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  • 型号: CNY173TVM
  • 制造商: Fairchild Semiconductor
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CNY173TVM产品简介:

ICGOO电子元器件商城为您提供CNY173TVM由Fairchild Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 CNY173TVM价格参考¥1.24-¥1.24。Fairchild SemiconductorCNY173TVM封装/规格:光隔离器 - 晶体管,光电输出, 光隔离器 有基极的晶体管 输出 4170Vrms 1 通道 6-DIP。您可以下载CNY173TVM参考资料、Datasheet数据手册功能说明书,资料中有CNY173TVM 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

隔离器

描述

OPTOISO 7.5KV TRANS W/BASE 6DIP晶体管输出光电耦合器 Optocoupler Hi Bvceo Phototransistor

产品分类

光隔离器 - 晶体管,光电输出

品牌

Fairchild Semiconductor

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

光耦合器/光电耦合器,晶体管输出光电耦合器,Fairchild Semiconductor CNY173TVM-

数据手册

点击此处下载产品Datasheet

产品型号

CNY173TVM

Vce饱和值(最大值)

400mV

上升/下降时间(典型值)

1µs, 2µs

产品种类

晶体管输出光电耦合器

供应商器件封装

6-DIP

包装

管件

单位重量

864 mg

商标

Fairchild Semiconductor

安装类型

通孔

封装

Bulk

封装/外壳

6-DIP(0.400",10.16mm)

封装/箱体

PDIP-6

工作温度

-40°C ~ 100°C

工厂包装数量

1000

打开/关闭时间(典型值)

2µs, 3µs

最大上升时间

6 us

最大下降时间

24 us

最大功率耗散

250 mW

最大反向二极管电压

6 V

最大工作温度

+ 100 C

最大正向二极管电压

1.65 V

最大输入二极管电流

60 mA

最大集电极/发射极电压

70 V

最大集电极/发射极饱和电压

0.4 V

最小工作温度

- 55 C

标准包装

1,000

每芯片的通道数量

1 Channel

电压-正向(Vf)(典型值)

1.35V

电压-输出(最大值)

70V

电压-隔离

7500Vpk

电流-DC正向(If)

60mA

电流-输出/通道

50mA

电流传输比(最大值)

200% @ 10mA

电流传输比(最小值)

100% @ 10mA

电流传递比

200 %

系列

CNY173

绝缘电压

7500 Vrms

输入类型

DC

输出类型

DC

输出设备

NPN Phototransistor

通道数

1

配置

1 Channel

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

C N Y 1 October 2014 7 X M , C CNY171M, CNY172M, CNY173M, CNY174M, N Y 1 CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, 7 F X MOC8106M M , 6-Pin DIP High BV Phototransistor Optocouplers M CEO O C 8 Features Description 1 0 6 ■ High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, The CNY17XM, CNY17FXM, and MOC8106M devices M MOC8106M) consist of a gallium arsenide infrared emitting diode — ■ Closely Matched Current Transfer Ratio (CTR) coupled with an NPN phototransistor in a dual in-line 6 Minimizes Unit-to-Unit Variation package. - P ■ Current Transfer Ratio In Select Groups i Package Outlines n ■ Very Low Coupled Capacitance Along With D No Chip-to-Pin 6 Base Connection for Minimum Noise IP Susceptability (CNY17FXM, MOC8106M) H ■ Safety and Regulatory Approvals: ig h – UL1577, 4,170 VAC for 1 Minute RMS B – DIN-EN/IEC60747-5-5, 850 V Peak Working V Insulation Voltage C E O Applications P h ■ Power Supply Regulators o t ■ Digital Logic Inputs o t ■ Microprocessor Inputs ra n ■ Appliance Sensor Systems s ■ Industrial Controls Figure 1. Package Outlines is t o r O p Schematics t o c o u p l ANODE 1 6 NC ANODE 1 6 BASE e r s CATHODE 2 5 COLLECTOR CATHODE 2 5 COLLECTOR NC 3 4 EMITTER NC 3 4 EMITTER CNY17F1M/2M/3M/4M CNY171M/2M/3M/4M MOC8106M Figure 2. Schematics ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2

