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  • 型号: STPS20120D
  • 制造商: STMicroelectronics
  • 库位|库存: xxxx|xxxx
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STPS20120D产品简介:

ICGOO电子元器件商城为您提供STPS20120D由STMicroelectronics设计生产,在icgoo商城现货销售,并且可以通过原厂、代理商等渠道进行代购。 STPS20120D价格参考。STMicroelectronicsSTPS20120D封装/规格:二极管 - 整流器 - 单, 肖特基 通孔 二极管 120V 20A TO-220AC。您可以下载STPS20120D参考资料、Datasheet数据手册功能说明书,资料中有STPS20120D 详细功能的应用电路图电压和使用方法及教程。

产品参数 图文手册 常见问题
参数 数值
产品目录

分立半导体产品

描述

DIODE SCHOTTKY 120V 20A TO220AB肖特基二极管与整流器 POWER S RECTIFIER

产品分类

单二极管/整流器分离式半导体

品牌

STMicroelectronics

产品手册

点击此处下载产品Datasheet

产品图片

rohs

符合RoHS无铅 / 符合限制有害物质指令(RoHS)规范要求

产品系列

二极管与整流器,肖特基二极管与整流器,STMicroelectronics STPS20120D-

数据手册

点击此处下载产品Datasheet

产品型号

STPS20120D

不同If时的电压-正向(Vf)

930mV @ 20A

不同 Vr、F时的电容

-

不同 Vr时的电流-反向漏电流

20µA @ 120V

二极管类型

肖特基

产品

Schottky Rectifiers

产品目录页面

点击此处下载产品Datasheet

产品种类

肖特基二极管与整流器

供应商器件封装

TO-220AB

其它名称

497-4627-5

其它有关文件

http://www.st.com/web/catalog/sense_power/FM64/CL1571/SC541/SS1619/PF92744?referrer=70071840

包装

管件

反向恢复时间(trr)

-

商标

STMicroelectronics

安装类型

通孔

安装风格

Through Hole

封装

Tube

封装/外壳

TO-220-3

封装/箱体

TO-220-3

峰值反向电压

120 V

工作温度-结

175°C (最大)

工作温度范围

+ 175 C

工厂包装数量

50

技术

Silicon

最大反向漏泄电流

20 uA

最大工作温度

+ 175 C

最大浪涌电流

200 A

最小工作温度

- 65 C

标准包装

50

正向电压下降

0.93 V

正向连续电流

20 A

热阻

2.2°C/W Jc

电压-DC反向(Vr)(最大值)

120V

电流-平均整流(Io)

20A

系列

STPS20120D

速度

快速恢复 =< 500 ns,> 200mA(Io)

配置

Single

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PDF Datasheet 数据手册内容提取

STPS20120D Datasheet 120 V power Schottky rectifier Features A K • High junction temperature capability • Avalanche rated K • Low leakage current • Good trade-off between leakage current and forward voltage drop • ECOPACK®2 compliant A Applications K TO-220AC • Switching diode • SMPS • DC/DC converter • LED lighting • Notebook adapter Description This single Schottky rectifier is suited for high frequency switch mode power supply. Packaged in TO-220AC, the STPS20120D is optimized for use in notebook & LCD adaptors, desktop SMPS, providing in these applications a margin between the remaining voltages applied on the diode and the voltage capability of the diode. Product status link STPS20120D Product summary Symbol Value IF(AV) 20 A VRRM 120 V Tj (max.) 175 °C VF (typ.) 0.72 V DS4232 - Rev 2 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.

