ACT108-600E AC Thyristor power switch 22 September 2016 Product data sheet 1. General description AC Thyristor power switch in a SOT54 plastic package with self-protective capabilities against low and high energy transients 2. Features and benefits • Exclusive negative gate triggering • Full cycle AC conduction • Remote gate separates the gate driver from the effects of the load current • Very high noise immunity • Safe clamping of low energy over-voltage transients • Self-protective turn-on during high energy voltage transients 3. Applications • Fan motor circuits • Pump motor circuits • Lower-power highly inductive, resistive and safety loads 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave; T ≤ 71 °C; Fig. 1 - - 0.8 A T(RMS) lead Static characteristics I gate trigger current V = 12 V; I = 100 mA; LD+ G-; 1 - 10 mA GT D T T = 25 °C; Fig. 6 j V = 12 V; I = 100 mA; LD- G-; 1 - 10 mA D T T = 25 °C; Fig. 6 j

WeEn Semiconductors ACT108-600E AC Thyristor power switch 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 CM common LD 2 G gate G 3 LD load CM 001aaj924 321 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version ACT108-600E TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 2 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak off-state - 600 V DRM voltage I RMS on-state current full sine wave; T ≤ 71 °C; Fig. 1 - 0.8 A T(RMS) lead I non-repetitive peak on- full sine wave; T = 25 °C; t = 20 ms; - 13 A TSM j(init) p state current Fig. 2; Fig. 3 full sine wave; T = 25 °C; t = 16.7 ms - 14.3 A j(init) p 2 2 I t I t for fusing t = 10 ms; SIN - 0.32 A²s p dI /dt rate of rise of on-state I = 20 mA - 100 A/µs T G current I peak gate current t = 20 μs - 1 A GM V peak gate voltage positive applied gate voltage - 15 V GM P average gate power over any 20 ms period - 0.1 W G(AV) T storage temperature -40 150 °C stg T junction temperature - 125 °C j V peak pulse voltage T = 25 °C; non-repetitive, off-state; ten - 2.5 kV PP j pulses on each voltage polarity; 20s or more between successive pulses;; Fig. 4 003aac803 1.0 Ptot α = 180° (W) α 0.8 α 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 IT(RMS) (A) α = conduction angle Fig. 1. Total power dissipation as a function of RMS on-state current; maximum values ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 3 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch 003aac804 10 ITSM (A) 8 6 4 IT ITSM t 2 1/f Tj(init) = 25 °C max 0 1 10 102 103 numberofcycles f = 50 Hz Fig. 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 103 003aac805 ITSM IT ITSM (A) t 102 tp Tj(init)=25°Cmax 10 1 10-5 10-4 10-3 10-2 tp(s) t ≤ 20 ms p Fig. 3. Non-repetitive peak on-state current as a function of pulse width; maximum values IEC61000-4-5Standards SurgeGenerator OpenCircuitVoltage 1.2µs/50µswaveform RGen R L 2Ω 150Ω 5µH RG LoadModel DUT Surgepulse 220Ω 003aad077 Fig. 4. Test circuit for inductive and resistive loads with conditions equivalent to IEC 61000-4-5 ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 4 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance full cycle with heatsink compound; - - 60 K/W th(j-lead) from junction to lead Fig. 5 R thermal resistance full cycle; printed-circuit board - 150 - K/W th(j-a) from junction to mounted; lead length 4 mm ambient free air 102 003aad294 Zth(j-lead) (K/W) 10 1 P 10-1 tp t 10-2 10-5 10-4 10-3 10-2 10-1 1 tp(s) 10 Fig. 5. Transient thermal impedance from junction to lead as a function of pulse width ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 5 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V; I = 100 mA; LD+ G-; 1 - 10 mA GT D T T = 25 °C; Fig. 6 j V = 12 V; I = 100 mA; LD- G-; 1 - 10 mA D T T = 25 °C; Fig. 6 j I latching current V = 12 V; I = 100 mA; LD+ G-; - - 25 mA L D G T = 25 °C; Fig. 7 j V = 12 V; I = 100 mA; LD- G-; - - 20 mA D G T = 25 °C; Fig. 7 j I holding current V = 12 V; T = 25 °C; Fig. 7 - - 20 mA H D j V on-state voltage I = 1.1 A; T = 25 °C; Fig. 8 - - 1.3 V T T j V gate trigger voltage V = 400 V; I = 100 mA; T = 125 °C 0.15 - - V GT D T j V = 12 V; I = 100 mA; T = 25 °C - - 1 V D T j I off-state current V = 600 V; T = 25 °C - - 2 µA D D j V = 600 V; T = 125 °C - - 0.2 