C N Safety and Insulation Ratings Y 1 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit 7 X data. Compliance with the safety ratings shall be ensured by means of protective circuits. M , Parameter Characteristics C N Installation Classifications per DIN VDE < 150 VRMS I–IV Y 1 0110/1.89 Table 1, For Rated Mains Voltage < 300 VRMS I–IV 7 F Climatic Classification 55/100/21 X M Pollution Degree (DIN VDE 0110/1.89) 2 , M Comparative Tracking Index 175 O C 8 1 Symbol Parameter Value Unit 0 6 M Input-to-Output Test Voltage, Method A, V x 1.6 = V , Type and Sample Test with t = 10 s, PartIiOaRl DMischarge <P R5 pC 1360 Vpeak — m V PR Input-to-Output Test Voltage, Method B, V x 1.875 = V , 6 100% Production Test with t = 1 s, PartiaIOl DRMischarge < 5 pPCR 1594 Vpeak -P m i n VIORM Maximum Working Insulation Voltage 850 Vpeak D V Highest Allowable Over-Voltage 6000 V I IOTM peak P External Creepage ≥ 7 mm H i External Clearance ≥ 7 mm g h External Clearance (for Option TV, 0.4" Lead Spacing) ≥ 10 mm B V DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm C E T Case Temperature(1) 175 °C O S I Input Current(1) 350 mA P S,INPUT h P Output Power(1) 800 mW o S,OUTPUT t o R Insulation Resistance at T , V = 500 V(1) > 109 Ω t IO S IO r a n Note: s 1. Safety limit values – maximum values allowed in the event of a failure. is t o r O p t o c o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 2

C N Absolute Maximum Ratings Y 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be 7 X operable above the recommended operating conditions and stressing the parts to these levels is not recommended. M In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. , C The absolute maximum ratings are stress ratings only. N Y Symbol Parameters Value Units 1 7 TOTAL DEVICE F X TSTG Storage Temperature -40 to +125 °C M TA Ambient Operating Temperature -40 to +100 °C , M T Junction Temperature -40 to +125 ºC O J C T Lead Solder Temperature 260 for 10 seconds °C 8 SOL 1 Total Device Power Dissipation @ 25°C (LED plus detector) 270 mW 0 P 6 D Derate Linearly From 25°C 2.94 mW/°C M — EMITTER 6 IF Continuous Forward Current 60 mA -P VR Reverse Voltage 6 V in I (pk) Forward Current – Peak (1 µs pulse, 300 pps) 1.5 A D F I P LED Power Dissipation 25°C Ambient 120 mW P H D Derate Linearly From 25°C 1.41 mW/°C i g h DETECTOR B I Continuous Collector Current 50 mA V C C V Collector-Emitter Voltage 70 V E CEO O VECO Emitter Collector Voltage 7 V P h Detector Power Dissipation @ 25°C 150 mW o PD Derate Linearly from 25°C 1.76 mW/°C to t r a n s i s t o r O p t o c o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 3

C N Electrical Characteristics Y 1 7 TA = 25°C unless otherwise specified. X M Individual Component Characteristics , C Symbol Parameters Test Conditions Device Min. Typ. Max. Units N EMITTER Y 1 I = 10 mA All Devices 1.0 1.15 1.50 V 7 F F VF Input Forward Voltage CNY17XM, X I = 60 mA 1.0 1.35 1.65 V M F CNY17FXM , M C Capacitance V = 0 V, f = 1.0 MHz All Devices 18 pF J F O Reverse Leakage C I V = 6 V All Devices 0.001 10 µA R Current R 8 1 DETECTOR 0 6 Breakdown Voltage M — BV Collector-to-Emitter I = 1 mA, I = 0 All Devices 70 100 V CEO C F BV Collector-to-Base I = 10 µA, I = 0 CNY17XM 70 120 V 6 CBO C F - P BVECO Emitter-to-Collector IE = 100 µA, IF = 0 All Devices 7 10 V in Leakage Current D I I Collector-to-Emitter V = 10 V, I = 0 All Devices 1 50 nA P CEO CE F H I Collector-to-Base V = 10 V, I = 0 CNY17XM 20 nA CBO CB F i g Capacitance h C Collector-to-Emitter V = 0, f = 1 MHz All Devices 8 pF B CE CE V C Collector-to-Base V = 0, f = 1 MHz CNY17XM 20 pF C CB CB E C Emitter-to-Base V = 0, f = 1 MHz CNY17XM 10 pF O EB EB P h o Transfer Characteristics to t Symbol Parameters Test Conditions Device Min. Typ. Max. Units ra n COUPLED s i s I = 10 mA, V = 10 V MOC8106M 50 150 % F CE t o IF = 10 mA, VCE = 5 V CNY171M, CNY17F1M 40 80 % r Current Transfer O CTR I = 10 mA, V = 5 V CNY172M, CNY17F2M 63 125 % Ratio F CE p t IF = 10 mA, VCE = 5 V CNY173M, CNY17F3M 100 200 % o c I = 10 mA, V = 5 V CNY174M, CNY17F4M 160 320 % o F CE u Collector-Emitter IC = 0.5 mA, IF = 5 mA MOC8106M p VCE(SAT) Saturation Voltage I = 2.5 mA, I = 10 mA CNY17XM/CNY17FXM 0.4 V le C F r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 4

