BT137X-600 4Q Triac Rev.01 - 17 April 2018 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT186A (TO-220F) plastic package intended for use in bidirectional switching and phase control applications. 2. Features and benefits • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Less sensitive gate for improved noise immunity • Triggering in all four quadrants • Isolated package 3. Applications • General purpose motor control • General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak off-state 600 V DRM voltage I RMS on-state current full sine wave; T ≤ 73 °C; 8 A T(RMS) h Fig. 1; Fig. 2; Fig. 3 I non-repetitive peak on- full sine wave; T = 25 °C; 65 A TSM j(init) state current t = 20 ms; Fig. 4; Fig. 5 p Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 5 35 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; - 8 35 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; - 11 35 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G+; - 30 70 mA D T T = 25 °C; Fig. 7 j

WeEn Semiconductors BT137X-600 4Q Triac 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb 2 T2 main terminal 2 T2 T1 3 G gate G mb n.c. mounting base; isolated sym051 1 2 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT137X-600 TO-220F plastic single-ended package; isolated heatsink mounted; SOT186A 1 mounting hole; 3-lead TO-220 "full pack" 7. Marking Table 4. Marking codes Type number Marking codes BT137X-600 BT137X-600 BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 2 / 13

WeEn Semiconductors BT137X-600 4Q Triac 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit V repetitive peak off-state 600 V DRM voltage I RMS on-state current full sine wave; T ≤ 73 °C; 8 A T(RMS) h Fig 1; Fig 2; Fig 3 I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; 65 A TSM j(init) p state current Fig 4; Fig 5 full sine wave; T = 25 °C; t = 16.7 ms 71 A j(init) p I2t I2t for fusing t = 10 ms; SIN 21 A2s p dI /dt rate of rise of on-state I = 70 mA; T2+ G+ 50 A/μs T G current I = 70 mA; T2+ G- 50 A/μs G I = 70 mA; T2- G- 50 A/μs G I = 140 mA; T2- G+ 10 A/μs G I peak gate current 2 A GM P peak gate power 5 W GM P average gate power over any 20 ms period 0.5 W G(AV) T storage temperature -40 to 150 °C stg T junction temperature 125 °C j f = 50 Hz; T = 73 °C Fig. 2. RMS on-state current as a function of heatsink h temperature; maximum values Fig. 1. RMS on-state current as a function of surge duration; maximum values BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 3 / 13

WeEn Semiconductors BT137X-600 4Q Triac α = conduction angle a = form factor = I / I T(RMS) T(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 4 / 13

WeEn Semiconductors BT137X-600 4Q Triac t ≤ 20 ms p (1) dI /dt limit T (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 5 / 13

WeEn Semiconductors BT137X-600 4Q Triac 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full or half cycle; with heatsink - - 4.5 K/W th(j-h) from junction to compound; Fig 6 heatsink full or half cycle; without heatsink - - 6.5 K/W compound; Fig 6 R thermal resistance in free air - 55 - K/W th(j-a) from junction to ambient (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 10. Isolation characteristics Table 7. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit V RMS isolation voltage from all terminals to external heatsink; - - 2500 V isol(RMS) sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; T = 25 °C h C isolation capacitance from main terminal 2 to external - 10 - pF isol heatsink; f = 1 MHz; T = 25 °C h BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 6 / 13

WeEn Semiconductors BT137X-600 4Q Triac 11. Characteristics Table 8. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 0.1 A; T2+ G+; - 5 35 mA GT D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2+ G-; - 8 35 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G-; - 11 35 mA D T T = 25 °C; Fig. 7 j V = 12 V; I = 0.1 A; T2- G+; - 30 70 mA D T T = 25 °C; Fig. 7 j I latching current V = 12 V; I = 0.1 A; T2+ G+; - 7 30 mA L D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2+ G-; - 16 45 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G-; - 5 30 mA D G T = 25 °C; Fig. 8 j V = 12 V; I = 0.1 A; T2- G+; - 7 45 mA D G T = 25 °C; Fig. 8 j I holding current V = 12 V; T = 25 °C; Fig. 9 - 5 20 mA H D j V on-state voltage I = 10 A; T = 25 °C; Fig. 10 - 1.3 1.65 V T T j V gate trigger voltage V = 12 V; I = 0.1 A; T= 25 °C; - 0.7 1 V GT D T j Fig. 11 V = 400 V; I = 0.1 A; T= 125 °C; 0.25 0.4 - V D T j Fig. 11 I off-state current V = 600 V; T= 125 °C - 0.1 0.5 mA D D j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 125 °C; (V = 67% 100 250 - V/μs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit dV /dt rate of change of V = 400 V; T = 95 °C; I = 8 A; - 20 - V/μs com D j T commutating voltage dI /dt = 3.6 A/ms com t gate-controlled turn-on V = 600 V; I = 12 A; I = 0.1 A; - 2 - μs gt D TM G time dI /dt = 5 A/μs G BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 7 / 13

WeEn Semiconductors BT137X-600 4Q Triac (1) T2- G+ Fig. 8. Normalized latching current as a function of (2) T2- G- junction temperature (3) T2+ G- (4) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature Fig. 9. Normalized holding current as a function of V = 1.264 V; R = 0.038 Ω o s junction temperature (1) T = 125 °C; typical values j (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 10. On-state current as a function of on-state voltage BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 8 / 13

WeEn Semiconductors BT137X-600 4Q Triac Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 9 / 13

WeEn Semiconductors BT137X-600 4Q Triac 12. Package outline BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 10 / 13

WeEn Semiconductors BT137X-600 4Q Triac Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 13. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. 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BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 11 / 13

WeEn Semiconductors BT137X-600 4Q Triac Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 12 / 13

WeEn Semiconductors BT137X-600 4Q Triac 14. Contents 1. General description .......................................................1 2. Features and benefits ...................................................1 3. Applications ...................................................................1 4. Quick reference data .....................................................1 5. Pinning information .......................................................2 6. Ordering information .....................................................2 7. Marking ...........................................................................2 8. Limiting values ..............................................................3 9. Thermal characteristics ................................................6 10. Isolation Characteristics .............................................6 11. Characteristics .............................................................7 12. Package outline .........................................................10 13. Legal information ......................................................11 14. Contents .....................................................................13 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 17 April 2018 BT137X-600 All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 17 April 2018 13 / 13

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