1N5913B Series 3 W DO-41 Surmetic 30 Zener Voltage Regulators This is a complete series of 3 W Zener diodes with limits and excellentoperatingcharacteristicsthatreflectthesuperiorcapabilities of silicon-oxide passivated junctions. All this in an axial-lead, www.onsemi.com transfer-moldedplasticpackagethatoffersprotectioninallcommon environmentalconditions. Features Cathode Anode  ZenerVoltageRange- 3.3Vto200V  ESDRatingofClass3(>16KV)perHumanBodyModel  SurgeRatingof98W@1ms  MaximumLimitsGuaranteedonuptoSixElectricalParameters  PackageNoLargerthantheConventional1WPackage AXIALLEAD CASE59  Pb-FreePackagesareAvailable PLASTIC STYLE1 MechanicalCharacteristics CASE:Voidfree,transfer-molded,thermosettingplastic MARKINGDIAGRAM FINISH:Allexternalsurfacesarecorrosionresistantandleadsare readilysolderable A MAXIMUMLEADTEMPERATUREFORSOLDERINGPURPOSES: 1N 260C,1/16fromthecasefor10seconds 59xxB YYWWG POLARITY:Cathodeindicatedbypolarityband G MOUNTINGPOSITION:Any A =AssemblyLocation 1N59xxB =DeviceNumber MAXIMUMRATINGS YY =Year Rating Symbol Value Unit WW =WorkWeek G =Pb-FreePackage Max.SteadyStatePowerDissipation PD 3 W (Note:Microdotmaybeineitherlocation) @TL=75C,LeadLength=3/8 Derateabove75C 24 mW/C ORDERINGINFORMATION SteadyStatePowerDissipation PD 1 W @TA=50C Device Package Shipping† Derateabove50C 6.67 mW/C 1N59xxB,G AxialLead 2000Units/Box OperatingandStorage TJ,Tstg -65to C (Pb-Free) TemperatureRange +200 1N59xxBRL,G AxialLead 6000/Tape&Reel StressesexceedingthoselistedintheMaximumRatingstablemaydamagethe (Pb-Free) device.Ifanyoftheselimitsareexceeded,devicefunctionalityshouldnotbe assumed,damagemayoccurandreliabilitymaybeaffected. †Forinformationontapeandreelspecifications, includingpartorientationandtapesizes,please refertoourTapeandReelPackagingSpecification Brochure,BRD8011/D. *ForadditionalinformationonourPb-Freestrategyandsolderingdetails,please download the ON Semiconductor Soldering and Mounting Techniques ReferenceManual,SOLDERRM/D.  SemiconductorComponentsIndustries,LLC,2006 1 PublicationOrderNumber: December,2019- Rev.7 1N5913B/D

1N5913B Series ELECTRICALCHARACTERISTICS I (TL=30Cunlessotherwisenoted, VF=1.5VMax@IF=200mAdcforalltypes) IF Symbol Parameter VZ ReverseZenerVoltage@IZT IZT ReverseCurrent ZZT MaximumZenerImpedance@IZT VZVR V IR VF IZK ReverseCurrent IZT ZZK MaximumZenerImpedance@IZK IR ReverseLeakageCurrent@VR VR BreakdownVoltage IF ForwardCurrent VF ForwardVoltage@IF ZenerVoltageRegulator IZM MaximumDCZenerCurrent www.onsemi.com 2

