1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Plastic Rectifier FEATURES • Superectifier structure for high reliability condition SUPERECTIFIER® • Cavity-free glass-passivated junction • Fast switching for high efficiency • Low leakage current • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance DO-204AC (DO-15) please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer I 1.0 A F(AV) and telecommunication. V 200 V, 400 V, 600 V, 800 V, 1000 V RRM IFSM 50 A MECHANICAL DATA trr 150 ns, 250 ns, 300 ns, 500 ns Case: DO-204AC, molded epoxy over glass body I 0.5 μA Molding compound meets UL 94 V-0 flammability rating R Base P/N-E3 - RoHS-compliant, commercial grade V 1.2 V F Terminals: Matte tin plated leads, solderable per T max. 175 °C J J-STD-002 and JESD 22-B102 Package DO-204AC (DO-15) E3 suffix meets JESD 201 class 1A whisker test Diode variation Single die Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT Maximum repetitive peak reverse voltage V 200 400 600 800 1000 V RRM Maximum RMS voltage V 140 280 420 560 700 V RMS Maximum DC blocking voltage V 200 400 600 800 1000 A DC Maximum average forward rectified current I 1.0 A 0.375" (9.5 mm) lead length at T = 55 °C F(AV) A Peak forward surge current 8.3 ms single half I 50 A sine-wave superimposed on rated load FSM Operating junction and T , T -65 to +175 °C storage temperature range J STG Revision: 07-Nov-16 1 Document Number: 88522 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT Maximum instantaneous 1.0 A V 1.2 V forward voltage F Maximum DC reverse T = 25 °C 0.5 A current at rated DC I μA R blocking voltage TA= 100 °C 25 Maximum reverse IF = 0.5 A, IR = 1.0 A, t 150 250 300 500 ns recovery time I = 0.25 A rr rr Typical junction 4.0 V, 1 MHz C 25 pF capacitance J THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted) A PARAMETER SYMBOL 1N5615GP 1N5617GP 1N5619GP 1N5621GP 1N5623GP UNIT Typical thermal resistance R (1) 45 °C/W JA Note (1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 1N5619GP-E3/54 0.425 54 4000 13" diameter paper tape and reel 1N5619GP-E3/73 0.425 73 2000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 °C unless otherwise noted) A 1.00 60 A) ed Current ( 0.75 Current (A) 4500 8.3 ms SinTgA le= H55a lf° CSine-Wave Rectifi 0.50 Surge 30 d d ar ar w w 20 or or e F 0.25 k F ag Resistive or Inductive Load ea 10 er 0.375" (9.5 mm) Lead Length P v A 0 0 25 50 75 100 125 150 175 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current Revision: 07-Nov-16 2 Document Number: 88522 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1N5615GP, 1N5617GP, 1N5619GP, 1N5621GP, 1N5623GP www.vishay.com Vishay General Semiconductor 10 100 T = 25 °C A) f =J 1.0 MHz Current ( 1 ce (pF) Vsig = 50 mVp-p ward citan or pa 10 us F PulseT WJ i=d t2h5 = ° C300 μs n Ca neo 0.1 1 % Duty Cycle ctio a n ant Ju st n I 0.01 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 100 A) W) μ e Current ( 10 TJ = 125 °C dance (°C/ 10 s e ver 1 T = 75 °C mp s Re J mal I ou er 1 e h nstantan 0.1 TJ = 25 °C Typical T I 0.01 0.1 0 20 40 60 80 100 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-204AC (DO-15) 0.034 (0.86) 0.028 (0.71) DIA. 1.0 (25.4) MIN. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. Revision: 07-Nov-16 3 Document Number: 88522 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: V ishay: 1N5619-E3/54 1N5615-E3/54 1N5623/4 1N5621/4 1N5621-E3/54 1N5617-E3/54 1N5619/4 1N5615/4 1N5623- E3/54 1N5617/1 1N5621/1 1N5617GP-E3/1 1N5619GP-E3/1 1N5621GP-E3/1 1N5623GP-E3/1 1N5615GP/4 1N5615GP/51 1N5615GP/54 1N5615GP-E3/4 1N5615GP-E3/51 1N5615GP-E3/54 1N5615GPHE3/54 1N5617GP/54 1N5617GP-E3/51 1N5617GP-E3/54 1N5617GPHE3/54 1N5619GP/4 1N5619GP/54 1N5619GP-E3/4 1N5619GP-E3/51 1N5619GP-E3/54 1N5619GPHE3/54 1N5621GP/54 1N5621GP-E3/51 1N5621GP-E3/54 1N5621GPHE3/54 1N5623GP/4 1N5623GP/54 1N5623GP-E3/4 1N5623GP-E3/51 1N5623GP-E3/54 1N5623GPHE3/54 1N5617GP-E3/73 1N5621GP-E3/73 1N5619GP-E3/73 1N5615GP-E3/73