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C N Y 1 October 2014 7 X M , C CNY171M, CNY172M, CNY173M, CNY174M, N Y 1 CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, 7 F X MOC8106M M , 6-Pin DIP High BV Phototransistor Optocouplers M CEO O C 8 Features Description 1 0 6 ■ High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, The CNY17XM, CNY17FXM, and MOC8106M devices M MOC8106M) consist of a gallium arsenide infrared emitting diode — ■ Closely Matched Current Transfer Ratio (CTR) coupled with an NPN phototransistor in a dual in-line 6 Minimizes Unit-to-Unit Variation package. - P ■ Current Transfer Ratio In Select Groups i Package Outlines n ■ Very Low Coupled Capacitance Along With D No Chip-to-Pin 6 Base Connection for Minimum Noise IP Susceptability (CNY17FXM, MOC8106M) H ■ Safety and Regulatory Approvals: ig h – UL1577, 4,170 VAC for 1 Minute RMS B – DIN-EN/IEC60747-5-5, 850 V Peak Working V Insulation Voltage C E O Applications P h ■ Power Supply Regulators o t ■ Digital Logic Inputs o t ■ Microprocessor Inputs ra n ■ Appliance Sensor Systems s ■ Industrial Controls Figure 1. Package Outlines is t o r O p Schematics t o c o u p l ANODE 1 6 NC ANODE 1 6 BASE e r s CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR NC 3 4 EMITTER NC 3 4 EMITTER CNY17F1M/2M/3M/4M CNY171M/2M/3M/4M MOC8106M Figure 2. Schematics ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2

C N Safety and Insulation Ratings Y 1 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit 7 X data. Compliance with the safety ratings shall be ensured by means of protective circuits. M , Parameter Characteristics C N Installation Classifications per DIN VDE < 150 VRMS I–IV Y 1 0110/1.89 Table 1, For Rated Mains Voltage < 300 VRMS I–IV 7 F Climatic Classification 55/100/21 X M Pollution Degree (DIN VDE 0110/1.89) 2 , M Comparative Tracking Index 175 O C 8 1 Symbol Parameter Value Unit 0 6 M Input-to-Output Test Voltage, Method A, V x 1.6 = V , Type and Sample Test with t = 10 s, PartIiOaRl DMischarge <P R5 pC 1360 Vpeak — m V PR Input-to-Output Test Voltage, Method B, V x 1.875 = V , 6 100% Production Test with t = 1 s, PartiaIOl DRMischarge < 5 pPCR 1594 Vpeak -P m i n VIORM Maximum Working Insulation Voltage 850 Vpeak D V Highest Allowable Over-Voltage 6000 V I IOTM peak P External Creepage ≥ 7 mm H i External Clearance ≥ 7 mm g h External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm B V DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm C E T Case Temperature(1) 175 °C O S I Input Current(1) 350 mA P S,INPUT h P Output Power(1) 800 mW o S,OUTPUT t o R Insulation Resistance at T , V = 500 V(1) > 109 Ω t IO S IO r a n Note: s 1. Safety limit values – maximum values allowed in the event of a failure. is t o r O p t o c o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 2

C N Absolute Maximum Ratings Y 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 7 X operable above the recommended operating conditions and stressing the parts to these levels is not recommended. M In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. , C The absolute maximum ratings are stress ratings only. N Y Symbol Parameters Value Units 1 7 TOTAL DEVICE F X TSTG Storage Temperature -40 to +125 °C M TA Ambient Operating Temperature -40 to +100 °C , M T Junction Temperature -40 to +125 ºC O J C T Lead Solder Temperature 260 for 10 seconds °C 8 SOL 1 Total Device Power Dissipation @ 25°C (LED plus detector) 270 mW 0 P 6 D Derate Linearly From 25°C 2.94 mW/°C M — EMITTER 6 IF Continuous Forward Current 60 mA -P VR Reverse Voltage 6 V in I (pk) Forward Current – Peak (1 µs pulse, 300 pps) 1.5 A D F I P LED Power Dissipation 25°C Ambient 120 mW P H D Derate Linearly From 25°C 1.41 mW/°C i g h DETECTOR B I Continuous Collector Current 50 mA V C C V Collector-Emitter Voltage 70 V E CEO O VECO Emitter Collector Voltage 7 V P h Detector Power Dissipation @ 25°C 150 mW o PD Derate Linearly from 25°C 1.76 mW/°C to t r a n s i s t o r O p t o c o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 3

