DSP8-08AS = Standard Rectifier V 2x 800V RRM = I 8A FAV = V 1.08V F Phase leg Part number DSP8-08AS Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 (D2Pak) ● Planar passivated chips ● Diode for main rectification ● Industry standard outline ● Very low leakage current ● For single and three phase ● RoHS compliant ● Very low forward voltage drop bridge configurations ● Epoxy meets UL 94V-0 ● Improved thermal behaviour Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

DSP8-08AS Rectifier Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 900 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 800 V RRM VJ I reverse current V = 8 0 0 V T = 25°C 10 µA R R VJ V = 8 0 0 V T = 1 5 0 °C 0.2 mA R VJ V forward voltage drop I = 8 A T = 25°C 1.16 V F F VJ I = 1 6 A 1.35 V F I = 8 A T = 1 5 0 °C 1.08 V F VJ I = 1 6 A 1.34 V F I average forward current T = 1 6 0 °C T = 1 7 5 °C 8 A FAV C VJ rectangular d =0.5 V threshold voltage T = 1 7 5 °C 0.79 V F0 VJ for power loss calculation only r slope resistance 33 mΩ F R thermal resistance junction to case 1.5 K/W thJC R thermal resistance case to heatsink 0.25 K/W thCH P total power dissipation T = 25°C 100 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C 120 A FSM VJ t = 8,3 ms; (60 Hz), sine V = 0 V 130 A R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 100 A VJ t = 8,3 ms; (60 Hz), sine V = 0 V 110 A R I²t value for fusing t = 10 ms; (50 Hz), sine T = 45°C 72 A²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 70 A²s R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 50 A²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 50 A²s R C junction capacitance V = 4 0 0 V; f = 1 MHz T = 25°C 4 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

DSP8-08AS Package TO-263 (D2Pak) Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 25 A RMS T virtual junction temperature -55 175 °C VJ T operation temperature -55 150 °C op T storage temperature -55 150 °C stg Weight 2 g F mounting force with clip 20 60 N C Product Marking PartNo. XXXXXXXXX IXYS Logo Zyyww AssemblyLine DateCode 000000 AssemblyCode Ordering Ordering Number Marking on Product Delivery Mode Quantity Code No. Standard DSP8-08AS DSP8-08AS Tape & Reel 800 504315 Alternative DSP8-08AS-TUB DSP8-08AS Tube 50 465445 Similar Part Package Voltage class DSP8-08S TO-263AB (D2Pak) (2) 800 DSP8-08A TO-220AB (3) 800 DSP8-12AS TO-263AA (D2Pak) (3) 1200 DSP8-12S TO-263AB (D2Pak) (2) 1200 DSP8-12A TO-220AB (3) 1200 DSP8-12AC ISOPLUS220AB (3) 1200 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Rectifier 0 0 V threshold voltage 0.79 V 0 max R slope resistance * 30 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

DSP8-08AS Outlines TO-263 (D2Pak) Millimeter Inches Dim. min max min max A 4.06 4.83 0.160 0.190 A1 typ.0.10 typ.0.004 W A A2 2.41 0.095 b 0.51 0.99 0.020 0.039 c2 Supplier E 1 Option b2 1.14 1.40 0.045 0.055 L c 0.40 0.74 0.016 0.029 c2 1.14 1.40 0.045 0.055 D 8.38 9.40 0.330 0.370 1 A1 D D1 8.00 8.89 0.315 0.350 D D2 2.5 0.098 H 4 E 9.65 10.41 0.380 0.410 1 2 3 E1 6.22 8.50 0.245 0.335 e 2,54BSC 0,100BSC e1 4.28 0.169 L H 14.61 15.88 0.575 0.625 c L 1.78 2.79 0.070 0.110 2x e 3x b2 3x b L1 1.02 1.68 0.040 0.066 typ. typ. W 0.040 0.002 E1 0.02 0.0008 Alldimensions conformwith and/orwithinJEDECstandard. 1 2/4 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

DSP8-08AS Rectifier 20 100 102 50Hz,80%V V =0 V RRM R 16 80 T =45°C VJ IF 12 IFSM TVJ= 45°C I2t T = 150°C VJ [A] 8 125°C [A] 25°C 60 [A2s] TVJ= 150°C T = 150°C VJ 4 0 40 101 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0.01 0.1 1 1 2 3 4 5 6 78 10 V [V] t [s] t [ms] F Fig.1 Forwardcurrentversus Fig.2 Surgeoverloadcurrent Fig.3 I2tversustimeperdiode voltagedropperdiode 28 16 R : DC= thJA 24 1 4 K/W 0.5 DC= 8 K/W 0.4 1 10 K/W 20 12 0.5 12 K/W I 0.33 F(AV)M 0.17 Ptot 00.3.43 1260 KK//WW 16 0.08 0.17 [A] 8 0.08 12 [W] 8 4 4 0 0 0 2 4 6 8 10 12 0 25 50 75 100 125 150 175 200 0 50 100 150 200 I [A] T [°C] T [°C] F(AV)M amb C Fig.4 Powerdissipationvs.directoutputcurrentandambienttemperature Fig.5 Max.forwardcurrentvs. casetemperature 1.6 1.2 ConstantsforZ calculation: thJC Z thJC i R (K/W) t (s) thi i 0.8 1 0.155 0.0005 2 0.332 0.0095 [K/W] 3 0.713 0.17 0.4 4 0.3 0.8 5 0.00001 0.00001 0.0 1 10 100 1000 10000 t [ms] Fig.6 Transientthermalimpedancejunctiontocase IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130107b ©2013 IXYS all rights reserved

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