TC7662A Charge Pump DC-to-DC Converter Features Package Type • Wide Operating Range 8-Pin PDIP - 3V to 18V 8-Pin CERDIP • Increased Output Current (40mA) • Pin Compatible with ICL7662/SI7661/TC7660/ NC 1 8 VDD LTC1044 C+ 2 7 OSC TC7662A • No External Diodes Required GND 3 6 NC • Low Output Impedance @ I = 20mA L - 40 Typ. C– 4 5 VOUT • No Low-Voltage Terminal Required • CMOS Construction General Description • Available in 8-Pin PDIP and 8-Pin CERDIP Packages The TC7662A is a pin-compatible upgrade to the industry standard TC7660 charge pump voltage Applications converter. It converts a +3V to +18V input to a corresponding -3V to -18V output using only two low- • Laptop Computers cost capacitors, eliminating inductors and their • Disk Drives associated cost, size and EMI. In addition to a wider • Process Instrumentation power supply input range (3V to 18V versus 1.5V to 10V for the TC7660), the TC7662A can source output • P-based Controllers currents as high as 40mA. The on-board oscillator Device Selection Table operates at a nominal frequency of 12kHz. Operation below 12kHz (for lower supply current applications) is also possible by connecting an external capacitor from Operating Part Package Temp. OSC to ground. Number Range The TC7662A directly is recommended for designs requiring greater output current and/or lower input/ TC7662ACPA 8-Pin PDIP 0°C to +70°C output voltage drop. It is available in 8-pin PDIP and TC7662AEPA 8-Pin PDIP -40°C to +85°C CERDIP packages in commercial and extended TC7662AIJA 8-Pin CERDIP -25°C to +85°C temperature ranges. TC7662AMJA 8-Pin CERDIP -55°C to +125°C  2001-2012 Microchip Technology Inc. DS21468B-page 1

TC7662A Functional Block Diagram 8 VDD I TC7662A 7 OSC Level P SW1 Shift Q + F/F 2 CAP+ C – Q Level N SW4 + Comparator Shift CP with Hysteresis EXT GND 3 VREF + Level N SW2 OUT CR EXT Shift 4 – CAP RL Level N SW3 Shift 5 VOUT DS21468B-page 2  2001-2012 Microchip Technology Inc.

TC7662A 1.0 ELECTRICAL Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These CHARACTERISTICS are stress ratings only and functional operation of the device Absolute Maximum Ratings* at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Supply Voltage V to GND.................................+18V Exposure to Absolute Maximum Rating conditions for DD extended periods may affect device reliability. Input Voltage (Any Pin).........(VDD + 0.3) to (VSS – 0.3) Current into Any Pin............................................10mA Output Short Circuit...........Continuous (at 5.5V Input) ESD Protection................................................±2000V Package Power Dissipation (T  70°C) A 8-Pin CERDIP..........................................800mW 8-Pin PDIP...............................................730mW Package Thermal Resistance CPA, EPA  .........................................140°C/W JA IJA, MJA  ............................................90°C/W JA Operating Temperature Range C Suffix............................................0°C to +70°C I Suffix..........................................-25°C to +85°C E Suffix.........................................-40°C to +85°C M Suffix......................................-55°C to +125°C Storage Temperature Range..............-65°C to +150°C TC7662A ELECTRICAL SPECIFICATIONS Electrical Characteristics: V = 15V, T = +25°C, Test circuit (Figure3-1) unless otherwise noted. DD A Symbol Parameter Min Typ Max Units Test Conditions V Supply Voltage 3 — 18 V DD I Supply Current — — — A R =  S L — 510 700 V = +15V DD — 560 — 0C  T  +70C A — 650 — -55°C  T  +125°C A — 190 — V = +5V DD — 210 — 0C  T  +70C A — 210 — -55°C  T  +125°C A R Output Source Resistance — 40 50  I = 20mA, V = +15V O L DD — 50 60 I = 40mA, V = +15V L DD — 100 125 I = 3mA, V = +5V L DD F Oscillator Frequency — 12 — kHz OSC P Power Efficiency 93 97 — % V = +15V EFF DD — — — R = 2k L V Voltage Efficiency 99 99.9 — % V = +15V EFF DD — — — R =  L 96 — — Over operating temperature range.  2001-2012 Microchip Technology Inc. DS21468B-page 3

TC7662A 2.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table2-1. TABLE 2-1: PIN FUNCTION TABLE Pin No. (8-Pin PDIP, Symbol Description CERDIP) 1 NC No connection. 2 C+ Charge pump capacitor positive terminal. 3 GND Ground terminal. 4 C- Charge pump capacitor negative terminal. 5 V Output voltage. OUT 6 NC No connection. 7 OSC Oscillator control input. Bypass with an external capacitor to slow the oscillator. 8 V Power supply positive voltage input. DD DS21468B-page 4  2001-2012 Microchip Technology Inc.

