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F D D 6 7 March 2015 9 6 FDD6796A / FDU6796A_F071 A / ® F N-Channel PowerTrench MOSFET D U 25 V, 5.7 mΩ 6 7 Features General Description 9 A (cid:132) Max rDS(on) = 5.7 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to _F improve the overall efficiency of DC/DC converters using either 0 (cid:132) Max rDS(on) = 15.0 mΩ at VGS = 4.5 V, ID = 15.2 A synchronous or conventional switching PWM controllers. It has 7 1 been optimized for low gate charge, low r and fast (cid:132) 100% UIL tested DS(on) N switching speed. - (cid:132) RoHS Compliant C Applications h a n (cid:132) Vcore DC-DC for Desktop Computers and Servers n e (cid:132) VRM for Intermediate Bus Architecture l P o w e r T r e D n c h ® D M G O G G S D F S E S T Short-Lead I-PAK D-PAK (TO-251AA) S (TO-252) MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 40 C -Continuous (Silicon limited) T = 25 °C 67 I C A D -Continuous T = 25 °C (Note 1a) 20 A -Pulsed 150 E Single Pulse Avalanche Energy (Note 3) 40 mJ AS Power Dissipation T = 25 °C 42 P C W D Power Dissipation T = 25 °C (Note 1a) 3.7 A T , T Operating and Storage Junction Temperature Range -55 to +175 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 40 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD6796A FDD6796A D-PAK (TO-252) 13 ’’ 16 mm 2500 units FDU6796A FDU6796A_F071 TO-251AA N/A(Tube) N/A 75 units ©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDD6796A / FDU6796A_F071 Rev. 1.3

F D Electrical Characteristics T = 25 °C unless otherwise noted D J 6 7 Symbol Parameter Test Conditions Min Typ Max Units 9 6 Off Characteristics A BVDSS Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 25 V / F ∆BV Breakdown Voltage Temperature D ∆TDSS Coefficient ID = 250 µA, referenced to 25 °C 16 mV/°C U J 6 IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1 µA 7 9 IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA A _ On Characteristics F 0 V Gate to Source Threshold Voltage V = V , I = 250 µA 1.0 1.9 3.0 V 7 GS(th) GS DS D 1 ∆VGS(th) Gate to Source Threshold Voltage I = 250 µA, referenced to 25 °C -6 mV/°C N ∆TJ Temperature Coefficient D -C VGS = 10 V, ID = 20 A 4.3 5.7 h r Static Drain to Source On Resistance V = 4.5 V, I = 15.2 A 11.1 15.0 mΩ a DS(on) GS D n V = 10 V, I = 20 A, T = 150 °C 6.5 8.6 n GS D J e gFS Forward Transconductance VDS = 5 V, ID = 20 A 118 S l P Dynamic Characteristics o w C Input Capacitance 1336 1780 pF e Ciss Output Capacitance VDS = 13 V, VGS = 0 V, 298 400 pF rT oss f = 1 MHz r C Reverse Transfer Capacitance 266 400 pF e rss n R Gate Resistance 1.2 Ω c g h ® Switching Characteristics M td(on) Turn-On Delay Time 8 16 ns O tr Rise Time VDD = 13 V, ID = 20 A, 7 14 ns SF td(off) Turn-Off Delay Time VGS = 10 V, RGEN = 6 Ω 19 34 ns E t Fall Time 4 10 ns T f Q Total Gate Charge V = 0 V to 10 V 24 34 nC g GS Qg Total Gate Charge VGS = 0 V to 5 V VDD = 13 V, 14 20 nC Qgs Gate to Source Charge ID = 20 A 4.0 nC Q Gate to Drain “Miller” Charge 5.7 nC gd Drain-Source Diode Characteristics V = 0 V, I = 3.1 A (Note 2) 0.8 1.2 V Source to Drain Diode Forward Voltage GS S V SD V = 0 V, I = 20 A (Note 2) 0.9 1.3 GS S t Reverse Recovery Time 15 27 ns rr I = 20 A, di/dt = 100 A/µs Q Reverse Recovery Charge F 4 10 nC rr Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a)40 °C/W when mounted on a b) 96 °C/W when mounted on 1 in2 pad of 2 oz copper a minimum pad 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: EAS of 40 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 9 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 21 A. ©2009 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com FDD6796A / FDU6796A_F071 Rev. 1.3

