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2 N 3 9 October 2014 0 4 / M M B T 2N3904 / MMBT3904 / PZT3904 3 9 0 NPN General-Purpose Amplifier 4 / P Z T Description 3 9 0 4 This device is designed as a general-purpose amplifier — and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. N P N G e n 2N3904 MMBT3904 PZT3904 e r a l C -P C u r p E o E s C e TO-92 SOT-23 B SOT-223 B A EBC Mark:1A m p l i f i e r Ordering Information Part Number Marking Package Packing Method Pack Quantity 2N3904BU 2N3904 TO-92 3L Bulk 10000 2N3904TA 2N3904 TO-92 3L Ammo 2000 2N3904TAR 2N3904 TO-92 3L Ammo 2000 2N3904TF 2N3904 TO-92 3L Tape and Reel 2000 2N3904TFR 2N3904 TO-92 3L Tape and Reel 2000 MMBT3904 1A SOT-23 3L Tape and Reel 3000 PZT3904 3904 SOT-223 4L Tape and Reel 2500 © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0

2 N Absolute Maximum Ratings(1), (2) 3 9 0 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- 4 ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- / M tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The M absolute maximum ratings are stress ratings only. Values are at T = 25°C unless otherwise noted. A B T Symbol Parameter Value Unit 3 9 V Collector-Emitter Voltage 40 V 0 CEO 4 VCBO Collector-Base Voltage 60 V / P VEBO Emitter-Base Voltage 6.0 V Z T I Collector Current - Continuous 200 mA 3 C 9 T T Operating and Storage Junction Temperature Range -55 to 150 °C 0 J, STG 4 — Notes: 1. These ratings are based on a maximum junction temperature of 150°C. N P 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or N low-duty cycle operations. G e n e r a Thermal Characteristics l - P Values are at T = 25°C unless otherwise noted. u A r p Maximum o Symbol Parameter Unit s 2N3904 MMBT3904(3) PZT3904(4) e A Total Device Dissipation 625 350 1,000 mW m P D Derate Above 25°C 5.0 2.8 8.0 mW/°C p l i RθJC Thermal Resistance, Junction to Case 83.3 °C/W fie RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W r Notes: 3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 4. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm, mounting pad for the collector lead minimum 6 cm2. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 2

2 N Electrical Characteristics 3 9 0 Values are at TA = 25°C unless otherwise noted. 4 / Symbol Parameter Conditions Min. Max. Unit M M OFF CHARACTERISTICS B T V Collector-Emitter Breakdown Voltage I = 1.0 mA, I = 0 40 V (BR)CEO C B 3 V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 60 V 90 4 V Emitter-Base Breakdown Voltage I = 10 μA, I = 0 6.0 V (BR)EBO E C / P I Base Cut-Off Current V = 30 V, V = 3 V 50 nA BL CE EB Z T ICEX Collector Cut-Off Current VCE = 30 V, VEB = 3 V 50 nA 3 9 ON CHARACTERISTICS(5) 0 4 IC = 0.1 mA, VCE = 1.0 V 40 — I = 1.0 mA, V = 1.0 V 70 C CE N h DC Current Gain I = 10 mA, V = 1.0 V 100 300 P FE C CE N IC = 50 mA, VCE = 1.0 V 60 G e IC =100 mA, VCE = 1.0V 30 n e V (sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.2 V ra CE IC = 50 mA, IB = 5.0 mA 0.3 l-P I = 10 mA, I = 1.0 mA 0.65 0.85 u V (sat) Base-Emitter Saturation Voltage C B V r BE p IC = 50 mA, IB = 5.0 mA 0.95 o s SMALL SIGNAL CHARACTERISTICS e I = 10 mA, V = 20 V, A f Current Gain - Bandwidth Product C CE 300 MHz m T f = 100 MHz p Cobo Output Capacitance Vf =C B1 0=0 5 k.0H zV, IE = 0, 4.0 pF lifie r V = 0.5 V, I = 0, C Input Capacitance EB C 8.0 pF ibo f = 100 kHz I = 100 μA, V = 5.0 V, C CE NF Noise Figure R = 1.0 kΩ, 5.0 dB S f = 10 Hz to 15.7 kHz SWITCHING CHARACTERISTICS td Delay Time VCC = 3.0 V, VBE = 0.5 V 35 ns tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns ts Storage Time VCC = 3.0 V, IC = 10 mA, 200 ns tf Fall Time IB1 = IB2 = 1.0 mA 50 ns Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 3