TC7662A 3.0 DETAILED DESCRIPTION 3.1 Theoretical Power Efficiency Considerations The TC7662A is a capacitive charge pump (sometimes called a switched-capacitor circuit), where four In theory, a voltage converter can approach 100% MOSFET switches control the charge and discharge of efficiency if certain conditions are met: a capacitor. 1. The drive circuitry consumes minimal power. The functional block diagram shows how the switching 2. The output switches have extremely low ON action works. SW1 and SW2 are turned on simulta- resistance and virtually no offset. neously, charging C to the supply voltage, V . This P DD 3. The impedances of the pump and reservoir assumes that the ON resistance of the MOSFETs in capacitors are negligible at the pump frequency. series with the capacitor produce a charging time (3time constants) less than the ON time provided by The TC7662A approaches these conditions for the oscillator frequency, as shown: negative voltage conversion if large values of CP and C are used. R 3 (R C ) <C /(0.5 f ). DS(ON) P P OSC Note: Energy is lost only in the transfer of charge In the next cycle, SW1 and SW2 are turned OFF and, between capacitors if a change in voltage after a very short interval with all switches OFF occurs. (preventing large currents from occurring due to cross The energy lost is defined by: conduction), SW3 and SW4 are turned ON. The charge in CP is then transferred to CR, but with the polarity E = 1/2 CP (V12 – V22) inverted. In this way, a negative voltage is derived. V and V are the voltages on C during the pump and 1 2 P An oscillator supplies pulses to a flip-flop that is fed to transfer cycles. If the impedances of C and C are P R a set of level shifters. These level shifters then drive relatively high at the pump frequency (refer to Figure3- each set of switches at one-half the oscillator 1), compared to the value of R , there will be a L frequency. substantial difference in voltages V and V . Therefore, 1 2 The oscillator has a pin that controls the frequency it is desirable not only to make CR as large as possible ofoscillation. Pin 7 can have a capacitor added that to eliminate output voltage ripple, but also to employ a isconnected to ground. This will lower the frequency correspondingly large value for CP in order to achieve ofthe oscillator by adding capacitance to the maximum efficiency of operation. internaltiming capacitor of the TC7662A. (See Typical 3.2 Dos and Don'ts Characteristics – Oscillator Frequency vs. C .) OSC • Do not exceed maximum supply voltages. FIGURE 3-1: TC7662A TEST CIRCUIT • Do not short circuit the output to V+ supply for IS voltages above 5.5V for extended periods; NC 1 8 VDD however, transient conditions including start-up 2 7 IL (+5V) are okay. CP + 10μF 3 TC7662A 6 NC COSC RL • When using polarized capacitors in the inverting mode, the + terminal of C must be connected to P 4 5 VOUT pin 2 of the TC7662A and the + terminal of C (-5V) R must be connected to GND (pin 3). CR 10μF • If the voltage supply driving the TC7662A has a + large source impedance (25-30 ohms), then a 2.2F capacitor from pin 8 to ground may be required to limit the rate of rise of the input voltage to less than 2V/sec.  2001-2012 Microchip Technology Inc. DS21468B-page 5

