TrenchPTM IXTA28P065T V = - 65V DSS Power MOSFETs IXTP28P065T I = - 28A D25 R ≤≤≤≤≤ 45mΩΩΩΩΩ DS(on) P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S V T = 25°C to 150°C - 65 V D (Tab) DSS J V T = 25°C to 150°C, R = 1MΩ - 65 V DGR J GS TO-220AB (IXTP) V Continuous ±15 V GSS V Transient ±25 V GSM I T = 25°C - 28 A D25 C I T = 25°C, Pulse Width Limited by T - 90 A G DM C JM D D (Tab) S I T = 25°C - 28 A A C E T = 25°C 200 mJ G = Gate D = Drain S C S = Source Tab = Drain P T = 25°C 83 W D C T -55 ... +150 °C J T 150 °C JM T -55 ... +150 °C Features stg T 1.6mm (0.062 in.) from Case for 10s 300 °C TL Plastic Body for 10s 260 °C (cid:122)International Standard Packages SOLD (cid:122) Avalanche Rated M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d (cid:122)Extended FBSOA Weight TO-220 3.0 g (cid:122)Fast Intrinsic Diode TO-263 2.5 g (cid:122) Low R and Q DS(ON) G Advantages (cid:122) Easy to Mount (cid:122) Space Savings (cid:122) High Power Density Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = - 250μA - 65 V DSS GS D (cid:122) High-Side Switching V V = V , I = - 250μA - 2.5 - 4.5 V GS(th) DS GS D (cid:122) Push Pull Amplifiers I V = ± 15V, V = 0V ±50 nA (cid:122) DC Choppers GSS GS DS (cid:122) Automatic Test Equipment I V = V , V = 0V - 3 μA DSS DS DSS GS (cid:122) Current Regulators T = 125°C -100 μA J (cid:122) Battery Charger Applications R V = -10V, I = 0.5 • I , Note 1 45 mΩ DS(on) GS D D25 © 2013 IXYS CORPORATION, All Rights Reserved DS99968B(01/13)

IXTA28P065T IXTP28P065T Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. TO-263 Outline J g V = -10V, I = 0.5 • I , Note 1 10 16 S fs DS D D25 C 2030 pF iss C V = 0V, V = - 25V, f = 1MHz 270 pF oss GS DS C 127 pF rss t 21 ns d(on) Resistive Switching Times t 29 ns r V = -10V, V = 0.5 • V , I = 0.5 • I t GS DS DSS D D25 36 ns Pins: d(off) R = 10Ω (External) 1 - Gate t G 23 ns 2,4 - Drain f 3 - Source Q 46 nC g(on) Q V = -10V, V = 0.5 • V , I = 0.5 • I 20 nC gs GS DS DSS D D25 Q 10 nC gd R 1.5 °C/W thJC R TO-220 0.50 °C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25°C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 28 A S GS I Repetitive, Pulse Width Limited by T -112 A SM JM V I = - 28A, V = 0V, Note 1 -1.5 V TO-220 Outline SD F GS t 31 ns rr I = -14A, -di/dt = -100A/μs Q F 34 nC RM V = - 33V, V = 0V I R GS - 2.2 A RM Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. Pins: 1 - Gate 2 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents:4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B27,071,537

IXTA28P065T IXTP28P065T Fig. 1. Output Characteristics @ T = 25ºC Fig. 2. Extended Output Characteristics @ T = 25ºC J J -28 -110 V G S = -- 190VV -100 VGS = -10V -24 -90 - 9V -20 - 8V -80 es es -70 - 8V per -16 - 7V per -60 m m A A -50 - D -12 - D - 7V I I -40 - 6V -8 -30 - 6V -20 -4 - 5V -10 - 5V 0 0 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 VDS - Volts VDS - Volts Fig. 4. R Normalized to I = -14A Value vs. DS(on) D Fig. 3. Output Characteristics @ T = 125ºC J Junction Temperature -28 1.8 VGS = -10V -24 - 9V VGS = -10V - 8V 1.6 mperes --2106 - 7V ormalized 1.4 I D = - 28A I D = -14A I - AD -12 - 6V - Non) 1.2 S( RD 1.0 -8 -4 - 5V 0.8 0 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -50 -25 0 25 50 75 100 125 150 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = -14A Value vs. Fig. 6. Maximum Drain Current vs. Drain Current Case Temperature 1.7 -30 1.6 VGS = -10V -25 1.5 TJ = 125ºC d alize 1.4 es -20 m er Nor 1.3 mp -15 - DS(on) 1.2 I - AD -10 R 1.1 TJ = 25ºC -5 1.0 0.9 0 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -50 -25 0 25 50 75 100 125 150 ID - Amperes TC - Degrees Centigrade © 2013 IXYS CORPORATION, All Rights Reserved