2 N Typical Performance Characteristics 3 9 0 4 / M M V) T GAIN 500 TAGE ( BT3 N V = 5V L 9 RE 400 CE VO 0.15 β = 10 0 R R 4 ED CU 300 125 °C 25 °C MITTE 0.1 125 °C / PZ S E PUL 200 OR- 25 °C T3 CAL 100 - 40 °C LECT 0.05 904 YPI OL - 40 °C — T C h - FE 00.1 I C - COL1LECTOR CURRE10NT (mA) 100 V - CESAT 0.1 I C - COL1LECTOR CURRE10NT (mA) 100 NP N Figure 1. Typical Pulsed Current Gain vs. Collector Figure 2. Collector-Emitter Saturation Voltage vs. G Current Collector Current e n e GE (V) 1 β = 10 AGE (V) 1 V = 5V ral-P A T CE u T L L O r TER VO 0.8 - 40 °C R ON V 0.8 - 40 °C 25 °C pose E-EMIT 0.6 25 °C EMITTE 0.6 125 °C Am AS 125 °C E- 0.4 p V - BBESAT0.40.1 I - COL1LECTOR CURR1E0NT (mA) 100 V - BASBE(ON)0.20.1 I - COL1LECTOR CURRE1N0T (mA) 100 lifier C C Figure 3. Base-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage vs. vs. Collector Current Collector Current A) 500 10 n f = 1.0 MHz NT ( 100 VC B = 30V CURRE 10 CE (pF) 45 OLLECTOR 0.11 CAPACITAN 23 C i bo Cobo C I - CBO 25 50 75 100 125 150 1 TA - AMBIENT TEMPERATURE ( °C) 0.1 REVE1RSE BIAS VOLTA1G0E (V) 100 Figure 5. Collector Cut-Off Current vs. Figure 6. Capacitance vs. Reverse Bias Voltage Ambient Temperature © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 4

2 N Typical Performance Characteristics (Continued) 3 9 0 4 / M M 12 12 I C = 1.0 mA V C E = 5.0V I C = 1.0 mA B B) 10 R S = 200Ω B) 10 T3 URE (d 8 RI CS == 510.0 μ kAΩ URE (d 8 I C = 5.0 mA I C = 50 μA 904 E FIG 6 I RC S = =0 .250 m0ΩA E FIG 6 / P S S Z NF - NOI 24 I C = 100 μA, R S = 500 Ω NF - NOI 24 I C = 100 μA T3904 — 0 0 0.1 1 10 100 0.1 1 10 100 f - FREQUENCY (kHz) R S - SOURCE RESISTANCE ( k ΩΩ ) N P Figure 7. Noise Figure vs. Frequency Figure 8. Noise Figure vs. Source Resistance N G e n e r 1 a GAIN (dB) 34455050 hfe 4620000 θθ - D PATION (W) 0.75 TO-92 SOT-223 l-Purpo h - CURRENT fe11223050505 IV C C E= =1 04 0mVA θ 11111840268000000 EGREES P - POWER DISSID0.02.55 SOT-23 se Amplif 01 10 100 1000 00 25 50 75 100 125 150 ier f - FREQUENCY (MHz) TEMPERATURE ( o C) Figure 9. Current Gain and Phase Angle vs. Figure 10. Power Dissipation vs. Frequency Ambient Temperature 500 500 I = I = Ic V = 40V I = I = Ic B1 B2 10 CC B1 B2 10 40V s) n ME (nS) 100 15V t r @V C C = 3.0V E TIME ( 100 T J = 125°C T J = 25°C TI 2.0V t - RISr 10 10 t d @V C B = 0V 5 5 1 10 100 1 10 100 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) Figure 11. Turn-On Time vs. Collector Current Figure 12. Rise Time vs. Collector Current © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 5