STPS20120D Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 120 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current , δ = 0.5 square wave Tc = 130 °C 20 A IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 200 A PARM Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C 619 W Tstg Storage temperature range -65 to +175 °C Tj Maximum operating junction temperature (1) 175 °C 1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 2. Thermal resistance parameters Symbol Parameter Value Unit Rth(j-c) Junction to case 2.2 °C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 °C - 20 µA IR(1) Reverse leakage current VR = VRRM Tj = 125 °C - 3 10 mA Tj = 25 °C - 0.70 IF = 5 A Tj = 125 °C - 0.54 0.58 Tj = 25 °C - 0.80 VF(2) Forward voltage drop IF = 10 A V Tj = 125 °C - 0.62 0.66 Tj = 25 °C - 0.93 IF = 20 A Tj = 125 °C - 0.72 0.76 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses, use the following equation: P = 0.56 x I + 0.010 x I 2 F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS4232 - Rev 2 page 2/9

STPS20120D Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Average forward power dissipation versus Figure 2. Average forward current versus ambient average forward current temperature (δ = 0.5) 28 PF(AV)(W) 22 IF(AV)(A) 26 δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 20 Rth(j-a) = Rth(j-c) 24 22 δ = 1 18 20 16 18 14 16 14 12 Rth(j-a) = 15°C/W 12 10 10 8 8 6 6 T T 4 4 02 IF(AV)(A) δ=tp/T tp 02 δ=tp/T tp Tamb(°C) 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 25 50 75 100 125 150 175 Figure 4. Relative variation of thermal impedance junction Figure 3. Normalized avalanche power derating versus to case versus pulse duration pulse duration (T = 125 °C) j PPAR(1M0(t pµ)s) 1.0 Zth(j-c)/Rth(j-c) 1 ARM 0.9 0.8 0.7 0.1 0.6 0.5 0.4 0.01 0.3 0.2 0.1 Single pulse tP(s) tp(µs) 0.0 0.001 1.E-03 1.E-02 1.E-01 1.E+00 1 10 100 1000 DS4232 - Rev 2 page 3/9

STPS20120D Characteristics (curves) Figure 5. Reverse leakage current versus reverse voltage Figure 6. Junction capacitance versus reverse voltage applied (typical values) applied (typical values) IR(mA) C(pF) 1.E+02 1000 F = 1 MHz 1.E+01 Tj= 150 °C VOSTC j== 3205 m°CVRMS 1.E+00 Tj= 125 °C 1.E-01 Tj= 100 °C Tj= 75 °C 100 1.E-02 Tj= 50 °C 1.E-03 Tj= 25 °C 1.E-04 VR(V) VR(V) 1.E-05 10 0 10 20 30 40 50 60 70 80 90 100 110 120 1 10 100 Figure 7. Forward voltage drop versus forward current I (A) F 100 (MaTxijm= u1m25 v °aClues) (TyTpji=c a1l2v5a l°uCes) (MaxTimj=u 2m5 v°aClues) 10 VF(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 DS4232 - Rev 2 page 4/9

STPS20120D Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 2.1 TO-220AC package information • Epoxy meets UL 94,V0 • Cooling method: by conduction (C) • Recommended torque value: 0.55 N·m • Maximum torque value: 0.70 N·m Figure 8. TO-220AC package outline H2 A C Ø I Gate note (1)(2) L5 L7 L6 L2 D F1 L9 L4 Gate note (1)(2) F M E G (1) :M ax resin gate protusion 0.5 mm (2) :R esin gate position is accepted in each of the two positions shown on the drawings or their symmetrical DS4232 - Rev 2 page 5/9

STPS20120D TO-220AC package information Table 4. TO-220AC package mechanical data Dimensions Ref. Millimeters Inches (for reference only) Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 H2 10.00 10.40 0.393 0.409 L2 16.40 typ. 0.645 typ. L4 13.00 14.00 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.60 typ. 0.102 typ. Diam 3.75 3.85 0.147 0.151 DS4232 - Rev 2 page 6/9

STPS20120D Ordering information 3 Ordering information Table 5. Ordering information Order code Marking Package Weight Base qty. Delivery mode STPS20120D STPS20120D TO-220AC 1.86 g 50 Tube DS4232 - Rev 2 page 7/9

STPS20120D Revision history Table 6. Document revision history Date Version Changes 18-Feb-2005 1 First issue. Removed figure 4 and figure 5. Updated Figure 3. Normalized avalanche power derating versus pulse 02-Jul-2018 2 duration (Tj = 125 °C) and Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified). Minor text changes to improve readability. DS4232 - Rev 2 page 8/9

STPS20120D IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS4232 - Rev 2 page 9/9

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