TC4421A/TC4422A 9A High-Speed MOSFET Drivers Features General Description • High Peak Output Current: 10A (typ.) The TC4421A/TC4422A are improved versions of the • Low Shoot-Through/Cross-Conduction Current in earlier TC4421/TC4422 family of single-output Output Stage MOSFET drivers. These devices are high-current buf- fer/drivers capable of driving large MOSFETs and Insu- • Wide Input Supply Voltage Operating Range: lated Gate Bipolar Transistors (IGBTs). The - 4.5V to 18V TC4421A/TC4422A have matched output rise and fall • High Continuous Output Current: 2A (max.) times, as well as matched leading and falling-edge • Matched Fast Rise and Fall Times: propagation delay times. The TC4421A/TC4422A - 15ns with 4,700pF Load devices also have very low cross-conduction current, - 135ns with 47,000pF Load reducing the overall power dissipation of the device. • Matched Short Propagation Delays: 42ns (typ.) These devices are essentially immune to any form of • Low Supply Current: upset, except direct overvoltage or over-dissipation. They cannot be latched under any conditions within - With Logic ‘1’ Input – 130µA (typ.) their power and voltage ratings. These parts are not - With Logic ‘0’ Input – 33µA (typ.) subject to damage or improper operation when up to • Low Output Impedance: 1.2 (typ.) 5V of ground bounce is present on their ground • Latch-Up Protected: Will Withstand 1.5A Output terminals. They can accept, without damage or logic Reverse Current upset, more than 1A inductive current of either polarity • Input Will Withstand Negative Inputs Up To 5V being forced back into their outputs. In addition, all terminals are fully protected against up to 4kV of • Pin-Compatible with the TC4420/TC4429 electrostatic discharge. and TC4421/TC4422 MOSFET Drivers • Space-Saving, Thermally-Enhanced, 8-Pin DFN The TC4421A/TC4422A inputs may be driven directly Package from either TTL or CMOS (3V to 18V). In addition, 300mV of hysteresis is built into the input, providing Applications noise immunity and allowing the device to be driven from slowly rising or falling waveforms. • Line Drivers for Extra Heavily-Loaded Lines With both surface-mount and pin-through-hole • Pulse Generators packages, in addition to a wide operating temperature • Driving the Largest MOSFETs and IGBTs range, the TC4421A/TC4422A family of 9A MOSFET • Local Power ON/OFF Switch drivers fit into most any application where high gate/line • Motor and Solenoid Driver capacitance drive is required. • LF Initiator Package Types(1) 8-Pin TC4421ATC4422A 8-Pin DFN(2) TC4421ATC4422A 5-Pin TO-220 PDIP/SOIC Tab is VDD 1 8 VDD VDD VDD 1 8 VDD VDD Common INPUT 2 TC4421A7 OUTPUT OUTPUT INPUT 2 TC4421A 7 OUTPUT OUTPUT to VDD NC 3 TC4422A6 OUTPUT OUTPUT NC 3 TC4422A 6 OUTPUT OUTPUT TC4421A GND 4 5 GND GND TC4422A GND 4 5 GND GND Note1: Duplicate pins must both be connected for proper operation. PUTGNDVDDGNDTPUT 2: Exposed pad of the DFN package is electrically isolated. N U I O  2005-2013 Microchip Technology Inc. DS21946B-page 1