2 N Typical Performance Characteristics (Continued) 3 9 0 4 / M M 500 500 B I = I = Ic I = I = Ic T ORAGE TIME (ns) 100 T J T J= 2=5 1°C25°C B1 B2 10 FALL TIME (ns) 100 T J = 2T5 J ° C = 125°C BV1C C B=2 40V10 3904 / PZT3 t - STS 10 t - f 10 904 — 51 10 100 51 10 100 N I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) P N Figure 13. Storage Time vs. Collector Current Figure 14. Fall Time vs. Collector Current G e n e r a 500 Vf C= E 1 =.0 1 k0H Vz hos) 100 Vf C= E 1 =.0 1 k0H Vz l-P N T A = 25o C μE ( m T A = 25o C urp AI C o RENT G 100 MITTAN 10 se A R D m U A C T p h - fe UTPU lifi O e 10 h - oe 1 r 0.1 1 10 0.1 1 10 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) Figure 15. Current Gain Figure 16. Output Admittance 100 V C E = 10 V _410 ) 10 V C E = 10 V ΩE (k ) fT = A 1=. 02 k5o HCz ATIO (x 7 Tf =A 1=. 02 5ko HCz C R 5 N 10 K A C 4 D A E B MP ED 3 PUT I 1 E FE 2 N G h - Iie VOLTA 0.10.1 1 10 h - re 10.1 1 10 I C - COLLECTOR CURRENT (mA) I C - COLLECTOR CURRENT (mA) Figure 17. Input Impedance Figure 18. Voltage Feedback Ratio © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 6

2 N Test Circuits 3 9 0 4 / 3.0 V M M B T 300 ns 275 ΩΩΩΩΩ 3 9 10.6 V 0 4 Duty Cycle ===== 2% 10 KΩΩΩΩΩ / P 0 Z - 0.5 V C1 <<<<< 4.0 pF T 3 <<<<< 1.0 ns 9 0 4 — Figure 19. Delay and Rise Time Equivalent Test Circuit N P N G 3.0 V e n e 10 <<<<< t1 <<<<< 500 μμμμμs t1 10.9 V 275 ΩΩΩΩΩ ral - P Duty Cycle ===== 2% u r p 0 10 KΩΩΩΩΩ o s C <<<<< 4.0 pF e 1 A - 9.1 V 1N916 m <<<<< 1.0 ns p l i f i Figure 20. Storage and Fall Time Equivalent Test Circuit e r © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 7

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6.70 B 6.20 0.10 C B 3.10 2.90 3.25 4 1.90 A 3.70 6.10 3.30 1.90 1 3 0.84 0.60 2.30 0.95 2.30 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX 0.08 C 7.30 C 0.10 6.70 0.00 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. R0.15±0.05 10° C) DIMENSIONS DO NOT INCLUDE BURRS GAGE 5° OR MOLD FLASH. MOLD FLASH OR BURRS R0.15±0.05 DOES NOT EXCEED 0.10MM. PLANE D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. 0.35 10° E) LANDPATTERN NAME: SOT230P700X180-4BN 0° TYP 0.20 F) DRAWING FILENAME: MKT-MA04AREV3 0.25 10° 5° 0.60 MIN SEATING 1.70 PLANE DETAIL A SCALE: 2:1

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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free ON Semiconductor Website: www.onsemi.com Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Europe, Middle East and Africa Technical Support: Order Literature: http://www.onsemi.com/orderlit Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Japan Customer Focus Center For additional information, please contact your local Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative © Semiconductor Components Industries, LLC www.onsemi.com www.onsemi.com 1

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: O N Semiconductor: 2N3904CTA 2N3904CBU 2N3904NLBU 2N3904_D11Z 2N3904_D26Z 2N3904_D27Z 2N3904_D74Z 2N3904_D75Z 2N3904RA 2N3904RM 2N3904RP 2N3904_D28Z 2N3904BU 2N3904_J25Z 2N3904_J18Z 2N3904TAR 2N3904TFR 2N3904TA 2N3904_J05Z 2N3904TF 2N3904_D27ZS00Z 2N3904_J61Z 2N3904_D10Z 2N3904_D81Z 2N3904_J61Z_Q 2N3904_J05Z_Q 2N3904_D81Z_Q 2N3904_D10Z_Q