1N5913B Series ELECTRICALCHARACTERISTICS(TL=30Cunlessotherwisenoted,VF=1.5VMax@IF=200mAdcforalltypes) ZenerVoltage(Note2) ZenerImpedance(Note3) LeakageCurrent Device† Device VZ(Volts) @IZT ZZT@IZT ZZK@IZK IR@VR IZM (Note1) Marking Min Nom Max mA Ω Ω mA mAMax Volts mA 1N5913B,G 1N5913B 3.14 3.3 3.47 113.6 10 500 1 100 1 454 1N5917B,G 1N5917B 4.47 4.7 4.94 79.8 5 500 1 5 1.5 319 1N5919B,G 1N5919B 5.32 5.6 5.88 66.9 2 250 1 5 3 267 1N5920B,G 1N5920B 5.89 6.2 6.51 60.5 2 200 1 5 4 241 1N5921B,G 1N5921B 6.46 6.8 7.14 55.1 2.5 200 1 5 5.2 220 1N5923B,G 1N5923B 7.79 8.2 8.61 45.7 3.5 400 0.5 5 6.5 182 1N5924B,G 1N5924B 8.65 9.1 9.56 41.2 4 500 0.5 5 7 164 1N5925B,G 1N5925B 9.50 10 10.50 37.5 4.5 500 0.25 5 8 150 1N5926B,G 1N5926B 10.45 11 11.55 34.1 5.5 550 0.25 1 8.4 136 1N5927B,G 1N5927B 11.40 12 12.60 31.2 6.5 550 0.25 1 9.1 125 1N5929B,G 1N5929B 14.25 15 15.75 25.0 9 600 0.25 1 11.4 100 1N5930B,G 1N5930B 15.20 16 16.80 23.4 10 600 0.25 1 12.2 93 1N5931B,G 1N5931B 17.10 18 18.90 20.8 12 650 0.25 1 13.7 83 1N5932B,G 1N5932B 19.00 20 21.00 18.7 14 650 0.25 1 15.2 75 1N5933B,G 1N5933B 20.90 22 23.10 17.0 17.5 650 0.25 1 16.7 68 1N5934B,G 1N5934B 22.80 24 25.20 15.6 19 700 0.25 1 18.2 62 1N5935B,G 1N5935B 25.65 27 28.35 13.9 23 700 0.25 1 20.6 55 1N5936B,G 1N5936B 28.50 30 31.50 12.5 28 750 0.25 1 22.8 50 1N5937B,G 1N5937B 31.35 33 34.65 11.4 33 800 0.25 1 25.1 45 1N5938B,G 1N5938B 34.20 36 37.80 10.4 38 850 0.25 1 27.4 41 1N5940B,G 1N5940B 40.85 43 45.15 8.7 53 950 0.25 1 32.7 34 1N5941B,G 1N5941B 44.65 47 49.35 8.0 67 1000 0.25 1 35.8 31 1N5942B,G 1N5942B 48.45 51 53.55 7.3 70 1100 0.25 1 38.8 29 1N5943B,G 1N5943B 53.20 56 58.80 6.7 86 1300 0.25 1 42.6 26 1N5944B,G 1N5944B 58.90 62 65.10 6.0 100 1500 0.25 1 47.1 24 1N5946B,G 1N5946B 71.25 75 78.75 5.0 140 2000 0.25 1 56 20 1N5947B,G 1N5947B 77.90 82 86.10 4.6 160 2500 0.25 1 62.2 18 1N5948B,G 1N5948B 86.45 91 95.55 4.1 200 3000 0.25 1 69.2 16 1N5950B,G 1N5950B 104.5 110 115.5 3.4 300 4000 0.25 1 83.6 13 1N5951B,G 1N5951B 114 120 126 3.1 380 4500 0.25 1 91.2 12 1N5952B,G 1N5952B 123.5 130 136.5 2.9 450 5000 0.25 1 98.8 11 1N5953B,G 1N5953B 142.5 150 157.5 2.5 600 6000 0.25 1 114 10 1N5954B,G 1N5954B 152 160 168 2.3 700 6500 0.25 1 121.6 9 1N5955B,G 1N5955B 171 180 189 2.1 900 7000 0.25 1 136.8 8 1N5956B,G 1N5956B 190 200 210 1.9 1200 8000 0.25 1 152 7 Deviceslistedinbold,italicareONSemiconductorPreferreddevices.Preferreddevicesarerecommendedchoicesforfutureuseandbestoverallvalue. †The“G’’suffixindicatesPb-Freepackageavailable. 1. TOLERANCEANDTYPENUMBERDESIGNATION Tolerancedesignation- devicetoleranceof5%areindicatedbya“B”suffix. 2. ZENERVOLTAGE(VZ)MEASUREMENT ONSemiconductorguaranteesthezenervoltagewhenmeasuredat90secondswhilemaintainingtheleadtemperature(TL)at30C1C, 3/8fromthediodebody. 3. ZENERIMPEDANCE(ZZ)DERIVATION Thezenerimpedanceisderivedfrom60secondsACvoltage,whichresultswhenanACcurrenthavinganrmsvalueequalto10%ofthe DCzenercurrent(IZTorIZK)issuperimposedonIZTorIZK. www.onsemi.com 3

