ICGOO在线商城 > 分立半导体产品 > 晶体管 - 双极 (BJT) - 单 > 2N5550
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2N5550产品简介:
ICGOO电子元器件商城为您提供2N5550由Central Semiconductor设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 2N5550价格参考。Central Semiconductor2N5550封装/规格:晶体管 - 双极 (BJT) - 单, 双极 (BJT) 晶体管 NPN 140V 600mA 300MHz 625mW 通孔 TO-92-3。您可以下载2N5550参考资料、Datasheet数据手册功能说明书,资料中有2N5550 详细功能的应用电路图电压和使用方法及教程。
2N5550是ON Semiconductor生产的一款双极型晶体管(BJT),属于单晶体管类型。它广泛应用于各种电子电路中,尤其适合用于音频放大、开关应用以及低功率信号处理等领域。 1. 音频放大:2N5550常被用作音频放大器中的前置放大级或驱动级。由于其良好的线性特性和较高的增益,能够有效地放大微弱的音频信号,确保输出声音清晰且不失真。适用于便携式音响设备、耳机放大器等产品中。 2. 开关应用:在数字电路和控制电路中,2N5550可以作为开关元件使用。例如,在继电器驱动、LED驱动、电机控制等场景下,通过改变基极电流来控制集电极与发射极之间的导通状态,实现对负载的有效控制。 3. 信号调理:对于需要处理小幅度模拟信号的应用场合,如传感器信号放大、滤波电路等,2N5550凭借其较低的噪声系数和较高的输入阻抗特性,成为理想的选择之一。 4. 电源管理:在一些简单的直流电源管理系统中,2N5550可用于稳压电路或者作为电流源的一部分,帮助维持稳定的输出电压或电流水平。 总之,2N5550因其性能稳定可靠、成本低廉而备受青睐,适用于多种中小型功率的电子项目开发与实际应用当中。需要注意的是,在具体设计时要根据工作环境要求选择合适的散热措施,并遵循相关电气规范以确保安全性和稳定性。
| 参数 | 数值 |
| 品牌 | Central Semiconductor |
| 产品目录 | 半导体 |
| 描述 | 两极晶体管 - BJT NPN Gen Pur SS |
| 产品分类 | 分离式半导体 |
| 产品手册 | |
| 产品图片 |
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| rohs | 过渡期间 |
| 产品系列 | 晶体管,两极晶体管 - BJT,Central Semiconductor 2N5550 |
| 产品型号 | 2N5550 |
| 产品种类 | 两极晶体管 - BJT |
| 发射极-基极电压VEBO | 6 V |
| 商标 | Central Semiconductor |
| 增益带宽产品fT | 300 MHz |
| 安装风格 | Through Hole |
| 封装 | Bulk |
| 封装/箱体 | TO-92-3 |
| 工厂包装数量 | 2500 |
| 晶体管极性 | NPN |
| 最大功率耗散 | 625 mW |
| 最大工作温度 | + 150 C |
| 最大直流电集电极电流 | 0.6 A |
| 最小工作温度 | - 65 C |
| 直流集电极/BaseGainhfeMin | 60 at 1 mA at 5 V, 60 at 10 mA at 5 V, 20 at 50 mA at 5 V |
| 系列 | 2N5550 |
| 配置 | Single |
| 集电极—发射极最大电压VCEO | 140 V |
| 集电极—基极电压VCBO | 160 V |
| 集电极—射极饱和电压 | 0.25 V |
| 集电极连续电流 | 0.6 A |
2N5550 2N5551 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5550 2N5551 UNITS Collector-Base Voltage VCBO 160 180 V Collector-Emitter Voltage VCEO 140 160 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 600 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W Thermal Resistance JC 125 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5550 2N5551 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=100V - 100 - - nA ICBO VCB=120V - - - 50 nA ICBO VCB=100V, TA=100°C - 100 - - μA ICBO VCB=120V, TA=100°C - - - 50 μA IEBO VEB=4.0V - 50 - 50 nA BVCBO IC=100μA 160 - 180 - V BVCEO IC=1.0mA 140 - 160 - V BVEBO IE=10μA 6.0 - 6.0 - V VCE(SAT) IC=10mA, IB=1.0mA - 0.15 - 0.15 V VCE(SAT) IC=50mA, IB=5.0mA - 0.25 - 0.20 V VBE(SAT) IC=10mA, IB=1.0mA - 1.0 - 1.0 V VBE(SAT) IC=50mA, IB=5.0mA - 1.2 - 1.0 V hFE VCE=5.0V, IC=1.0mA 60 - 80 - hFE VCE=5.0V, IC=10mA 60 250 80 250 hFE VCE=5.0V, IC=50mA 20 - 30 - hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200 50 200 fT VCE=10V, IC=10mA, f=100MHz 100 300 100 300 MHz Cob VCB=10V, IE=0, f=1.0MHz - 6.0 - 6.0 pF Cib VBE=0.5V, IC=0, f=1.0MHz - 30 - 20 pF NF VCE=5.0V, IC=250μA, RS=1.0Ω, f=10Hz to 15.7kHz - 10 - 8.0 dB R1 (2-December 2014)
2N5550 2N5551 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (2-December 2014) www.centralsemi.com
2N5550 2N5551 SILICON NPN TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (2-December 2014) www.centralsemi.com
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