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  • 型号: Q8010L5
  • 制造商: Littelfuse
  • 库位|库存: xxxx|xxxx
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Q8010L5产品简介:

ICGOO电子元器件商城为您提供Q8010L5由Littelfuse设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 Q8010L5价格参考。LittelfuseQ8010L5封装/规格:晶闸管 - TRIAC, TRIAC 标准 800V 10A 通孔 TO-220 隔离的标片。您可以下载Q8010L5参考资料、Datasheet数据手册功能说明书,资料中有Q8010L5 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRIAC 800V 10A TO220双向可控硅 800V 10A 50-50-50mA

产品分类

双向可控硅分离式半导体

GateTriggerCurrent-Igt

50 mA, 75 mA

GateTriggerVoltage-Vgt

2.5 V

品牌

Littelfuse Inc

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

晶体闸流管,双向可控硅,Littelfuse Q8010L5-

数据手册

点击此处下载产品Datasheet

产品型号

Q8010L5

三端双向可控硅类型

标准

不重复通态电流

100 A, 120 A

产品种类

双向可控硅

供应商器件封装

TO-220 隔离的标片

保持电流Ih最大值

50 mA

关闭状态漏泄电流(在VDRMIDRM下)

100 uA

其它名称

F5300
Q8010L5-ND

包装

散装

商标

Littelfuse

安装类型

通孔

安装风格

Through Hole

封装

Bulk

封装/外壳

TO-220-3 隔离片

封装/箱体

TO-220-3

工厂包装数量

500

开启状态RMS电流-ItRMS

10 A

开启状态电压

1.6 V

最大工作温度

+ 125 C

最小工作温度

- 40 C

栅极触发电压-Vgt

2.5 V

栅极触发电流-Igt

50 mA, 75 mA

标准包装

500

电压-断态

800V

电压-栅极触发(Vgt)(最大值)

1.3V

电流-不重复浪涌50、60Hz(Itsm)

100A,120A

电流-保持(Ih)(最大值)

50mA

电流-栅极触发(Igt)(最大值)

50mA

电流-通态(It(RMS))(最大值)

