1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection (cid:129) Very small conduction losses (cid:129) Extremely fast switching (cid:129) Low forward voltage drop (cid:129) High frequency operation DO-204AL (DO-41) (cid:129) Solder dip 260 °C, 40 seconds (cid:129) Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, PRIMARY CHARACTERISTICS free-wheeling, dc-to-dc converters, and polarity IF(AV) 1.0 A protection applications. V 20 V, 30 V, 40 V RRM I 25 A FSM MECHANICAL DATA V 0.45 V, 0.55 V, 0.60 V F Case: DO-204AL (DO-41) T max. 125 °C J Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25°C unless otherwise noted) A PARAMETER SYMBOL 1N5817 1N5818 1N5819 UNIT Maximum repetitive peak reverse voltage V 20 30 40 V RRM Maximum RMS voltage V 14 21 28 V RMS Maximum DC blocking voltage V 20 30 40 V DC Maximum non-repetitive peak reverse voltage V 24 36 48 V RSM Maximum average forward rectified current IF(AV) 1.0 A 0.375" (9.5 mm) lead length at T = 90 °C L Peak forward surge current, 8.3 ms single half sine-wave I 25 A superimposed on rated load FSM Voltage rate of change (rated V ) dv/dt 10000 V/µs R Storage temperature range T , T - 65 to + 125 °C J STG Document Number: 88525 www.vishay.com Revision: 20-Aug-07 1

1N5817, 1N5818, 1N5819 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL 1N5817 1N5818 1N5819 UNIT Maximum instantaneous forward voltage (1) at 1.0 V 0.450 0.550 0.600 V F Maximum instantaneous forward voltage (1) at 3.1 V 0.750 0.875 0.900 V F Maximum average reverse current at rated T = 25 °C 1.0 A I mA DC blocking voltage (1) T = 100 °C R 10 A Typical junction capacitance at 4.0 V, 1.0 MHz C 125 110 pF J Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted) A PARAMETER SYMBOL 1N5817 1N5818 1N5819 UNIT R 50 Typical thermal resistance (1) θJA °C/W R 15 θJL Note: (1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5 x 1.5" (38 x 38 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5819-E3/54 0.332 54 5500 13" diameter paper tape and reel 1N5819-E3/73 0.332 73 3000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 1.0 30 A)(t enurCr 0.75 R0.e3s7i5st"i v(e9 .o5r m Inmd)u cLteivaed LLoeandgth e Current (A) 2205 rdaw 0.5 Surg 15 orF ard e w 10 graeAv 0.25 eak For 5 P 0 0 0 20 40 60 80 100 120 140 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure1. Forward Current Derating Curve Figure2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com Document Number: 88525 2 Revision: 20-Aug-07

1N5817, 1N5818, 1N5819 Vishay General Semiconductor 50 400 ward Current (A) 11.00 TJ = 125 °C P1 u%ls eD uWtyid Cthy c=l e300 µs citance (pF) 100 TfV =Js i g=1 =.20 55 M 0° CHmzVp-p For TJ = 25 °C apa s C aneou 0.1 nction ant Ju st n 1N5818 & 1N5819 I 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure3. Typical Instantaneous Forward Characteristics Figure6. Typical Junction Capacitance 100 100 A) )W ent (m 10 /C°( e e Curr 1.0 TJ = 125 °C cnade 10 s p er m ous Rev 0.1 TJ = 75 °C I lamreh 1 e T an tn Instant 0.01 TJ = 25 °C eisnarT 0.001 0.1 0 20 40 60 80 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure4. Typical Reverse Characteristics Figure7. Typical Transient Thermal Impedance 1000 T = 25 °C J f = 1.0 MHz F) Vsig = 50 mVp-p p e ( c n a cit a 100 p a C n o cti n u J 1N5817 10 0.1 1 10 100 Reverse Voltage (V) Figure5. Typical Junction Capacitance Document Number: 88525 www.vishay.com Revision: 20-Aug-07 3

1N5817, 1N5818, 1N5819 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AL (DO-41) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. www.vishay.com Document Number: 88525 4 Revision: 20-Aug-07

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: 1N5819/1 1N5818/1 1N5817-E3/4 1N5817/4 1N5817-E3/54 1N5818-E3/54 1N5819-E3/54