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  • 型号: STTH4R06DEE-TR
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STTH4R06DEE-TR产品简介:

ICGOO电子元器件商城为您提供STTH4R06DEE-TR由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STTH4R06DEE-TR价格参考¥2.91-¥5.93。STMicroelectronicsSTTH4R06DEE-TR封装/规格:二极管 - 整流器 - 单, 标准 表面贴装 二极管 600V 4A PowerFlat™(3.3x3.3)。您可以下载STTH4R06DEE-TR参考资料、Datasheet数据手册功能说明书,资料中有STTH4R06DEE-TR 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ULT FAST 600V 4A POWERFLAT二极管 - 通用,功率,开关 Turbo 2 Ultrafst REC 4A 600V 1.0V VF 30ns

产品分类

单二极管/整流器分离式半导体

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,二极管 - 通用,功率,开关,STMicroelectronics STTH4R06DEE-TR-

数据手册

点击此处下载产品Datasheet

产品型号

STTH4R06DEE-TR

不同If时的电压-正向(Vf)

1.7V @ 4A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

3µA @ 600V

二极管类型

标准

产品

General Purpose Diodes

产品种类

二极管 - 通用,功率,开关

供应商器件封装

PowerFlat™(3.3x3.3)

其它名称

497-13333-1

其它有关文件

http://www.st.com/web/catalog/sense_power/FM64/CL830/SC12/SS1651/PF253931?referrer=70071840

包装

剪切带 (CT)

反向恢复时间(trr)

50ns

商标

STMicroelectronics

安装类型

表面贴装

安装风格

SMD/SMT

封装

Reel

封装/外壳

8-PowerVDFN

封装/箱体

PowerFLAT 3.3 x 3.3

峰值反向电压

600 V

工作温度-结

150°C (最大)

工厂包装数量

3000

恢复时间

100 ns

最大反向漏泄电流

30 uA

最大浪涌电流

60 A

标准包装

1

正向连续电流

4 A

热阻

4.5°C/W Jc

电压-DC反向(Vr)(最大值)

600V

电流-平均整流(Io)

4A

系列

STTH4R06DEE

速度

快速恢复 =< 500 ns,> 200mA(Io)

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PDF Datasheet 数据手册内容提取

STTH4R06DEE Turbo 2 ultrafast recovery diode Datasheet  production data Features NC ■ Very low switching losses A ■ High frequency and high pulse current K operation A A ■ Low thermal resistance A NC ■ High junction temperature A A A A ■ ECOPACK®2 compliant component NC A Description K K The STTH4R06 series uses ST’s new 600 V planar Pt doping technology. The STTH4R06 is specially suited for switching mode base drive and PowerFLAT(3.3 x 3.3) transistor circuits. STTH4R06DEE-TR Packaged in PowerFLAT™, this device is intended for use in low profile applications. T able 1. Device summary Symbol Value I 4 A F(AV) V 600 V RRM T (max) 150 °C j V (typ) 1.0 V F T (typ) 30 ns RR TM: PowerFLAT is a trademark of STMicroelectronics September 2012 Doc ID 023262 Rev 1 1/8 This is information on a product in full production. www.st.com 8

Characteristics STTH4R06DEE 1 Characteristics T able 2. Absolute ratings (limiting values T = 25 °C unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 15 A F(RMS) I Average forward current Tc = 120 °C, = 0.5 4 A F(AV) I Surge non repetitive forward current tp = 10 ms sinusoidal 60 A FSM T Storage temperature range -65 to +150 °C stg Tj Maximum operating junction temperature 150 °C T able 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 4.5 °C/W th(j-c) Junction to ambient on printed circuit board (with recommended R 250 °C/W th(j-a) footprint, copper thickness = 35 µm) T able 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I (1) Reverse leakage Tj = 25 °C V = V - 3 µA R current T = 125 °C R RRM - 3 30 µA j T = 25 °C I = 4A 1.30 1.70 V (2) Forward voltage drop j F V F T = 150 °C - 1.0 1.25 j 1. Pulse test: t = 5 ms,  < 2% p 2. Pulse test: t = 380 µs,  < 2% p To evaluate the conduction losses use the following equation: P = 1 x I + 0.062 x I 2 F(AV) F (RMS) T able 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Reverse recovery IRM current T = 125 °C IF = 4 A, VR = 400 V, 5.5 7.5 A j dl /dt = -200 A/µs S Softness factor F 2 factor I = 1A, V = 30 V, F R 35 50 dl /dt = -50 A/µs F t Reverse recovery time T = 25 °C ns rr j I = 1A, V = 30 V, F R 30 40 dl /dt = -100 A/µs F t Forward recovery time T = 25 °C 100 ns fr j I = 4 A, V = 2 V F FR Forward recovery VFP voltage Tj = 25 °C dlF/dt = 100 A/µs 3.5 5 V 2/8 Doc ID 023262 Rev 1

