T ® c c anceram hIP aPacITors TANCERAM® chip capacitors can replace tantalum capacitors in many applications and offer several key advantages over traditional tantalums. Because TANCERAM® capacitors exhibit extremely low ESR, equivalent circuit performance can often be achieved using considerably lower capacitance values. Low DC leakage reduces current drain, extending the battery life of portable products. TANCERAM® high DC breakdown voltage ratings offer improved reliability and eliminate large voltage de-rating common when designing with tantalums. adVantageS • Low ESR • Low DC Leakage • Higher Surge Voltage • Non-polarized Devices • Reduced CHIP Size • Improved Reliability • Higher Insulation Resistance • Higher Ripple Current applicationS • Switching Power Supply Smoothing (Input/Output) • Backlighting Inverters • DC/DC Converter Smoothing (Input/Output) • General Digital Circuits How to order tanceram® Part number written: 100R15X106MV4E 100 R15 X 106 M V 4 E VOLTAGE SIZE DIELECTRIC CAPACITANCE TOLERANCE TERMINATION MARKING PACKING 6R3 = 6.3 V See Chart W = X7R 1st two digits are K = ±10% V = Nickel Barrier 4 = Unmarked Code Type Reel 100 = 10 V X = X5R significant; third digit M = ±20% with 100% Tin E Plastic 7” 160 = 16 V denotes number of Plating (Matte) T Paper 7” 250 = 25 V zeros. Tape specifications 500 = 50 V 105 = 1.00 µF T = SnPb* conform to EIA 101 = 100 V 476 = 47.0 µF (*available on RS481 107 = 100 µF select parts) 18 www.johansondielectrics.com

DIELECTRIC T ® c c W L anceram hIP aPacITors W (X7R) T E/B X (X5R) caSe Size capacitance Selection EIA / JDI INCHES (mm) VDC 1.0 µF 2.2 µF 3.3 µF 4.7 µF 10 µF 22 µF 47 µF 100 µF 105 225 335 475 106 226 476 107 L .040 ±.004 (1.02 ±.10) 16 0402 W .020 ±.004 (0.51 ±.10) 10 R07 T .025 Max. (0.64) EB .008 ±.004 (0.20±.10) 6.3 25 L .063 ±.008 (1.60 ±.20) 0603 W .032 ±.008 (0.81 ±.20) 16 R14 T .035 Max. (0.89) 10 EB .010±.005 (.25±.13) 6.3 50 0805 L .080 ±.010 (2.03 ±.25) 25 W .050 ±.010 (1.27 ±.25) 16 R15 T .060 Max. (1.52) EB .020±.010 (0.51±.25 ) 10 6.3 50 35 L .125 ±.013 (3.17 ±.35) 1206 W .062 ±.010 (1.57 ±.25) 25 R18 T .070 Max. (1.78) 16 EB .020 +.015-0.01 (0.51+.38-.25) 10 6.3 100 50 1210 L .126 ±.016 (3.20 ±.40) 35 W .098 ±.012 (2.50 ±.30) 25 S41 T .110 Max. (2.8) EB .020 +.015-.010 (0.51+.38-.25) 16 10 6.3 L .177 ±.016 (4.50 ±.40) 100 1812 W .126 ±.015 (3.20 ±.38) 50 S43 T .140 Max. (3.55) EB .035 ±.020 (0.89 ±0.51) 25 W X W X W X W X W X W X W X W X “K” OR “M” TOLERANCE ONLY “M” TOLERANCE electrical cHaracteriSticS DIELECTRIC: X7R X5R TEMPERATURE COEFFICIENT: ±15% (-55 to +125°C) ±15% (-55 to +85°C) For ≥ 50 VDC: 5% max. For ≥ 50 VDC: 5% max. DISSIPATION FACTOR: For ≤ 35 VDC: 10% max. For ≤ 35 VDC: 10% max. INSULATION RESISTANCE (MIN. @ 25°C, WVDC) 100 ΩF or 10 GΩ, whichever is less DIELECTRIC STRENGTH: 2.5 X WVDC, 25°C, 50mA max. Capacitance values ≤ 10 µF: 1.0kHz±50Hz @ 1.0±0.2 Vrms TEST CONDITIONS: Capacitance values > 10 µF: 120Hz±10Hz @ 0.5V±0.1 Vrms OTHER: See page 79 for additional dielectric specifications. www.johansondielectrics.com 19