10A

系列

Qxx10xx

配置

单一

额定重复关闭状态电压VDRM

800 V

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PDF Datasheet 数据手册内容提取

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs Qxx10xx & Qxx10xHx Series RoHS Description 10 Amp bi-directional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Standard type devices normally operate in Quadrants I & III triggered from AC line. Features & Benefits • RoHS Compliant • No contacts to wear out from reaction of • Glass – passivated switching events junctions • Restricted (or limited) RFI Agency Approval • Voltage capability up to generation, depending on 1000 V activation point sine wave Agency Agency File Number • Surge capability up to • UL Recognized to UL E71639* 120 A 1557 as an Electrically * - L Package Only • 2500Vrms min. isolation Isolated Semiconductor between mounting tab Device Main Features and active terminals • Solid-state switching Symbol Value Unit eliminates arcing or contact bounce that I 10 A T(RMS) create voltage transients V /V 400 to 1000 V DRM RRM I 25 to 50 mA GT (Q1) Schematic Symbol Applications Alternistor type devices are used in applications requiring high commutation performance such as controlling MT2 MT1 inductive loads. Isolated packages are offered with internal construction, having the case or mounting tab electrically isolated from the semiconductor chip. G Additional Information Datasheet Resources Samples ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs Absolute Maximum Ratings — Standard Triac Symbol Parameter Value Unit Qxx10Ry/ T = 95°C I RMS on-state current (full sine wave) Qxx10Ny C 10 A T(RMS) Qxx10Ly T = 90°C C Non repetitive surge peak on-state current f = 50 Hz t = 20 ms 100 I A TSM (full cycle, T initial = 25°C) f = 60 Hz t = 16.7 ms 120 J I2t I2t Value for fusing t = 8.3 ms 60 A2s p Critical rate of rise of on-state current di/dt f = 120 Hz T = 125°C 70 A/μs I = 200mA with ≤ 0.1μs rise time J G t ≤ 10 μs I Peak gate trigger current p T = 125°C 1.8 A GTM I ≤ I J GT GTM P Average gate power dissipation T = 125°C 0.5 W G(AV) J T Storage temperature range -40 to 150 °C stg T Operating junction temperature range -40 to 125 °C J Absolute Maximum Ratings — Alternistor Triac (3 Quadrants) Symbol Parameter Value Unit Qxx10LHy T = 90°C C I RMS on-state current (full sine wave) Qxx10RHy/ 10 A T(RMS) T = 95°C Qxx10NHy C Non repetitive surge peak on-state current f = 50 Hz t = 20 ms 110 I A TSM (full cycle, T initial = 25°C) f = 60 Hz t = 16.7 ms 120 J I2t I2t Value for fusing t = 8.3 ms 60 A2s p di/dt Critical rate of rise of on-state current f = 120 Hz T = 125°C 70 A/μs J t ≤ 10 μs I Peak gate trigger current p T = 125°C 2.0 A GTM I ≤ I J GT GTM P Average gate power dissipation T = 125°C 0.5 W G(AV) J T Storage temperature range -40 to 150 °C stg T Operating junction temperature range -40 to 125 °C J Electrical Characteristics (T = 25°C, unless otherwise specified) — Standard Triac J Symbol Test Conditions Quadrant Qxx10x4 Qxx10x5 Unit I – II – III 25 50 I V = 12V R = 60 Ω MAX. mA GT D L IV 50 75 (TYP) V V = 12V R = 60 Ω I – II – III MAX. 1.3 V GT D L V V = V R = 3.3 kΩ T = 125°C ALL MIN. 0.2 V GD D DRM L J I I = 200mA MAX. 35 50 mA H T 400V 150 225 V = V Gate Open T = 125°C 600V 100 200 dv/dt D DRM J MIN. V/μs 800V 75 175 V = V Gate Open T = 100°C 1000V 50 150 D DRM J (dv/dt)c (di/dt)c = 5.4 A/ms T = 125°C TYP. 2 4 V/μs J t I = 2 x IGT PW = 15µs I = 14.1 A(pk) TYP. 3.0 3.0 μs gt G T Note: xx = voltage, x = package, y = sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs Electrical Characteristics (T = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants) J Symbol Test Conditions Quadrant Value Unit I V = 12V R = 60 Ω I – II – III MAX. 50 mA GT D L V V = 12V R = 60 Ω I – II – III MAX. 1.3 V GT D L V V = V R = 3.3 kΩ T = 125°C I – II – III MIN. 0.2 V GD D DRM L J I I = 100mA MAX. 50 mA H T 400V 750 V = V Gate Open T = 125°C 600V 650 dv/dt D DRM J MIN. V/μs 800V 500 V = V Gate Open T = 100°C 1000V 300 D DRM J (dv/dt)c (di/dt)c = 5.4 A/ms