TC4421A/TC4422A Functional Block Diagram V DD TC4421A Inverting 130µA Output 300mV Cross-Conduction Reduction and Pre-Drive Output Circuitry TC4422A Input Non-Inverting 4.7V GND Effective Input C = 25pF DS21946B-page 2  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A 1.0 ELECTRICAL † Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These CHARACTERISTICS are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the Absolute Maximum Ratings † operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for Supply Voltage.....................................................+20V extended periods may affect device reliability. Input Voltage....................(V + 0.3V) to (GND – 5V) DD Input Current (V > V )...................................50mA IN DD DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, T = +25°C with 4.5V  V  18V. A DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL — 1.3 0.8 V Input Current I –10 — +10 µA 0VV V IN IN DD Input Voltage V –5 — V – 0.3 V IN DD Output High Output Voltage V V – 0.025 — — V DC Test OH DD Low Output Voltage V — — 0.025 V DC Test OL Output Resistance, High R — 1.25 1.5  I = 10mA, V = 18V OH OUT DD Output Resistance, Low R — 0.8 1.1  I = 10mA, V = 18V OL OUT DD Peak Output Current I — 10.0 — A V = 18V PK DD Continuous Output Current I 2 — — A 10V V  18V, T = +25°C DC DD A (TC4421A/TC4422A CAT only) (Note2) Latch-Up Protection I — >1.5 — A Duty cycle2%, t 300µsec REV Withstand Reverse Current Switching Time (Note1) Rise Time t — 28 34 ns Figure4-1, C = 10,000pF R L Fall Time t — 26 32 ns Figure4-1, C = 10,000pF F L Propagation Delay Time t — 38 45 ns Figure4-1, C = 10,000pF D1 L Propagation Delay Time t — 42 49 ns Figure4-1, C = 10,000pF D2 L Power Supply Power Supply Current I — 130 250 µA V = 3V S IN — 35 100 µA V = 0V IN Operating Input Voltage V 4.5 — 18 V DD Note 1: Switching times ensured by design. 2: Tested during characterization, not production tested.  2005-2013 Microchip Technology Inc. DS21946B-page 3

TC4421A/TC4422A DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V  V  18V. DD Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Current I –10 — +10 µA 0VV V IN IN DD Output High Output Voltage V V – 0.025 — — V DC Test OH DD Low Output Voltage V — — 0.025 V DC Test OL Output Resistance, High R — — 2.0  I = 10mA, V = 18V OH OUT DD Output Resistance, Low R — — 1.6  I = 10mA, V = 18V OL OUT DD Switching Time (Note1) Rise Time t — 38 45 ns Figure4-1, C = 10,000pF R L Fall Time t — 33 40 ns Figure4-1, C = 10,000pF F L Propagation Delay Time t — 50.4 60 ns Figure4-1, C = 10,000pF D1 L Propagation Delay Time t — 53 60 ns Figure4-1, C = 10,000pF D2 L Power Supply Power Supply Current I — 200 500 µA V = 3V S IN — 50 150 µA V = 0V IN Operating Input Voltage V 4.5 — 18 V DD Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  V  18V. DD Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (V) T –40 — +125 °C A Maximum Junction Temperature T — — +150 °C J Storage Temperature Range T –65 — +150 °C A Package Thermal Resistances Thermal Resistance, 5L-TO-220  — 71 — °C/W Without heat sink JA Thermal Resistance, 8L-6x5 DFN  — 33.2 — °C/W Typical 4-layer board with JA vias to ground plane Thermal Resistance, 8L-PDIP  — 125 — °C/W JA Thermal Resistance, 8L-SOIC  — 155 — °C/W JA DS21946B-page 4  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, T = +25°C with 4.5V  V  18V. A DD 180 300 160 250 140 ns) 120 22,000 pF ns) 200 5V Time ( 18000 Time ( 150 10V Rise 60 10,000 pF Fall 100 15V 40 50 20 1,000 pF 100 pF 0 0 4 6 8 10 12 14 16 18 100 1000 10000 100000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-1: Rise Time vs. Supply FIGURE 2-4: Fall Time vs. Capacitive Voltage. Load. 300 55 VDD = 15V 250 50 5V e (ns) 200 10V ns) 4405 Tim 150 me ( 35 tRISE se 100 Ti Ri 15V 30 tFALL 50 25 0 20 100 1000 10000 100000 -40 -25 -10 5 20 35 50 65 80 95 110125 Capacitive Load (pF) Temperature (°C) FIGURE 2-2: Rise Time vs. Capacitive FIGURE 2-5: Rise and Fall Times vs. Load. Temperature. 180 11E0--77 160 c) e 140 A·s me (ns) 110200 22,000 pF nergy ( 11E0--88 Fall Ti 6800 10,000 pF over E 40 s s 20 1,000 pF 100 pF Cro 0 11E0--99 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-3: Fall Time vs. Supply FIGURE 2-6: Crossover Energy vs Supply Voltage. Voltage.  2005-2013 Microchip Technology Inc. DS21946B-page 5

