pull-down and external output resistor / To reduce device inrush current, a 0.1 µF ceramic F combination, as follows: capacitor, C , is recommended close to the VIN pin. A P IN F hvoiglthaegre vdarloupe eoxfp CerINie nccaend b aes uthsee ds wtoit cfhu ritsh etur rnreeddu ocne inthtoe tF  RLRPD CL2.2 (2) 15 a large capacitive load. RL RPD 04 L where t is 90% to 10% fall time, R is output load, F L Output Capacitor R is output pull-down resistor (65  typical, and C — PD L IntelliMAX™ switches work without an output capacitor. is the output capacitor. A d If the applications parasitic board inductance forces v V below GND when switching off, a 0.1 µF capacitor, a OUT n C , should be placed between V and GND. OUT OUT c e d Fall Time L o Device output fall time can be calculated based on RC a constant of external components as follows: d M tF RLCL2.2 (1) a n a where tF is 90% to 10% fall time, RL is output, g load and C is output capacitor. e L m e n t Recommended Land Pattern and Layout S w i For best thermal performance and minimal inductance the device as possible. Below is a recommended layout tc and parasitic effects, it is recommended to keep input for this device to achieve optimum performance. h and output traces short and the capacitors as close to Figure 24. Recommended Land Pattern and Layout © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11 8

F P F 1 The following information applies to the WLCSP package dimensions on the next page: 5 0 Product-Specific Dimensions 4 / F Product D E X Y P F FPF1504UCX 1 5 FPF1504BUCX 0 960 µm ±30 µm 960 µm ±30 µm 0.230 mm 0.230 mm 4 FPF1504LUCX L — FPF1504LBUCX A d v a n c e d L o a d M a n a g e m e n t S w i t c h © 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FPF1504 / FPF1504L • Rev. 1.11 9

0.03 C F E A 2X B 0.50 (cid:11)(cid:145)(cid:19)(cid:17)(cid:21)(cid:24)(cid:19)(cid:12) BottomCuPad 0.50 PINA1AREA D (cid:11)(cid:145)(cid:19)(cid:17)(cid:22)(cid:24)(cid:19)(cid:12) 0.03 C SolderMask 2X TOPVIEW RECOMMENDEDLANDPATTERN (NSMDPADTYPE) 0.06 C (cid:19)(cid:17)(cid:22)(cid:22)(cid:21)(cid:147)(cid:19)(cid:17)(cid:19)(cid:20)(cid:27) 0.625 0.05 C 0.539 (cid:19)(cid:17)(cid:21)(cid:24)(cid:19)(cid:147)(cid:19)(cid:17)(cid:19)(cid:21)(cid:24) C SEATINGPLANE D SIDEVIEWS 0.005 C A B NOTES: 0.50 (cid:145)(cid:19)(cid:17)(cid:22)(cid:20)(cid:24)(cid:147)(cid:19)(cid:17)(cid:19)(cid:21)(cid:24) A.NOJEDECREGISTRATIONAPPLIES. 4X B.DIMENSIONSAREINMILLIMETERS. B (cid:11)(cid:60)(cid:12)(cid:147)(cid:19)(cid:17)(cid:19)(cid:20)(cid:27) C.DIMENSIONSANDTOLERANCESPER 0.50 A ASMEY14.5M,2009. 1 2 F D.DATUMCISDEFINEDBYTHESPHERICAL (cid:11)(cid:59)(cid:12)(cid:147)(cid:19)(cid:17)(cid:19)(cid:20)(cid:27) CROWNSOFTHEBALLS. E.PACKAGENOMINALHEIGHTIS582MICRONS (cid:3)(cid:3)(cid:3)(cid:3)(cid:3)(cid:147)(cid:23)(cid:22)(cid:3)(cid:48)(cid:44)(cid:38)(cid:53)(cid:50)(cid:49)(cid:54)(cid:3)(cid:11)(cid:24)(cid:22)(cid:28)(cid:16)(cid:25)(cid:21)(cid:24)(cid:3)(cid:48)(cid:44)(cid:38)(cid:53)(cid:50)(cid:49)(cid:54)(cid:12)(cid:17) BOTTOMVIEW F.FORDIMENSIONSD,E,X,ANDYSEE PRODUCTDATASHEET. G.DRAWINGFILENAME:MKT-UC004ABrev3.

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: FPF1504LUCX FPF1504LBUCX