AO4822A 30V Dual N-channel MOSFET General Description Product Summary The AO4822A uses advanced trench technology to VDS 30V provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8A device is suitable for use as a load switch or in PWM R (at V =10V) <19mW DS(ON) GS applications. R (at V = 4.5V) < 26mW DS(ON) GS ESD Protected 100% UIS Tested 100% R Tested g DD DD SSOOIICC--88 TToopp VViieeww BBoottttoomm VViieeww TToopp VViieeww SS22 11 88 DD22 GG22 22 77 DD22 SS11 33 66 DD11 GG GG GG11 44 55 DD11 SS SS PPiinn11 Absolute Maximum Ratings T =25°C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV ±±2200 VV GGSS Continuous Drain TA=25°C I 8 Current T =70°C D 6.5 A A Pulsed Drain Current C I 48 DM Avalanche Current C I , I 19 A AS AR Avalanche energy L=0.1mH C E , E 18 mJ AS AR T =25°C 2 A P W Power Dissipation B T =70°C D 1.3 A Junction and Storage Temperature Range T, T -55 to 150 °C J STG Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W Maximum Junction-to-Ambient A D Steady-State RqJA 74 90 °C/W Maximum Junction-to-Lead Steady-State RqJL 32 40 °C/W Rev 4 : November 2010 www.aosmd.com Page 1 of 6

AO4822A Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250m A, V =0V 30 V DSS D GS V =30V, V =0V 1 I Zero Gate Voltage Drain Current DS GS m A DSS T=55°C 5 J I Gate-Body leakage current V =0V, V = ±20V 10 m A GSS DS GS V Gate Threshold Voltage V =V I =250m A 1.2 1.8 2.4 V GS(th) DS GS D I On state drain current V =10V, V =5V 48 A D(ON) GS DS V =10V, I =8A 15.5 19 GS D mW R Static Drain-Source On-Resistance T=125°C 21 25 DS(ON) J V =4.5V, I =6A 18.5 26 mW GS D g Forward Transconductance V =5V, I =8A 30 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 600 740 888 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 77 110 145 pF oss GS DS C Reverse Transfer Capacitance 50 82 115 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.1 1.7 W g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 12 15 18 nC g Q (4.5V) Total Gate Charge 6 7.5 9 nC g V =10V, V =15V, I =8A GS DS D Q Gate Source Charge 2 2.5 3 nC gs Q Gate Drain Charge 2 3 5 nC gd t Turn-On DelayTime 5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==11..88WW ,, 33..55 nnss r GS DS L t Turn-Off DelayTime R =3W 19 ns D(off) GEN t Turn-Off Fall Time 3.5 ns f trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/m s 6 8 10 ns Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/m s 14 18 22 nC A. The value of RqJAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P is based on T =150°C, using ≤10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150°C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT=25°C. J D. The RqJAis the sum of the thermal impedence from junction to lead RqJLand lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300m s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150°C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: November 2010 www.aosmd.com Page 2 of 6

AO4822A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3300 3300 1100VV 44VV VV ==55VV DDSS 2255 2255 33..55VV 2200 2200 A)A) 1155 A)A) 1155 I(I(DD I(I(DD 33VV 1100 1100 112255°°CC 55 55 2255°°CC VV ==22..55VV GGSS 00 00 00 11 22 33 44 55 11 11..55 22 22..55 33 33..55 44 FFiigg 11:: OOnn--RReeggiiooVVnnD D CCSShh((VVaaororaallttccsstt))eerriissttiiccss ((NNoottee EE)) FFiigguurree 22:: TTrraannssffeeVVrrGG CCSS((hhVVaaoorrllaattsscc))tteerriissttiiccss ((NNoottee EE)) 3300 11..66 ee cc 2255 stanstan 11..44 VIVIDDGG==SS88==AA1100VV )) sisi ee WWWWWWWW(m(mN)N) 2200 VVGGSS==44..55VV On-ROn-R 11..22 175 RRDS(ODS(O zed zed 2 1155 malimali 11 VVGGSS==44..55VV 10 VVGGSS==1100VV NorNor IIDD==66AA 1100 00..88 00 55 1100 1155 2200 00 2255 5500 7755 110000 112255 115500 117755 II ((AA)) DD 0 FFiigguurree 33:: OOnn--RReessiissttaannccee vvss.. DDrraaiinn CCuurrrreenntt aanndd GGaattee TTeemmppeerraattuurree ((°°CC)) VVoollttaaggee ((NNoottee EE)) FFiigguurree 44:: OOnn--RReessiissttaannccee vvss.. JJuunnccttiioo1nn8 TTeemmppeerraattuurree ((NNoottee EE)) 40 1.0E+02 I =8A D 35 1.0E+01 40 30 1.0E+00 ) WWWWm 125°C 1.0E-01 125°C R(DS(ON) 2205 I(A)S 1.0E-02 1.0E-03 25°C 15 25°C 1.0E-04 10 2 4 6 8 10 1.0E-05 VGS(Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Figure 5: On-Resistance vs. Gate-Source Voltage V (Volts) (Note E) Figure 6: Body-DiodSDe Characteristics (Note E) Rev 4: November 2010 www.aosmd.com Page 3 of 6