C N Electrical Characteristics (Continued) Y 1 T = 25°C unless otherwise specified. 7 A X M AC Characteristics , C Symbol Parameters Test Conditions Device Min. Typ. Max. Units N NON-SATURATED SWITCHING TIME Y 1 t Turn-On Time I = 2.0 mA, V = 10 V, R = 100 Ω All Devices 2.0 10.0 µs 7 on C CC L F t Turn-Off Time I = 2.0 mA, V = 10 V, R = 100 Ω All Devices 3.0 10.0 µs X off C CC L M td Delay Time IF = 10 mA, VCC = 5 V, RL = 75 Ω CNY17XM/CNY17FXM 5.6 µs , M t Rise Time I = 10 mA, V = 5 V, R = 75 Ω CNY17XM/CNY17FXM 4.0 µs r F CC L O t Storage Time I = 10 mA, V = 5 V, R = 75 Ω CNY17XM/CNY17FXM 4.1 µs C s F CC L 8 t Fall Time I = 10 mA, V = 5 V, R = 75 Ω CNY17XM/CNY17FXM 3.5 µs 1 f F CC L 0 SATURATED SWITCHING TIMES 6 M IF = 20 mA, VCC = 5 V, RL = 1 kΩ CNY171M/F1M 5.5 µs — td Delay Time I = 10 mA, V = 5 V, R = 1 kΩ CNY172M/3M/4M 8.0 µs 6 F CC L CNY17F2M/F3M/F4M - P IF = 20 mA, VCC = 5 V, RL = 1 kΩ CNY171M/F1M 4.0 µs in tr Rise Time IF = 10 mA, VCC = 5 V, RL = 1 kΩ CCNNYY11772FM2M/3/MF3/4MM/F4M 6.0 µs DIP I = 20 mA, V = 5 V, R = 1 kΩ CNY171M/F1M 34.0 µs H F CC L i g ts Storage Time I = 10 mA, V = 5 V, R = 1 kΩ CNY172M/3M/4M 39.0 µs h F CC L CNY17F2M/F3M/F4M B I = 20 mA, V = 5 V, R = 1 kΩ CNY171M/F1M 20.0 µs V F CC L C tf Fall Time I = 10 mA, V = 5 V, R = 1 kΩ CNY172M/3M/4M 24.0 µs EO F CC L CNY17F2M/F3M/F4M P h o t o Isolation Characteristics t r a Symbol Characteristic Test Conditions Min. Typ. Max. Units n s VISO Input-Output Isolation Voltage t = 1 Minute 4170 VACRMS is t C Isolation Capacitance V = 0 V, f = 1 MHz 0.2 pF o ISO I-O r R Isolation Resistance V = ±500 VDC, T = 25°C 1011 Ω O ISO I-O A p t o c o u p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 5

C N Typical Performance Characteristics Y 1 1.4 7 X 1.6 M 1.4 VTAC E= =2 55˚.C0 V NIFo =rm 1a0l imzeAd to 1.2 IF = 5 mA , CN Y 1.2 1.0 1 R IF = 10 mA 7 1.0 TC F RTC DE 0.8 DEZILA 0.8 XM, Z M M ILA 0.6 RO 0.6 IF = 20 mA O M N R C ON 0.4 8 0.4 1 0.2 NIFo =rm 1a0l imzeAd to: 06 TA = 25˚C M 0.0 0.2-60 -40 -20 0 20 40 60 80 100 0 2 4 6 8 10 12 14 16 18 20 — IF – FORWARD CURRENT (mA) TA – AMBIENT TEMPERATURE (˚C) 6 - Figure 3. Normalized CTR vs. Forward Current Figure 4. Normalized CTR vs. Ambient Temperature P i n D R / CTR)RBERBE(OPEN) 00001.....67890 IF = 20 mA IF = 10 mA IF = 5 mA R / CTR)RBERBE(OPEN) 00001.....67890 IF = 20 mA VCE = 0.3 V CIP High BV RMALIZED CTR ( CT 00000.....12345 VCE = 5.0 V RMALIZED CTR ( CT 00000.....12345 IIFF == 51 0m mAA EO Phototr O O a N 0.010 100 1000 N 0.010 100 1000 ns RBE – BASE RESISTANCE (kΩ) RBE – BASE RESISTANCE (kΩ) is t Figure 5. CTR vs. RBE (Unsaturated) Figure 6. CTR vs. RBE (Saturated) o r O p 1000 t o IF = 10 mA c VCC = 10 V o TA = 25˚C u p 100 5.0 l e μ)s( DEEPS GNIHCTIWS 110 TTorTnoff Tf )t / t( – t DE)nepo(no)R(nonoEB 223344......050505 VIRCCL = C= 2 =1 m0100A VΩ rs Z IL AM 1.5 R ON 1.0 0.1 0.5 0.1 1 10 100 10 100 1000 10000 100000 R – LOAD RESISTOR (kΩ) RBE – BASE RESISTANCE (kΩ) Figure 7. Switching Speed vs. Load Resistor Figure 8. Normalized ton vs. RBE ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 6

