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  • 型号: HMC595E
  • 制造商: Hittite
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

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产品参数

参数 数值
产品目录 射频/IF 和 RFID
描述 IC MMIC GAAS SW SPDT SOT26
产品分类 RF 开关
IIP3 65dBm (标准)
品牌 Hittite Microwave Corporation
数据手册 点击此处下载产品Datasheet
产品图片
P1dB 39dBm (标准) IP1dB
产品型号 HMC595E
RF类型 通用
rohs 无铅 / 符合限制有害物质指令(RoHS)规范要求
产品系列 -
供应商器件封装 SOT-26
其它名称 1127-1060-2
HMC595ETR
包装 带卷 (TR)
封装/外壳 SOT-23-6
工作温度 -40°C ~ 85°C
拓扑 反射
插损@频率 0.5dB @ 3GHz
标准包装 500
特性 -
特色产品 http://www.digikey.cn/product-highlights/zh/new-hmc-series-spdt-switches/53047
电压-电源 -
电路 SPDT
阻抗 50 欧姆
隔离@频率 18dB @ 3GHz (标准)
频率 -上 3GHz
频率 -下 DC

Datasheet

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HMC595 595E / v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Typical Applications Features The HMC595 / HMC595E is ideal for: Low Insertion Loss: 0.3 dB • Cellular/3G Infrastructure High Input IP3: +65 dBm • Private Mobile Radio Handsets Isolation: 30 dB E • WLAN, WiMAX & WiBro Positive Control: 0/+3V to 0/+10V • Automotive Telematics Ultra Small Package: SOT26 T • Test Equipment Included in the HMC-DK005 Designer’s Kit Functional Diagram General Description E The HMC595 & HMC595E are low-cost SPDT swit- 10 ches in 6-lead SOT26 packages for use in transmit/ receive applications which require very low distortion L at high incident power levels. The device can control T signals from DC to 3 GHz and is especially suited M for Cellular/3G infrastructure, WiMAX and WiBro O S applications with only 0.3 dB typical insertion loss. The design provides a 3 watt power handling and - S +65 dBm third order intercept at +8 Volt bias. RF1 E and RF2 are refl ective shorts when “Off”. Control H S inputs A & B are compatible with CMOS and some C TTL logic families. These products are form, fi t and T function replacements for HMC195 & HMC195E while I W B offering superior electrical performance. S Electrical Specifi cations, T = +25° C, Vctl = 0/+5 Vdc (Unless Otherwise Stated), 50 Ohm System A O Parameter Frequency Min. Typ. Max. Units DC - 1.0 GHz 0.25 0.5 dB DC - 2.0 GHz 0.3 0.6 dB Insertion Loss DC - 2.5 GHz 0.4 0.7 dB DC - 3.0 GHz 0.5 0.8 dB DC - 1.0 GHz 26 30 dB DC - 2.0 GHz 22 26 dB Isolation DC - 2.5 GHz 18 24 dB DC - 3.0 GHz 14 18 dB DC - 1.0 GHz 30 dB DC - 2.0 GHz 25 dB Return Loss DC - 2.5 GHz 22 dB DC - 3.0 GHz 20 dB Vctl = 0/+3V 32 35 dBm Input Power for 1dB Compression Vctl = 0/+5V 0.5 - 3.0 GHz 35 38 dBm Vctl = 0/+8V 37 39 dBm Vctl = 0/+3V 47 dBm Input Third Order Intercept Vctl = 0/+5V 0.5 - 3.0 GHz 64 dBm (Two-tone Input Power = +27 dBm Each Tone) Vctl = 0/+8V 65 dBm Switching Characteristics DC - 3.0 GHz tRISE, tFALL (10/90% RF) 80 ns tON, tOFF (50% CTL to 10/90% RF) 120 ns For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 10 - 356 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Insertion Loss Isolation Between RFC and RF1/RF2 0 0 TION LOSS (dB)-0-.51 LATION (dB) --2100 ++-428055CCC E R O E S T INS-1.5 ++2855CC I -30 -40C -2 -40 E 0 1 2 3 4 0 1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) 10 L RF1 to RF2 Isolations Return Loss T 0 0 M O S OLATION (dB) --2100 RRFF12 OONN S URN LOSS (dB) --2100 ++-428055CCC HES - IS -30 RET -30 TC I B W -40 -40 S 0 1 2 3 4 0 1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) O Input P0.1dB vs. Vctl Input P1dB vs. Vctl 42 42 40 40 INPUT P0.1dB (dBm) 3333302468 +8V INPUT P1dB (dBm) 3333302468 +++853VVV +5V 28 +3V 28 26 26 0 1 2 3 4 0 1 2 3 4 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 10 - 357 Order On-line at www.hittite.com

HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Input IP3 vs. Input Power @ 900 MHz Input IP3 vs. Input Power @ 1900 MHz 70 70 65 65 E m) m) B B d 60 d 60 3 ( 3 ( P P NPUT I 55 + ++1085VVV NPUT I 55 T+ ++1085VVV I I 50 50 45 45 E 27 28 29 30 31 32 33 27 28 29 30 31 32 33 10 TWO TONE INPUT POWER (dBm) (EACH TONE) TWO TONE INPUT POWER (dBm) (EACH TONE) 2ndL & 3rd Harmonics @ 900 MHz Input Third Order Intercept Point Vctl = +3 Volts T M 70 0 0 O S 65 F2 -0.2 F3 -20 TCHES - INPUT IP3 (dBm) 45565050 + +++10853VVVVS INSERTION LOSS (dB)---000...864 ---864000HARMONICS (dBc) I 40 W B 35 -1 -100 S 0 1 2 3 4 24 26 28 30 32 34 36 FREQUENCY (GHz) INPUT POWER (dBm) O 2nd & 3rd Harmonics @ 900 MHz 2nd & 3rd Harmonics @ 900 MHz Vctl = +5 Volts Vctl = +8 Volts 0 0 0 0 F2 F2 -0.2 F3 -20 -0.2 F3 -20 B) B) S (d HA S (d HA S-0.4 -40R S-0.4 -40R O M O M L O L O N N N N TIO-0.6 -60ICS TIO-0.6 -60ICS INSER-0.8 -80 (dBc) INSER-0.8 -80 (dBc) -1 -100 -1 -100 26 28 30 32 34 36 38 28 30 32 34 36 38 40 INPUT POWER (dBm) INPUT POWER (dBm) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 10 - 358 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Input P0.1dB vs. Vctl Input P1dB vs. Vctl 40 40 INPUT P0.1dB (dBm) 233505 ++85VV INPUT P1dB (dBm) 233505 T E++85VV +3V +3V 20 20 E 0.01 0.1 1 0.01 0.1 1 FREQUENCY (GHz) FREQUENCY (GHz) 10 L Absolute Maximum Ratings Control Voltages T Max. Input Power State Bias Condition M 0.5 - 2.5 GHz 39 dBm V = 0/+8V O ctl Low 0 to +0.2 Vdc @ 10 µA Typical S Control Voltage Range (A & B) -0.2 to +12 Vdc +3 Vdc @ 2µA Typical to High - Hot Switching Power Level +8 Vdc @ 40 µA Typical (± 0.2 Vdc) 39 dBm S V = 0/+8V ctl E Channel Temperature 150 °C S H Continuous Pdiss ( T= + 85 °C) (derate 6 mW/°C above 85 °C) 0.38W C Truth Table T Thermal Resistance 173 °C/W I Storage Temperature B-65 to +150 °C Control Input (Vctl) Signal Path State W Operating Temperature -40 to +85 °C A B RFC to RF1 RFC to RF2 S ESD Sensitivity Class 1A High Low Off On DC Blocks are required at ports RFC, RF1 and RF2 Low High On Off O ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 10 - 359 Order On-line at www.hittite.com

HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Outline Drawing E T E 10 L T M O S - S E H S NOTES: C 1. LEADFRAME MATERIAL: COPPER ALLOY T 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] I 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. W B 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. S 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND O Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] HMC595 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] H595 XXXX HMC595E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] 595E XXXX [1] Max peak refl ow temperature of 235 °C [2] Max peak refl ow temperature of 260 °C [3] 4-Digit lot number XXXX For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 10 - 360 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Pin Descriptions Pin Number Function Description Interface Schematic This pin is DC coupled and matched to 50 Ohm. 1, 3, 5 RF2, RF1, RFC Blocking capacitors are required. E 2 GND This pin must be connected to RF/DC ground. T 4 B See truth table and control voltage table. 6 A See truth table and control voltage table. E 10 L T Typical Application Circuit M O S - S E S H C T I B W S O Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of +3 to +8 Volts applied to the CMOS logic gates. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 10 - 361 Order On-line at www.hittite.com

HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Evaluation Circuit Board E T E 10 L T M O S - S E H S C T I W B S O List of Materials for Evaluation PCB 101675 [1] The circuit board used in the fi nal application should Item Description be generated with proper RF circuit design tech- J1 - J3 PCB Mount SMA RF Connector niques. Signal lines at the RF port should have 50 J4 - J6 DC Pin ohm impedance and the package ground leads and C1 - C3 330 pF capacitor, 0402 Pkg. package bottom should be connected directly to the U1 HMC595 / HMC595E T/R Switch ground plane similar to that shown above. The eval- PCB [2] 101659 Evaluation PCB uation circuit board shown above is available from [1] Reference this number when ordering complete evaluation PCB Hittite Microwave Corporation upon request. [2] Circuit Board Material: Rogers 4350 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 10 - 362 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

HMC595 / 595E v00.0805 GaAs MMIC 3 WATT T/R SWITCH, DC - 3 GHz Notes: E T E 10 L T M O S - S E S H C T I B W S O For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 10 - 363 Order On-line at www.hittite.com