T = 125°C TYP. 30 V/μs J t I = 2 x IGT PW = 15µs I = 14.1 A(pk) TYP. 4.0 μs gt G T Static Characteristics Symbol Test Conditions Value Unit V I = 14.1A t = 380 µs MAX. 1.60 V TM TM p T = 25°C 400 - 600V 10 μA J I DRM V = V T = 125°C 400 - 800V MAX. 2 IRRM DRM RRM J mA T = 100°C 1000V 3 J Thermal Resistances Symbol Parameter Value Unit Qxx10Ryy/ 1.3 Qxx10Nyy R Junction to case (AC) °C/W Ɵ(J-C) Qxx10Lyy 2.6 Qxx10Ryy 45 R Junction to ambient (AC) °C/W Ɵ(J-A) Qxx10Lyy 50 Note: xx = voltage, x = package, y = sensitivity, yy = type & sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs Figure 2: Normalized DC Gate Trigger Current for Figure 1: Definition of Quadrants All Quadrants vs. Junction Temperature ALL POLARITIES ARE REFERENCED TO MT1 4.0 MT2 POSITIVE (Positive Half Cycle) MT2 + MT2 (-)GIGATTE (+)IGGATTE = 25ºC) 3.0 IGT - REFMT1 QQIIIII QQIIV REFMT1+ IGT of I/ I (TGTGTJ 2.0 MT2 MT2 o ati 1.0 R (-)IGT (+)IGT GATE GATE 0.0 MT1 MT1 -65 -40 -15 10 35 60 85 110 +125 - Junction Temperature (T) - ºC REF MT2 NEGATIVE REF J (Negative Half Cycle) Note: Alternistors will not operate in QIV Figure 3: Normalized DC Holding Current Figure 4: Normalized DC Gate Trigger Voltage for vs. Junction Temperature All Quadrants vs. Junction Temperature 4.0 2.0 5ºC) 3.0 25ºC) 1.5 of I/ I (T= 2HHJ 2.0 V/ V (T= GT GTJ 1.0 Ratio 1.0 atio of 0.5 R 0.0 0.0 -65 -40 -15 10 35 60 85 110 +125 -65 -40 -15 10 35 60 85 110 +125 Junction Temperature (TJ) - ºC Junction Temperature (TJ) - ºC Figure 5: Power Dissipation (Typical) Figure 6: Maximum Allowable Case Temperature vs. RMS On-State Current vs. On-State Current 12 130 verage On-State Power Dissipation[P] - WattsD (AV) 124680 CLCOUOARNDRD:EU NRCTeT sI OWisNtAiv VAeEN oFGrO LIRnEdM: u :3c 6tSi0vineousoidal Max Allowable Case Temperature (T) - CC111789012000000 QQxxxx1100RNyyyy Qxx10Lyy A 60 0 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 RMS On-State Current [IT(RMS)] - AMPS RMS On-State Current [IT(RMS)] - AMPS ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs Figure 7: Maximum Allowable Ambient Temperature Figure 8: On-State Current vs. On-State Voltage vs. On-State Current (Typical) 120 20 erature 110100 CLAFORUNEARGEDRL A:EE RN:I Re3T s6R Wi0sAºtATivIVNeE GoF rO -I RnNdMOu: c HStiEivnAeuT sCSoOIiNdNaKDl UCTION aneousMPS1168 TC = 25 ºC x Allowable Ambient Temp(T) - ºCA456789000000 QQxxxx1100LRyy QQxxxx1100RLHHyy Positive or Negative Instant) - AOn-State Current (IT1112468024 Ma 30 0 20 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Positive or Negative Instantaneous On-State Voltage RMS On-State Current [I ] - AMPS (V) - Volts T(RMS) T Figure 9: Surge Peak On-State Current vs. Number of Cycles 1000 ent SLOUPAPDL: YR eFsRiEstQivUeENCY: 60 Hz Sinusoidal urr RMS On-State Current: [I ]: Maximum Rated C T(RMS) e Value at Specified Case Temperature at St n- 100 Notes: etitive) OAMPS 12.. Gf Ooavllteoerw lcoionandgt mrsoualr ymg ena oyct ub rberee l norets ptin edtaeutrrevindag l.u anntidl jiumnmcteiodnia tely on-Rep) - (ITSM10 treatmedp evraaltuuer.e has returned to steady-state N e ( g ur S k a e P 1 1 10 100 1000 Surge Current Duration - Full Cycles ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs Soldering Parameters Reflow Condition Pb – Free assembly t P - Temperature Min (T ) 150°C TP s(min) PArvee rHaegaet ramp-- u TTepimm raept ee(mr (aLitniuq rtueoi dMmuaasxx T )e( Tm(tss(pm)a)x ())T) to peak 526°00C 0–/° sC1e8c0o nsde cmsax erutare TS(mTaxL) RRaammpp--uupp tL L p T to T - Ramp-up Rate 5°C/second max m PPrreehheeaatt RRaammpp--ddoown S(max) L e T - Temperature (T) (Liquidus) 217°C T Reflow L S(min) t - Time (min to max) (t) 60 – 150 seconds S s Peak Temperature (T) 260+0/-5 °C P 25 Time within 5°C of actual peak Temperature (tp) 20 – 40 seconds time to peak temperature Time Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (T) 8 minutes Max. P Do not exceed 280°C Physical Specifications Environmental Specifications Terminal Finish 100% Matte Tin-plated Test Specifications and