Doc No. TT4-EA-11588 Revision. 3 Product Standards Transistors with Built-in Resistor DRA5144E0L DRA5144E0L Silicon PNP epitaxial planar type For digital circuits Unit: mm 2.0 Complementary to DRC5144E 0.3 0.13 DRA2144E in SMini3 type package 3  Features  Low collector-emitter saturation voltage Vce(sat)  Halogen-free / RoHS compliant 1.252.1 (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2  Marking Symbol: LL 0.9 (0.65)(0.65)  Packaging 1.3 Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1. Base 2. Emitter 3. Collector Panasonic SMini3-F2-B JEITA SC-85  Absolute Maximum Ratings Ta = 25 C Code ― Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -50 V Collector-emitter voltage (Base open) VCEO -50 V Internal Connection Collector current IC -100 mA Total power dissipation PT 150 mW R C 1 Junction temperature Tj 150 °C B R Operating ambient temperature Topr -40 to +85 °C 2 E Storage temperature Tstg -55 to +150 °C Resistance R1 47 k value R2 47 k  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10 μA, IE = 0 -50 V Collector-emitter voltage (Base open) VCEO IC = -2 mA, IB = 0 -50 V Collector-base cutoff current (Emitter open) ICBO VCB = -50 V, IE = 0 -0.1 μA Collector-emitter cutoff current (Base open) ICEO VCE = -50 V, IB = 0 -0.5 μA Emitter-base cutoff current (Collector open) IEBO VEB = -6 V, IC = 0 -0.1 mA Forward current transfer ratio hFE VCE = -10 V, IC = -5 mA 80 - Collector-emitter saturation voltage VCE(sat) IC = -10 mA, IB = -0.5 mA -0.25 V Vi(on) VCE = -0.2 V, IC = -5 mA -3.6 V Input voltage Vi(off) VCE = -5 V, IC = -100 μA -0.8 V Input resistance R1 -30% 47 +30% k Resistance ratio R1/R2 0.8 1.0 1.2 - Note)1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 1 of 3 Established :2009-10-15 Revised :2014-02-21

Doc No. TT4-EA-11588 Revision. 3 Product Standards Transistors with Built-in Resistor DRA5144E0L Technical Data ( reference ) PT - Ta IC - VCE 200 -0.12 W) Ta = 25 ℃ IB = -800 μA -700 μA ation PT (m 150 ent IC (A) -0-0.0.18 ---456000000 μμμAAA wer dissip 100 ctor curr --00..0046 --230000 μμAA al po 50 Colle -0.02 -100 μA ot T 0 -0 0 20 40 60 80 100 120 140 160 180 200 -0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta (℃) Collector-emitter voltage VCE (V) hFE - IC VCE(sat) - IC -10 300 E VCE = -10 V IC/IB = 20 F ge o h 250 Ta = 85 ℃ olta ent transfer rati 125000 25 ℃ mitter saturation vVCE(sat) (V) -1 Ta = 85 ℃ 25 ℃ curr 100 -40 ℃ or-e -0.1 d ct orwar 50 Colle -40 ℃ F 0 -0.01 -0.0001 -0.001 -0.01 -0.1 -0.0001 -0.001 -0.01 -0.1 Collector current IC (A) Collector current IC (A) Io - VIN VIN - Io -1.0E-02 -100 Vo = -5 V Vo = -0.2 V A)-1.0E-03 Ta = 85 ℃ V) o ( N ( -10 ent I e VI Ta = -40 ℃ 25 ℃ urr-1.0E-04 25 ℃ ag ut c volt utp put -1 O-1.0E-05 n 85 ℃ I -40 ℃ -1.0E-06 -0.1 -0 -0.5 -1 -1.5 -2 -0.0001 -0.001 -0.01 -0.1 Input voltage VIN (V) Output current Io (A) Page 2 of 3 Established :2009-10-15 Revised :2014-02-21

Doc No. TT4-EA-11588 Revision. 3 Product Standards Transistors with Built-in Resistor DRA5144E0L SMini3-F2-B Unit: mm 2.0±0.2 +0.05 +0.05 0.13-0.02 0.30-0.02 3 0 1 1 . . 0 0 ± ± 5 1 2 . . 2 1 ) ° 5 1 2 ( 0 (0.65) (0.65) 05 . 0 ± 1.3±0.1 5 2 4 . 0 (5°) ) 9 4 9) 0.1 0. 8 ± ( (0. 0.9 1 . 0 o t 0  Land Pattern (Reference) (Unit: mm) 0.9 8 . 0 9 . 1 1.3 Page 3 of 3 Established :2009-10-15 Revised :2014-02-21

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