TC7662A 4.0 TYPICAL APPLICATIONS Combining the four R terms as R , we see that: SWX SW 1 4.1 Simple Negative Voltage R  2 x R + + 4 x ESR + ESR  O SW f x C CP CR PUMP P Converter R , the total switch resistance, is a function of supply The majority of applications will undoubtedly utilize the SW voltage and temperature (See Section5.0, Typical TC7662A for generation of negative supply voltages. Characteristics “Output Source Resistance” graphs), Figure4-1 shows typical connections to provide a typically 23 at+25°C and 5V. Careful selection of C negative supply where a positive supply of +3V to +18V P and C willreduce the remaining terms, minimizing the is available. R output impedance. High value capacitors will reduce the 1/(f x C ) component, and low ESR FIGURE 4-1: SIMPLE NEGATIVE PUMP P capacitors will lower the ESR term. Increasing the CONVERTER AND ITS oscillator frequency will reduce the 1/(f x C ) term, PUMP P OUTPUT EQUIVALENT but may have the side effect of a net increase in output impedance when C > 10F and there is not enough VDD P time to fully charge the capacitors every cycle. In a typ- 1 8 ical application when f = 12kHz and C = C = C = OSC P R 2 7 10F: 10μF + 3 TC7662A 6 1 4 5 VOUT = -V+ –RO VOUT RO  2 x 23 + ( 5 x 1 2 3 x 1 0 x 1 0 - 6 ) + 4 x ESRCP + ESRCR 10μF– VVVVDDDDDDDD RO  (46 + 20 + 5 x ESRC) + + Since the ESRs of the capacitors are reflected in the A B output impedance multiplied by a factor of 5, a high value could potentially swamp out a low 1/(f x C ) PUMP P The output characteristics of the circuit in Figure4-1 term, rendering an increase in switching frequency are those of a nearly ideal voltage source in series with orfilter capacitance ineffective. Typical electrolytic a resistance as shown in Figure 4-1b. The voltage capacitors may have ESRs as high as 10. source has a value of -(V ). The output impedance DD (R ) is a function of the ON resistance of the internal O MOS switches (shown in the Functional Block Diagram), the switching frequency, the value of C and P C , and the ESR (equivalent series resistance) of C R P and C . A good first order approximation for R is: R O R  2(R + R + ESR ) + 2(R + R + O SW1 SW2 CP SW3 SW4 1 ESR ) + + ESR CP f x C CR PUMP P f (f = O S C , R = MOSFET switch resistance) PUMP SWX 2 DS21468B-page 6  2001-2012 Microchip Technology Inc.

TC7662A 4.2 Output Ripple 4.3 Paralleling Devices ESR also affects the ripple voltage seen at the output. Any number of TC7662A voltage converters may be The total ripple is determined by 2 voltages, A and B, paralleled to reduce output resistance (Figure4-3). as shown in Figure4-2. Segment A is the voltage drop Thereservoir capacitor, C , serves all devices, while R across the ESR of C at the instant it goes from being each device requires its own pump capacitor, C . The R P charged by C (current flowing into C ) to being dis- resultant output resistance would be approximately: P R charged through the load (current flowing out of C ). R R (of TC7662A) The magnitude of this current change is 2 x IOUT, hence ROUT = OUT the total drop is 2 x I x ESR volts. Segment B is n (number of devices) OUT CR the voltage change across C during time t , the half of R 2 the cycle when CR supplies current to the load. The 4.4 Cascading Devices drop at B is I x t /C volts. The peak-to-peak ripple OUT 2 R voltage is the sum of these voltage drops: The TC7662A may be cascaded as shown (Figure4-4) to produce larger negative multiplication of the initial ( 1 ) V  + 2 x ESR x I supply voltage. However, due to the finite efficiency of RIPPLE 2 x fPUMP x CR CR OUT each device, the practical limit is 10 devices for light loads. The output voltage is defined by: FIGURE 4-2: OUTPUT RIPPLE V = – n (V ) OUT IN t2 t1 where n is an integer representing the number of devices cascaded. The resulting output resistance would be approximately the weighted sum of the 0 B individual TC7662A ROUT values. V A -(VDD) FIGURE 4-3: PARALLELING DEVICES LOWERS OUTPUT IMPEDANCE VDD 1 8 2 7 1 8 TC7662A C1 3 6 2 7 RL TC7662A 4 "1" 5 C1 3 6 4 "n" 5 + C2 FIGURE 4-4: INCREASED OUTPUT VOLTAGE BY CASCADING DEVICES VDD 1 8 2 7 1 8 + TC7662A 10μF 3 6 2 7 TC7662A + 4 "1" 5 10μF 3 6 4 "n" 5 V * OUT 10μF + 10μF *VOUT = -nVDD  2001-2012 Microchip Technology Inc. DS21468B-page 7

