图片仅供参考

详细数据请看参考数据手册

Datasheet下载
  • 型号: STTH2006W
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
  • 要求:
数量阶梯 香港交货 国内含税
+xxxx $xxxx ¥xxxx

查看当月历史价格

查看今年历史价格

STTH2006W产品简介:

ICGOO电子元器件商城为您提供STTH2006W由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 提供STTH2006W价格参考以及STMicroelectronicsSTTH2006W封装/规格参数等产品信息。 你可以下载STTH2006W参考资料、Datasheet数据手册功能说明书, 资料中有STTH2006W详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE ULTRA FAST 600V 20A DO247

产品分类

单二极管/整流器

品牌

STMicroelectronics

数据手册

点击此处下载产品Datasheet

产品图片

产品型号

STTH2006W

rohs

无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

-

不同If时的电压-正向(Vf)

1.75V @ 20A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

25µA @ 600V

二极管类型

标准

产品目录页面

点击此处下载产品Datasheet

供应商器件封装

DO247

其它名称

497-6082-5

包装

管件

反向恢复时间(trr)

70ns

安装类型

通孔

封装/外壳

DO-247-2(直引线)

工作温度-结

175°C (最大)

标准包装

30

热阻

1.1°C/W Jc

电压-DC反向(Vr)(最大值)

600V

电流-平均整流(Io)

20A

速度

快速恢复 =< 500 ns,> 200mA(Io)

STTH2006W 相关产品

74VHC4040M

品牌:ON Semiconductor

价格:

REC3-2409SRWZ/H4/C/SMD-R

品牌:Recom Power

价格:

CGA1A2X7R1E331M030BA

品牌:TDK Corporation

价格:

MBDHT2510

品牌:Panasonic Industrial Automation Sales

价格:

FFB20U60STM

品牌:ON Semiconductor

价格:

SMCJ6.5E3/TR13

品牌:Microsemi Corporation

价格:

83905AGILF

品牌:IDT, Integrated Device Technology Inc

价格:

A3949SLP

品牌:Allegro MicroSystems, LLC

价格:

PDF Datasheet 数据手册内容提取

STTH2006 Turbo 2 ultrafast high voltage rectifier Main product characteristics I 20 A F(AV) V 600 V RRM ) s T 175° C ( j t c VF (typ) 1.0 V u d t (max) 50 ns rr o A ) P r K s ( Features and benefits DO-247 t e c t STTH2006W u ■ Ultrafast switching e d l o o ■ Low reverse current s r P ■ Low thermal resistance b O e ■ Reduces switching and conduction losses t - e Description s ) ol t( Obrdser Codes c The STTH2006 uses ST Turbo 2u 600 V O technology and is especially sduited for use in Part Number Marking - switching power supplies, aond industrial applications, such as Prerctification and contsin)uous STTH2006W STTH2006W mode PFC boost d iode. t( e c t u T able 1. e Absolute Ratings (limiting values) d l o o Symbol Parameter Value Unit s r b P V Repetitive peak reverse voltage 600 V O RRM e IF(RMS) ReMtS forward voltage 50 A IF(AV)olAverage forward current Tc = 120° C δ = 0.5 20 A s I Surge non repetitive forward current t = 10 ms sinusoidal 160 A b FSM p O T Storage temperature range -65 to + 175 ° C stg T Maximum operating junction temperature 175 ° C j July 2006 Rev 1 1/7 www.st.com 7