1N5913B Series S) 5 T L=LEADLENGTH T WA L=1/8 TOHEATSINK ( 4 N O TI L=3/8 A P 3 SI S DI E 2 T L=1 A T S Y 1 D A E T S 0 ,D 0 20 40 60 80 100 120 140 160 180 200 P TL,LEADTEMPERATURE(C) Figure1.PowerTemperatureDeratingCurve 30 E C N 20 A D=0.5 STW) ESIC/10 LRD(7 0.2 AA ME5 RL EO- 0.1 ENTTHTION-T23 0.05 PPK t1 t2 NSINC 0.02 DUTYCYCLE,D=t1/t2 AU1 (t,D)TRLJ00..57 D0.=010 NOTE:RTBEOESLAPONOWYNL0SE.E1ACSDEULCREOVNENGDITS,HTAH(PLEP).RLIMCAALBLE SRIENPGELTEITPIVUELSPEUΔLSTEJLS=ΔθTJJLL(=t)PθPJLK(t,D)PPK J0.3 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 t,TIME(SECONDS) Figure2.TypicalThermalResponseL,LeadLength=3/8Inch 1K 3 WATTS)500 RNWEOACNVTERAFENOPGREUTMLITAIVRE c)@VRR.TABLE 0.512 TA=125C POWER(230000 TTOJ=IN2I5TICALPPRUIOLRSE AGE(AdLEC.CHA 0.000..512 AKSURGE15000 ERSELEAKCIFIEDINE 0.000..000512 E VE P,PPK2300 I,RERASSP0.000..000000512 TA=125C 0.0003 10 1 2 5 10 20 50 100 200 400 1000 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 PW,PULSEWIDTH(ms) NOMINALVZ(VOLTS) Figure3.MaximumSurgePower Figure4.TypicalReverseLeakage www.onsemi.com 4

1N5913B Series APPLICATIONNOTE Since the actual voltage available from a given zener ΔT istheincreaseinjunctiontemperatureabovethelead JL diodeistemperaturedependent,itisnecessarytodetermine temperatureandmaybefoundfromFigure2foratrainof junctiontemperatureunderanysetofoperatingconditions powerpulses(L=3/8inch)orfromFigure10fordcpower. in order to calculate its value. The following procedure is ΔT =θ P JL JL D recommended: Forworst-casedesign,usingexpectedlimitsofI ,limits Z LeadTemperature,T ,shouldbedeterminedfrom: L of P and the extremes of T (ΔT ) may be estimated. D J J TL=θLAPD+TA Changesinvoltage,VZ,canthenbefoundfrom: θLA is the lead-to-ambient thermal resistance (C/W) and ΔV=θ ΔT VZ J P isthepowerdissipation.Thevalueforθ willvaryand D LA θ , the zener voltage temperature coefficient, is found dependsonthedevicemountingmethod.θ isgenerally VZ LA fromFigures5and6. 30-40C/Wforthevariousclipsandtiepointsincommon Underhighpower-pulseoperation,thezenervoltagewill useandforprintedcircuitboardwiring. varywithtimeandmayalsobeaffectedsignificantlybythe Thetemperatureoftheleadcanalsobemeasuredusinga zener resistance. For best regulation, keep current thermocoupleplacedontheleadascloseaspossibletothe excursionsaslowaspossible. tie point. The thermal mass connected to the tie point is Data of Figure 2 should not be used to compute surge normally large enough so that it will not significantly capability.SurgelimitationsaregiveninFigure3.Theyare respondtoheatsurgesgeneratedinthediodeasaresultof lowerthanwouldbeexpectedbyconsideringonlyjunction pulsedoperationoncesteady-stateconditionsareachieved. temperature,ascurrentcrowdingeffectscausetemperatures Usingthe measuredvalue of T , the junction temperature L to be extremely high in small spots resulting in device maybedeterminedby: degradationshouldthelimitsofFigure3beexceeded. T =T +ΔT J L JL www.onsemi.com 5