C N Electrical Characteristics Y 1 7 TA = 25°C unless otherwise specified. X M Individual Component Characteristics , C Symbol Parameters Test Conditions Device Min. Typ. Max. Units N EMITTER Y 1 I = 10 mA All Devices 1.0 1.15 1.50 V 7 F F VF Input Forward Voltage CNY17XM, X I = 60 mA 1.0 1.35 1.65 V M F CNY17FXM , M C Capacitance V = 0 V, f = 1.0 MHz All Devices 18 pF J F O Reverse Leakage C I V = 6 V All Devices 0.001 10 µA R Current R 8 1 DETECTOR 0 6 Breakdown Voltage M — BV Collector-to-Emitter I = 1 mA, I = 0 All Devices 70 100 V CEO C F BV Collector-to-Base I = 10 µA, I = 0 CNY17XM 70 120 V 6 CBO C F - P BVECO Emitter-to-Collector IE = 100 µA, IF = 0 All Devices 7 10 V in Leakage Current D I I Collector-to-Emitter V = 10 V, I = 0 All Devices 1 50 nA P CEO CE F H I Collector-to-Base V = 10 V, I = 0 CNY17XM 20 nA CBO CB F i g Capacitance h C Collector-to-Emitter V = 0, f = 1 MHz All Devices 8 pF B CE CE V C Collector-to-Base V = 0, f = 1 MHz CNY17XM 20 pF C CB CB E C Emitter-to-Base V = 0, f = 1 MHz CNY17XM 10 pF O EB EB P h o Transfer Characteristics to t Symbol Parameters Test Conditions Device Min. Typ. Max. Units ra n COUPLED s i s I = 10 mA, V = 10 V MOC8106M 50 150 % F CE t o IF = 10 mA, VCE = 5 V CNY171M, CNY17F1M 40 80 % r Current Transfer O CTR I = 10 mA, V = 5 V CNY172M, CNY17F2M 63 125 % Ratio F CE p t IF = 10 mA, VCE = 5 V CNY173M, CNY17F3M 100 200 % o c I = 10 mA, V = 5 V CNY174M, CNY17F4M 160 320 % o F CE u Collector-Emitter IC = 0.5 mA, IF = 5 mA MOC8106M p VCE(SAT) Saturation Voltage I = 2.5 mA, I = 10 mA CNY17XM/CNY17FXM 0.4 V le C F r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 4

C N Electrical Characteristics (Continued) Y 1 T = 25°C unless otherwise specified. 7 A X M AC Characteristics , C Symbol Parameters Test Conditions Device Min. Typ. Max. Units N NON-SATURATED SWITCHING TIME Y 1 t Turn-On Time I = 2.0 mA, V = 10 V, R = 100 Ω All Devices 2.0 10.0 µs 7 on C CC L F t Turn-Off Time I = 2.0 mA, V = 10 V, R = 100 Ω All Devices 3.0 10.0 µs X off C CC L M td Delay Time IF = 10 mA, VCC = 5 V, RL = 75 Ω CNY17XM/CNY17FXM 5.6 µs , M t Rise Time I = 10 mA, V = 5 V, R = 75 Ω CNY17XM/CNY17FXM 4.0 µs r F CC L O t Storage Time I = 10 mA, V = 5 V, R = 75 Ω CNY17XM/CNY17FXM 4.1 µs C s F CC L 8 t Fall Time I = 10 mA, V = 5 V, R = 75 Ω CNY17XM/CNY17FXM 3.5 µs 1 f F CC L 0 SATURATED SWITCHING TIMES 6 M IF = 20 mA, VCC = 5 V, RL = 1 kΩ CNY171M/F1M 5.5 µs — td Delay Time I = 10 mA, V = 5 V, R = 1 kΩ CNY172M/3M/4M 8.0 µs 6 F CC L CNY17F2M/F3M/F4M - P IF = 20 mA, VCC = 5 V, RL = 1 kΩ CNY171M/F1M 4.0 µs in tr Rise Time IF = 10 mA, VCC = 5 V, RL = 1 kΩ CCNNYY11772FM2M/3/MF3/4MM/F4M 6.0 µs DIP I = 20 mA, V = 5 V, R = 1 kΩ CNY171M/F1M 34.0 µs H F CC L i g ts Storage Time I = 10 mA, V = 5 V, R = 1 kΩ CNY172M/3M/4M 39.0 µs h F CC L CNY17F2M/F3M/F4M B I = 20 mA, V = 5 V, R = 1 kΩ CNY171M/F1M 20.0 µs V F CC L C tf Fall Time I = 10 mA, V = 5 V, R = 1 kΩ CNY172M/3M/4M 24.0 µs EO F CC L CNY17F2M/F3M/F4M P h o t o Isolation Characteristics t r a Symbol Characteristic Test Conditions Min. Typ. Max. Units n s VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS is t C Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF o ISO I-O r R Isolation Resistance V = ±500 VDC, T = 25°C 1011 Ω O ISO I-O A p t o c o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 5