TC4421A/TC4422A Note: Unless otherwise indicated, T = +25°C with 4.5V  V  18V. A DD 80 140 S) 75 CLOAD = 10,000 pF 120 n 70 ay ( 65 A) 100 INPUT = High on Del 5650 (µCENT 80 Propagati 34455050 tDtD12 IQUIES 4600 INPUT = Low 30 20 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-7: Propagation Delay vs. FIGURE 2-10: Quiescent Supply Current Supply Voltage. vs. Supply Voltage. 75 220 VDD = 12V 200 VDD = 18V s) 70 n 180 ay ( 65 A) 160 pagation Del 556050 tD2 I (µQUIESCENT 11102480000 INPUT = HigIhNPUT = Low o 60 Pr 45 tD1 40 40 20 2 3 4 5 6 7 8 9 10 -40 -25 -10 5 20 35 50 65 80 95 110125 Input Amplitude (V) Temperature (°C) FIGURE 2-8: Propagation Delay vs. Input FIGURE 2-11: Quiescent Supply Current Amplitude. vs. Temperature. 60 2.0 VDD = 12V 1.9 VDD = 12V n Delay (ns) 455505 VCILNO =AD 5 =V 10,000 pF tD2 eshold (V) 1111....5678 VIH agatio 40 tD1 ut Thr 11..34 Prop 35 Inp 11..12 VIL 30 1.0 -40 -25 -10 5 20 35 50 65 80 95 110125 -40 -25 -10 5 20 35 50 65 80 95 110125 Temperature (°C) Temperature (°C) FIGURE 2-9: Propagation Delay vs. FIGURE 2-12: Input Threshold vs. Temperature. Temperature. DS21946B-page 6  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A Note: Unless otherwise indicated, T = +25°C with 4.5V  V  18V. A DD 2.0 180 1.9 160 VDD = 18V V) 1.8 A) 140 200 kHz ut Threshold ( 11111.....34567 VIH ply Current (m 1102680000 2 MHz 1 M51H00 z0k HkzHz Inp 1.2 VIL Sup 40 10 kHz 1.1 20 1.0 0 4 6 8 10 12 14 16 18 100 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-13: Input Threshold vs. Supply FIGURE 2-16: Supply Current vs. Voltage. Capactive Load (V = 18V). DD 5.0 200 4.5 VIN = 5V (TC4422A) 180 VDD = 12V 4.0 VIN = 0V (TC4421A) A) 160 m (cid:2)R ()OUT-HI 2233....0505 TJ = 150°C y Current ( 11102480000 2 MHz 1 MHz 100 k2H0z0 kHz 1.5 TJ = 25°C pl 60 50 kHz p 1.0 u 40 S 0.5 20 10 kHz 0.0 0 4 6 8 10 12 14 16 18 100 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-14: High-State Output FIGURE 2-17: Supply Current vs. Resistance vs. Supply Voltage. Capactive Load (V = 12V). DD 3.5 220 VIN = 0V (TC4422A) 200 VDD = 6V 3.0 VIN = 5V (TC4421A) A) 180 1 MHz 2.5 m 160 (cid:2)R ()OUT-LO 112...050 TJ = 25°CTJ = 150°C pply Current ( 1116802400000 2 MHz 50 k1H0z0 k2H0z0 kHz 0.5 Su 40 10 kHz 20 0.0 0 4 6 8 10 12 14 16 18 100 1,000 10,000 100,000 Supply Voltage (V) Capacitive Load (pF) FIGURE 2-15: Low-State Output FIGURE 2-18: Supply Current vs. Resistance vs. Supply Voltage. Capactive Load (V = 6V). DD  2005-2013 Microchip Technology Inc. DS21946B-page 7