F D Typical Characteristics D T = 25 °C unless otherwise noted J 6 7 9 6 150 4 A VGS = 8 V CE PULSE DURATION = 80 µs / RAIN CURRENT (A)1269000 VGS = 10 V VGS = 6 V VVGGS S= = 4 4.5 V V NORMALIZEDOURCE ON-RESISTAN 23 VGS = 3.5 V DUTVVYGG SCS Y== C8 4L VVE = V0G.5S% =V M6G SAV X= 4.5 V FDU679A_F D S 0 , ID 30 PULSE DURATIONV G=S 8 =0 3µ.s5 V AIN TO 1 VGS = 10 V 71 N R DUTY CYCLE = 0.5% MAX D - 0 0 C 0.0 0.5 1.0 1.5 2.0 2.5 0 30 60 90 120 150 h VDS, DRAIN TO SO URCE VOLTAGE (V) ID, DRAIN C URRENT (A) an n e Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance l vs Drain Current and Gate Voltage P o w e 1.8 20 rT ANCE 1.6 IVDG =S 2=0 1 A0 V )mΩ PDUULTSYE C DYUCRLEA T=I O0.N5 %= 8M0A µXs ren NORMALIZED TO SOURCE ON-RESIST 111...024 rDRAIN TO ,DS(on)(RCE ON-RESISTANCE 11055 ID = 20 A TJ = 150 oC chMOSFET® AIN 0.8 SOU TJ = 25 oC R D 0.6 0 -75 -50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10 TJ, JUNCTION TEM PERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to vs Junction Temperature Source Voltage 150 200 PULSE DURATION = 80 µs A) 100 DUTY CYCLE = 0.5% MAX T ( 120 N A) VDS = 3 V RE VGS = 0 V T ( UR URREN 90 RAIN C 10 TJ = 175 oC C D RAIN 60 TJ = 175 oC ERSE 1 TJ = 25 oC TJ = -55 oC D V , D 30 RE I TJ = 25 oC TJ = -55 oC I, S 0 0.1 0 1 2 3 4 5 6 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOU RCE VOLTAGE (V) VSD, BODY DIODE FOR WARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FDD6796A / FDU6796A_F071 Rev. 1.3

F D Typical Characteristics T = 25 °C unless otherwise noted D J 6 7 9 6 10 5000 A E (V) ID = 20 A / F G 8 E VOLTA 6 VDD = 10 V CE (pF)1000 Ciss DU67 O SOURC 4 VDD = 13 V VDD = 16 V PACITAN Coss 9A_F T A 0 E C 7 AT 2 1 V, GGS 0 100 fV =G S1 =M 0H Vz Crss N-C 0 5 10 15 20 25 30 0.1 1 10 30 h Qg, GATE CH ARGE (nC) VDS, DRAIN TO SOU RCE VOLTAGE (V) an n e Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain l to Source Voltage P o w e 100 80 r T r e ENT (A) 40 NT (A) 60 nch CURR TJ = 125 oC URRE VGS = 10 V M® HE 10 N C 40 O AVALANC TJ = 150 oC TJ = 25 oC , IDRAID20 Limited by Package SFET , S RθJC = 3.6 oC/W VGS = 4.5 V A I 1 0 0.001 0.01 0.1 1 10 100 25 50 75 100 125 150 175 tAV, TIME IN AVA LANCHE (ms) TC, CASE TEMPERATURE (oC) Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain Switching Capability Current vs Case Temperature 200 2000 100 10 us W)1000 VGS = 10 V R ( T (A) OWE N CURREN 10 TLIHMISIT AERDE BAY I SrD S(on) 110 m0 sus ANSIENT P 100 SRTCIθNJ =CG 2=L5 E3 o .PC6 UoCLS/WE AI R DR 1 SINGLE PULSE 10 ms K T I, D TRTJCθ J ==C M 2=5 A3 Xo.C6 R oCA/TWED 1D0C0 ms , PEA)PK 0.1 P( 10 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 1 10 VDS, DRAIN to SOU RCE VOLTAGE (V) t, PULSE WIDT H (sec) Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum Operating Area Power Dissipation ©2009 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com FDD6796A / FDU6796A_F071 Rev. 1.3

F D Typical Characteristics T = 25 °C unless otherwise noted D J 6 7 9 6 A 2 / F 1 DUTY CYCLE-DESCENDING ORDER D U AL D = 0.5 6 M C 0.2 7 THER E,ZJθ 00..105 PDM 9A MALIZED MPEDANC 0.1 00..0021 t1t2 _F071 NORI SINGLE PULSE NDOUTTYE SF:ACTOR: D = t1/t2 N R = 3.6 oC/W PEAK TJ = PDM x ZθJC x RθJc + TC -C θJC h a 0.01 n 10-5 10-4 10-3 10-2 10-1 1 n e t, RECTANGULAR PULSE DURATION (sec) l P Figure 13. Junction-to-Case Transient Thermal Response Curve o w e 2 r T 1 r e DUTY CYCLE-DESCENDING ORDER n L c A h ALIZED THERM PEDANCE,ZJAθ 00.0.11 D = 000000......210005521 PDM t1 MOSF® ORMIM NOTES: t2 ET N SINGLE PULSE DUTY FACTOR: D = t1/t2 0.001 RθJA = 96 oC/W PEAK TJ = PDM x ZθJA x RθJA + TA (Note 1b) 0.0005 10-4 10-3 10-2 10-1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FDD6796A / FDU6796A_F071 Rev. 1.3

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1