AO4822A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1100 11220000 VV ==1155VV DDSS II ==88AA DD 11000000 88 CC iissss F)F) 880000 pp V(Volts)V(Volts)GSGS 4646 pacitance (pacitance ( 660000 aa 440000 CC CC oossss 22 220000 CC rrssss 00 00 00 55 1100 1155 00 55 1100 1155 2200 2255 3300 QQ ((nnCC)) VV ((VVoollttss)) gg DDSS FFiigguurree 77:: GGaattee--CChhaarrggee CChhaarraacctteerriissttiiccss FFiigguurree 88:: CCaappaacciittaannccee CChhaarraacctteerriissttiiccss 11000000..00 110000 ent ent TTAA==2255°°CC 110000..00 urrurr CC 1100mm ss nche nche TTAA==110000°°CC mps)mps) 1100..00 RlRliimmDDSSiitt((eeOOddNN)) 110000mm ss k Avalak Avala 1100 I(AI(ADD 11..00 1111mm00mmssss aa ee PP 00..11 (A) (A) AR AR TTAA==115500°°CC TTAA==112255°°CC TTTTJAJA((==MM22aaxx55))==°°11CC5500°°CC DDCC 1100ss II 00..00 11 00..0011 00..11 11 1100 110000 00..000000000011 00..0000000011 00..00000011 00..000011 VVDDSS((VVoollttss)) TTiimmee iinn aavvaallaanncchhee,, tt ((ss)) AA FFiigguurree 1100:: MMaaxxiimmuumm FFoorrwwaarrdd BBiiaasseedd FFiigguurree 99:: SSiinnggllee PPuullssee AAvvaallaanncchhee ccaappaabbiilliittyy ((NNoottee SSaaffee OOppeerraattiinngg AArreeaa ((NNoottee FF)) CC)) 10000 T =25°C A 1000 W) er (100 w o P 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 4: November 2010 www.aosmd.com Page 4 of 6

AO4822A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1100 DD==TT //TT oonn IInn ddeesscceennddiinngg oorrddeerr nt nt TTJJ,,PPKK==TTAA++PPDDMM..ZZqqJJAA..RRqqJJAA DD==00..55,, 00..33,, 00..11,, 00..0055,, 00..0022,, 00..0011,, ssiinnggllee ppuullssee nsiensiencence 11 RRqqJJAA==9900°°CC//WW TraTrastasta d d sisi eeee malizmalizmal Rmal R 00..11 NorNorherher PPDD JAJATT 00..0011 SSiinnggllee PPuullssee ZZqqqqqqqq TT oonn TT 00..000011 00..0000000011 00..00000011 00..000011 00..0011 00..11 11 1100 110000 11000000 PPuullssee WWiiddtthh ((ss)) FFiigguurree 1122:: NNoorrmmaalliizzeedd MMaaxxiimmuumm TTrraannssiieenntt TThheerrmmaall IImmppeeddaannccee ((NNoottee FF)) Rev 4: November 2010 www.aosmd.com Page 5 of 6

AO4822A GGaattee CChhaarrggee TTeesstt CCiirrccuuiitt && WWaavveeffoorrmm VVggss QQgg ++ 1100VV ++ VVDDCC QQggss QQggdd -- VVddss VVDDCC -- DDUUTT VVggss IIgg CChhaarrggee RReessiissttiivvee SSwwiittcchhiinngg TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss RRLL VVddss VVddss 9900%% ++ VVggss DDUUTT VVdddd VVDDCC RRgg -- 1100%% VVggss VVggss ttdd((oonn)) ttrr ttdd((ooffff)) ttff ttoonn ttooffff UUnnccllaammppeedd IInndduuccttiivvee SSwwiittcchhiinngg ((UUIISS)) TTeesstt CCiirrccuuiitt && WWaavveeffoorrmmss LL 22 VVddss EEAA RR == 11//22 LLIIAARR BBVVDDSSSS IIdd VVddss ++ VVggss Vgs VDC Vdd IAR Rg - Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q r r = - Idt DUT Vgs Vds - L Isd I trr Isd F dI/dt + I Vgs VDC Vdd RM Vdd - Vds Ig Rev 4: November 2010 www.aosmd.com Page 6 of 6