IXTA28P065T IXTP28P065T Fig. 7. Input Admittance Fig. 8. Transconductance -35 24 TJ = - 40ºC -30 20 -25 25ºC 16 s s pere -20 men 125ºC m e 12 I - AD -15 T J = 1- 242550ºººCCC g - Sif s 8 -10 4 -5 0 0 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge -70 -10 -60 -9 VDS = - 33V -8 I D = -14A -50 -7 I G = -1mA I - AmperesS --4300 TJ = 125ºC V - VoltsGS ---654 -20 TJ = 25ºC -3 -2 -10 -1 0 0 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 -1.2 -1.3 -1.4 0 5 10 15 20 25 30 35 40 45 50 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 -100 f = 1 MHz RDS(on) Limit 25µs s d a ar 100µs F o s Pic Ciss ere e - 1,000 mp -10 c A citan I - D 1ms a p Ca Coss TJ = 150ºC Crss TSCin g=l e2 5PºuClse 11000mmss 100 -1 0 -5 -10 -15 -20 -25 -30 -35 -40 -1 -10 -100 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA28P065T IXTP28P065T Fig. 13. Resistive Turn-on Rise Time vs. Fig. 14. Resistive Turn-on Rise Time vs. Junction Temperature Drain Current 33 32 RG = 10Ω, VGS = -10V 31 VDS = - 33V 30 s29 TJ = 25ºC d s 28 n d o n sec27 eco RG = 10Ω, VGS = -10V ano I D = - 28A nos 26 VDS = - 33V N25 a t - r t - Nr 24 23 I D = -14A 22 21 TJ = 125ºC 19 20 25 35 45 55 65 75 85 95 105 115 125 -14 -16 -18 -20 -22 -24 -26 -28 TJ - Degrees Centigrade ID - Amperes Fig. 15. Resistive Turn-on Switching Times vs. Fig. 16. Resistive Turn-off Switching Times vs. Gate Resistance Junction Temperature 120 38 28 50 t r td(on) - - - - 27 t f td(off) - - - - 46 100 TJ = 125ºC, VGS = -10V 34 RG = 10Ω, VGS = -10V t - Nanosecondsr 468000 VDS = - 33V I D = - 28A, -14A 223260 d(on)t - Nanoseconds t - Nanosecondsf 2222223456 VDIS D = = - - 3 238VA , - 1 4A 2333460482 d(off)t - Nanoseconds 20 18 21 22 0 14 20 18 10 12 14 16 18 20 22 24 26 28 30 32 34 25 35 45 55 65 75 85 95 105 115 125 RG - Ohms TJ - Degrees Centigrade Fig. 17. Resistive Turn-off Switching Times vs. Fig. 18. Resistive Turn-off Switching Times vs. Drain Current Gate Resistance 30 44 70 70 65 65 t f td(off) - - - - t f td(off) - - - - 28 RG = 10Ω, VGS = -10V 40 60 TJ = 125ºC, VGS = -10V 60 Nanoseconds 2246 VDS = - 33V TJ = 25ºC 3326 d(off)t - Nanose Nanoseconds44550505 VDS = - 3I D3 V= - 1 4 A 44550505 d(off)t - Nanose t - f 22 TJ = 125ºC 28 cond t - f 35 I D = - 28A 35 cond s 30 30 s 25 25 20 24 20 20 18 20 15 15 -14 -16 -18 -20 -22 -24 -26 -28 10 12 14 16 18 20 22 24 26 28 30 32 34 ID - Amperes RG - Ohms © 2013 IXYS CORPORATION, All Rights Reserved

IXTA28P065T IXTP28P065T Fig. 19. Maximum Transient Thermal Impedance 10 1 W C / - ºC J h) Z(t 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_28P065T(A1)11-05-10-A

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