图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: T1035H-6G-TR
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

T1035H-6G-TR产品简介:

ICGOO电子元器件商城为您提供T1035H-6G-TR由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 T1035H-6G-TR价格参考¥3.02-¥3.02。STMicroelectronicsT1035H-6G-TR封装/规格:晶闸管 - TRIAC, TRIAC Alternistor - Snubberless 600V 10A Surface Mount D2PAK。您可以下载T1035H-6G-TR参考资料、Datasheet数据手册功能说明书,资料中有T1035H-6G-TR 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

TRIAC ALTERNISTOR 600V 10A D2PAK

产品分类

双向可控硅

品牌

STMicroelectronics

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

T1035H-6G-TR

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

Snubberless™

三端双向可控硅类型

可控硅 - 无缓冲器

产品培训模块

http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26297http://www.digikey.cn/PTM/IndividualPTM.page?site=cn&lang=zhs&ptm=26298

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

D2PAK

其它名称

497-8056-2
T1035H-6G-TR-ND
T1035H6GTR

其它有关文件

http://www.st.com/web/catalog/sense_power/FM144/CL1221/SC547/PF178960?referrer=70071840

包装

带卷 (TR)

安装类型

表面贴装

封装/外壳

TO-263-3,D²Pak(2 引线+接片),TO-263AB

标准包装

1,000

电压-断态

600V

电压-栅极触发(Vgt)(最大值)

1V

电流-不重复浪涌50、60Hz(Itsm)

100A,105A

电流-保持(Ih)(最大值)

35mA

电流-栅极触发(Igt)(最大值)

35mA

电流-通态(It(RMS))(最大值)

10A

配置

单一

推荐商品

型号:Q6016NH6RP

品牌:Littelfuse Inc.

产品名称:分立半导体产品

获取报价

型号:T1635T-8T

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:BTA12-800BWRG

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:BTA16-800BWRG

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:Z0103NA 5AL2

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:AVS08CBI

品牌:STMicroelectronics

产品名称:分立半导体产品

获取报价

型号:Q6015L552

品牌:Littelfuse Inc.

产品名称:分立半导体产品

获取报价

型号:Q4015L559

品牌:Littelfuse Inc.

产品名称:分立半导体产品

获取报价

样品试用

万种样品免费试用

去申请
T1035H-6G-TR 相关产品

Q4006DH4TP

品牌:Littelfuse Inc.

价格:

BT139-600,127

品牌:WeEn Semiconductors

价格:

BTA26-600BRG

品牌:STMicroelectronics

价格:

BTA12-800SWRG

品牌:STMicroelectronics

价格:

Q6025L6TP

品牌:Littelfuse Inc.

价格:¥14.95-¥14.95

Z0107MA,412

品牌:WeEn Semiconductors

价格:¥0.65-¥3.06

BTA312-800B,127

品牌:WeEn Semiconductors

价格:

Q6004D4RP

品牌:Littelfuse Inc.

价格:

PDF Datasheet 数据手册内容提取

T1035H, T1050H High temperature 10 A Snubberless™ Triacs Features A2 ■ Medium current Triac ■ 150 °C max. T turn-off commutation j G A2 ■ Low thermal resistance with clip bonding A1 ■ Very high 3 quadrant commutation capability A2 ■ Packages are RoHS (2002/95/EC) compliant ■ UL certified (ref. file E81734) G G A2 A2 A1 A1 Applications D2PAK TO-220AB T10xxH-6G T10xxH-6T Especially designed to operate in high power density or universal motor applications such as vacuum cleaner and washing machine drum motor, these 10 A Triacs provide a very high switching capability up to junction temperatures of 150 °C. G The heatsink can be reduced, compared to A2 traditional Triacs, according to the high A1 performance at given junction temperatures. TO-220AB Insulated T10xxH-6I Description T able 1. Device summary Available in through-hole or surface mount packages, the T1035H and T1050H Triacs series Symbol Value Unit are suitable for general purpose mains power ac I 10 A switching. T(RMS) V /V 600 V By using an internal ceramic pad, the T10xxH-6I DRM RRM provides voltage insulation (rated at 2500 V rms). I 35 or 50 mA GT TM: Snubberless is a trademark of STMicroelectronics September 2011 Doc ID 13565 Rev 2 1/10 www.st.com 10