1N5913B Series TEMPERATURECOEFFICIENTRANGES (90%oftheUnitsareintheRangesIndicated) T IZ10 ZT1000 @ I @ C) 8 C) 500 mV/ V/ ( m T 6 ( N T E N 200 FFICI 4 FICIE E F 100 O E EC 2 RANGE CO UR RE 50 AT 0 TU R A E R P E M -2 P 20 E M T E ,VZ-4 ,TZ 10  3 4 5 6 7 8 9 10 11 12 V 10 20 50 100 200 400 1000 VZ,ZENERVOLTAGE@IZT(VOLTS) VZ,ZENERVOLTAGE@IZT(VOLTS) Figure5.UnitsTo12Volts Figure6.Units10To400Volts ZENERVOLTAGEversusZENERCURRENT (Figures7,8and9) 100 100 50 50 30 30 A) 20 A) 20 m m NT( 10 NT( 10 E E RR 5 RR 5 CU 3 CU 3 R 2 R 2 E E EN 1 EN 1 Z Z I,Z0.5 I,Z0.5 0.3 0.3 0.2 0.2 0.1 0.1 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100 VZ,ZENERVOLTAGE(VOLTS) VZ,ZENERVOLTAGE(VOLTS) Figure7.V =3.3thru10Volts Figure8.V =12thru82Volts Z Z W) 10 C/80 ( E C70 5 N A A) ST60 m SI ( E CURRENT 12 HERMALR4500 L L R T ZENE 0.5 LEAD30 TL I,Z TO-20 PRIMARYPATHOF 0.2 ON-10 CONDUCTIONISTHROUGH TI THECATHODELEAD C 0.1 UN 0 100 150 200 250 300 350 400 J 0 1/8 1/4 3/8 1/2 5/8 3/4 7/8 1 ,L VZ,ZENERVOLTAGE(VOLTS) J L,LEADLENGTHTOHEATSINK(INCH) Figure9.V =100thru400Volts Figure10.TypicalThermalResistance Z www.onsemi.com 6

MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U DATE 15 FEB 2005 B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K D 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY STYLE 1 STYLE 2 4. POLARITY DENOTED BY CATHODE BAND. F 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. A INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.161 0.205 4.10 5.20 OPPOTLIOANRAITLY A INS DNICEEADTOERD F B 0.079 0.106 2.00 2.70 SCALE 1:1 (SEE STYLES) D 0.028 0.034 0.71 0.86 F −−− 0.050 −−− 1.27 K K 1.000 −−− 25.40 −−− GENERIC MARKING DIAGRAM* A A STYLE 1: STYLE 2: xxx xxx PIN 1.CATHODE (POLARITY BAND) NO POLARITY 2.ANODE xxx xxx YYWW YYWW STYLE 1 STYLE 2 xxx = Specific Device Code A = Assembly Location YY = Year WW = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ (cid:2)”, may or may not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42045B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: AXIAL LEAD PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com

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