SUM90N08-4m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET V (V) r (Ω) I (A) Q (Typ) (BR)DSS DS(on) D g (cid:129) 175 °C Junction Temperature 0.0048 at VGS = 10 V 90d RoHS 75 105 (cid:129) 100 % UIS Tested COMPLIANT 0.006 at VGS = 8 V 90d APPLICATIONS (cid:129) Power Supply - Half-Bridge - Secondary Synchronous Rectification (cid:129) Industrial TO-263 D G D S G Top View Ordering Information: SUM90N08-4m8P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25°C, unless otherwise noted C Parameter Symbol Limit Unit Drain-Source Voltage VDS 75 V Gate-Source Voltage VGS ± 20 TC = 25 °C 90d Continuous Drain Current (T = 175 °C) I J D TC = 70 °C 90d A Pulsed Drain Current IDM 240 Avalanche Current IAS 70 Single Pulse Avalanche Energya L = 0.1 mH EAS 245 mJ TC = 25 °C 300b Maximum Power Dissipationa T = 25 °Cc PD 3.75 W A Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount)c RthJA 40 °C/W Junction-to-Case (Drain) RthJC 0.5 Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74458 www.vishay.com S-71663-Rev. C, 06-Aug-07 1

SUM90N08-4m8P Vishay Siliconix SPECIFICATIONS T = 25°C, unless otherwise noted J Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 µA 75 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 250 nA VDS = 75 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = 75 V, VGS = 0 V, TJ = 150 °C 250 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 70 A VGS = 10 V, ID = 20 A 0.004 0.0048 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0096 Drain-Source On-State Resistancea rDS(on) Ω VGS = 8 V, ID = 20 A, TJ = 150 °C 0.0106 VGS = 8 V, ID = 20 A 0.0046 0.006 Forward Transconductancea gfs VDS = 15 V, ID = 20 A 58 S Dynamicb Input Capacitance Ciss 6460 Output Capacitance Coss VGS = 0 V, VDS = 40 V, f = 1 MHz 571 pF Reverse Transfer Capacitance Crss 275 Total Gate Chargec Qg 105 160 Gate-Source Chargec Qgs VDS = 30 V, VGS = 10 V, ID = 85 A 32 nC Gate-Drain Chargec Qgd 28 Gate Resistance Rg f = 1 MHz 1.3 2.6 Ω Turn-On Delay Timec td(on) 23 35 Rise Timec tr VDD = 30 V, RL = 0.4 Ω 17 26 ns Turn-Off Delay Timec td(off) ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω 34 52 Fall Timec tf 8 15 Source-Drain Diode Ratings and Characteristics (T = 25°C)b C Continuous Current IS 85 A Pulsed Current ISM 240 Forward Voltagea VSD IF = 30 A, VGS = 0 V 0.85 1.5 V Reverse Recovery Time trr 68 100 ns Peak Reverse Recovery Current IRM(REC) IF = 75 A, di/dt = 100 A/µs 2.6 4 A Reverse Recovery Charge Qrr 88 132 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74458 2 S-71663-Rev. C, 06-Aug-07

SUM90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 120 120 VGS = 10 thru 6 V 100 100 )A 80 )A 80 ( tn ( tn e e rru 60 rru 60 C C n n ia ia rD - 40 rD - 40 TC = 125°C ID 5 V ID 20 20 25°C - 55°C 0 0 0 1 2 3 4 5 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS- Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 0.015 T C = - 55 °C 120 25 °C ) 0.012 t - g) S ( e c n a c u d n o c s n a r T sf 369000 125 °C ( e c n a t s i s e R - n O - r ) n o ( S D 000...000000369 VVG G SS = = 8 1 V0 V 0 0.000 0 10 20 30 40 50 60 0 20 40 60 80 100 VG S - Gate-to-Source Voltage (V) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 0.020 8200 ID = 20 A Ciss 66556600 0.016 ) e( )F c p tsisna 0.012 ( ecna 4920 eR 125°C tic -n ap O -)no 0.008 aC - C 3280 (S D r 0.004 25°C 1640 Coss Crss 0.000 0 4.0 5.2 6.4 7.6 8.8 10.0 0 15 30 45 60 75 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) On-resistance vs. Gate-to-Source Voltage Capacitance Document Number: 74458 www.vishay.com S-71663-Rev. C, 06-Aug-07 3

SUM90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 10 2.0 ID = 85 A ID = 20 A )V( eg 8 VDS = 30 V e 1.7 10 V a c tloV ecruoS 6 VDS = 60 V natsiseR-n )dezilam 1.4 -ot-eta 4 O -)noroN( 1.1 G (S -SG 2 rD 0.8 V 0 0.5 0 23 46 69 92 115 - 50 - 25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) T J - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.7 150°C 0.2 10 )A ( tnerruC 1.0 )V( ecn - 0.3 ID = 5 mA eruc airaV - 0.8 oS -IS 0.1 25°C V)ht(SG - 1.3 ID = 250 µA 0.01 - 1.8 0.001 - 2.3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - 50 - 25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 100 100 ID = 1 mA 95 ) d e z i l a m r o n ( S S D 8950 I ) A ( V A D 10 150 °C 25 °C )R B V( 80 75 1 - 50 - 25 0 25 50 75 100 125 150 175 0.00001 0.0001 0.001 0.01 0.1 1.0 T J - Junction Temperature (°C) TA V (sec) Drain Source Breakdown vs. Junction Temperature Single Pulse Avalanche Current Capability vs. Time www.vishay.com Document Number: 74458 4 S-71663-Rev. C, 06-Aug-07

SUM90N08-4m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25°C, unless otherwise noted 180 1000 *Limited by rDS(on) 144 100 µs 100 ) A ( t n e r r u C n i a r D - 17028 Package Limited ) A ( t n e r r u C n i a r D - 10 11100 m0 m sm s s I D I D 1 dc 36 T C = 25 °C Single Pulse 0 0.1 0 25 50 75 100 125 150 0.1 1 10 100 T C - Case Temperature (°C) VD S - Drain-to-Source Voltage (V) *VG S minimum VG S at which rD S(on) is specified Maximum Drain Current vs. Case Temperature Safe Operating Area 1 Duty Cycle = 0.5 t f e v i c e f E d e m t n e i s z i l a n a r T p e c n a d e m m I l a r e h T 0.1 00..12 0.05 r o N 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74458. Document Number: 74458 www.vishay.com S-71663-Rev. C, 06-Aug-07 5

Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1