TC7662A 4.5 Changing the TC7662A Oscillator 4.7 Combined Negative Voltage Frequency Conversion and Positive Supply Multiplication It is possible to increase the conversion efficiency of the TC7662A at low load levels by lowering the Figure4-7 combines the functions shown in Figure4-1 and Figure4-6 to provide negative voltage conversion oscillator frequency. This reduces the switching losses, and positive voltage doubling simultaneously. This and is shown in Figure4-5. However, lowering the approach would be, for example, suitable for generat- oscillator frequency will cause an undesirable increase ing +9V and -5V from an existing +5V supply. In this in the impedance of the pump (C ) and reservoir (C ) P R instance, capacitors C and C perform the pump and capacitors; this is overcome by increasing the values of 1 3 reservoir functions, respectively, for the generation of C and C by the same factor that the frequency has P R the negative voltage, while capacitors C and C are been reduced. For example, the addition of a 100pF 2 4 pump and reservoir, respectively, for the doubled capacitor between pin 7 (OSC) and V will lower the DD positive voltage. There is a penalty in this configuration oscillator frequency to 2kHz from its nominal frequency which combines both functions, however, in that the of 12kHz (multiple of 6), and thereby necessitate a source impedances of the generated supplies will be corresponding increase in the value of C and C (from P R somewhat higher due to the finite impedance of the 10F to 68F). common charge pump driver at pin 2 of the device. FIGURE 4-5: LOWERING OSCILLATOR FIGURE 4-7: COMBINED NEGATIVE FREQUENCY CONVERTER AND POSITIVE DOUBLER VDD 1 8 VDD V-(VODUDT =– VF) 2 7 1 8 10μF + 3 TC7662A 6 COSC 2 TC7662A 7 D1 + C3 3 6 4 5 VOUT + 10μF +C1 4 5 D2 V(2O VUDTD =) – (2 VF) + C2 + C4 4.6 Positive Voltage Doubling The TC7662A may be employed to achieve positive voltage doubling using the circuit shown in Figure4-6. 4.8 Voltage Splitting In this application, the pump inverter switches of the The same bidirectional characteristics can be used to TC7662A are used to charge CP to a voltage level of split a higher supply in half, as shown in Figure4-8. VDD – VF (where VDD is the supply voltage and VF is The combined load will be evenly shared between the the forward voltage on CP plus the supply voltage (VDD) two sides. Because the switches share the load in applied through diode D2 to capacitor CR). The voltage parallel, the output impedance is much lower than in thus created on CR becomes (2 VDD) – (2 VF), or twice the standard circuits, and higher currents can be drawn the supply voltage minus the combined forward voltage from the device. By using this circuit, and then the drops of diodes D1 and D2. circuit of Figure4-4, +15V can be converted (via +7.5V The source impedance of the output (V ) will depend and -7.5V) to a nominal -15V, though with rather high OUT on the output current, but for V = 5V and an output series resistance (~250). DD current of 10 mA, it will be approximately 60. FIGURE 4-8: SPLITTING A SUPPLY IN HALF FIGURE 4-6: POSITIVE VOLTAGE MULTIPLIER VDD + VDD RL1 50μF – 1 8 12 87 D1 VOUT = VVDODU2 –T V= – 5μ0F –+ 23 TC7662A 76 3 TC7662A 6 D2 (2 VDD) – (2 VF) RL2 4 5 4 5 + CP + CR 50μF + – V– DS21468B-page 8  2001-2012 Microchip Technology Inc.

