2N5550 2N5551 www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5550 2N5551 UNITS Collector-Base Voltage VCBO 160 180 V Collector-Emitter Voltage VCEO 140 160 V Emitter-Base Voltage VEBO 6.0 V Continuous Collector Current IC 600 mA Power Dissipation PD 625 mW Power Dissipation (TC=25°C) PD 1.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance JA 200 °C/W Thermal Resistance JC 125 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5550 2N5551 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS ICBO VCB=100V - 100 - - nA ICBO VCB=120V - - - 50 nA ICBO VCB=100V, TA=100°C - 100 - - μA ICBO VCB=120V, TA=100°C - - - 50 μA IEBO VEB=4.0V - 50 - 50 nA BVCBO IC=100μA 160 - 180 - V BVCEO IC=1.0mA 140 - 160 - V BVEBO IE=10μA 6.0 - 6.0 - V VCE(SAT) IC=10mA, IB=1.0mA - 0.15 - 0.15 V VCE(SAT) IC=50mA, IB=5.0mA - 0.25 - 0.20 V VBE(SAT) IC=10mA, IB=1.0mA - 1.0 - 1.0 V VBE(SAT) IC=50mA, IB=5.0mA - 1.2 - 1.0 V hFE VCE=5.0V, IC=1.0mA 60 - 80 - hFE VCE=5.0V, IC=10mA 60 250 80 250 hFE VCE=5.0V, IC=50mA 20 - 30 - hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 200 50 200 fT VCE=10V, IC=10mA, f=100MHz 100 300 100 300 MHz Cob VCB=10V, IE=0, f=1.0MHz - 6.0 - 6.0 pF Cib VBE=0.5V, IC=0, f=1.0MHz - 30 - 20 pF NF VCE=5.0V, IC=250μA, RS=1.0Ω, f=10Hz to 15.7kHz - 10 - 8.0 dB R1 (2-December 2014)

2N5550 2N5551 SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R1 (2-December 2014) www.centralsemi.com

2N5550 2N5551 SILICON NPN TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (2-December 2014) www.centralsemi.com

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