Conditions Body Material UclLas rseificocagtnioizne d9 4eVp-o0x.y meeting flammabilty AC Blocking MACIL v-SoTltDag-7e5 @0, 1M2-51°0C4 0fo, rC 1o0n0d8 A h oAuprpslied Peak Terminal Material Copper Alloy MIL-STD-750, M-1051, 100 cycles; -40°C to Temperature Cycling +150°C, 15-min dwell-time EIA/JEDEC, JESD22-A101 1008 hours; 320V - Temperature/Humidity DC: 85°C; 85% rel humidity Design Considerations MIL-STD-750, M-1031, High Temp Storage 1008 hours; 150°C Careful selection of the correct device for the application’s Low-Temp Storage 1008 hours; -40°C operating parameters and environment will go a long way Resistance to MIL-STD-750 Method 2031 toward extending the operating life of the Thyristor. Good Solder Heat Solderability ANSI/J-STD-002, category 3 Test A design practice should limit the maximum continuous Lead Bend MIL-STD-750, M-2036 Cond E current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs Dimensions — TO-220AB (R-Package) — Non-Isolated Mounting Tab Common with Center Lead TC MEASURING POINT Inches Millimeters ØE A O P .83.2103 Dimension Min Max Min Max MT2 A 0.380 0.420 9.65 10.67 B C AREA (REF.) B 0.105 0.115 2.67 2.92 D 0.17 in2 1.35.2366 C 0.230 0.250 5.84 6.35 7.01 D 0.590 0.620 14.99 15.75 .276 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.79 3.30 F G 0.540 0.575 13.72 14.61 NOTCH IN GATE LEAD TO ID. NON-ISOLATED TAB H 0.025 0.035 0.64 0.89 R G J 0.195 0.205 4.95 5.21 L H K 0.095 0.105 2.41 2.67 L 0.060 0.075 1.52 1.91 K N M 0.085 0.095 2.16 2.41 Note: Maximum torque to J M be applied to mounting tab N 0.018 0.024 0.46 0.61 MT1 MT2 GATE is 8 in-lbs. (0.904 Nm). O 0.178 0.188 4.52 4.78 P 0.045 0.060 1.14 1.52 R 0.038 0.048 0.965 1.22 Dimensions — TO-220AB (L-Package) — Isolated Mounting Tab TC MEASURING POINT Dimension Inches Millimeters ØE A O P .83.2103 A 0M.3i8n0 0M.4a2x0 9M.6in5 1M0.a6x7 B B 0.105 0.115 2.67 2.92 C AREA (REF.) C 0.230 0.250 5.84 6.35 0.17 in2 13.36 D .526 D 0.590 0.620 14.99 15.75 7.01 E 0.142 0.147 3.61 3.73 .276 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 F H 0.025 0.035 0.64 0.89 J 0.195 0.205 4.95 5.21 R G K 0.095 0.105 2.41 2.67 L L 0.060 0.075 1.52 1.91 H M 0.085 0.095 2.16 2.41 N 0.018 0.024 0.46 0.61 K N Note: Maximum torque to J M be applied to mounting tab O 0.178 0.188 4.52 4.78 MT1 MT2 GATE is 8 in-lbs. (0.904 Nm). P 0.045 0.060 1.14 1.52 R 0.038 0.048 0.965 1.22 ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs Dimensions — TO-263AB (N-Package) — D2-PAK Surface Mount B V TC MEASURINCG POINT AREA: 0.11 IN2 Dimension Inches Millimeters MT2 E Min Max Min Max A 0.360 0.370 9.14 9.40 8.41 B 0.380 0.420 9.65 10.67 7.01 .331 A .276 C 0.178 0.188 4.52 4.78 S D 0.025 0.035 0.64 0.89 E 0.045 0.060 1.14 1.52 W U F 0.060 0.075 1.52 1.91 MT1 GATE K J G 0.095 0.105 2.41 2.67 G 8.13 H 0.092 0.102 2.34 2.59 D H .320 F J 0.018 0.024 0.46 0.61 K 0.090 0.110 2.29 2.79 11.68 2.16 .460 .085 S 0.590 0.625 14.99 15.88 V 0.035 0.045 0.89 1.14 U 0.002 0.010 0.05 0.25 7.01 7.01 W 0.040 0.070 1.016 1.78 .276 .276 16.89 .665 8.89 1.40 .350 .055 3.81 .150 2.03 .080 6.60 .260 Product Selector Voltage (xx) Gate Sensitivity Quadrants Part Number Type Package 400V 600V 800V 1000V I – II – III IV Qxx10L4 X X X X 25 mA 50 mA Standard Triac TO-220L Qxx10R4 X X X X 25 mA 50 mA Standard Triac TO-220R Qxx10N4 X X X X 25 mA 50 mA Standard Triac TO-263 D²-PAK Qxx10L5 X X X X 50 mA Standard Triac TO-220L Qxx10R5 X X X X 50 mA TYP. 75 mA Standard Triac TO-220R Qxx10N5 X X X X 50 mA TYP. 75 mA Standard Triac TO-263 D²-PAK Qxx10LH5 X X X X 50 mA TYP. 75 mA Alternistor Triac TO-220L Qxx10RH5 X X X X 50 mA Alternistor Triac TO-220R Qxx10NH5 X X X X 50 mA Alternistor Triac TO-263 D²-PAK Packing Options Part Number Marking Weight Packing Mode Base Quantity Qxx10L/RyyTP Qxx10L/Ryy 2.2 g Tube Pack 500 (50 per tube) Qxx10NyyTP Qxx10Nyy 1.6 g Tube 500 (50 per tube) Qxx10NyyRP Qxx10Nyy 1.6 g Embossed Carrier 500 Note: xx = voltage, yy = type & sensitivity ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19