TC4421A/TC4422A Note: Unless otherwise indicated, T = +25°C with 4.5V  V  18V. A DD 180 220 160 VDD = 18V 10,000 pF 200 VDD = 6V nt (mA) 112400 47,000 pF 22,000 pF 1000 pF nt (mA) 111468000 47,000 pF 22,000 pF Curre 10800 0.1 µF Curre 110200 0.1 µF 10,000 pF Supply 4600 470 pF Supply 468000 1000 pF 20 20 470 pF 0 0 10 100 1000 10000 10 100 1000 10000 Frequency (kHz) Frequency (kHz) FIGURE 2-19: Supply Current vs. FIGURE 2-21: Supply Current vs. Frequency (V = 18V). Frequency (V = 6V). DD DD 200 180 VDD = 12V 10,000 pF A) 160 m 47,000 pF ent ( 112400 22,000 pF y Curr 18000 0.1 µF 1000 pF pl 60 p u 40 S 470 pF 20 0 10 100 1000 10000 Frequency (kHz) FIGURE 2-20: Supply Current vs. Frequency (V = 12V). DD DS21946B-page 8  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. Pin No. Pin No. 8-Pin PDIP, Symbol Description 8-Pin DFN 5-Pin TO-220 SOIC 1 1 — V Supply input, 4.5V to 18V DD 2 2 1 INPUT Control input, TTL/CMOS-compatible input 3 3 — NC No connection 4 4 2 GND Ground 5 5 4 GND Ground 6 6 5 OUTPUT CMOS push-pull output 7 7 — OUTPUT CMOS push-pull output 8 8 3 V Supply input, 4.5V to 18V DD — PAD — NC Exposed metal pad — — TAB V Metal tab is at the V potential DD DD 3.1 Supply Input (V ) 3.3 CMOS Push-Pull Output DD The V input is the bias supply for the MOSFET driver The MOSFET driver output is a low-impedance, DD and is rated for 4.5V to 18V with respect to the ground CMOS, push-pull style output capable of driving a pin. The V input should be bypassed to ground with capacitive load with 9.0A peak currents. The MOSFET DD a local ceramic capacitor. The value of the capacitor driver output is capable of withstanding 1.5A peak should be chosen based on the capacitive load that is reverse currents of either polarity. being driven. A minimum value of 1.0µF is suggested. 3.4 Ground 3.2 Control Input The ground pins are the return path for the bias current The MOSFET driver input is a high-impedance, and for the high peak currents that discharge the load TTL/CMOS-compatible input. The input also has capacitor. The ground pins should be tied into a ground 300mV of hysteresis between the high and low plane or have very short traces to the bias supply thresholds that prevents output glitching even when the source return. rise and fall time of the input signal is very slow. 3.5 Exposed Metal Pad The exposed metal pad of the 6x5 DFN package is not internally connected to any potential. Therefore, this pad can be connected to a ground plane or other copper plane on a Printed Circuit Board (PCB) to aid in heat removal from the package. 3.6 Metal Tab The metal tab of the TO-220 package is connected to the V potential of the device. This connection to V DD DD can be used as a current carrying path for the device.  2005-2013 Microchip Technology Inc. DS21946B-page 9

