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  • 型号: APT2X30D100J
  • 制造商: American Microsemiconductor, Inc.
  • 库位|库存: xxxx|xxxx
  • 要求:
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APT2X30D100J产品简介:

ICGOO电子元器件商城为您提供APT2X30D100J由American Microsemiconductor, Inc.设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 APT2X30D100J价格参考。American Microsemiconductor, Inc.APT2X30D100J封装/规格:二极管 - 整流器 - 阵列, Diode Array 2 Independent Standard 1000V 28A Chassis Mount SOT-227-4, miniBLOC。您可以下载APT2X30D100J参考资料、Datasheet数据手册功能说明书,资料中有APT2X30D100J 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE DUAL 28A 1000V SOT-227

产品分类

二极管,整流器 - 模块

品牌

Microsemi Power Products Group

数据手册

http://www.microsemi.com/document-portal/doc_download/6157-apt2x31-30d100j-d-pdf

产品图片

产品型号

APT2X30D100J

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同If时的电压-正向(Vf)

2.3V @ 30A

不同 Vr时的电流-反向漏电流

250µA @ 1000V

二极管类型

标准

二极管配置

2 个独立式

产品目录绘图

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

ISOTOP®

其它名称

APT2X30D100JMI
APT2X30D100JMI-ND

包装

管件

反向恢复时间(trr)

290ns

安装类型

底座安装

封装/外壳

SOT-227-4,miniBLOC

标准包装

10

热阻

*

电压-DC反向(Vr)(最大值)

1000V(1kV)

电流-平均整流(Io)(每二极管)

28A

速度

快速恢复 =< 500 ns,> 200mA(Io)

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PDF Datasheet 数据手册内容提取

New Diode Data Sheet By Darel Bidwell 2 3 2 3 2 3 7 2 2 1 4 1 4 1 4 OT- ® S Anti-Parallel Parallel APT2X30D100J APT2X31D100J APT2X31D100J 1000V 28A "UL Recognized" ISOTOP® APT2X30D100J 1000V 28A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses -Switchmode Power Supply -Inverters • Soft Recovery Characteristics • Low Noise Switching • Free Wheeling Diode -Motor Controllers • Popular SOT-227 Package • Cooler Operation -Converters • Snubber Diode • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • Induction Heating • High Blocking Voltage • Increased System Power Density • High Speed Rectifiers • Low Leakage Current MAXIMUM RATINGS All Ratings: T = 25°C unless otherwise specified. C Symbol Characteristic / Test Conditions APT2X31_30D100J UNIT V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1000 Volts RRM V Maximum Working Peak Reverse Voltage RWM I Maximum Average Forward Current (T = 100°C, Duty Cycle = 0.5) 28 F(AV) C I RMS Forward Current (Square wave, 50% duty) 39 Amps F(RMS) I Non-Repetitive Forward Surge Current (T = 45°C, 8.3ms) 210 FSM J T ,T Operating and StorageTemperature Range -55 to 175 J STG °C T Lead Temperature for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I = 30A 1.9 2.3 F V Forward Voltage I = 60A 2.2 Volts F F I = 30A, T = 125°C 1.7 F J V = V Rated 250 R R 5 IRM Maximum Reverse Leakage Current VR = VR Rated, TJ = 125°C 500 µA 6-200 D CT Junction Capacitance, VR = 200V 32 pF v e R 3 0 0 APT Website - http://www.advancedpower.com 0 3- 5 0

New Diode Data Sheet By Darel Bidwell DYNAMIC CHARACTERISTICS APT2X31_30D100J Symbol Characteristic Test Conditions MIN TYP MAX UNIT trr Reverse Recovery Time IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C - 29 ns t Reverse Recovery Time - 290 rr I = 30A, di /dt = -200A/µs Q Reverse Recovery Charge F F - 670 nC rr V = 667V, T = 25°C R C I Maximum Reverse Recovery Current - 5 - Amps RRM t Reverse Recovery Time - 390 ns rr I = 30A, di /dt = -200A/µs Qrr Reverse Recovery Charge F F - 2350 nC V = 667V, T = 125°C R C I Maximum Reverse Recovery Current - 11 - Amps RRM trr Reverse Recovery Time - 160 ns I = 30A, di /dt = -1000A/µs Q Reverse Recovery Charge F F - 3500 nC rr V = 667V, T = 125°C R C IRRM Maximum Reverse Recovery Current - 38 Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT R Junction-to-Case Thermal Resistance 1.1 θJC °C/W R Junction-to-Ambient Thermal Resistance 20 θJA 1.03 oz W Package Weight T 29.2 g 10 lb•in Torque Maximum Mounting Torque 1.1 N•m APT Reserves the right to change, without notice, the specifications and information contained herein. 1.20 C/W) 1.00 0.9 E (° C N 0.80 0.7 A D E MP 0.60 0.5 L I Note: A ERM 0.40 0.3 PDM t1 TH t2 , θJC 0.20 0.1 Duty Factor D = t1/t2 Z 0.05 SINGLE PULSE Peak TJ = PDM x ZθJC + TC 0 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION RC MODEL Junction temp (°C) 0.0291 °C/W 0.00306 J/°C 5 0 0 Power 2 0.468 °C/W 0.0463 J/°C 6- (watts) D v Re 0.341 °C/W 0.267 J/°C 3 00 Case temperature (°C) 0 3- 5 FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL 0

