DSP45-16A Standard Rectifier V =2x1600V RRM I = 45A FAV V = 1.23V F Phase leg Part number DSP45-16A Backside: anode/cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Diode for main rectification ● Industry standard outline ● Very low leakage current ● For single and three phase ● RoHS compliant ● Very low forward voltage drop bridge configurations ● Epoxy meets UL 94V-0 ● Improved thermal behaviour IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d ©2013 IXYS all rights reserved

DSP45-16A Rectifier Ratings Symbol Definition Conditions min. typ. max. Unit V max. non-repetitive reverse blocking voltage T = 25°C 1700 V RSM VJ V max. repetitive reverse blocking voltage T = 25°C 1600 V RRM VJ I reverse current V = 1 6 0 0 V T = 25°C 40 µA R R VJ V = 1 6 0 0 V T = 1 5 0 °C 1.5 mA R VJ V forward voltage drop I = 4 5 A T = 25°C 1.26 V F F VJ I = 9 0 A 1.57 V F I = 4 5 A T = 1 5 0 °C 1.23 V F VJ I = 9 0 A 1.66 V F I average forward current T = 1 3 0 °C T = 1 7 5 °C 45 A FAV C VJ 180° sine V threshold voltage T = 1 7 5 °C 0.81 V F0 VJ for power loss calculation only r slope resistance 9.1 mΩ F R thermal resistance junction to case 0.55 K/W thJC R thermal resistance case to heatsink 0.25 K/W thCH P total power dissipation T = 25°C 270 W tot C I max. forward surge current t = 10 ms; (50 Hz), sine T = 45°C 480 A FSM VJ t = 8,3 ms; (60 Hz), sine V = 0 V 520 A R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 410 A VJ t = 8,3 ms; (60 Hz), sine V = 0 V 440 A R I²t value for fusing t = 10 ms; (50 Hz), sine T = 45°C 1.15 kA²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 1.13 kA²s R t = 10 ms; (50 Hz), sine T = 1 5 0 °C 840 A²s VJ t = 8,3 ms; (60 Hz), sine V = 0 V 805 A²s R C junction capacitance V = 4 0 0 V; f = 1 MHz T = 25°C 18 pF J R VJ IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d ©2013 IXYS all rights reserved

DSP45-16A Package TO-247 Ratings Symbol Definition Conditions min. typ. max. Unit I RMS current per terminal 70 A RMS T virtual junction temperature -40 175 °C VJ T operation temperature -40 150 °C op T storage temperature -40 150 °C stg Weight 6 g M mounting torque 0.8 1.2 Nm D F mounting force with clip 20 120 N C Product Marking Logo IXYS PartNo. XXXXXXXXX AssemblyLine Zyyww abcd AssemblyCode DateCode Ordering Part Number Marking on Product Delivery Mode Quantity Code No. Standard DSP45-16A DSP45-16A Tube 30 480665 Similar Part Package Voltage class DSP45-16AZ TO-268AA (D3Pak) (2HV) 1600 DSP45-16AR ISOPLUS247 (3) 1600 DSP45-12A TO-247AD (3) 1200 DSP45-12AZ TO-268AA (D3Pak) (2HV) 1200 DSP45-18A TO-247AD (3) 1800 Equivalent Circuits for Simulation * on die level T V J =175°C I V R Rectifier 0 0 V threshold voltage 0.81 V 0 max R slope resistance * 6.5 mΩ 0 max IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d ©2013 IXYS all rights reserved

DSP45-16A Outlines TO-247 A D2 E A2 ØP Ø P1 Q S Sym. Inches Millimeter min. max. min. max. A 0.185 0.209 4.70 5.30 D1 A1 0.087 0.102 2.21 2.59 D A2 0.059 0.098 1.50 2.49 D 0.819 0.845 20.79 21.45 2x E2 E 0.610 0.640 15.48 16.24 4 E2 0.170 0.216 4.31 5.48 e 0.215BSC 5.46BSC 1 2 3 L 0.780 0.800 19.80 20.30 L1 - 0.177 - 4.49 L1 E1 ØP 0.140 0.144 3.55 3.65 Q 0.212 0.244 5.38 6.19 S 0.242BSC 6.14BSC L b 0.039 0.055 0.99 1.40 b2 0.065 0.094 1.65 2.39 b4 0.102 0.135 2.59 3.43 c 0.015 0.035 0.38 0.89 2x b2 C D1 0.515 - 13.07 - 3x b D2 0.020 0.053 0.51 1.35 b4 A1 E1 0.530 - 13.45 - 2x e ØP1 - 0.29 - 7.39 1 2 3 IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d ©2013 IXYS all rights reserved

DSP45-16A Rectifier 80 400 1200 50Hz, 80% V V = 0V RRM R 70 1000 360 60 T =45°C 800 T =45°C 50 VJ VJ I 320 I2t F 40 IFSM 600 [A] 30 280 [A2s] T =150°C [A] 400 VJ 20 T =150°C 240 VJ T =150°C 200 10 125°C VJ 25°C 0 200 0 0.5 1.0 1.5 0.001 0.01 0.1 1 1 2 3 4 5 6 78910 V [V] t [s] t [ms] F Fig.1 Forwardcurrentversus Fig.2 Surgeoverloadcurrent Fig.3 I2tversustimeperdiode voltagedropperdiode 80 80 R : thJA DC= 0.6 KW 60 1 0.8 KW 60 0.5 1 KW 0.4 2 KW Ptot 0.33 4 KW IdAVM 0.17 8 KW 40 40 0.08 [A] DC= [W] 1 0.5 20 20 0.4 0.33 0.17 0.08 0 0 0 10 20 30 40 50 0 50 100 150 200 0 50 100 150 200 I [A] T [°C] T [°C] dAVM amb C Fig.4 Powerdissipationvs.directoutputcurrent&ambienttemperature Fig.5 Max.forwardcurrentvs. casetemperature 0.6 0.5 0.4 Z th 0.3 [K/W] i R t i i 0.2 1 0.033 0.0006 2 0.095 0.0039 0.1 3 0.164 0.033 4 0.258 0.272 0.0 1 10 100 1000 10000 t [ms] Fig.6Transientthermalimpedancejunctiontocase IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20130215d ©2013 IXYS all rights reserved

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