Characteristics STTH2006 1 Characteristics T able 2. Thermal resistance Value Symbol Parameter Unit (max). R Junction to case 1.1 °C/W th(j-c) sTable 3. Static electrical characteristic Symbol Parameter Test conditions Min. Typ Max. Unit ) IR (1) Rcuervreernste leakage TTj == 2155°0 °C C VR = VRRM 80 82050 t( sµA j c u T = 25° C 1.75 V (2) Forward voltage drop j I = 20 A d V F T = 150° C F 1.o00 1.35 j r s ) P 1. Pulse test: t = 5 ms, δ < 2% ( p t 2. Pulse test: t = 380 µs, δ < 2% e c p t u e To evaluate the conduction losses use the following equation: d l P = 1.13 x I + 0.011 I 2 o o F(AV) F (RMS) s r P b T able 4. Dynamic characteristicsO e t Symbol Parameter - Test conditiones Min. Typ Max. Unit s ) I = 0.5 A o Il = 0.25 A I =1 A 50 Reverse recovery ( F s rr R trr time u ct Tj = 25° C OVIF = = b13 0A V dIF/dt = -50 A/µs 50 70 ns R d - IRM P Rcruervreeonrste recovery Tsj =) 1 25° C IdFI F=/d 3t 0= A-1 0 0 VAR/µ =s 400 V 8 11 A ( Forward recoveryt I = 30 A dI /dt = 100 A/µs et c T = 25 °C F F 500 ns t fr time u j VFR = 1.1 x VFmax e d l Forward recovery I = 30 A dI /dt = 100 A/µs o V o T = 25° C F F 2.5 V s FP vorltage j VFR = 1.1 x VFmax b P O e t e l o s b O 2/7

STTH2006 Characteristics Figure 1. C onduction losses versus Figure 2. Forward voltage drop versus average forward current forward current 35 P(W) 200 IFM(A) 30 δ=0.05 δ=0.1 δ=0.2 δ=0.5 δ=1 116800 TTjj==115500 °°CC ((MMaaxxiimmuumm vvaalluueess)) 25 140 120 20 TTjj==115500 °°CC 100 ((TTyyppiiccaallvvaalluueess)) 15 80 10 60 (MaxTimj=u2m5 °vCalues) T 40 5 0 IF(AV)(A) δ=tp/T tp 200 VFM(V) s ) ( 0 5 10 15 20 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2t.4 2.6 2.8 3.0 c u Figure 3. R elative variation of thermal Figure 4. Peak reverse recodvery current impedance junction to case versus dI /dt (toypical values) F ) versus pulse duration P r s ( t Zth(j-c)/Rth(j-c) IRM(A) e c 1.0 30 t u 00..89 25 VTjR==142050°oCVle o IdF=IF(AV) IF=2 x IF(AV) s IFr=0.5 x IF(AV) 0.7 2b0 P 0.6 O IF= 0.25 x IF(AV) e 0.5 15 t 0.4 - e 0.3 Single pulse s ) 10 ol 0.2 ( s t 5b 0.1 tp(s) u c O dIF/dt(A/µs) 0.0 0 1.E-03 1.E-02 d1.E-01 1.E+00 0 50 100 150 200 250 300 350 400 450 500 - o Figure 5. R everseP rrecovery time verssu)s Figure 6. Reverse recovery charges versus ( dI /d t (typical values) t dI /dt (typical values) Fe c F t u trr(ns) e Qrr(µC) d 200 l 3.0 o o VR=400V s r VTjR==142050°CV 2.5 Tj=125°C b P O 150 e IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) 2.0 IF=2 x IF(AV) t 100 e 1.5 IF=IF(AV) l o s 1.0 IF=0.5 x IF(AV) b50 O 0.5 dIF/dt(A/µs) dIF/dt(A/µs) 0 0.0 0 200 400 600 800 1000 0 200 400 600 800 1000 3/7

Characteristics STTH2006 Figure 7. S oftness factor versus dI /dt Figure 8. Relative variations of dynamic F (typical values) parameters versus junction temperature S factor 0.6 2.50 0.5 ITVFjR≤==214 2x05I0°FCV(AV) 22..0205 RefereVInFRc==eI4F:0(TA0Vj=V)125°C Sfactor 1.75 0.4 1.50 1.25 0.3 1.00 0.2 0.75 IRM 0.50 ) 0.1 0.25 QRR Tj(°C) s dIF/dt(A/µs) 0.00 ( t 0.0 25 50 75 10c0 125 0 50 100 150 200 250 300 350 400 450 500 u d Figure 9. T ransient peak forward voltage Figure 10. Forward recovoery time versus dI /dt )F versus dIF/dt (typical values) (typical vaPlures) s ( t VFP(V) tfr(ns) e c 8.0 800 t u 677...505 ITFj==I1F2(A5V°)C 700 ole o d VFR=T1IFj.=1=1 Ix2F(5VA°VFC)max. 6.0 600 s r 5.5 b P 5.0 500 4.5 O e 4.0 400 3.5 - e t 3.0 300 22..05 s ) 200 ol 1.5 ( s 01..50 dIF/dt(A/µs) u ct O 10b0 dIF/dt(A/µs) 0.0 0 0 100 200 3d00 400 500 0 100 200 300 400 500 - o F igure 11. JunctionP rcapacitance versuss) ( reve rse voltage appliedt e c t(typical values) u e d C(opFl) o 1000 s r F=1MHz b P VOSC=30mVRMS Tj=25°C O e t e l 100 o s b O VR(V) 10 1 10 100 1000 4/7