TYPICAL PERFORMANCE CURVES APT2X31_30D100J 100 400 TJ = 125°C 90 E 350 60A VR = 667V M ENT 80 Y TI 300 RR 70 ER 30A CU 60 OV 250 WARD (A) 50 TJ = 150°C SE REC(ns) 200 15A OR 40 ER 150 F V I, F 3200 TJ = 125°C TTJ = = - 5255°°CC t, RErr 100 J 50 10 0 0 0 0.5 1 1.5 2 2.5 3. 0 200 400 600 800 1000 1200 V , ANODE-TO-CATHODE VOLTAGE (V) -di /dt, CURRENT RATE OF CHANGE(A/µs) F F Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change E 6000 TJ = 125°C NT 45 TJ = 125°C RG VR = 667V RE 40 VR = 667V A 5000 R 60A CH 60A CU 35 Y Y ER 4000 ER 30 V V RECO(nC) 3000 30A RECO(A) 25 SE SE 20 30A R R E 2000 E 15 V V E 15A E 15A R R 10 Q, rr 1000 , RM R 5 I 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 -di /dt, CURRENT RATE OF CHANGE (A/µs) -di /dt, CURRENT RATE OF CHANGE (A/µs) F F Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change 1.2 50 Q Duty cycle = 0.5 rr trr 45 TJ = 175°C S 1.0 AMIC PARAMETERalized to 1000A/µs) 00..86 trr IRRM I(A) F(AV) 4332205050 Nm K, DYf(Nor 0.4 Qrr 15 10 0.2 5 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 175 T, JUNCTION TEMPERATURE (°C) Case Temperature (°C) J Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature 300 E C 250 N A T CI 200 A P N CA(pF) 150 O TI NC 100 05 U 0 J 2 C, J 50 D 6- v e 01 10 100 200 3 R Figure 8. JuVnRc,t RioEnV CEaRpSaEc iVtaOnLcTeA vGs.E R (eVv) erse Voltage 3-000 5 0

APT2X31_30D100J Vr +18V diF/dt Adjust APT10035LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 I - Forward Conduction Current F 1 4 2 di /dt - Rate of Diode Current Change Through Zero Crossing. F Zero 3 I - Maximum Reverse Recovery Current. RRM 5 0.25 IRRM 4 trr - Reverse Recovery Time, measured from zero crossing where diode 3 current goes from positive to negative, to the point at which the straight 2 line through I and 0.25 I passes through zero. RRM RRM 5 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 31.5 (1.240) 12.2 (.480) 31.7 (1.248) 8.9 (.350) 7.8 (.307) W=4.1 (.161) 9.6 (.378) 8.2 (.322) W=4.3 (.169) Hex Nut M4 H100 H=4.8 (.187) (4 places) H=4.9 (.193) (4 places) r =(2 4 p.0la (c.1e5s)7 ) 4.0 (.157) 0.75 (.030) 12.6 (.496) 2255..24 ((01..909020)) 4.2 (.165) 0.85 (.033) 12.8 (.504) (2 places) 3.3 (.129) 1.95 (.077) 3.6 (.143) 2.14 (.084) 2005 113450...911 (((..155.891748))5) APATn2tiX-p30aDra1l0le0lJ APTP2Xa3ra1lDle1l00J 6- 30.3 (1.193) Anode 2 Cathode 1Cathode 1 Anode 1 D 3388..02 ((11..459064)) v e R 3 Dimensions in Millimeters and (Inches) Cathode 2 Anode 1 Cathode 2 Anode 2 0 0 3-0 ISOTOP® is a Registered Tr ademark of S GS Thomson . APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 05 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.