Smart Low Side Power Switch Power HITFET BTS 134D Product Summary Features (cid:2) Logic Level Input Drain source voltage VDS 42 V (cid:2) Input Protection (ESD) On-state resistance RDS(on) 50 m(cid:1) (cid:2) Thermal shutdown with auto restart Nominal load current ID(Nom) 3.5 A • Green product (RoHS compliant) Clamping energy E 3 J AS (cid:2) Overload protection (cid:2) Short circuit protection (cid:2) Overvoltage protection (cid:2) Current limitation P / PG-TO252-3-11 (cid:2) Analog driving possible Application (cid:2) All kinds of resistive, inductive and capacitive loads in switching or linear applications (cid:2) µC compatible power switch for 12 V DC applications (cid:2) Replaces electromechanical relays and discrete circuits General Description (cid:3) N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Vbb M (cid:1) Drain HITFET Pin 2 and 4 (TAB) Current Overvoltage- Limitation Protection In Gate-Driving Pin 1 Unit Over- Overload Short circuit ESD temperature Protection Protection Protection Pin 3 Source Complete product spectrum and additional information http://www.infineon.com/hitfet Datasheet 1 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D Maximum Ratings at T = 25°C, unless otherwise specified j Parameter Symbol Value Unit Drain source voltage V 42 V DS Supply voltage for full short circuit protection V 42 bb(SC) Continuous input voltage1) V -0.2 2) ... +10 IN Continuous input current2) I mA IN -0.2V (cid:4) V (cid:4) 10V self limited IN V < -0.2V or V > 10V | I | (cid:4) 2 IN IN IN Operating temperature T -40 ...+150 °C j Storage temperature T -55 ... +150 stg Power dissipation 5) P W tot T = 85 °C 43 C 6cm2 cooling area , T = 85 °C 1.1 A Unclamped single pulse inductive energy 2) E 3 J AS Load dump protection V 2)3) = V + V V 65 V LoadDump A S LD VIN = 0 and 10 V, td = 400 ms, RI = 2 (cid:1), R = 4.5 (cid:1), V = 13.5 V L A Electrostatic discharge voltage2)(Human Body Model) VESD 2 kV according to Jedec norm EIA/JESD22-A114-B, Section 4 Thermal resistance junction - case: R 1.5 K/W thJC SMD: junction - ambient R thJA @ min. footprint 115 @ 6 cm2 cooling area 4) 55 1For input voltages beyond these limits I has to be limited. IN 2not subject to production test, specified by design 3VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 5not subject to production test, calculated by R and R thJA ds(on) Datasheet 2 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D Electrical Characteristics Parameter Symbol Values Unit at T = 25°C, unless otherwise specified min. typ. max. j Characteristics Drain source clamp voltage V 42 - 55 V DS(AZ) T = - 40 ...+ 150, I = 10 mA j D Off-state drain current I µA DSS T = -40...+85 °C, V = 32 V , V = 0 V - 1.5 8 j DS IN T = 150 °C - 5 15 j Input threshold voltage V V IN(th) I = 1.4 mA, T = 25 °C 1.3 1.7 2.2 D j I = 1.4 mA, T = 150 °C 0.8 - - D j On state input current I - 10 30 µA IN(on) On-state resistance RDS(on) m(cid:1) V = 5 V, I = 3 A, T = 25 °C - 45 60 IN D j V = 5 V, I = 3 A, T = 150 °C - 75 100 IN D j On-state resistance R DS(on) V = 10 V, I = 3 A, T = 25 °C - 35 50 IN D j V = 10 V, I = 3 A, T = 150 °C - 65 90 IN D j Nominal load current 5) I 3.5 4.6 - A D(Nom) T < 150°C, V = 10 V, T = 85 °C, SMD 1) j IN A Nominal load current 5) I 7.1 10 - D(ISO) V = 10 V, V = 0.5 V, T = 85 °C, T < 150°C IN DS C j Current limit (active if V >2.5 V)2) I 18 24 30 DS D(lim) V = 10 V, V = 12 V, t = 200 µs IN DS m 1@ 6 cm2cooling area 2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on condit and a short circuit occurs, these values might be exceeded for max. 50 µs. 5not subject to production test, calculated by R and R thJA ds(on) Datasheet 3 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D Electrical Characteristics Parameter Symbol Values Unit at T = 25°C, unless otherwise specified min. typ. max. j Dynamic Characteristics Turn-on time V to 90% I : t - 60 100 µs IN D on R = 4.7 (cid:1), V = 0 to 10 V, V = 12 V L IN bb Turn-off time V to 10% I : t - 60 100 IN D off R = 4.7 (cid:1), V = 10 to 0 V, V = 12 V L IN bb Slew rate on 70 to 50% Vbb: -dVDS/dton - 0.3 1.5 V/µs R = 4.7 (cid:1), V = 0 to 10 V, V = 12 V L IN bb Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.7 1.5 R = 4.7 (cid:1), V = 10 to 0 V, V = 12 V L IN bb Protection Functions1) Thermal overload trip temperature T 150 175 - °C jt Thermal hysteresis 2) (cid:5)Tjt - 10 - K Input current protection mode I - 130 300 µA IN(Prot) T = 150 °C j Unclamped single pulse inductive energy 2) E 3 - - J AS I = 3 A, T = 25 °C, V = 12 V D j bb Inverse Diode Inverse diode forward voltage V - 1.0 1.5 V SD I = 15 A, t = 250 µs, V = 0 V, F m IN t = 300 µs P 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Datasheet 4 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D Block diagram Terms Inductive and overvoltage output clamp RL D V Z IIN 2 D IN 1 ID VDS Vbb HITFET 3 S S VIN HITFET Input circuit (ESD protection) Short circuit behaviour Gate Drive Input VIN Source/ IIN Ground IDS Tj Datasheet 5 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D 1 Maximum allowable power dissipation 2 On-state resistance Ptot = f(TC) resp. RON=f(Tj); ID=3A; VIN=10V P = f(T ) @ R =55 K/W tot A thJA 3 100 m(cid:1) max. W Rthjc = 1.5 K/W 80 n) o 70 Ptot 2 RDS( typ. 60 SMD @ 6cm2 1.5 50 40 1 30 20 0.5 10 0 0 -50 -25 0 25 50 75 100 °C 150 -50 -25 0 25 50 75 100 125 °C 175 T ;T T A C j 3 On-state resistance 4 Typ. input threshold voltage RON=f(Tj); ID=3A; VIN=5V VIN(th) = f(Tj); ID = 0.7 mA; VDS= 12V 110 2 m(cid:1) max. V 90 1.6 S(on) 80 typ. S(th) 1.4 D 70 G R V 1.2 60 1 50 0.8 40 0.6 30 20 0.4 10 0.2 0 0 -50 -25 0 25 50 75 100 125 °C 175 -50 -25 0 25 50 75 100 °C 150 T T j j Datasheet 6 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D 5 Typ. transfer characteristics 6 Typ. short circuit current ID=f(VIN); VDS=12V; TJstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: V IN 30 30 A A C) 20 S 20 D D( I I Vin=10V 15 15 5V 10 10 5 5 0 0 0 1 2 3 4 5 6 7 8 V 10 -50 -25 0 25 50 75 100 125 °C 175 V T IN j 7 Typ. output characteristics 8 Off-state drain current ID=f(VDS); TJstart=25°C IDSS = f(Tj) Parameter: V IN 35 16 max. A µA 10V 7V 12 25 6V S D DS 10 I 20 5V I 4V 8 15 6 typ. 10 Vin=3V 4 5 2 00 1 2 3 4 V 6 0-40 -15 10 35 60 85 110 135 °C 185 V T DS j Datasheet 7 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D 9 Typ. overload current 10 Typ. transient thermal impedance I = f(t), V =12 V, no heatsink Z =f(t ) @ 6 cm2 cooling area D(lim) bb thJA p Parameter: T Parameter: D=t /T jstart p 40 102 K/W A D=0.5 -40°C 101 0.2 30 0.1 m) A 0.05 ID(li 25 25°C ZthJ 100 0.02 0.01 20 85°C 10-1 15 150°C 10 10-2 5 Single pulse 00 1 2 3 ms 5 10-310-710-610-510-410-310-210-1100 101 s 103 t t p 11 Determination of I D(lim) I = f(t); t = 200µs D(lim) m Parameter: T Jstart 40 A 30 -40°C m) D(li 25 I 25°C 20 85°C 15 150°C 10 5 0 0 0.1 0.2 0.3 0.4 ms 0.6 t Datasheet 8 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D Package Outlines 1 Package Outlines +0.15 6.5 -0.05 A +0.05 2.3 5.4 ±0.1 -0.10 (5) B 0.5 +0.08 -0.04 1 0. ± 1 +0.20 0.9 -0.01 ) 5 98±0.5 .22-0.2 (4.24 0.8±0.1 0...0.15 9. 6 N. I M 1 0.15 MAX. 5 . 3x 0 per side +0.08 0.75 ±0.1 0.5 -0.04 2.28 0.1 B 4.57 0.25 M A B All metal surfaces tin plated, except area of cut. GPT09277 Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb- free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Please specify the package needed (e.g. green package) when placing an order You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm Datasheet 9 Rev. 1.3, 2006-12-22

Smart Low Side Power Switch Power HITFET BTS 134D Revision History 2 Revision History Version Date Changes Rev. 1.3 2006-12-22 released automotive green and robust version (BTS) Package parameter (humidity and climatic) removed in Maximum ratings Rev. 1.2 2006-12-11 AEC icon added RoHS icon added Green product (RoHS-compliant) added to the feature list Package information updated to green Green explanation added Rev. 1.1 2006-08-08 released non automotive green version (ITS) Rev. 1.0 2004-03-05 released production version Datasheet 10 Rev. 1.3, 2006-12-22

Edition 2006-12-22 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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