Characteristics T1035H, T1050H 1 Characteristics Table 2. A bsolute maximum ratings Symbol Parameter Value Unit D2PAK, TO-220AB T = 135 °C c I On-state rms current (full sine wave) 10 A T(RMS) TO-220AB Ins T = 125 °C c Non repetitive surge peak on-state F = 50 Hz t = 20 ms 100 I A TSM current (full cycle, Tj initial = 25 °C) F = 60 Hz t = 16.7 ms 105 I²t I²t Value for fusing t = 10 ms 66 A²s p Critical rate of rise of on-state current I dI/dt G F = 120 Hz T = 150 °C 50 A/µs = 2 x I , t ≤ 100 ns j GT r Non repetitive surge peak off-state V /V V /V t = 10 ms T = 25 °C DRM RRM V DSM RSM voltage p j + 100 I Peak gate current t = 20 µs T = 150 °C 4 A GM p j P Average gate power dissipation T = 150 °C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg °C T Operating junction temperature range - 40 to + 150 j Table 3. E lectrical characteristics (T = 25 °C, unless otherwise specified) j Value Symbol Test Conditions Quadrant Unit T1035H T1050H I (1) I - II - III MAX. 35 50 mA GT V = 12 V, R = 33 Ω D L V I - II - III MAX. 1.0 V GT V V = V , R = 3.3 kΩ I - II - III MIN. 0.15 V GD D DRM L I (2) I = 500 mA MAX. 35 75 mA H T I - III 50 90 I I = 1.2 I MAX. mA L G GT II 80 110 dV/dt(2) V = 67% V gate open, T = 150 °C MIN. 1000 1500 V/µs D DRM, j (dI/dt)c(2) Without snubber, T = 150 °C MIN. 13 18 A/ms j 1. minimum IGT is guaranted at 20% of IGT max. 2. for both polarities of A2 referenced to A1. 2/10 Doc ID 13565 Rev 2

T1035H, T1050H Characteristics Table 4. S tatic characteristics Symbol Test Conditions Value Unit V (1) I = 14 A, t = 380 µs T = 25 °C MAX. 1.5 V T TM p j V (1) Threshold voltage T = 150 °C MAX. 0.80 V t0 j R (1) Dynamic resistance T = 150 °C MAX. 34 mΩ d j T = 25 °C MAX. 5 µA j V = V DRM RRM IDRM Tj = 150 °C MAX. 3.6 IRRM (2) VD/VR = 400 V (at peak mains voltage) Tj = 150 °C MAX. 3.0 mA V /V = 200 V (at peak mains voltage) T = 150 °C MAX. 2.5 D R j 1. for both polarities of A2 referenced to A1. 2. t = 380 µs p Table 5. T hermal resistance Symbol Parameter Value Unit D2PAK / TO-220AB 1.45 R Junction to case (AC) th(j-c) TO-220AB Ins 3.4 °C/W S = 1 cm2 D2PAK 45 R Junction to ambient th(j-a) TO-220AB / TO-220AB Ins 60 Doc ID 13565 Rev 2 3/10

Characteristics T1035H, T1050H F igure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case on-state rms current (full cycle) temperature (full cycle) P(W) IT(RMS)(A) 11 12 10 α=180° TO-220AB/D²PAK 9 10 TO-220AB 8 Insulated 8 7 6 6 5 4 4 3 2 180° 2 01 IT(RMS)(A) 0 α=180° TC(°C) 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 Figure 3. O n-state rms current versus Figure 4. Variation of thermal impedance ambient temperature versus pulse duration 4.5 IT(RMS)(A) 1.0E+02 Zth(°C/W) 4.0 Epocxoyp ppreirn ttehdic ckinrecsusit =b o3a5r µdm FR4, αD=²1P8A0K° Zth(j-a) SCU=1 cm² 3.5 3.0 1.0E+01 2.5 Zth(j-c) 2.0 1.5 1.0E+00 1.0 0.5 0.0 Tamb(°C) 1.0E-01 tP(s) 0 25 50 75 100 125 150 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 5. O n-state characteristics Figure 6. Surge peak on-state current versus (maximum values) number of cycles 100 ITM(A) 110ITSM(A) 100 90 Nonrepetitive t=20ms Tj=150°C 7800 Tjinitial=25°C One cycle 60 10 Tj=25°C 50 Repetitive 40 Tc=125°C 30 Tjmax.: 20 VRtd0== 304.8 m0ΩV 10 1 VTM(V) 0 Number of cycles 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000 4/10 Doc ID 13565 Rev 2