Thyristors 10 Amp Standard & Alternistor (High Commutation) Triacs TO-263 Embossed Carrier Reel Pack (RP) Specifications Meets all EIA-481-2 Standards 0.63 0.157 (16.0) (4.0) Gate 0.059 DIA (1.5) MT1 0.945 0.827 * (24.0) (21.0) * Cover tape MT2 12.99 0.512 (13.0) Arbor (330.0) Hole Dia. Dimensions are in inches (and millimeters). 1.01 (25.7) Direction of Feed Part Numbering System Part Marking System Q 60 10 L H5 56 TO-220 AB - (L and R Package) TO-263 AB - (N Package) DEVICE TYPE LEAD FORM DIMENSIONS Q: Triac or Alternistor xx: Lead Form Option VOLTAGE RATING 40: 400V SENSITIVITY 60: 600V Standard Triac: 80: 800V 4: 25 mA (QI, II, III) Q6010R5 K0: 1000V 50 mA (QIV) 5: 50 mA (QI, II, III) YMXXX CURRENT RATING Alternistor Triac: 10: 10A H5: 50mA (QI, II, III) ® PACKAGE TYPE L: TO-220 Isolated R: TO-220 Non-Isolated N: TO-263 (PDak) 2 Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimier-electronics. ©2019 Littelfuse, Inc Specifications are subject to change without notice. Revised: 11/04/19