TC4421A/TC4422A 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 10% 0V tD1 tD2 t t F R +18V 0.1µF 0.1µF 4.7µF 90% 90% 1 8 Output VDD VDD 10% 10% 0V Inverting Driver Input 2 Input Output 6 Output TC4421A 7 Output C = 10,000pF +5V L 90% GND GND Input 4 5 10% 0V +18V 90% 90% tD1 tD2 Input: 100kHz, Output tR tF square wave, 0V 10% 10% t = t  10nsec RISE FALL Non-Inverting Driver TC4422A Note: Pinout shown is for the DFN, PDIP and SOIC packages. FIGURE 4-1: Switching Time Test Circuits. DS21946B-page 10  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 5-Lead TO-220 Example: XXXXXXXXX TC4421A XXXXXXXXX XXXVAXTXX^eX^3XX YYWWNNN 0514256 8-Lead DFN Example: XXXXXXX TC4421A XXXXXXX VMF^e3 XXYYWW 0514 NNN 256 8-Lead PDIP (300 mil) Example: XXXXXXXX TC4421A XXXXXNNN PAe^3256 YYWW 0514 8-Lead SOIC (150 mil) Example: XXXXXXXX TC4421A XXXXYYWW SNe30514 NNN 256 Legend: XX...X Customer-specific information Y Year code (last digit of calendar year) YY Year code (last 2 digits of calendar year) WW Week code (week of January 1 is week ‘01’) NNN Alphanumeric traceability code e3 Pb-free JEDEC designator for Matte Tin (Sn) * This package is Pb-free. The Pb-free JEDEC designator ( e 3 ) can be found on the outer packaging for this package. Note: In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information.  2005-2013 Microchip Technology Inc. DS21946B-page 11

TC4421A/TC4422A 5-Lead Plastic Transistor Outline (AT) (TO-220) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging L H1 Q b e3 e1 E e EJECTOR PIN ØP a(5X) C1 A J1 F D Units INCHES* MILLIMETERS Dimension Limits MIN MAX MIN MAX Lead Pitch e .060 .072 1.52 1.83 Overall Lead Centers e1 .263 .273 6.68 6.93 Space Between Leads e3 .030 .040 0.76 1.02 Overall Height A .160 .190 4.06 4.83 Overall Width E .385 .415 9.78 10.54 Overall Length D .560 .590 14.22 14.99 Flag Length H1 .234 .258 5.94 6.55 Flag Thickness F .045 .055 1.14 1.40 Through Hole Center Q .103 .113 2.62 2.87 Through Hole Diameter P .146 .156 3.71 3.96 Lead Length L .540 .560 13.72 14.22 Base to Bottom of Lead J1 .090 .115 2.29 2.92 Lead Thickness C1 .014 .022 0.36 0.56 Lead Width b .025 .040 0.64 1.02 Mold Draft Angle a 3° 7° 3° 7° *Controlling Parameter Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC equivalent: TO-220 Drawing No. C04-036 DS21946B-page 12  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A 8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging  2005-2013 Microchip Technology Inc. DS21946B-page 13

TC4421A/TC4422A 8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E1 D 2 n 1  E A A2 L c A1  B1 p eB B Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .100 2.54 Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32 Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68 Base to Seating Plane A1 .015 0.38 Shoulder to Shoulder Width E .300 .313 .325 7.62 7.94 8.26 Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60 Overall Length D .360 .373 .385 9.14 9.46 9.78 Tip to Seating Plane L .125 .130 .135 3.18 3.30 3.43 Lead Thickness c .008 .012 .015 0.20 0.29 0.38 Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78 Lower Lead Width B .014 .018 .022 0.36 0.46 0.56 Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92 Mold Draft Angle Top  5 10 15 5 10 15 Mold Draft Angle Bottom  5 10 15 5 10 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-001 Drawing No. C04-018 DS21946B-page 14  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A 8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC) Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging E E1 p D 2 B n 1 h  45 c A A2   L A1 Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins n 8 8 Pitch p .050 1.27 Overall Height A .053 .061 .069 1.35 1.55 1.75 Molded Package Thickness A2 .052 .056 .061 1.32 1.42 1.55 Standoff § A1 .004 .007 .010 0.10 0.18 0.25 Overall Width E .228 .237 .244 5.79 6.02 6.20 Molded Package Width E1 .146 .154 .157 3.71 3.91 3.99 Overall Length D .189 .193 .197 4.80 4.90 5.00 Chamfer Distance h .010 .015 .020 0.25 0.38 0.51 Foot Length L .019 .025 .030 0.48 0.62 0.76 Foot Angle  0 4 8 0 4 8 Lead Thickness c .008 .009 .010 0.20 0.23 0.25 Lead Width B .013 .017 .020 0.33 0.42 0.51 Mold Draft Angle Top  0 12 15 0 12 15 Mold Draft Angle Bottom  0 12 15 0 12 15 * Controlling Parameter § Significant Characteristic Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010” (0.254mm) per side. JEDEC Equivalent: MS-012 Drawing No. C04-057  2005-2013 Microchip Technology Inc. DS21946B-page 15