T1035H, T1050H Characteristics F igure 7. Non-repetitive surge peak on-state Figure 8. Relative variation of I ,I , I vs GT H L current for a sinusoidal pulse with junction temperature (typical values) 10000 ITSM(A),I²t(A²s) 2.5 IGT,IH,IL[Tj]/IGT,IH,IL[Tj=25°C] Tjinitial=25°C dI/dtlimitation:50 A/µs 2.0 IGT 1000 1.5 ITSM IH& IL 1.0 100 I²t 0.5 10 width tp< 10 ms and corresponding value of I 2t tP(ms) 0.0 Tj(°C) 0.01 0.10 1.00 10.00 -40 -20 0 20 40 60 80 100 120 140 160 Figure 9. Relative variation of critical rate of Figure 10. Relative variation of critical rate of decrease of main current (dI/dt)c decrease of main current versus versus reapplied (dV/dt)c junction temperature 2.0 (dI/dt)c[(dV/dt)c]/Specified(dI/dt)c 8(dI/dt)c[Tj]/(dI/dt)c[Tj=150°C] typical values 1.8 7 1.6 6 1.4 1.2 5 1.0 4 0.8 3 0.6 2 0.4 0.2 1 0.0 (dV/dt)C(V/µs) 0 Tj(°C) 0.1 1.0 10.0 100.0 25 50 75 100 125 150 Figure 11. Leakage current versus junction Figure 12. Variation of thermal resistance temperature for different values of junction to ambient versus copper blocking voltage (typical values) surface under tab 1.0E+04 IDRM/IRRM(µA) 80 Rth(j-a)(°C/W) Epoxy printed circuit board FR4, D²PAK 70 copper thickness = 35 µm 1.0E+03 VVDDRRMM==VVRRRRMM==660000VV 60 1.0E+02 VVDDRRMM==VVRRRRMM==440000VV 50 VVDDRRMM==VVRRRRMM==220000VV 40 1.0E+01 30 20 1.0E+00 10 1.0E-01 Tj(°C) 0 SCU(cm²) 50 75 100 125 150 0 5 10 15 20 25 30 35 40 Doc ID 13565 Rev 2 5/10

Ordering information scheme T1035H, T1050H 2 Ordering information scheme Figure 13. Ordering information scheme T 10 xx H - 6 y -TR Triac series Current 10 = 10 A Sensitivity 35 = 35 mA 50 = 50 mA High temperature Voltage 6 = 600V Package G = D2PAK T =TO-220AB I =TO-220AB Ins Packing Blank =Tube (D2PAK,TO-220AB) -TR =Tape and reel (D2PAK) 6/10 Doc ID 13565 Rev 2

T1035H, T1050H Package information 3 Package information ● Epoxy meets UL94, V0 ● Recommended torque 0.4 to 0.6 N·m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. T able 6. D2PAK dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.169 0.181 A A1 2.49 2.69 0.098 0.106 E C2 L2 A2 0.03 0.23 0.001 0.009 B 0.70 0.93 0.027 0.037 D B2 1.25 1.40 0.048 0.055 L C 0.45 0.60 0.017 0.024 L3 A1 C2 1.21 1.36 0.047 0.054 B2 C R B D 8.95 9.35 0.352 0.368 G E 10.00 10.28 0.393 0.405 G 4.88 5.28 0.192 0.208 A2 2mm min. FLAT ZONE L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 V2 L3 1.40 1.75 0.055 0.069 R 0.40 0.016 V2 0° 8° 0° 8° Figure 14. Footprint (dimensions in mm) 16.90 10.30 5.08 1.30 3.70 8.90 Doc ID 13565 Rev 2 7/10

Package information T1035H, T1050H T able 7. TO-220AB and TO-220AB Ins dimensions Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 15.20 15.90 0.598 0.625 a1 3.75 0.147 B C a2 13.00 14.00 0.511 0.551 Ø I b2 B 10.00 10.40 0.393 0.409 L F b1 0.61 0.88 0.024 0.034 A b2 1.23 1.32 0.048 0.051 I4 C 4.40 4.60 0.173 0.181 l3 c1 0.49 0.70 0.019 0.027 a1 c2 c2 2.40 2.72 0.094 0.107 l2 a2 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 M b1 c1 ØI 3.75 3.85 0.147 0.151 e I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 2.60 0.102 8/10 Doc ID 13565 Rev 2

T1035H, T1050H Ordering information 4 Ordering information T able 8. Ordering information Order code Marking Package Weight Base qty Delivery mode T10xxH-6G T10xxH 6G D2PAK 1.5 g 50 Tube T10xxH-6G-TR T10xxH 6G D2PAK 1.5 g 1000 Tape and reel T10xxH-6T T10xxH 6T TO-220AB 2.3 g 50 Tube T10xxH-6I T10xxH 6I TO-220AB Ins 2.3 g 50 Tube 5 Revision history T able 9. Document revision history Date Revision Changes 17-Apr-2007 1 First issue 20-Sep-2011 2 Updated: Features, Description and Figure2. Doc ID 13565 Rev 2 9/10

T1035H, T1050H Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 Doc ID 13565 Rev 2

Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: S TMicroelectronics: T1035H-6G T1050H-6G T1035H-6G-TR T1035H-6T T1035H-6I T1050H-6G-TR T1050H-6T T1050H-6I