STTH2006 Package information 2 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.55 Nm ● Maximum torque value: 0.70 Nm T able 5. DO-247 Package dimensions Dimensions ) Ref. Millimeters Inchess ( t Min. Typ. Max. Min.c Typ. Max. u A 4.85 5.15 d0.191 0.203 o V D 2.20 r2.60 0.086 s )0.102 P ( E 0.40 0.80 0.015 t 0.031 e c V Dia. F 1.t00 1.40 0.0u39 0.055 e d l F2o 2.00 o 0.078 H A b sF3 2.00 P r2.40 0.078 0.094 O G e10.90 0.429 L5 t - e H 15.45 15.75 0.608 0.620 L s ) ol ( s L 19.85 20.15 0.781 0.793 tL2 L4 b c u F2 L1 O L1 3.70 4.30 0.145 0.169 d L2 18.50 0.728 L3 V2 o F3 -D P r s ) L3 14.20 14.80 0.559 0.582 F ( e G ct M E L4 34.60 1.362 e t u L5 5.50 0.216 d l o o M 2.00 3.00 0.078 0.118 s r b P V 5° 5° O e V2 60° 60° t e l Dia. 3.55 3.65 0.139 0.143 o s In order to meet environmental requirements, ST offers these devices in ECOPACK® b packages. These packages have a lead-free second level interconnect. The category of O second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7

Ordering information STTH2006 3 Ordering information Ordering type Marking Package Weight Base qty Delivery mode STTH2006W STTH2006W DO-247 4.40 g 30 Tube 4 Revision history ) s ( Date Revision Changes t c u 13-Jul-2006 1 Initial release. d o ) r s P ( t e c t u e d l o o s r P b O e t - e s ) ol ( s t b c u O d - o r ) P s ( t e c t u e d l o o s r b P O e t e l o s b O 6/7

STTH2006 ) s Please Read Carefully: ( t c u Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subdsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and soervices described herein at any ) time, without notice. r s P ( All ST products are sold pursuant to ST’s terms and conditions of sale. t e c Purchasers are solely responsible for the choice, selection and use of the ST products andt services described hereiun, and ST assumes no e liability whatsoever relating to the choice, selection or use of the ST products and services described herein. d l o o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this s r document refers to any third party products or services it shall not be deemed a license grant by ST foPr the use of such third party products b or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such O third party products or services or any intellectual property contained therein. e t - e UNLESS OTHERWISE SET FORTH IN ST’S TERMSs )AND CONDITIONS OF oSlALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AN(D/OR SALE OF ST PRsODUCTS INCLUDING WITHOUT LIMITATION IMPLIED t b WARRANTIES OF MERCHANTABILITY, FITNcESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMuENT OF ANY PATENT, COOPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. d UNLESS EXPRESSLY APPROVED IN WRITING BY AN- AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT o RECOMMENDED, AUTHORIZrED OR WARRANTED FOR) USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PPRODUCTS OR SYSTEMS sWHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, ( DEATH, OR SEVERE P ROPERTY OR ENVIRONtMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLYe BE USED IN AUTOMOTIcVE APPLICATIONS AT USER’S OWN RISK. t u e d l o o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void s r anby warranty granted by ST fPor the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. O e t e ST and the ST logo are trademarks or registered trademarks of ST in various countries. l o s Information in this document supersedes and replaces all information previously supplied. b O The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 7/7