TC7662A 5.0 TYPICAL CHARACTERISTICS Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Circuit of Figure3-1, C = C = 10F, C  C  1, T = 25°C unless otherwise noted. P R ESRCP ESRCR A Supply Current vs. Temperature Oscillator Frequency vs. COSC 700 TTA = +25°C 600 10k A) μ T (500 Hz) REN400 VDD = 15V CY ( 1k R N U E C300 U UPPLY 200 VDD = 5V FREQ 100 S 100 0 10 -60 -40 -20 0 20 40 60 80 100 120 140 1 10 100 1000 10,000 TEMPERATURE (°C) CAPACITANCE (pF) Frequency vs. Temperature Output Resistance vs. Temperature 20 160 CY (kHz) 111864 ΩSTANCE ( ) 111420000 VDD = 5V, IL = 3mA N SI UE 12 RE 80 Q T E U R 10 P 60 F T 8 OU 40 VDD = 15V, IL = 20mA 6 20 -60 -40 -20 0 20 40 60 80 100 120 140 -60 -40 -20 0 20 40 60 80 100 120 140 TEMPERATURE (°C) TEMPERATURE (°C) Output Resistance vs. Input Voltage Power Conversion Efficiency vs. ILOAD 110 Y (%)110100 115605 100 TA = +25°C CIENC 8900 Efficiency 112305mA) ΩE ( ) 8900 VERSION EFFI 64750000 SCuuprrpelnyt 961700055LY CURRENT ( T RESISTANC 64750000 IL = 20mA N P U CO 30 45 UP TP 30 OWER 2100 TA = +25°C 3105 S OU 2100 P 0 0 8 16 24 32 40 48 56 64 72 80 0 2 4 6 8 10 12 14 16 18 20 LOAD CURRENT (mA) INPUT VOLTAGE (V)  2001-2012 Microchip Technology Inc. DS21468B-page 9

TC7662A 6.0 PACKAGING INFORMATION 6.1 Package Marking Information Package marking data not available at this time. 6.2 Package Dimensions Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 8-Pin Plastic DIP PIN1 .260 (6.60) .240 (6.10) .045 (1.14) .070 (1.78) .030 (0.76) .040 (1.02) .310 (7.87) .400 (10.16) .290 (7.37) .348 (8.84) .200 (5.08) .140 (3.56) .040 (1.02) .020 (0.51) .015 (0.38) 3°MIN. .150 (3.81) .008 (0.20) .115 (2.92) .400 (10.16) .310 (7.87) .110 (2.79) .022 (0.56) .090 (2.29) .015 (0.38) Dimensions: inches (mm) DS21468B-page 10  2001-2012 Microchip Technology Inc.

TC7662A Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 8-Pin CDIP (Narrow) .110 (2.79) .090 (2.29) PIN1 .300 (7.62) .230 (5.84) .055 (1.40) MAX. .020 (0.51) MIN. .400 (10.16) .320 (8.13) .370 (9.40) .290 (7.37) .040 (1.02) .200 (5.08) .020 (0.51) .160 (4.06) ..210205 ((53..0188)) .150M (I3N..81) ..001058 ((00..3280)) 3°MIN. .400 (10.16) .320 (8.13) .065 (1.65) .020 (0.51) .045 (1.14) .016 (0.41) Dimensions: inches (mm)  2001-2012 Microchip Technology Inc. DS21468B-page 11

TC7662A 7.0 REVISION HISTORY Revision B (December 2012) Added a note to each package outline drawing. DS21468B-page 12  2001-2012 Microchip Technology Inc.

TC7662A Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. Your local Microchip sales office 2. The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.  2001-2012 Microchip Technology Inc. DS21468B-page13

TC7662A NOTES: DS21468B-page14  2001-2012 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, dsPIC, and may be superseded by updates. It is your responsibility to FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, ensure that your application meets with your specifications. PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash MICROCHIP MAKES NO REPRESENTATIONS OR and UNI/O are registered trademarks of Microchip Technology WARRANTIES OF ANY KIND WHETHER EXPRESS OR Incorporated in the U.S.A. and other countries. IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, INCLUDING BUT NOT LIMITED TO ITS CONDITION, MTP, SEEVAL and The Embedded Control Solutions QUALITY, PERFORMANCE, MERCHANTABILITY OR Company are registered trademarks of Microchip Technology FITNESS FOR PURPOSE. Microchip disclaims all liability Incorporated in the U.S.A. arising from this information and its use. Use of Microchip Silicon Storage Technology is a registered trademark of devices in life support and/or safety applications is entirely at Microchip Technology Inc. in other countries. the buyer’s risk, and the buyer agrees to defend, indemnify and Analog-for-the-Digital Age, Application Maestro, BodyCom, hold harmless Microchip from any and all damages, claims, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, suits, or expenses resulting from such use. No licenses are dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, conveyed, implicitly or otherwise, under any Microchip ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial intellectual property rights. Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2001-2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620768426 QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures == ISO/TS 16949 == are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.  2001-2012 Microchip Technology Inc. DS21468B-page 15

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