Thyristors Surface Mount – 800V > BTA12-600BW3G, BTA12-800BW3G, BTA12-600BW3G, BTA12-800BW3G, Pb Description Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 12 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 2000 V/µs minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 2.5 A/ms minimum at 125°C Pin Out • Internally Isolated (2500 VRMS) • These Devices are Pb−Free and are RoHS Compliant Functional Diagram MT2 MT1 G CASE 221A STYLE 4 1 2 Additional Information Datasheet Resources Samples © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 800V > BTA12-600BW3G, BTA12-800BW3G, Maximum Ratings (T = 25°C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) V , (Gate Open, Sine Wave 50 to 60 Hz, T = -40° to 125°C) DRM J V V BTA12−600BW3G RRM 600 BTA12−800BW3G 800 On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T = 80°C) I 12 A C T (RMS) Peak Non-Repetitive Surge Current I 105 A (One Full Cycle Sine Wave, 60 Hz, T = 25°C) TSM C Circuit Fusing Consideration (t = 8.3 ms) I2t 46 A²sec Non−Repetitive Surge Peak Off−State Voltage (T = 25°C, t = 10ms) V / V V / V V J DSM RSM DSM RSM +100 Peak Gate Current (T = 125°C, t = 20ms) I 4.0 A J GM Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) PG(AV) 20 W Average Gate Power (T = 125°C) P 1.0 W J G(AV) Operating Junction Temperature Range T -40 to +125 °C J Storage Temperature Range T -40 to +125 °C stg RMS Isolation Voltage (t = 300 ms, R.H.≤ 30%, T = 25°C) V 2500 V A iso Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction−to−Case (AC) R 2.5 8JC °C/W Junction−to−Ambient R 60 8JA Maximum Lead Temperature for Soldering Purposes, 1/8” from case for T 260 °C 10 seconds L © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 800V > BTA12-600BW3G, BTA12-800BW3G, Electrical Characteristics - OFF (T = 25°C unless otherwise noted ; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current TJ = 25°C I , - - 0.005 (V = V = V ; Gate Open) DRM mA D D R M R R M T = 125°C IRRM - - 2.0 J Electrical Characteristics - ON (T = 25°C unless otherwise noted; Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Forward On-State Voltage (Note 2) (I = ±17 A Peak) V − − 1.55 V TM TM MT2(+), G(+) 2.5 − 50 Gate Trigger Current (Continuous dc) (V = 12 V, R = 30 Ω) D L MT2(+), G(−) I 2.5 − 50 mA GT MT2(−), G(−) 2.5 − 50 Holding Current IH − − 50 mA (V = 12 V, Gate Open, Initiating Current = ±100 mA) D MT2(+), G(+) − − 70 Latching Current (V = 24 V, I = 60 mA) MT2(+), G(−) IL − − 80 mA D G MT2(−), G(−) − − 70 MT2(+), G(+) 0.5 − 1.7 Gate Trigger Voltage (V = 12 V, R = 30 Ω) MT2(+), G(−) V 0.5 − 1.1 V D L GT MT2(−), G(−) 0.5 − 1.1 MT2(+), G(+) 0.2 − − Gate Non−Trigger Voltage (T = 125°C) MT2(+), G(−) t 0.2 − − V J gt MT2(−), G(−) 0.2 − − 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 800V > BTA12-600BW3G, BTA12-800BW3G, Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Rate of Change of Commutating Current, See Figure 10. (dI/dt)c 2.5 − − A/ms (Gate Open, T = 125°C, No Snubber) J Critical Rate of Rise of On−State Current dI/dt − − 50 A/µs (T = 125°C, f = 120 Hz, I = 2 x I , tr ≤ 100 ns) J G GT Critical Rate of Rise of Off-State Voltage (V = 0.66 x V , Exponential Waveform, Gate Open, T = 125°C) dV/dt 2000 − − V/µs D DRM J Voltage Current Characteristic of SCR Symbol Parameter +Current V Peak Repetitive Forward Off State Voltage Quadrant 1 DRM MainTerminal 2 + VTM I Peak Forward Blocking Current DRM on state IH V Peak Repetitive Reverse Off State Voltage IRRM at VRRM RRM I Peak Reverse Blocking Current off state +Voltage RRM IH IDRM at VDRM V Maximum On State Voltage Quadrant 3 TM MainTerminal 2 VTM I Holding Current H Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 QuadrantII ( ) IGT (+) IGT QuadrantI GATE GATE MT1 MT1 REF REF IGT +IGT ( ) MT2 ( ) MT2 QuadrantIII ( ) IGT (+) IGT QuadrantIV GATE GATE MT1 MT1 REF REF MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With inphase signals (using standard AC lines) quadrants I and III are used. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 800V > BTA12-600BW3G, BTA12-800BW3G, Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation 20 125 DC 18 C) W) 16 180° °E (110 120°, 90°, 60°, 30° ER ( 14 120° R W TU O 12 A P R E 10 E G MP 95 RA 8 90° E E ASE T 80 180° , AVAV 64 30°60° C P , C DC 2 T 0 65 0 2 4 6 8 10 12 0 2 4 6 8 10 12 IT(RMS), ON-STATE CURRENT (A) Figure 3. On−State Characteristics Figure 4. Thermal Response D) E Z ALI 1 M R O N ( E C N A T S SI E L R 0.1 A M R E H T T N E SI N A r(t), TR0.010.1 1 10t, TIME (m1s0)0 1000 1·104 Figure 5. Hold Current Variation © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 800V > BTA12-600BW3G, BTA12-800BW3G, Figure 6. Gate Trigger Current Variation Figure 7. Gate Trigger Voltage Variation Figure 8. Critical Rate of Rise of Off-State Voltage Figure 10. Latching Current Variation (Exponential Waveform) µ 5000 VD = 800 Vpk 4K TJ = 125°C 3K 2K 1K 0 10 100 1000 10000 RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS) Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17

Thyristors Surface Mount – 800V > BTA12-600BW3G, BTA12-800BW3G, Dimensions Part Marking System 4 SEATING PLANE B F C T S 4 Q A BTA12 xBWG TO 220AB AYWW 12 3 U 1 CASE 221A 2 H 3 STYLE 12 K Z L R x= 6 or 8 V J A= Assembly Location (Optional)* Y= Year G WW = Work Week D G= Pb Free Package N *The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank. Inches Millimeters Pin Assignment Dim Min Max Min Max 1 Main Terminal 1 A 0.570 0.620 14.48 15.75 2 Main Terminal 2 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 3 Gate D 0.025 0.035 0.64 0.88 4 No Connection F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 Ordering Information J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 Device Package Shipping L 0.045 0.060 1.15 1.52 TO−220AB BTA12−600BW3G 50 Units / Rail N 0.190 0.210 4.83 5.33 (Pb−Free) Q 0.100 0.120 2.54 3.04 TO−220AB BTA12−800BW3G 50 Units / Rail R 0.080 0.110 2.04 2.79 (Pb−Free) S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 −−− 1.15 −−− Z −−− 0.080 −−− 2.04 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics. © 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17