STTH4R06DEE Characteristics Figure 1. A verage forward power dissipation Figure 2. Forward voltage drop versus versus average forward current forward current PF(AV)(W) IFM(A) 8 100.0 7 δ= 0.05 δ= 0.1 δ= 0.2 δ= 0.5 δ= 1 Tj=150°C 6 (Typical values) 10.0 5 Tj=150°C (Maximum values) Tj=25°C 4 (Maximum values) 3 T 1.0 2 1 IF(AV)(A) δ=tp/T tp VFM(V) 0 0.1 0 1 2 3 4 5 6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 3. R elative variation of thermal Figure 4. Peak reverse recovery current impedance junction to case versus versus dl /dt (typical values) F pulse duration Zth(j-c)/Rth(j-c) IRM(A) 1.0 12 IF=IF(AV) 0.9 VR=400V 10 Tj=125°C 0.8 0.7 8 0.6 0.5 6 0.4 4 0.3 Single pulse 0.2 2 0.1 tp(s) dIF/dt(A/µs) 0.0 0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 Figure 5. R everse recovery time versus dl /dt Figure 6. Reverse recovery charges versus F (typical values) dl /dt (typical values) F tRR(ns) QRR(nC) 240 320 200 TVIjR=F==14I2F05(A0V°)VC 280 VTIjR=F==14I2F05(A0V°V)C 240 160 200 120 160 120 80 80 40 40 dIF/dt(A/µs) 0 dIF/dt(A/µs) 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Doc ID 023262 Rev 1 3/8

Characteristics STTH4R06DEE Figure 7. R everse recovery softness factor Figure 8. Relative variation of dynamic versus dl /dt (typical values) parameters versus junction F temperature SFACTOR 1.20 4.0 3.5 VIRF==4IF0(A0VV) 1.00 Tj=125°C IRM 3.0 0.80 2.5 SFACTOR 0.60 2.0 QRR 1.5 0.40 1.0 0.5 dIF/dt(A/µs) 0.20 Tj(°C) RefereVnIRFc==e4I:F0T(A0jV=)V125°C 0.0 0.00 0 50 100 150 200 250 300 350 400 450 500 25 50 75 100 125 Figure 9. T ransient peak forward voltage Figure 10. Forward recovery time versus dl /dt F versus dl /dt (typical values) (typical values) F VFP(V) tfr(ns) 12 110 10 TIj=F=1I2F5(AV°)C 10900 TIVj=FF=1RI2=F5(2AVV°)C 80 8 70 60 6 50 40 4 30 2 20 dIF/dt(A/µs) 10 dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 250 300 350 400 450 500 Figure 11. J unction capacitance versus Figure 12. Thermal resistance junction to reverse voltage applied (typical ambient versus copper surface values) under tab C(pF) Rth(j-a)(°C/W) 100 250 F=1 MHz epoxy printed board FR4, copper thickness=35µm PowerFLAT (3.3x3.3) VOSC=30 mVRMS Tj=25°C 200 150 10 100 50 VR(V) SCu(cm²) 1 0 1 10 100 1000 0 1 2 3 4 5 6 7 8 9 10 4/8 Doc ID 023262 Rev 1

STTH4R06DEE Package information 2 Package information ● Epoxy meets UL94,V0 ● Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 13. PowerFLAT (3.3 x 3.3) dimensions (definitions) Exposed pad L E L1 E2 A3 E/2 b nc nc D/2 e/2 D2 D e a k k a A Index area (D/2 x E/2) 0.10 mm Ref. 0.10 mm Ref. Projection 0.20 mm Ref. T able 6. PowerFLAT (3.3 x 3.3) dimensions (values) Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 0.95 1.0 0.037 0.039 A3 0.2 0.008 b 0.29 0.34 0.39 0.011 0.013 0.015 D 3.20 3.30 3.40 0.126 0.130 0.134 D2 2.24 2.29 2.34 0.088 0.090 0.092 E 3.20 3.30 3.40 0.126 0.130 0.134 E2 1.66 1.71 1.76 0.065 0.067 0.069 e 0.65 0.026 L 0.40 0.016 L1 0.45 0.50 0.55 0.018 0.20 0.22 Doc ID 023262 Rev 1 5/8

Package information STTH4R06DEE Figure 14. Footprint (dimensions in mm) 2.39 1.195 2.21 3.4 0.59 0.6 0.65 0.325 0.44 6/8 Doc ID 023262 Rev 1

STTH4R06DEE Ordering information 3 Ordering information T able 7. Ordering information Order code Marking Package Weight Base qty Delivery mode PowerFLAT Tape and reel STTH4R06DEE-TR TH4R06 34 mg 3000 (3.3 x 3.3) 13” reel 4 Revision history T able 8. Document revision history Date Revision Changes 11-Sep-2012 1 First issue. Doc ID 023262 Rev 1 7/8

STTH4R06DEE Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY TWO AUTHORIZED ST REPRESENTATIVES, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2012 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 8/8 Doc ID 023262 Rev 1

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