C N Typical Performance Characteristics Y 1 1.4 7 X 1.6 M 1.4 VTAC E= =2 55˚.C0 V NIFo =rm 1a0l imzeAd to 1.2 IF = 5 mA , CN Y 1.2 1.0 1 R IF = 10 mA 7 1.0 TC F RTC DE 0.8 DEZILA 0.8 XM, Z M M ILA 0.6 RO 0.6 IF = 20 mA O M N R C ON 0.4 8 0.4 1 0.2 NIFo =rm 1a0l imzeAd to: 06 TA = 25˚C M 0.0 0.2-60 -40 -20 0 20 40 60 80 100 0 2 4 6 8 10 12 14 16 18 20 — IF – FORWARD CURRENT (mA) TA – AMBIENT TEMPERATURE (˚C) 6 - Figure 3. Normalized CTR vs. Forward Current Figure 4. Normalized CTR vs. Ambient Temperature P i n D R / CTR)RBERBE(OPEN) 00001.....67890 IF = 20 mA IF = 10 mA IF = 5 mA R / CTR)RBERBE(OPEN) 00001.....67890 IF = 20 mA VCE = 0.3 V CIP High BV RMALIZED CTR ( CT 00000.....12345 VCE = 5.0 V RMALIZED CTR ( CT 00000.....12345 IIFF == 51 0m mAA EO Phototr O O a N 0.010 100 1000 N 0.010 100 1000 ns RBE – BASE RESISTANCE (kΩ) RBE – BASE RESISTANCE (kΩ) is t Figure 5. CTR vs. RBE (Unsaturated) Figure 6. CTR vs. RBE (Saturated) o r O p 1000 t o IF = 10 mA c VCC = 10 V o TA = 25˚C u p 100 5.0 l e μ)s( DEEPS GNIHCTIWS 110 TTorTnoff Tf )t / t( – t DE)nepo(no)R(nonoEB 223344......050505 VIRCCL = C= 2 =1 m0100A VΩ rs Z IL AM 1.5 R ON 1.0 0.1 0.5 0.1 1 10 100 10 100 1000 10000 100000 R – LOAD RESISTOR (kΩ) RBE – BASE RESISTANCE (kΩ) Figure 7. Switching Speed vs. Load Resistor Figure 8. Normalized ton vs. RBE ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 6

C N Typical Performance Characteristics (Continued) Y 1 7 1.8 X M 1.7 , 1.4 C N )t / )nepo(ffo)EB 1111....0123 VOLTAGE (V) 11..56 Y17FX t( –R(ffo 00..89 WARD 1.4 TA = -55°C M, M t DEffo 00..67 – FOR 1.3 TA = 25°C OC ZILAMRO 000...345 VIRCCL = C= 2 =1m 01A00ΩV V F 11..12 TA = 100°C 8106 N M 0.2 0.1 1.0 — 10 100 1000 10000 100000 1 10 100 6 RBE – BASE RESISTANCE (kΩ) IF – LED FORWARD CURRENT (mA) -P Figure 9. Normalized toff vs. RBE Figure 10. LED Forward Voltage vs. Forward Current in D I P V) H E ( 100 ig AG h N VOLT 10 TA = 25˚C BV O C TI E RA O U T P A 1 S h R o TTE IF = 2.5mA to MI t OR-E 0.1 ran T s LLEC 0.01 IF = 20mA ist O o - CAT) IF = 5mA IF = 10mA r O S p VCE ( 0.0010.01 0.1 1 10 to IC - COLLECTOR CURRENT (mA) c o u Figure 11. Collector-Emitter Saturation Voltage vs. Collector Current p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 7

C N Switching Test Circuit and Waveforms Y 1 7 X M VCC INPUT PULSE , C N Y 10% RL 1 IF IC OUTPUT PULSE 7F 90% X M INPUT OUTPUT (VCE) td ts , M tr tf O ton toff C 8 1 0 6 M Figure 12. Switching Test Circuit and Waveforms — 6 - P Reflow Profile i n D 300 IP 280 260°C H i g 260 h > 245°C = 42 s 240 B V 220 C E 200 O P 180 h Time above o °C 160 183°C = 90 s to 140 t r a 120 n s 100 1.822°C/s Ramp-up rate is t 80 o r 60 O p 40 t o 20 33 s c o 0 u p 0 60 120 180 270 360 l e Time (s) r s Figure 13. Reflow Profile ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 8

C N Ordering Information Y 1 7 Part Number Package Packing Method X M CNY171M DIP 6-Pin Tube (50 Units) , C CNY171SM SMT 6-Pin (Lead Bend) Tube (50 Units) N Y CNY171SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) 1 7 CNY171TM DIP 6-Pin, 0.4” Lead Spacing Tube (50 Units) F X CNY171VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) M CNY171SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) , M CNY171SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) O C CNY171TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 8 1 0 Note: 6 2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the M MOC8106M device. — 6 - P Marking Information i n D I P H 1 i g h CNY17-1 2 B V C V X YY Q 6 EO P h o t 3 4 5 o t r a n Figure 14. Top Mark s i s Table 1. Top Mark Definitions t o r 1 Fairchild Logo O p 2 Device Number t o 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) c o 4 One-Digit Year Code, e.g., “4” u p 5 Digit Work Week, Ranging from “01” to “53” le r 6 Assembly Package Code s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 9

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: CNY174M CNY174SM CNY174SR2M CNY174SR2VM CNY174SVM CNY174TVM CNY174VM