C N Typical Performance Characteristics (Continued) Y 1 7 1.8 X M 1.7 , 1.4 C N )t / )nepo(ffo)EB 1111....0123 VOLTAGE (V) 11..56 Y17FX t( –R(ffo 00..89 WARD 1.4 TA = -55°C M, M t DEffo 00..67 – FOR 1.3 TA = 25°C OC ZILAMRO 000...345 VIRCCL = C= 2 =1m 01A00ΩV V F 11..12 TA = 100°C 8106 N M 0.2 0.1 1.0 — 10 100 1000 10000 100000 1 10 100 6 RBE – BASE RESISTANCE (kΩ) IF – LED FORWARD CURRENT (mA) -P Figure 9. Normalized toff vs. RBE Figure 10. LED Forward Voltage vs. Forward Current in D I P V) H E ( 100 ig AG h N VOLT 10 TA = 25˚C BV O C TI E RA O U T P A 1 S h R o TTE IF = 2.5mA to MI t OR-E 0.1 ran T s LLEC 0.01 IF = 20mA ist O o - CAT) IF = 5mA IF = 10mA r O S p VCE ( 0.0010.01 0.1 1 10 to IC - COLLECTOR CURRENT (mA) c o u Figure 11. Collector-Emitter Saturation Voltage vs. Collector Current p l e r s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 7

C N Switching Test Circuit and Waveforms Y 1 7 X M VCC INPUT PULSE , C N Y 10% RL 1 IF IC OUTPUT PULSE 7F 90% X M INPUT OUTPUT (VCE) td ts , M tr tf O ton toff C 8 1 0 6 M Figure 12. Switching Test Circuit and Waveforms — 6 - P Reflow Profile i n D 300 IP 280 260°C H i g 260 h > 245°C = 42 s 240 B V 220 C E 200 O P 180 h Time above o °C 160 183°C = 90 s to 140 t r a 120 n s 100 1.822°C/s Ramp-up rate is t 80 o r 60 O p 40 t o 20 33 s c o 0 u p 0 60 120 180 270 360 l e Time (s) r s Figure 13. Reflow Profile ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 8

C N Ordering Information Y 1 7 Part Number Package Packing Method X M CNY171M DIP 6-Pin Tube (50 Units) , C CNY171SM SMT 6-Pin (Lead Bend) Tube (50 Units) N Y CNY171SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) 1 7 CNY171TM DIP 6-Pin, 0.4” Lead Spacing Tube (50 Units) F X CNY171VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) M CNY171SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) , M CNY171SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) O C CNY171TVM DIP 6-Pin, 0.4” Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) 8 1 0 Note: 6 2. The product orderable part number system listed in this table also applies to the CNY17FXM product family and the M MOC8106M device. — 6 - P Marking Information i n D I P H 1 i g h CNY17-1 2 B V C V X YY Q 6 EO P h o t 3 4 5 o t r a n Figure 14. Top Mark s i s Table 1. Top Mark Definitions t o r 1 Fairchild Logo O p 2 Device Number t o 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) c o 4 One-Digit Year Code, e.g., “4” u p 5 Digit Work Week, Ranging from “01” to “53” le r 6 Assembly Package Code s ©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com CNY17XM, CNY17FXM, MOC8106M Rev. 1.1.2 9

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: CNY173SR2VM CNY173SR2M CNY173VM CNY173TVM CNY173SM CNY173M CNY173SVM