mA D j V clamping voltage I = 0.1 mA; t = 1 ms; T = 25 °C; 650 - - V CL CL p j Fig. 9 Dynamic characteristics dV /dt rate of rise of off-state V = 402 V; T = 125 °C; (V = 67% 2000 - - V/µs D DM j DM voltage of V ); exponential waveform; gate DRM open circuit; Fig. 10 dI /dt rate of change of V = 400 V; T = 125 °C; 0.5 - - A/ms com D j commutating current I = 0.8 A; dV /dt = 20 V/µs; T(RMS) com (snubberless condition); gate open circuit; Fig. 11; Fig. 12 ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 6 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch 003aac809 003aac811 3 3 IGT (1) IL IGT(25°C) IL(25°C) 2 2 (2) 1 1 (2) (1) 0 0 -50 0 50 100 150 -50 0 50 100 150 Tj(°C) Tj(°C) (1) LD+ G- (2) LD- G- Fig. 7. Normalized latching current as a function of junction temperature Fig. 6. Normalized gate trigger current as a function of junction temperature 003aaf722 003aac817 2.0 1.2 IT (A) VCL VCL(25°C) 1.5 0.8 1.0 (1) (2) (3) 0.4 0.5 0.0 0 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 VT(V) Tj(°C) V = 0.758 V; R = 0.263 Ω o s Fig. 9. Normalized clamping voltage (upper limit) as a (1) T = 125 °C; typical values j function of junction temperature; minimum values (2) T = 125 °C; maximum values j (3) T = 25 °C; maximum values j Fig. 8. On-state current as a function of on-state voltage ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 7 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch 003aac813 003aac814 12 12 A B A 10 B 8 8 6 4 4 2 0 0 25 50 75 100 125 25 50 75 100 125 Tj(°C) Tj(°C) A = dV /dt at condition T °C A = dI /dt at condition T °C D j com j B = dV /dt at condition T [125] °C B = dI /dt at condition T [125] °C D j com j V = 400 V Fig. 10. Normalized rate of rise of off-state voltage as a D function of junction temperature Fig. 11. Normalized critical rate of rise of commutating current as a function of junction temperature 003aac815 2.0 A[B] A[spec] 1.5 1.0 0.5 0 10-1 1 10 102 B(V/µs) A [B] = dI /dt at condition B, dV /dt com com A [spec] is the data sheet value for dI /dt com turn-off time is less than 20 ms Fig. 12. Normalized critical rate of change of commutating current as a function of critical rate of change of commutating voltage; minimum values ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 8 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch 10. Package outline Fig. 13. Package outline TO-92 (SOT54) ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 9 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch Right to make changes — WeEn Semiconductors reserves the right to make changes to information published in this document, including without 11. Legal information limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Data sheet status Suitability for use — WeEn Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure Document Product Definition or malfunction of an WeEn Semiconductors product can reasonably status [1][2] status [3] be expected to result in personal injury, death or severe property or environmental damage. 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ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 10 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 11 / 12

WeEn Semiconductors ACT108-600E AC Thyristor power switch 12. Contents 1. General description......................................................1 2. Features and benefits..................................................1 3. Applications..................................................................1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values.............................................................3 8. Thermal characteristics...............................................5 9. Characteristics..............................................................6 10. Package outline..........................................................9 11. Legal information.....................................................10 © WeEn Semiconductors Co., Ltd. 2016. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 22 September 2016 ACT108-600E All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 22 September 2016 12 / 12

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