TC4421A/TC4422A NOTES: DS21946B-page 16  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A APPENDIX A: REVISION HISTORY Revision A (May 2005) • Original Release of this Document. Revision B (January 2013) Added a note to each package outline drawing.  2005-2013 Microchip Technology Inc. DS21946B-page 17

TC4421A/TC4422A NOTES: l DS21946B-page 18  2005-2013 Microchip Technology Inc.

TC4421A/TC4422A PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX XXX Examples: a) TC4421AVAT: 9A High-Speed Inverting Device Temperature Package Tape & Reel MOSFET Driver, Range TO-220 package, -40°C to +125°C. b) TC4421AVOA: 9A High-Speed Inverting Device: TC4421A: 9A High-Speed MOSFET Driver, Inverting MOSFET Driver, TC4422A: 9A High-Speed MOSFET Driver, Non-Inverting SOIC package, -40°C to +125°C. Temperature Range: V = -40°C to +125°C c) TC4421AVMF: 9A High-Speed Inverting MOSFET Driver, Package: * AT = TO-220, 5-lead DFN package, MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead -40°C to +125°C. MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead (Tape and Reel) a) TC4422AVPA: 9A High-Speed PA = Plastic DIP (300 mil Body), 8-lead Non-Inverting MOSFET OA = Plastic SOIC (150 mil Body), 8-lead Driver, PDIP package, OA713 = Plastic SOIC (150 mil Body), 8-lead -40°C to +125°C. (Tape and Reel) b) TC4422AVOA: 9A High-Speed *All package offerings are Pb Free (Lead Free). Non-Inverting MOSFET Driver, SOIC package, -40°C to +125°C. c) TC4422AVMF: 9A High-Speed Non-Inverting MOSFET Driver, DFN package, -40°C to +125°C.  2005-2013 Microchip Technology Inc. DS21946B-page 19

TC4421A/TC4422A NOTES: DS21946B-page 20  2005-2013 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device Trademarks applications and the like is provided only for your convenience The Microchip name and logo, the Microchip logo, dsPIC, and may be superseded by updates. It is your responsibility to FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, ensure that your application meets with your specifications. PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash MICROCHIP MAKES NO REPRESENTATIONS OR and UNI/O are registered trademarks of Microchip Technology WARRANTIES OF ANY KIND WHETHER EXPRESS OR Incorporated in the U.S.A. and other countries. IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, INCLUDING BUT NOT LIMITED TO ITS CONDITION, MTP, SEEVAL and The Embedded Control Solutions QUALITY, PERFORMANCE, MERCHANTABILITY OR Company are registered trademarks of Microchip Technology FITNESS FOR PURPOSE. Microchip disclaims all liability Incorporated in the U.S.A. arising from this information and its use. Use of Microchip Silicon Storage Technology is a registered trademark of devices in life support and/or safety applications is entirely at Microchip Technology Inc. in other countries. the buyer’s risk, and the buyer agrees to defend, indemnify and Analog-for-the-Digital Age, Application Maestro, BodyCom, hold harmless Microchip from any and all damages, claims, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, suits, or expenses resulting from such use. No licenses are dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, conveyed, implicitly or otherwise, under any Microchip ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial intellectual property rights. Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2005-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 9781620769218 QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures == ISO/TS 16949 == are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.  2005-2013 Microchip Technology Inc. DS21946B-page 21

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